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1. 发明授权

US08976355B2 Method of applying a pattern to a substrate, device manufacturing method and lithographic apparatus for use in such methods 有权
标题翻译：将图案应用于基板的方法，用于这种方法的器件制造方法和光刻设备
公开(公告)号：US08976355B2
公开(公告)日：2015-03-10
申请号：US13597806
申请日：2012-08-29
申请人： Stefan Cornelis Theodorus Van Der Sanden , Richard Johannes Franciscus Van Haren , Hubertus Johannes Gertrudus Simons , Remi Daniel Marie Edart , Xiuhong Wei , Michael Kubis , Irina Lyulina
发明人： Stefan Cornelis Theodorus Van Der Sanden , Richard Johannes Franciscus Van Haren , Hubertus Johannes Gertrudus Simons , Remi Daniel Marie Edart , Xiuhong Wei , Michael Kubis , Irina Lyulina
IPC分类号： G01B11/00 , G03F9/00 , G03C5/00 , G03F7/20
CPC分类号： G03F7/70616 , G03F7/70141 , G03F7/70633 , G03F9/7003 , G03F9/7088
摘要： A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate.
摘要翻译：衬底被加载到光刻设备的衬底支撑件上，之后设备测量衬底对准标记的位置。这些测量定义了第一校正信息，允许设备在衬底上的一个或多个所需位置上施加图案。附加的第二校正信息用于增强图案定位的精度，特别是校正标称对准格栅的较高阶失真。第二校正信息可以基于当对同一衬底施加先前图案时制作的对准标记的位置的测量。第二校正信息可以替代地或另外基于在当前衬底之前已被图案化的类似衬底上进行的测量。

2. 发明申请

US20110027704A1 Methods and Scatterometers, Lithographic Systems, and Lithographic Processing Cells 有权
标题翻译：方法和散射仪，平版印刷系统和平版印刷加工单元
公开(公告)号：US20110027704A1
公开(公告)日：2011-02-03
申请号：US12846652
申请日：2010-07-29
申请人： Hugo Augustinus Joseph Cramer , Arie Jeffrey Den Boef , Henricus Johannes Lambertus Megens , Hendrik Jan Hidde Smilde , Andrianus Johannes Hendrikus Schellekens , Michael Kubis
发明人： Hugo Augustinus Joseph Cramer , Arie Jeffrey Den Boef , Henricus Johannes Lambertus Megens , Hendrik Jan Hidde Smilde , Andrianus Johannes Hendrikus Schellekens , Michael Kubis
IPC分类号： G03F7/20 , G03B27/54 , G06K9/00
CPC分类号： G03F7/70641 , G01B11/02 , G01B11/22 , G01B11/24 , G01B11/30 , G01N21/47 , G01N21/88 , G03F7/70608 , G03F7/70625 , G03F7/70633 , G03F7/7065
摘要： In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is foamed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure.
摘要翻译：在确定在基板上的光刻工艺中使用的光刻设备的焦点的方法中，使用光刻工艺在基板上形成结构，该结构具有至少一个特征，该特征在印刷图案中具有不对称性作为光刻设备在基板上的焦点的函数。在用第一辐射束照射结构的同时形成和检测周期性结构的第一图像。第一图像使用非零阶衍射辐射的第一部分形成。周期性结构的第二图像被发泡并被检测，同时用第二辐射束照射结构。使用在衍射光谱中与第一部分对称相对的非零级衍射辐射的第二部分形成第二图像。确定测量的第一和第二部分光谱的强度的比率并用于确定周期性结构的轮廓的不对称性和/或提供焦点在基底上的指示。在相同的仪器中，被检测部分的强度变化被确定为整个结构的过程引起的变化的量度。可以从结构的测量中识别并排除具有不期望的工艺变化的结构区域。

