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1. 发明授权

US09984851B2 Ion implanter, magnetic field measurement device, and ion implantation method 有权
公开(公告)号：US09984851B2
公开(公告)日：2018-05-29
申请号：US14463041
申请日：2014-08-19
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Hiroyuki Kariya
IPC分类号： H01J37/317 , H01J37/147 , H01J37/24 , G01R33/07
CPC分类号： H01J37/243 , G01R33/07 , G01R33/072 , H01J37/05 , H01J37/147 , H01J37/3171 , H01J2237/055 , H01J2237/057 , H01J2237/152 , H01J2237/24514 , H01J2237/248 , H01J2237/3045
摘要： An ion implanter includes an energy analyzer electromagnet provided between an ion source and a processing chamber. The energy analyzer electromagnet includes a Hall probe configured to generate a measurement output in response to a deflecting magnetic field and an NMR probe configured to generate an NMR output. A control unit of the ion implanter includes a magnetic field measurement unit configured to measure the deflecting magnetic field in accordance with a known correspondence between the deflecting magnetic field and the measurement output, a magnetic field determination unit configured to determine the deflecting magnetic field from the NMR output, and a Hall probe calibration unit configured to update the known correspondence by using the deflecting magnetic field determined from the NMR output and a new measurement output of the Hall probe corresponding to the determined deflecting magnetic field.

2. 发明申请

US20160099139A1 MASS MICROSCOPE APPARATUS 审中-公开
标题翻译：大众显微镜设备
公开(公告)号：US20160099139A1
公开(公告)日：2016-04-07
申请号：US14874106
申请日：2015-10-02
申请人： CANON KABUSHIKI KAISHA
发明人： Masafumi Kyogaku
IPC分类号： H01J49/40 , H01J37/26 , H01J49/06 , H01J49/10 , H01J37/20
CPC分类号： H01J37/261 , H01J37/256 , H01J49/0004 , H01J2237/248 , H01J2237/2527
摘要： A mass microscope apparatus includes: a measuring unit including an ionization unit configured to ionize a sample present in an observation region, and a mass spectrometry unit configured to perform mass spectrometry of ions generated by the ionization unit; an object moving device configured to relatively move the observation region as to the sample; and a switching unit configured to switch measurement conditions of the measuring unit depending on whether the mass microscope apparatus is operating in a moving measurement mode where the observation region is moved by the object moving device to sequentially perform measurement by the measuring unit, and a stationary measurement mode where the observation region is stationary and measurement is performed by the measuring unit.
摘要翻译：质量显微镜装置包括：测量单元，包括被配置为离子化存在于观察区域中的样品的电离单元和质谱分析单元，其被配置为对由离子化单元产生的离子进行质谱分析; 被配置为使所述观察区域相对于所述样本移动的物体移动装置; 以及开关单元，其被配置为根据所述质量显微镜装置是否在所述移动测量模式中操作所述测量单元的测量条件，其中所述观察区域被所述物体移动装置移动以依次执行所述测量单元的测量，并且静止测量模式，其中观察区域是静止的，并且由测量单元执行测量。

