专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07846819B2 Method of synthesizing nanoscale filamentary structures, and electronic components comprising such structures 有权
标题翻译：合成纳米级丝状结构的方法以及包含这种结构的电子部件
公开(公告)号：US07846819B2
公开(公告)日：2010-12-07
申请号：US10574186
申请日：2004-10-12
申请人： Didier Pribat , Jean-Eric Wegrowe , Travis Wade
发明人： Didier Pribat , Jean-Eric Wegrowe , Travis Wade
IPC分类号： H01L21/365 , H01L29/04
CPC分类号： H01L51/0048 , B01J21/04 , B01J21/185 , B01J23/63 , B01J23/83 , B01J35/065 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C30B25/18 , C30B29/60 , D01F9/08 , D01F9/12 , H01L21/0242 , H01L21/02527 , H01L21/02532 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02642 , H01L21/02645 , Y10S977/742 , Y10S977/762 , Y10S977/843
摘要： A method of synthesizing electronic components incorporating nanoscale filamentary structures in which method a metallic catalyst is deposited in a nanoporous membrane , the catalyst being adapted to penetrate in at least some of the pores of the nanoporous membrane , and filamentary structures are grown on the catalyst in at least some of the pores in the nanoporous membrane . The nanoporous membrane is prepared in a manner suitable for ensuring that the wall of the pores include a single-crystal zone, and at least part of the catalyst is grown epitaxially on said single-crystal zone.
摘要翻译：一种合成纳米尺度丝状结构的电子部件的方法，其中金属催化剂沉积在纳米多孔膜中的方法，所述催化剂适于在纳米多孔膜的至少一些孔中渗透，并且在催化剂上生长丝状结构纳米多孔膜中的至少一些孔。以适于确保孔的壁包括单晶区的方式制备纳米多孔膜，并且至少部分催化剂在所述单晶区上外延生长。

2. 发明申请

US20050235906A1 Method for catalytic growth of nanotubes or nanofibers comprising a nisi alloy diffusion barrier 有权
标题翻译：包含nisi合金扩散阻挡层的纳米管或纳米纤维的催化生长方法
公开(公告)号：US20050235906A1
公开(公告)日：2005-10-27
申请号：US10497079
申请日：2002-12-03
申请人： Pierre Legagneux , Didier Pribat , Yannig Nedellec , Pierre Legasneux , Didier Pribat , Yannig Nedellec
发明人： Pierre Legagneux , Didier Pribat , Yannig Nedellec , Pierre Legasneux , Didier Pribat , Yannig Nedellec
IPC分类号： C01B31/02 , C30B11/00 , C30B11/12 , D01F9/127 , C30B23/00 , C30B25/00 , C30B28/12 , C30B29/58
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/162 , C30B11/00 , C30B11/12 , C30B29/36 , C30B29/52 , C30B29/605 , D01F9/127
摘要： The invention relates to a process for the growth of nanotubes or nanofibers on a substrate comprising at least an upper layer made of a first material, wherein: the formation, on the surface of the upper layer, of a barrier layer made of an alloy of the first material and of a second material, said alloy being stable at a first temperature; the formation of spots of catalyst that are made of the second material, on the surface of the alloy layer; and the growth of nanotubes or nanofibers at a second temperature below said first temperature. The alloy layer allows effective growth of nanotubes/nanofibers from catalyst spots on the surface of said alloy layer. This is because the alloy layer constitutes a diffusion barrier preventing the catalyst from diffusing into the growth substrate, which barrier is stable at the catalytic nanotube/nanofiber growth temperature.
摘要翻译：本发明涉及一种用于在基材上生长纳米管或纳米纤维的方法，该方法至少包括由第一材料制成的上层，其中：在上层的表面上形成由合金形成的阻挡层所述第一材料和第二材料，所述合金在第一温度下是稳定的; 在合金层的表面上形成由第二材料制成的催化剂斑点; 以及在低于所述第一温度的第二温度下纳米管或纳米纤维的生长。合金层允许纳米管/纳米纤维从所述合金层表面上的催化剂点有效生长。这是因为合金层构成阻止催化剂扩散到生长衬底中的扩散阻挡层，该阻挡层在催化纳米管/纳米纤维生长温度下是稳定的。

