专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09209009B2 Chunk polycrystalline silicon and process for cleaning polycrystalline silicon chunks 有权
标题翻译：块多晶硅和多晶硅块清洗工艺
公开(公告)号：US09209009B2
公开(公告)日：2015-12-08
申请号：US13772756
申请日：2013-02-21
申请人： Gerhard Traunspurger , Laszlo Fabry , Reiner Pech
发明人： Gerhard Traunspurger , Laszlo Fabry , Reiner Pech
IPC分类号： C01B33/02 , H01L21/02 , C01B33/037 , C30B11/00 , C30B13/00 , C30B15/00 , C30B29/06
CPC分类号： C01B33/02 , C01B33/037 , C01P2002/88 , C01P2002/89 , C01P2002/90 , C01P2006/80 , C30B11/00 , C30B13/00 , C30B15/00 , C30B29/06 , H01L21/02046
摘要： The invention provides chunk polycrystalline silicon having a concentration of carbon at the surface of 0.5-35 ppbw. A process for cleaning polycrystalline silicon chunks having carbon contaminations at the surface, includes a thermal treatment of the polycrystalline silicon chunks in a reactor at a temperature of 350 to 600° C., the polycrystalline silicon chunks being present in an inert gas atmosphere during the thermal treatment, and the polycrystalline silicon chunks after the thermal treatment having a concentration of carbon at the surface of 0.5-35 ppbw.
摘要翻译：本发明提供了在0.5-35ppbw的表面具有碳浓度的块状多晶硅。用于清洗表面具有碳污染的多晶硅块的方法包括在350-600℃的温度下对反应器中的多晶硅块进行热处理，多晶硅块存在于惰性气体气氛中热处理和热处理后的多晶硅块，其表面的碳浓度为0.5-35ppbw。

2. 发明授权

US06416393B2 Process for producing a semiconductor wafer 失效
标题翻译：半导体晶片的制造方法
公开(公告)号：US06416393B2
公开(公告)日：2002-07-09
申请号：US09824394
申请日：2001-04-02
申请人： Laszlo Fabry , Gabriele Lechner , Anton Schnegg , Andreas Ehlert
发明人： Laszlo Fabry , Gabriele Lechner , Anton Schnegg , Andreas Ehlert
IPC分类号： B24B719
CPC分类号： H01L21/02024 , B24B37/0056 , B24B37/042 , B24B37/08
摘要： A process is for producing a semiconductor wafer with a front surface and a back surface, in which the semiconductor wafer is subjected to two-sided polishing. The process includes the following: (a) producing a hydrophobic surface on the semiconductor wafer by treating the semiconductor wafer with an aqueous HF solution; (b) simultaneous polishing of the front surface and the back surface of the semiconductor wafer with a surface which has been rendered hydrophobic, with an alkaline polishing abrasive being continuously supplied between two rotating upper and lower polishing plates, which are both covered with a polishing cloth, the pH of the polishing abrasive being from pH 8.5 to pH 12.5; (c) after an intended polishing abrasion has been reached, supplying a stopping agent to the semiconductor wafer; and (d) removing the semiconductor wafer from the polishing plates. There is also a carrier for the double-side polishing of at least one semiconductor wafer, having a cutout for holding the semiconductor wafer which is lined with a shaped part made from plastic. The shaped part is constructed in such a manner that it divides a free space between an edge of the semiconductor wafer and the carrier into a plurality of separate empty spaces.
摘要翻译：一种制造具有正面和背面的半导体晶片的方法，其中半导体晶片进行双面抛光。该方法包括以下步骤：（a）通过用HF水溶液处理半导体晶片在半导体晶片上产生疏水表面; （b）用已经变得疏水的表面同时抛光半导体晶片的前表面和后表面，碱性抛光磨料被连续地供应在两个旋转的上和下抛光板之间，两个旋转的上和下抛光板都被抛光布，抛光磨料的pH为pH8.5至pH12.5; （c）在达到预期的抛光磨损之后，向半导体晶片供应止动剂; 和（d）从抛光板上去除半导体晶片。还有一种用于至少一个半导体晶片的双面抛光的载体，具有用于保持半导体晶片的切口，该半导体晶片衬有由塑料制成的成形部件。成形部分以这样的方式构造，即将半导体晶片的边缘与载体之间的自由空间分成多个分开的空间。