3. 发明申请

US20120013881A1 Method and Apparatus for Determining an Overlay Error 有权
标题翻译：确定叠加误差的方法和装置
公开(公告)号：US20120013881A1
公开(公告)日：2012-01-19
申请号：US13181932
申请日：2011-07-13
申请人： Arie Jeffrey Den Boef , Maurits VAN DER SCHAAR , Andreas Fuchs , Martyn John Coogans , Kaustuve Bhattacharyya , Stephen Peter Morgan , Michael Kubis
发明人： Arie Jeffrey Den Boef , Maurits VAN DER SCHAAR , Andreas Fuchs , Martyn John Coogans , Kaustuve Bhattacharyya , Stephen Peter Morgan , Michael Kubis
IPC分类号： G03B27/54 , G06F19/00 , G01N21/47
CPC分类号： A01H1/06 , A01G22/00 , C12N15/8201 , G03B27/52 , G03B27/53 , G03F7/705 , G03F7/70633
摘要： A method of determining an overlay error. Measuring an overlay target having process-induced asymmetry. Constructing a model of the target. Modifying the model, e.g., by moving one of the structures to compensate for the asymmetry. Calculating an asymmetry-induced overlay error using the modified model. Determining an overlay error in a production target by subtracting the asymmetry-induced overlay error from a measured overlay error. In one example, the model is modified by varying asymmetry p(n′), p(n″) and the calculating an asymmetry-induced overlay error is repeated for a plurality of scatterometer measurement recipes and the step of determining an overlay error in a production target uses the calculated asymmetry-induced overlay errors to select an optimum scatterometer measurement recipe used to measure the production target.
摘要翻译：确定重叠错误的方法。测量具有过程引起的不对称性的覆盖目标。构建目标模型。修改模型，例如通过移动结构之一来补偿不对称性。使用修改的模型计算不对称引起的覆盖误差。通过从测量的重叠错误中减去不对称引起的覆盖误差来确定生产目标中的重叠错误。在一个示例中，通过改变不对称p（n'），p（n“）来修改模型，并且针对多个散射仪测量配方重复计算不对称引起的重叠误差，并且确定在生产目标使用计算的不对称引起的重叠误差来选择用于测量生产目标的最佳散射仪测量配方。

4. 发明申请

US20050050512A1 Method for projection of a circuit pattern, which is arranged on a mask, onto a semiconductor wafer 有权
标题翻译：将布置在掩模上的电路图案投影到半导体晶片上的方法
公开(公告)号：US20050050512A1
公开(公告)日：2005-03-03
申请号：US10917426
申请日：2004-08-13
申请人： Bernd Kochan , Juergen Karl , Michael Kubis , Norbert Haase
发明人： Bernd Kochan , Juergen Karl , Michael Kubis , Norbert Haase
IPC分类号： G03F7/20 , G06T7/00 , G06F17/50 , G03C5/00 , G03F9/00 , G06G7/62 , G06K9/00 , G21K5/10 , H01J37/08 , H01Q9/28
CPC分类号： G03F7/70991 , G03F7/705 , G03F7/70616 , G06T7/0004 , G06T2207/30148
摘要： A simulation is carried out of a projection based on an electronically stored circuit pattern and adjustable projection parameters and optical parameters which characterize the specific characteristics of a projection apparatus. Positions at which it is predicted that side lobes will occur in the event of an actual projection are identified in the calculated circuit pattern. The positions of the side lobes are transmitted to a manufacturing unit and are recorded in a measurement program. A wafer, which has been exposed by a mask, is inspected for side lobes, at least at precisely those transmitted positions using the measurement program. The adjustable projection parameters are adapted, a radiation-sensitive layer is removed from and reapplied to the wafer and the projection is repeated with the adapted projection parameters depending on the detection result. The control process is repeated until the side lobes have been completely prevented.
摘要翻译：基于电子存储的电路图案和表征投影设备的特定特性的可调投影参数和光学参数的投影进行模拟。在计算出的电路图案中，可以预测在实际投影的情况下发生旁瓣的位置。旁瓣的位置被传送到制造单元并记录在测量程序中。已经通过掩模曝光的晶片至少在使用测量程序的那些传输位置处被检查为旁瓣。可调节的投影参数被适配，辐射敏感层被去除并重新应用于晶片，并且根据检测结果，利用适配的投影参数重复投影。重复控制过程，直到旁瓣完全被防止。

5. 发明授权

US09140998B2 Metrology method and inspection apparatus, lithographic system and device manufacturing method 有权
标题翻译：计量方法和检验仪器，光刻系统和器件制造方法
公开(公告)号：US09140998B2
公开(公告)日：2015-09-22
申请号：US13294057
申请日：2011-11-10
申请人： Hendrik Jan Hidde Smilde , Arno Jan Bleeker , Patrick Warnaar , Willem Marie Julia Marcel Coene , Michael Kubis
发明人： Hendrik Jan Hidde Smilde , Arno Jan Bleeker , Patrick Warnaar , Willem Marie Julia Marcel Coene , Michael Kubis
IPC分类号： G06F17/00 , G06F15/18 , G01N21/55 , G03F7/20
CPC分类号： G03F7/70633 , G03F7/70483 , G03F7/70625 , G03F7/70641 , G06N99/005
摘要： Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor and a second branch leading to a substrate plane imaging sensor. A spatial light modulator is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus.
摘要翻译：公开了用于测量由基板上的光刻工艺形成的目标结构的方法。目标内的光栅结构小于测量光学系统的照明点和视场。光学系统具有通向光瞳平面成像传感器的第一分支和通向基板平面成像传感器的第二分支。空间光调制器被布置在光学系统的第二分支的中间光瞳平面中。 SLM赋予可编程的衰减模式，其可用于校正第一和第二照明模式或成像之间的不对称性。通过使用特定的目标设计和机器学习过程，衰减模式也可以被编程为充当滤波器功能，增强对诸如焦点的特定参数的敏感性。