3. 发明授权

US08138046B2 Process for fabricating a nanowire-based vertical transistor structure 失效
标题翻译：用于制造基于纳米线的垂直晶体管结构的工艺
公开(公告)号：US08138046B2
公开(公告)日：2012-03-20
申请号：US12278173
申请日：2007-02-05
申请人： Didier Pribat , Costel-Sorin Cojocaru
发明人： Didier Pribat , Costel-Sorin Cojocaru
IPC分类号： H01L21/336
CPC分类号： H01L51/0512 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/7827 , H01L29/78642 , H01L51/0048
摘要： The invention relates to a process for fabricating a vertical transistor structure. On a substrate (10), is a first conductive layer (11), providing the source or drain electrode function, and an upper conductive layer (17), providing the drain or source electrode function. The production of a membrane includes a stack of porous layers including a first insulating layer (20), a second conductive layer (12), providing the gate electrode function, and an upper insulating layer (13′) on the surface of the substrate covered with the first conductive layer (11) providing the drain or source electrode function. The porous layers having substantially stacked pores. The production of filaments made of a semiconductor material is inside some of the stacked pores of the porous layers. The production of the upper conductive layer provides the source or drain electrode function on the surface of the stack of porous layers filled with filaments made of semiconductor material.
摘要翻译：本发明涉及制造垂直晶体管结构的方法。在基板（10）上，提供源极或漏极功能的第一导电层（11）和提供漏极或源极功能的上导电层（17）。膜的制造包括一堆多孔层，包括提供栅电极功能的第一绝缘层（20），第二导电层（12）和覆盖在衬底的表面上的上绝缘层（13'）其中第一导电层（11）提供漏极或源极电极功能。多孔层具有基本上层叠的孔。由半导体材料制成的细丝的制造在多孔层的一些堆叠的孔内。上导电层的制造在填充有由半导体材料制成的细丝的多孔层的堆叠的表面上提供源极或漏极功能。

4. 发明授权

US07491269B2 Method for catalytic growth of nanotubes or nanofibers comprising a NiSi alloy diffusion barrier 有权
标题翻译：包含NiSi合金扩散阻挡层的纳米管或纳米纤维的催化生长方法
公开(公告)号：US07491269B2
公开(公告)日：2009-02-17
申请号：US10497079
申请日：2002-12-03
申请人： Pierre Legagneux , Didier Pribat , Yannig Nedellec
发明人： Pierre Legagneux , Didier Pribat , Yannig Nedellec
IPC分类号： C30B29/62
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/162 , C30B11/00 , C30B11/12 , C30B29/36 , C30B29/52 , C30B29/605 , D01F9/127
摘要： The invention relates to a process for the growth of nanotubes or nanofibers on a substrate comprising at least an upper layer made of a first material, wherein: the formation, on the surface of the upper layer, of a barrier layer made of an alloy of the first material and of a second material, said alloy being stable at a first temperature; the formation of spots of catalyst that are made of the second material, on the surface of the alloy layer; and the growth of nanotubes or nanofibers at a second temperature below said first temperature. The alloy layer allows effective growth of nanotubes/nanofibers from catalyst spots on the surface of said alloy layer. This is because the alloy layer constitutes a diffusion barrier preventing the catalyst from diffusing into the growth substrate, which barrier is stable at the catalytic nanotube/nanofiber growth temperature.
摘要翻译：本发明涉及一种用于在基材上生长纳米管或纳米纤维的方法，该方法至少包括由第一材料制成的上层，其中：在上层的表面上形成由合金形成的阻挡层所述第一材料和第二材料，所述合金在第一温度下是稳定的; 在合金层的表面上形成由第二材料制成的催化剂斑点; 以及在低于所述第一温度的第二温度下纳米管或纳米纤维的生长。合金层允许纳米管/纳米纤维从所述合金层表面上的催化剂点有效生长。这是因为合金层构成阻止催化剂扩散到生长衬底中的扩散阻挡层，该阻挡层在催化纳米管/纳米纤维生长温度下是稳定的。