3. 发明授权

US08557210B2 Recycling of high-boiling compounds within an integrated chlorosilane system 有权
标题翻译：在一体化氯硅烷系统内回收高沸点化合物
公开(公告)号：US08557210B2
公开(公告)日：2013-10-15
申请号：US12281550
申请日：2007-02-21
申请人： Laszlo Fabry , Uwe Paetzold , Michael Stepp
发明人： Laszlo Fabry , Uwe Paetzold , Michael Stepp
IPC分类号： C01B33/107
CPC分类号： C01B33/10763
摘要： Trichlorosilane production is increased while simultaneously lowering environmental burden due to destruction and disposition of high boilers by feeding high boilers from trichlorosilane production or from polycrystalline silicon production into a fluidized bed for production of trichlorosilane from metallic silicon and hydrogen chloride.
摘要翻译：三氯硅烷生产增加，同时通过将来自三氯硅烷生产的高锅炉或从多晶硅生产送入用于从金属硅和氯化氢生产三氯硅烷的流化床，由于高锅炉的破坏和处置而降低环境负荷。

4. 发明授权

US5911889A Method of removing damaged crystal regions from silicon wafers 失效
标题翻译：从硅晶片去除损坏的晶体区域的方法
公开(公告)号：US5911889A
公开(公告)日：1999-06-15
申请号：US629378
申请日：1996-04-08
申请人： Laszlo Fabry , Bernd Passer , Edeltraud Steiger
发明人： Laszlo Fabry , Bernd Passer , Edeltraud Steiger
IPC分类号： H01L21/306 , B44C1/22
CPC分类号： H01L21/02019
摘要： A method is provided to remove crystal regions from silicon wafers which are damaged as a consequence of mechanical machining of the silicon wafers. The silicon wafers are pretreated with an aqueous solution containing hydrogen fluoride. Then the wafers are etched in an aqueous solution exposed to ultrasound and containing alkali metal hydroxide at temperatures from 55.degree. C. to 95.degree. C.
摘要翻译：提供了一种从硅晶片去除由于硅晶片的机械加工而损坏的晶体区域的方法。硅晶片用含氟化氢的水溶液预处理。然后将晶片在暴露于超声波的水溶液中蚀刻，并在55℃至95℃的温度下包含碱金属氢氧化物。

5. 发明申请

US20070163485A1 Single crystal and semiconductor wafer and apparatus and method for producing a single crystal 审中-公开
标题翻译：单晶和半导体晶片及其制造方法
公开(公告)号：US20070163485A1
公开(公告)日：2007-07-19
申请号：US11655509
申请日：2007-01-18
申请人： Laszlo Fabry , Gunter Strebel , Hans Oelkrug
发明人： Laszlo Fabry , Gunter Strebel , Hans Oelkrug
IPC分类号： C30B15/00 , C30B11/00 , C30B21/06
CPC分类号： C30B35/00 , C30B15/00 , Y10T117/10 , Y10T117/1064
摘要： The disclosure relates to an apparatus and a method for producing a single crystal of semiconductor material. The apparatus comprises a chamber and a crucible which is arranged in the chamber and is enclosed by a crucible heater, a radiation shield for shielding a growing single crystal and thermal insulation between the crucible heater and an inner wall of the chamber. The apparatus may include a resilient seal which seals a gap between the inner wall and the thermal insulation and forms an obstacle for the transport of gaseous iron carbonyls to the single crystal. The disclosure also relates to a method for producing a single crystal of semiconductor material by using the apparatus, the single crystal which is produced and a semiconductor wafer cut therefrom. The single crystal and the semiconductor wafer are distinguished by an edge region, which extends from the circumference to a distance of up to R-5 mm radially into the single crystal or the semiconductor wafer and has an iron concentration, wherein the iron concentration in the edge region is less than 1*109 atoms/cm3.
摘要翻译：本公开涉及一种用于制造半导体材料的单晶的装置和方法。该装置包括一个室和一个坩埚，该坩埚被布置在室中并由坩埚加热器封闭，用于屏蔽增长的单晶的辐射屏蔽以及坩埚加热器和室的内壁之间的绝热。该装置可以包括密封内壁和隔热层之间的间隙的弹性密封件，并且形成用于将气态铁羰基转移到单晶的障碍物。本公开还涉及通过使用该装置制造半导体材料的单晶的方法，所制造的单晶和从其切下的半导体晶片。单晶和半导体晶片的区别在于边缘区域，其从圆周延伸到直径为R-5mm的距离，直到单晶或半导体晶片，并具有铁浓度，其中铁浓度边缘区域小于1×10 9原子/ cm 3。