3. 发明申请

US20150011088A1 METHODS AND APPARATUS FOR DEPOSITING AND/OR ETCHING MATERIAL ON A SUBSTRATE 有权
标题翻译：在基材上沉积和/或蚀刻材料的方法和装置
公开(公告)号：US20150011088A1
公开(公告)日：2015-01-08
申请号：US14381508
申请日：2013-02-27
申请人： Oxford Instruments Nanotechnology Tools Limited
发明人： Mark Edward McNie , Michael Joseph Cooke , Leslie Michael Lea
IPC分类号： H01J37/32 , G05B19/418 , H01L21/306 , C23C16/52 , C23C16/50
CPC分类号： H01J37/32926 , C23C16/50 , C23C16/52 , G05B19/418 , G05B2219/34198 , H01J37/32449 , H01J37/32816 , H01J37/32834 , H01J37/32917 , H01J2237/24564 , H01J2237/24585 , H01J2237/248 , H01J2237/3321 , H01J2237/334 , H01L21/306 , H01L21/30655 , H01L22/12 , H01L22/26
摘要： Methods are disclosed for depositing material onto and/or etching material from a substrate in a surface processing tool having a processing chamber, a controller and one or more devices for adjusting the process parameters within the chamber. The method comprises: the controller instructing the one or more devices according to a series of control steps, each control step specifying a defined set of process parameters that the one or more devices are instructed to implement, wherein at least one of the control steps comprises the controller instructing the one or more devices to implement a defined set of constant process parameters for the duration of the step, including at least a chamber pressure and gas flow rate through the chamber, which duration is less than the corresponding gas residence time (Tgr) of the processing chamber for the step.
摘要翻译：公开了用于在具有处理室，控制器和用于调节室内的工艺参数的一个或多个装置的表面处理工具中从衬底上沉积材料和/或蚀刻材料的方法。该方法包括：控制器根据一系列控制步骤指示一个或多个设备，每个控制步骤指定一个或多个设备被指示实现的一组定义的过程参数，其中至少一个控制步骤包括所述控制器指示所述一个或多个设备在所述步骤的持续时间内实现一组定义的恒定过程参数，包括至少通过所述室的腔室压力和气体流速，所述持续时间小于相应的气体停留时间（Tgr ）的步骤处理室。

4. 发明申请

US20140091232A1 CHARGED PARTICLE BEAM APPARATUS AND ELECTROSTATIC CHUCK APPARATUS 有权
标题翻译：充电颗粒光束装置和静电卡盘装置
公开(公告)号：US20140091232A1
公开(公告)日：2014-04-03
申请号：US14118892
申请日：2012-05-18
申请人： Tetsuji Ohsawa , Naoya Ishigaki
发明人： Tetsuji Ohsawa , Naoya Ishigaki
IPC分类号： H02N13/00 , H01J37/20
CPC分类号： H02N13/00 , H01J37/20 , H01J37/28 , H01J2237/2007 , H01J2237/248 , H01L21/6831
摘要： To improve an apparatus reliability by applying a voltage suitable to a situation, a charged-particle-beam apparatus 1 of the present invention includes: a sample stage 25; an electrostatic chuck 30; and an electrostatic-chuck controlling unit 13, and generates an image of a sample 24 by irradiating the sample 24 held on the sample stage 25 by the electrostatic chuck 30 with an electron beam 16. The electrostatic-chuck controlling unit 13, when the electrostatic chuck 30 holds the sample 24, applies a preset initial voltage to a chuck electrode of the electrostatic chuck 30; determines whether or not the sample 24 is normally clamped to the electrostatic chuck 30; and increases the voltage applied to the chuck electrode until determining that the sample 24 is clamped normally to the electrostatic chuck 30 if determining that the sample 24 is not clamped normally to the electrostatic chuck 30.
摘要翻译：为了通过施加适合于这种情况的电压来提高装置的可靠性，本发明的带电粒子束装置1包括：样品台25; 静电吸盘30; 和静电卡盘控制单元13，并且通过用电子束16通过静电卡盘30照射保持在样品台25上的样本24来产生样本24的图像。静电卡盘控制单元13当静电吸盘控制单元13 卡盘30保持样品24，将预设的初始电压施加到静电卡盘30的卡盘电极; 确定样品24是否正常夹在静电吸盘30上; 并且如果确定样品24没有正常地夹在静电卡盘30上，则增加施加到卡盘电极的电压，直到确定样品24正常地夹在静电卡盘30上。

