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    • 6. 发明申请
    • SEMICONDUCTOR MEMORY DEVICE HAVING SENSE AMPLIFIER
    • 具有感测放大器的半导体存储器件
    • US20100188913A1
    • 2010-07-29
    • US12693798
    • 2010-01-26
    • Masahiro YOSHIHARAKatsumi ABE
    • Masahiro YOSHIHARAKatsumi ABE
    • G11C7/06G11C7/00
    • G11C7/12G11C7/08G11C2207/005
    • A semiconductor memory device includes a memory cell array, a page buffer, a data line pair, a differential amplifier and a precharger. The memory cell array includes a plurality of pages in which a plurality of memory cells are arranged. The page buffer is formed adjacent to the memory cell array, and includes a plurality of sense amplifiers configured to temporarily hold page data read from the memory cells in the page. The data line pair is arranged in the page buffer and is connected to the sense amplifiers. The differential amplifier is configured to amplify a potential difference between lines of the data line pair. The precharger is configured to precharge the data line pair to a predetermined potential. At least one of the differential amplifier and the precharger is formed in the page buffer, and the at least one circuit is electrically connected to the data line pair.
    • 半导体存储器件包括存储单元阵列,页缓冲器,数据线对,差分放大器和预充电器。 存储单元阵列包括多个存储单元布置在其中的多个页面。 页面缓冲器形成在与存储单元阵列相邻的位置,并且包括多个读出放大器,被配置为临时保持从页面中的存储器单元读取的页面数据。 数据线对被布置在页缓冲器中并连接到读出放大器。 差分放大器被配置为放大数据线对的线之间的电位差。 预充电器被配置为将数据线对预充电到预定电位。 差分放大器和预充电器中的至少一个形成在页面缓冲器中,并且至少一个电路电连接到数据线对。