6. 发明授权

US4482535A Cosmetic preparation for teeth 失效
标题翻译：化妆品准备牙齿
公开(公告)号：US4482535A
公开(公告)日：1984-11-13
申请号：US387859
申请日：1982-05-28
申请人： Andras Sugar , Laszlo Fabry
发明人： Andras Sugar , Laszlo Fabry
IPC分类号： A61K8/00 , A61K20060101 , A61K6/083 , A61Q11/00 , A61Q11/02 , A61K7/16 , A61K31/74 , A61K31/78
CPC分类号： A61K6/083
摘要： The subject of the invention is a cosmetic preparation for teeth which is composed of one or more film-forming polymers--at least one of which is water soluble, partly soluble, emulsifiable or dispersible--and coloring agents. The composition ensures the aesthetic appearance of the teeth and can--by contrast with earlier products--be removed easily and rapidly.
摘要翻译： PCT No.PCT / HU81 / 00039 Sec。 371日期1982年5月28日 102（e）日期1982年5月28日PCT提交1981年10月2日PCT公布。公开号WO82 / 01128 1982年4月15日。本发明的主题是由一种或多种成膜聚合物组成的牙齿化妆品，其中至少一种是水溶性的，部分可溶的，可乳化的或可分散的和着色剂。该组合物确保了牙齿的美学外观，并且可以与早期产品相比较，可以容易且快速地去除。

7. 发明授权

US5219613A Process for producing storage-stable surfaces of polished silicon wafers 失效
标题翻译：抛光硅晶片的储存稳定表面的制造方法
公开(公告)号：US5219613A
公开(公告)日：1993-06-15
申请号：US863394
申请日：1992-04-03
申请人： Laszlo Fabry , Manfred Grundner , Peter John , Wolfgang Feichtner , Dieter Graefg , Rosemarie Winklharrer
发明人： Laszlo Fabry , Manfred Grundner , Peter John , Wolfgang Feichtner , Dieter Graefg , Rosemarie Winklharrer
IPC分类号： H01L21/312 , H01L21/316
CPC分类号： H01L21/3121 , H01L21/31654 , Y10S438/974
摘要： Silicon wafers are first subjected to an oxidative treatment and subsequey to exposure to organosilicon compounds which contain at least one radical in the molecule which is hydrolyzably bound to the silicon and at least one radical in the molecule having hydrophilic properties. Depending on the compound selected, more or less strongly hydrophilic or hydrophobic properties of the silicon surface can consequently be established under mild conditions. The wafers treated in such a manner have a high storage stability and retain their surface nature even under difficult climatic circumstances. The surface nature present after the oxidative treatment can then be restored particularly easily by hydrolysis.
摘要翻译：首先对硅晶片进行氧化处理，然后暴露于在分子中含有至少一个基团的有机硅化合物，其可水解地结合到硅和至少一个具有亲水性质的基团中。取决于所选择的化合物，因此可以在温和的条件下建立硅表面的或多或少的强亲水性或疏水性。以这种方式处理的晶片具有高的储存稳定性并且即使在困难的气候条件下也保持其表面性质。然后在氧化处理后存在的表面性质可以通过水解特别容易地恢复。