5. 发明授权

US08173978B2 Method for controlling electron beam in multi-microcolumn and multi-microcolumn using the same 有权
标题翻译：用多微柱和多微柱控制电子束的方法
公开(公告)号：US08173978B2
公开(公告)日：2012-05-08
申请号：US11571695
申请日：2005-07-05
申请人： Ho Seob Kim , Byeng Jin Kim
发明人： Ho Seob Kim , Byeng Jin Kim
IPC分类号： H01J37/08
CPC分类号： H01J37/263 , B82Y10/00 , B82Y40/00 , H01J3/14 , H01J37/04 , H01J37/3007 , H01J37/302 , H01J37/3174 , H01J2237/1205 , H01J2237/248 , H01J2237/28 , H01J2237/31752
摘要： Provided is a method for controlling electron beams in a multi-microcolumn, in which unit microcolumns having an electron emitter, a lens, and a deflector are arranged in an n×m matrix. A voltage is uniformly or differentially applied to each electron emitter or extractor. The same control voltage or different voltages are applied to a region at coordinates in a control division area of each extractor to deflect the electron beams. Lens layers not corresponding to the extractors are collectively or individually controlled so as to efficiently control the electron beams of the unit microcolumn. Further, a multi-microcolumn using the method is provided.
摘要翻译：提供了一种用于控制多微柱中的电子束的方法，其中具有电子发射器，透镜和偏转器的单元微柱以n×m矩阵排列。电压均匀或差分施加到每个电子发射器或提取器。将相同的控制电压或不同的电压施加到每个提取器的控制分割区域中的坐标处的区域以偏转电子束。不对应于提取器的透镜层被集体地或单独地控制，以便有效地控制单元微柱的电子束。此外，提供了使用该方法的多微柱。

6. 发明申请

US20120080596A1 Laser Atom Probe and Laser Atom Probe Analysis Methods 审中-公开
标题翻译：激光原子探针和激光原子探针分析方法
公开(公告)号：US20120080596A1
公开(公告)日：2012-04-05
申请号：US13227505
申请日：2011-09-08
申请人： Wilfried Vandervorst
发明人： Wilfried Vandervorst
IPC分类号： H01J37/26
CPC分类号： H01J37/226 , H01J37/285 , H01J49/0004 , H01J2237/04 , H01J2237/05 , H01J2237/202 , H01J2237/248 , H01J2237/2855
摘要： A laser atom probe system and a method for analysing a specimen by laser atom probe tomography are disclosed. The system includes a specimen holder whereon a specimen to be analyzed may be mounted, the specimen having a tip shape. The system further includes a detector, an electrode arranged between the specimen holder and the detector, and a voltage source configured to apply a voltage difference between the specimen tip and the electrode. The system also includes at least one laser system configured to direct a laser beam laterally at the specimen tip and a tip shape monitoring means configured to detect and monitor the tip shape, and/or a means for altering and/or controlling one or more laser parameters of said laser beam(s) so as to maintain, restore or control said specimen tip shape.
摘要翻译：公开了一种激光原子探针系统和通过激光原子探针层析成像分析样品的方法。该系统包括可以安装待分析样品的样品架，样品具有尖端形状。所述系统还包括检测器，布置在所述检体保持器和检测器之间的电极，以及被配置为施加所述检测头和所述电极之间的电压差的电压源。该系统还包括至少一个激光系统，其被配置为在激光束的侧面引导激光束，以及尖端形状监测装置，被配置为检测和监视尖端形状，和/或用于改变和/或控制一个或多个激光器所述激光束的参数，以便维持，恢复或控制所述样品尖端形状。

7. 发明授权

US07601972B2 Inspection system by charged particle beam and method of manufacturing devices using the system 有权
公开(公告)号：US07601972B2
公开(公告)日：2009-10-13
申请号：US11907097
申请日：2007-10-09
申请人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Toshifumi Kimba , Hirosi Sobukawa , Shoji Yoshikawa , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi
发明人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Toshifumi Kimba , Hirosi Sobukawa , Shoji Yoshikawa , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi
IPC分类号： H01J37/18
CPC分类号： G03F7/70616 , G01N23/225 , H01J37/05 , H01J37/06 , H01J37/073 , H01J37/075 , H01J37/185 , H01J37/20 , H01J37/222 , H01J37/226 , H01J37/244 , H01J37/28 , H01J2237/0435 , H01J2237/057 , H01J2237/06316 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/2446 , H01J2237/24485 , H01J2237/24564 , H01J2237/248 , H01J2237/2482 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.