5. 发明授权

US5087275A Electrochemical sensor having microcavities 失效
标题翻译：具有微观结构的电化学传感器
公开(公告)号：US5087275A
公开(公告)日：1992-02-11
申请号：US544887
申请日：1990-06-28
申请人： Didier Pribat , Joel Perret , Jean-Claude Rouffy , Gonzalo Velasco
发明人： Didier Pribat , Joel Perret , Jean-Claude Rouffy , Gonzalo Velasco
IPC分类号： G01N27/419 , G01N27/26 , G01N27/407 , G01N27/409 , G01N27/41 , G01N27/416 , G01N30/60 , H01L49/02
CPC分类号： G01N27/4071 , G01N30/6095 , G01N30/6078
摘要： A method for making a microcavity in an enamel layer is disclosed. For this purpose, a layer of a carbon-based material with the dimensions of the microcavity to be obtained is provided. This layer is coated with an enamel except in a limited zone. The unit is heated to high temperature so as to cause combustion of the carbon-based material. The combustion gases escape through the reduced zone.

6. 发明授权

US09206509B2 Method for the controlled growth of a graphene film 有权
标题翻译：石墨烯薄膜受控生长的方法
公开(公告)号：US09206509B2
公开(公告)日：2015-12-08
申请号：US13124413
申请日：2009-10-16
申请人： Laurent Baraton , Costel Sorin Cojocaru , Didier Pribat
发明人： Laurent Baraton , Costel Sorin Cojocaru , Didier Pribat
IPC分类号： B05D5/12 , B05D3/10 , B05D3/06 , B05D3/02 , C23C14/48 , C23C14/58 , B32B38/10 , C23C16/26 , C23C16/02 , C23C16/56 , C30B25/02 , C30B29/02
CPC分类号： C23C16/26 , C23C16/0281 , C23C16/56 , C30B25/02 , C30B29/02
摘要： The invention includes a controlled graphene film growth process including the production on the surface of a substrate of a layer of a metal having with carbon a phase diagram such that, above a molar concentration threshold ratio CM/CM+CC, where CM is the molar metal concentration in a metal/carbon mixture and CC is the molar carbon concentration in the mixture, a homogeneous solid solution is obtained. The metal layer is exposed to a controlled flux of carbon atoms or carbon-containing radicals or carbon-containing ions at a temperature such that the molar concentration ratio obtained is greater than the threshold ratio to obtain a solid solution of carbon in the metal. The process further includes an operation for modifying the phase of the mixture into two phases, a metal phase and a graphite phase, leading to the formation of at least a lower graphene film at the metal layer incorporating carbon atoms-substrate interface and an upper graphene film at the surface of the metal layer.
摘要翻译：本发明包括受控的石墨烯薄膜生长工艺，其包括在具有碳的金属层的基底的表面上生产相图，使得高于摩尔浓度阈值比CM / CM + CC，其中CM是摩尔金属/碳混合物中的金属浓度，CC是混合物中的摩尔碳浓度，得到均匀的固溶体。在使得所得到的摩尔浓度比大于阈值比以获得金属中的固溶体的温度的温度下，将金属层暴露于受控的碳原子或含碳自由基或含碳离子的流量。该方法还包括将混合物相变成两相的操作，金属相和石墨相，导致在包含碳原子 - 基底界面的金属层和上部石墨烯上形成至少一个下部石墨烯膜膜在金属层的表面。