8. 发明申请

US20100147209A1 Polycrystalline Germanium-Alloyed Silicon And A Method For The Production Thereof 审中-公开
标题翻译：多晶锗合金硅及其制造方法
公开(公告)号：US20100147209A1
公开(公告)日：2010-06-17
申请号：US12630001
申请日：2009-12-03
申请人： Laszlo Fabry , Mikhail Sofin
发明人： Laszlo Fabry , Mikhail Sofin
IPC分类号： C01B33/06 , C30B23/00 , C30B15/00
CPC分类号： C23C16/22 , C01B33/035 , C22C28/00 , C23C16/0209 , C30B13/00 , C30B15/02 , C30B29/06 , C30B29/08 , C30B29/52 , Y10T428/298
摘要： A rod having a length of 0.5 m to 4 m and having a diameter of 25 mm to 220 mm, comprising a high-purity alloy composed of 0.1 to 50 mol % germanium and 99.9 to 50 mol % silicon, the alloy having been deposited on a thin silicon rod or on a thin germanium-alloyed silicon rod, the deposited alloy having a polycrystalline structure.
摘要翻译：长度为0.5μm至4μm，直径为25mm至220mm的棒，包括由0.1至50mol％的锗和99.9至50mol％的硅组成的高纯度合金，该合金已沉积在薄硅棒或薄的锗合金硅棒，沉积合金具有多晶结构。

9. 发明申请

US20090031945A1 SINGLE CRYSTAL AND SEMICONDUCTOR WAFER AND APPARATUS AND METHOD FOR PRODUCING A SINGLE CRYSTAL 审中-公开
标题翻译：单晶和半导体晶体及其制造方法
公开(公告)号：US20090031945A1
公开(公告)日：2009-02-05
申请号：US12175376
申请日：2008-07-17
申请人： Laszlo Fabry , Gunter Strebel , Hans Oelkrug
发明人： Laszlo Fabry , Gunter Strebel , Hans Oelkrug
IPC分类号： C30B15/10
CPC分类号： C30B35/00 , C30B15/00 , Y10T117/10 , Y10T117/1064
摘要： The disclosure relates to an apparatus and a method for producing a single crystal of semiconductor material. The apparatus comprises a chamber and a crucible which is arranged in the chamber and is enclosed by a crucible heater, a radiation shield for shielding a growing single crystal and thermal insulation between the crucible heater and an inner wall of the chamber. The apparatus may include a resilient seal which seals a gap between the inner wall and the thermal insulation and forms an obstacle for the transport of gaseous iron carbonyls to the single crystal. The disclosure also relates to a method for producing a single crystal of semiconductor material by using the apparatus, the single crystal which is produced and a semiconductor wafer cut therefrom. The single crystal and the semiconductor wafer are distinguished by an edge region, which extends from the circumference to a distance of up to R-5 mm radially into the single crystal or the semiconductor wafer and has an iron concentration, wherein the iron concentration in the edge region is less than 1*109 atoms/cm3.
摘要翻译：本公开涉及一种用于制造半导体材料的单晶的装置和方法。该装置包括一个室和一个坩埚，该坩埚被布置在室中并由坩埚加热器封闭，用于屏蔽增长的单晶的辐射屏蔽以及坩埚加热器和室的内壁之间的绝热。该装置可以包括密封内壁和隔热层之间的间隙的弹性密封件，并且形成用于将气态铁羰基转移到单晶的障碍物。本公开还涉及通过使用该装置制造半导体材料的单晶的方法，所制造的单晶和从其切下的半导体晶片。单晶和半导体晶片的区别在于边缘区域，其从圆周延伸到直径为R-5mm的距离，直到单晶或半导体晶片，并具有铁浓度，其中铁浓度边缘区域小于1×10 9原子/ cm 3。

10. 发明申请

US20090016947A1 RECYCLING OF HIGH-BOILING COMPOUNDS WITHIN AN INTEGRATED CHLOROSILANE SYSTEM 有权
标题翻译：高浓度化合物在一体化氯化石系统中的回收
公开(公告)号：US20090016947A1
公开(公告)日：2009-01-15
申请号：US12281550
申请日：2007-02-21
申请人： Laszlo Fabry , Uwe Paetzold , Michael Stepp
发明人： Laszlo Fabry , Uwe Paetzold , Michael Stepp
IPC分类号： C01B33/107
CPC分类号： C01B33/10763
摘要： Trichlorosilane production is increased while simultaneously lowering environmental burden due to destruction and disposition of high boilers by feeding high boilers from trichlorosilane production or from polycrystalline silicon production into a fluidized bed for production of trichlorosilane from metallic silicon and hydrogen chloride.
摘要翻译：三氯硅烷生产增加，同时通过将来自三氯硅烷生产的高锅炉或从多晶硅生产送入用于从金属硅和氯化氢生产三氯硅烷的流化床，由于高锅炉的破坏和处置而降低环境负荷。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式