8. 发明申请

US20070284525A1 Line-width measurement adjusting method and scanning electron microscope 有权
标题翻译：线宽测量调整方法和扫描电子显微镜
公开(公告)号：US20070284525A1
公开(公告)日：2007-12-13
申请号：US11726966
申请日：2007-03-23
申请人： Masayuki Kuribara , Jun Matsumoto
发明人： Masayuki Kuribara , Jun Matsumoto
IPC分类号： H01J37/28 , G01N23/00
CPC分类号： G01B15/04 , G01N23/225 , H01J2237/24535 , H01J2237/24578 , H01J2237/248 , H01J2237/2816 , H01J2237/2817
摘要： A line-width measurement adjusting method, which is used when first and second electron beam intensity distributions for measuring a line width are produced from intensity distribution images of secondary electrons obtained respectively by scanning a first irradiation distance with an electron beam at first magnification, and by scanning a second irradiation distance with an electron beam at second magnification, includes the step of adjusting the second electron beam intensity distribution of the electron beam at the second magnification such that the second electron beam intensity distribution is equal to the first electron beam intensity distribution of the electron beam at first magnification. The second electron beam intensity distribution may be adjusted by increasing or decreasing a second irradiation distance when producing the electron beam intensity distribution.
摘要翻译：线宽测量调整方法，用于当用于测量线宽度的第一和第二电子束强度分布由分别通过在第一放大倍率下用电子束扫描第一照射距离获得的二次电子的强度分布图像产生时，通过在第二倍率下用电子束扫描第二照射距离，包括以第二倍率调整电子束的第二电子束强度分布的步骤，使得第二电子束强度分布等于第一电子束强度分布的电子束。可以通过在产生电子束强度分布时增加或减少第二照射距离来调节第二电子束强度分布。

9. 发明授权

US06803584B2 Electron beam control device 有权
标题翻译：电子束控制装置
公开(公告)号：US06803584B2
公开(公告)日：2004-10-12
申请号：US10366746
申请日：2003-02-14
申请人： Shiaki Murai , Kazuaki Yamamoto
发明人： Shiaki Murai , Kazuaki Yamamoto
IPC分类号： H01J3700
CPC分类号： H01J37/265 , H01J2237/0203 , H01J2237/248
摘要： An electron beam control device controls an electron beam for use, such as an electron beam exposure device and the like, wherein a track of an electron beam is not adversely Influenced by the amount of magnetic variation occurring influences. The electron beam control device which controls an electron beam for use, such as an electron microscope, an electron beam exposure and the like, wherein a magnetometric sensor for measuring an amount of magnetic variation which influences a track of the electron beam, occurring from surrounding influences, is provided.
摘要翻译：电子束控制装置控制使用的电子束，例如电子束曝光装置等，其中电子束的轨迹不受不利影响的磁性变化的影响。控制电子束如电子显微镜，电子束曝光等的电子束控制装置，其中，用于测量影响电子束的轨迹的磁性变化量的磁力计传感器，影响，提供。

10. 发明申请

US20180286630A1 Multi Charged Particle Beam Inspection Apparatus, and Multi Charged Particle Beam Inspection Method 审中-公开
公开(公告)号：US20180286630A1
公开(公告)日：2018-10-04
申请号：US15902157
申请日：2018-02-22
申请人： NUFLARE TECHNOLOGY, INC.
发明人： Hidekazu Takekoshi
IPC分类号： H01J37/22 , H01J37/244 , H01J37/26 , H01J37/153
CPC分类号： H01J37/26 , H01J37/153 , H01J37/222 , H01J37/244 , H01J37/28 , H01J2237/153 , H01J2237/2002 , H01J2237/248 , H01J2237/2806 , H01J2237/2809 , H01J2237/2817 , H01J2237/2826
摘要： A multi charged particle beam inspection apparatus includes a plurality of sensors, arranged inside or on a periphery of a secondary electron image acquisition mechanism, to measure a plurality of interfering factors, a determination circuit to determine, for each interfering factor, whether change exceeding a corresponding threshold is a first case which returns to the original state within a predetermined time period, or a second case which does not return to the original state even if the predetermined time period has passed, and a comparison circuit to input a reference image of a region corresponding to the secondary electron image acquired, and compare the secondary electron image with the reference image, wherein in the case where change of the second case occurs, the secondary electron image acquisition mechanism suspends the acquisition operation of the secondary electron image, and calibrates a change amount of the multiple charged particle beams.

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