6. 发明授权

US09069264B2 Metrology method and apparatus, and device manufacturing method 有权
标题翻译：计量方法和装置以及装置制造方法
公开(公告)号：US09069264B2
公开(公告)日：2015-06-30
申请号：US13542319
申请日：2012-07-05
申请人： Patrick Warnaar , Mark Van Schijndel , Michael Kubis
发明人： Patrick Warnaar , Mark Van Schijndel , Michael Kubis
IPC分类号： G06K9/46 , G03F1/44 , G03F7/20 , G03B27/54
CPC分类号： G03F7/70633 , G03F1/44 , G03F7/70683
摘要： A target structure including a periodic structure is formed on a substrate. An image of the target structure is detected while illuminating the target structure with a beam of radiation, the image being formed using a first part of non-zero order diffracted radiation while excluding zero order diffracted radiation. Intensity values extracted from a region of interest within the image are used to determine a property of the periodic structure. A processing unit recognizes locations of a plurality of boundary features in the image of the target structure to identify regions of interest. The number of boundary features in each direction is at least twice a number of boundaries of periodic structures within the target structure. The accuracy of locating the region is greater than by recognizing only the boundaries of the periodic structure(s).
摘要翻译：包括周期性结构的靶结构形成在基板上。在用辐射束照射目标结构的同时检测目标结构的图像，该图像使用非零次衍射辐射的第一部分形成，同时排除零级衍射辐射。使用从图像内的感兴趣区域提取的强度值来确定周期性结构的性质。处理单元识别目标结构的图像中的多个边界特征的位置以识别感兴趣的区域。每个方向上边界特征的数量至少是目标结构内周期性结构边界数量的两倍。定位区域的精度大于仅识别周期性结构的边界。

7. 发明授权

US07252913B2 Method for projection of a circuit pattern, which is arranged on a mask, onto a semiconductor wafer 有权
标题翻译：将布置在掩模上的电路图案投影到半导体晶片上的方法
公开(公告)号：US07252913B2
公开(公告)日：2007-08-07
申请号：US10917426
申请日：2004-08-13
申请人： Bernd Kochan , Juergen Karl , Michael Kubis , Norbert Haase
发明人： Bernd Kochan , Juergen Karl , Michael Kubis , Norbert Haase
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： G03F7/70991 , G03F7/705 , G03F7/70616 , G06T7/0004 , G06T2207/30148
摘要： A simulation is carried out of a projection based on an electronically stored circuit pattern and adjustable projection parameters and optical parameters which characterize the specific characteristics of a projection apparatus. Positions at which it is predicted that side lobes will occur in the event of an actual projection are identified in the calculated circuit pattern. The positions of the side lobes are transmitted to a manufacturing unit and are recorded in a measurement program. A wafer, which has been exposed by a mask, is inspected for side lobes, at least at precisely those transmitted positions using the measurement program. The adjustable projection parameters are adapted, a radiation-sensitive layer is removed from and reapplied to the wafer and the projection is repeated with the adapted projection parameters depending on the detection result. The control process is repeated until the side lobes have been completely prevented.
摘要翻译：基于电子存储的电路图案和表征投影设备的特定特性的可调投影参数和光学参数的投影进行模拟。在计算出的电路图案中，可以预测在实际投影的情况下发生旁瓣的位置。旁瓣的位置被传送到制造单元并记录在测量程序中。已经通过掩模曝光的晶片至少在使用测量程序的那些传输位置处被检查为旁瓣。可调节的投影参数被适配，辐射敏感层被去除并重新应用于晶片，并且根据检测结果，利用适配的投影参数重复投影。重复控制过程，直到旁瓣完全被防止。