7. 发明申请

US20110198313A1 METHOD FOR THE CONTROLLED GROWTH OF A GRAPHENE FILM 有权
标题翻译：石墨膜的控制生长方法
公开(公告)号：US20110198313A1
公开(公告)日：2011-08-18
申请号：US13124413
申请日：2009-10-16
申请人： Laurent Baraton , Costel-Sorin Cojocaru , Didier Pribat
发明人： Laurent Baraton , Costel-Sorin Cojocaru , Didier Pribat
IPC分类号： B05D5/12 , B05D3/10 , B05D3/06 , B05D3/02 , C23C14/48 , C23C14/58 , B32B37/14 , B32B38/10
CPC分类号： C23C16/26 , C23C16/0281 , C23C16/56 , C30B25/02 , C30B29/02
摘要： The invention relates to a controlled graphene film growth process characterized in that it comprises the following steps: the production on the surface of a substrate (S1) of a layer of a metal having with carbon a phase diagram such that above a molar concentration threshold ratio CM/CM+CC, where CM is the molar metal concentration in a metal/carbon mixture and CC is the molar carbon concentration in said mixture, a homogeneous solid solution is obtained; the exposure of the metal layer to a controlled flux of carbon atoms or carbon-containing radicals or carbon-containing ions at a temperature such that the molar concentration ratio obtained is greater than the threshold ratio so as to obtain a solid solution of carbon in the metal; and an operation for modifying the phase of the mixture into two phases, a metal phase and a graphite phase respectively, leading to the formation of at least a lower graphene film (31) located at the (metal layer incorporating carbon atoms)/substrate interface and an upper graphene film (30) at the surface of the metal layer.
摘要翻译：本发明涉及一种受控石墨烯薄膜生长方法，其特征在于其包括以下步骤：在具有碳的金属层的基底（S1）的表面上生产相图，使得高于摩尔浓度阈值比 CM / CM + CC，其中CM是金属/碳混合物中的摩尔金属浓度，CC是所述混合物中的摩尔碳浓度，获得均匀的固溶体; 在使所获得的摩尔浓度比大于阈值比的温度下将金属层暴露于受控的碳原子或含碳基团或含碳离子的流量，从而获得碳的固溶体金属; 以及分别将金属相和石墨相改变为两相的相的操作，导致至少形成位于（含有碳原子的金属层）/基板界面的至少一个下部石墨烯膜（31）和在金属层表面的上部石墨烯膜（30）。

8. 发明申请

US20060280945A1 Method of synthesising a crystalline material and material thus obtained 审中-公开
标题翻译：合成由此获得的结晶材料和材料的方法
公开(公告)号：US20060280945A1
公开(公告)日：2006-12-14
申请号：US10561761
申请日：2004-06-25
申请人： Didier Pribat
发明人： Didier Pribat
IPC分类号： B32B9/00 , H01L21/20 , H01L21/36
CPC分类号： B82Y30/00 , C30B1/02 , C30B25/02 , C30B29/06 , C30B29/605 , Y10T428/30
摘要： The invention provides a method of synthesizing a crystalline material in which seeds (6) are produced of a catalyst that is adapted to dissolve carbon on a substrate (2) of a first material; carbon nanotubes (6) are grown from the seeds (6); and a layer is produced of a second material comprising at least one monocrystalline region (12) orientated from a seed (6). The invention also provides the material obtained by said method. Application to the synthesis of polycrystalline silicon on a glass substrate.
摘要翻译：本发明提供一种合成结晶材料的方法，其中种子（6）由适于将碳溶解在第一材料的基材（2）上的催化剂制成; 从种子（6）生长碳纳米管（6）; 并且由第二材料制成包含至少一个从种子（6）取向的单晶区域（12）的层。本发明还提供了通过所述方法获得的材料。适用于在玻璃基板上合成多晶硅。

9. 发明授权

US5294564A Method for the directed modulation of the composition or doping of semiconductors, notably for the making of planar type monolithic electronic components, use of the method and corresponding products 失效
标题翻译：用于定向调制半导体的组成或掺杂的方法，特别是用于制造平面型单片电子元件的方法及其相应产品的使用
公开(公告)号：US5294564A
公开(公告)日：1994-03-15
申请号：US28607
申请日：1993-03-08
申请人： Leonidas Karapiperis , Didier Pribat
发明人： Leonidas Karapiperis , Didier Pribat
IPC分类号： H01L33/00 , H01L21/20 , H01L21/205 , H01L21/329 , H01L29/205 , H01L29/47 , H01L29/872 , H01L29/93 , H01L47/02 , H01S5/00 , H01S5/026 , H01S5/20 , H01S5/22 , H01S5/30 , H01S5/40
CPC分类号： H01L29/66219 , H01L21/02381 , H01L21/02395 , H01L21/0245 , H01L21/02463 , H01L21/02546 , H01L21/02639 , H01L29/205 , H01S5/20 , H01S5/2203 , H01S5/2081 , H01S5/3072 , H01S5/3086 , Y10S148/026 , Y10S148/041
摘要： The invention pertains to the field of fabrication, by vapor phase deposition, of the thin layers of monocrystalline, polycrystalline or amorphous material on a substrate having an identical or different nature. The aim is to provide a method, enabling this structure to be made, that includes a modulation of both the composition and the doping, in a direction that is not perpendicular to the surface of the substrate, notably in a lateral way to obtain a planar technology. According to the invention, this thin layer is made by conformal epitaxy, using a crystalline seed in gas phase, between two confinement layers made of a distinct material in such a way that there can be neither nucleation nor deposition of semiconductive material on the surfaces of said confinement layers and wherein the variation of the gaseous mixture of said gas phase is controlled to obtain said modulation of the composition and/or of the doping of said thin film.
摘要翻译：本发明涉及通过气相沉积在具有相同或不同性质的基底上的单晶，多晶或非晶材料薄层的制造领域。目的是提供一种方法，使得能够在不垂直于衬底的表面的方向上形成包括组成和掺杂两者的调制的方法，特别是以横向方式获得平面技术。根据本发明，该薄层是通过保形外延法制成的，使用气相中的晶体种子，在由不同材料制成的两个约束层之间，使得半导体材料既不会成核也不能沉积在所述限制层并且其中控制所述气相的气体混合物的变化以获得所述薄膜的组成和/或掺杂的所述调制。

10. 发明授权

US5053833A Device made of oxide superconductive material covered with ion conductive means for adjusting the doping level and T.sub.c thereof 失效
标题翻译：氧化物超导材料的装置，其具有用于调节掺杂水平的离子传导装置和TC
公开(公告)号：US5053833A
公开(公告)日：1991-10-01
申请号：US657364
申请日：1991-02-19
申请人： Didier Pribat , Dominique Dieumegard , Guy Garry , Louis Mercandalli
发明人： Didier Pribat , Dominique Dieumegard , Guy Garry , Louis Mercandalli
IPC分类号： H01L39/12 , H01L39/24
CPC分类号： H01L39/2419 , H01L39/126 , H01L39/2454 , H01L39/2464 , Y10S505/816 , Y10T29/49982
摘要： Disclosed is a device made of superconductive material wherein the superconducting layer is enclosed by at least one material which is a conductor of ions of one of the anionic constituent elements of the superconductive layer. This makes it possible to adjust the stoichiometry of the superconductive layer. The disclosure also concerns a method for adjusting the content of the constituent elements of the superconductive layer by electrolysis.
摘要翻译：公开了一种由超导材料制成的器件，其中超导层由至少一种材料包围，该材料是超导层的阴离子构成元件之一的离子的导体。这使得可以调节超导层的化学计量。本公开还涉及通过电解调节超导层的构成元素的含量的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式