8. 发明授权

US06352597B1 Method for producing a magnetic alloy powder 失效
标题翻译：磁性合金粉末的制造方法
公开(公告)号：US06352597B1
公开(公告)日：2002-03-05
申请号：US09554841
申请日：2000-07-14
申请人： Oliver Gutfleisch , Michael Kubis , Axel Handstein , Bernhard Gebel , Karl-Hartmut Mueller , Ivor Harris , Ludwig Schultz
发明人： Oliver Gutfleisch , Michael Kubis , Axel Handstein , Bernhard Gebel , Karl-Hartmut Mueller , Ivor Harris , Ludwig Schultz
IPC分类号： H01F106
CPC分类号： H01F1/0553 , B22F9/023 , B22F9/04 , B22F2999/00 , B22F2201/013 , B22F1/0085
摘要： A method is disclosed enabling a technologically controllable and economical production of a hard-magnetic powder composed of a samarium-cobalt base alloy for highly coercive permanent magnets. The method is based on a HDDR treatment in which a starting powder is subjected to hydrogenation with disproportionation of the alloy in a first method step under hydrogen and, in a subsequent, second method step under vacuum conditions, a hydrogen desorption with recombination of the alloy. A starting powder containing samarium and cobalt is treated in the first method step either at a high temperature in the range of 500° C. to 900° C. and with a high hydrogen pressure of >0.5 MPa or by applying an intensive fine grinding at a low temperature in the range of 50° C. to 500° C. and with a hydrogen pressure of >0.15 MPa. By means of the method of the invention, magnetic alloy powders can be produced from samarium-cobalt base alloys; highly coercive permanent magnets can be produced from these magnetic alloy powders, particularly by hot compacting or plastic bonding.
摘要翻译：公开了一种能够技术上可控和经济地生产由用于高矫顽永磁体的钐 - 钴基合金组成的硬磁粉末的方法。该方法基于HDDR处理，其中起始粉末在第一方法步骤中在氢气下以合金的歧化进行氢化，并且在随后的第二方法步骤中，在真空条件下，通过合金的复合氢解吸。在第一方法步骤中，在500℃至900℃的高温和> 0.5MPa的高氢气压力下或通过在在50℃至500℃的范围内的低温和> 0.15MPa的氢气压力。通过本发明的方法，可以由钐钴基合金制备磁性合金粉末; 可以通过这些磁性合金粉末，特别是通过热压实或塑性粘合来制造高矫顽永久磁铁。

9. 发明授权

US08709687B2 Substrate and patterning device for use in metrology, metrology method and device manufacturing method 有权
标题翻译：用于计量，计量方法和器件制造方法的基板和图案形成装置
公开(公告)号：US08709687B2
公开(公告)日：2014-04-29
申请号：US13401882
申请日：2012-02-22
申请人： Maurits Van Der Schaar , Patrick Warnaar , Kaustuve Bhattacharyya , Hendrik Jan Hidde Smilde , Michael Kubis
发明人： Maurits Van Der Schaar , Patrick Warnaar , Kaustuve Bhattacharyya , Hendrik Jan Hidde Smilde , Michael Kubis
IPC分类号： G03F9/00
CPC分类号： G03F9/7042 , G03F7/70616 , G03F7/70633 , G03F7/70683 , H01L23/544 , H01L23/58 , H01L2924/0002 , H01L2924/00
摘要： A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.
摘要翻译：来自图案形成装置的图案通过光刻装置施加到基板。应用模式包括产品功能和计量目标。测量目标包括大目标和小目标，用于测量覆盖。一些较小的目标分布在较大目标之间的位置，而其他小目标则放置在与大目标相同的位置。通过比较在相同位置使用小目标和大目标测量的值，可以校正使用所有小目标测量的参数值以获得更高的精度。大型目标主要位于划线范围内，而小目标则分布在产品区域内。

10. 发明申请

US20100040983A1 Compensation of Process-Induced Displacement 审中-公开
标题翻译：过程引起的位移补偿
公开(公告)号：US20100040983A1
公开(公告)日：2010-02-18
申请号：US12191492
申请日：2008-08-14
申请人： Heinrich Ollendorf , Thomas Zell , Michael Kubis , Steffen Schmidt , Elke Hietschold
发明人： Heinrich Ollendorf , Thomas Zell , Michael Kubis , Steffen Schmidt , Elke Hietschold
IPC分类号： G03F7/20
CPC分类号： G03F1/72
摘要： A method of manufacturing integrated circuits includes determining a process-induced displacement (e.g., a stress-induced displacement) between primary structures on a substrate and providing a photomask with mask features assigned to the primary structures. The distances between the mask features are set such that the process-induced displacement is compensated.
摘要翻译：制造集成电路的方法包括确定衬底上的主要结构之间的过程引起的位移（例如，应力引起的位移），并提供具有分配给主要结构的掩模特征的光掩模。掩模特征之间的距离被设置为使得处理引起的位移被补偿。

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