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1. 发明申请

US20180254167A1 Patterned Substrate Imaging Using Multiple Electron Beams 审中-公开
公开(公告)号：US20180254167A1
公开(公告)日：2018-09-06
申请号：US15872570
申请日：2018-01-16
申请人： Dongfang Jingyuan Electron Limited
发明人： Yan Zhao , Weiqiang Sun , Tao Feng
IPC分类号： H01J37/147 , H01J37/20 , H01J37/22 , H01J37/12 , H01J37/244 , H01J37/145 , H01J37/28
CPC分类号： H01J37/1475 , H01J37/09 , H01J37/12 , H01J37/145 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/28 , H01J2237/04 , H01J2237/0453 , H01J2237/152 , H01J2237/202 , H01J2237/20285 , H01J2237/221 , H01J2237/24475 , H01J2237/24592 , H01J2237/2817
摘要： A method for imaging a surface of a substrate using a multi-beam imaging system includes: modifying an electron beam using a multipole-field device; generating beamlets from the electron beam using a beam-splitting device having multiple apertures; in response to projecting foci of the beamlets onto the surface, driving the beamlets using a deflector set to scan a region of the surface for receiving signals based on electrons scattered from the region; and determining an image of the region for inspection based on the signals. The multi-beam imaging system includes: an electron source; a first multipole-field device for beam shaping and beam aberration correction; a beam-splitting device; a projection lens set; a deflector set; an objective lens set; a detector array; a second multipole-field device; a processor; and a memory storing instructions to determine an image of the region for inspection based on the signals.

2. 发明申请

US20180233316A1 ELECTRON BEAM PROJECTOR WITH LINEAR THERMAL CATHODE 审中-公开
公开(公告)号：US20180233316A1
公开(公告)日：2018-08-16
申请号：US15751606
申请日：2017-04-05
申请人： STATE ENTERPRISE "INTERNATIONAL CENTER FOR ELECTRON BEAM TECHNOLOGI
发明人： Kostyantyn Yu YAKOVCHUK , Vitalii O BARSKOV , Ivan G. KLYMENKO , Yuriy E. RUDOY
IPC分类号： H01J29/48 , H01J37/065 , H01J37/305 , H01J29/82 , H01J29/04
CPC分类号： H01J29/488 , H01J29/04 , H01J29/48 , H01J29/82 , H01J37/065 , H01J37/305 , H01J2229/481 , H01J2237/152
摘要： An electron beam projector with a linear thermal cathode (7) for electron beam heating consists of a beam guide (1) which comprises a deflecting electromagnetic system (2) and accommodates an accelerating anode (3) fixed on it by a posts (10), where anode is connected by a high-voltage insulators (4) through a cathode plate (5) to a cathode assembly (6), that includes the linear thermal cathode (7) fastened in a cathode holders (8), and a focusing electrode (9). The accelerating anode (3) comprises a plate (11) rigidly fastened to it for hermetical separation of the cathode (7) and the beam guide (1) parts of the projector, wherein the common optical axis of a cathode assembly (6) and the accelerating anode (3) is deflected from a beam guide optical axis by an angle a that is equal to 10÷30°.

3. 发明授权

US09984848B2 Multi-beam lens device, charged particle beam device, and method of operating a multi-beam lens device 有权
公开(公告)号：US09984848B2
公开(公告)日：2018-05-29
申请号：US15066816
申请日：2016-03-10
申请人： ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH
发明人： Jürgen Frosien
IPC分类号： H01J37/141 , H01J37/12 , H01J37/147 , H01J37/21 , H01J37/28
CPC分类号： H01J37/12 , H01J37/1474 , H01J37/21 , H01J37/28 , H01J2237/1516 , H01J2237/152 , H01J2237/24475 , H01J2237/2448
摘要： A multi-beam lens device is described, which includes: a first beam passage for a first charged particle beam formed along a first direction between a first beam inlet of the first beam passage and a first beam outlet of the first beam passage; a second beam passage for a second charged particle beam formed along a second direction between a second beam inlet of the second beam passage and a second beam outlet of the second beam passage, wherein the first direction and the second direction are inclined with respect to each other by an angle (α) of 5° or more such that the first beam passage approaches the second beam passage toward the first beam outlet; and a common excitation coil or a common electrode arrangement configured for focussing the first charged particle beam and the second charged particle beam. Further, a charged particle beam device as well as a method of operating a multi-beam lens device are described.

4. 发明授权

US09793087B2 Techniques and apparatus for manipulating an ion beam 有权
公开(公告)号：US09793087B2
公开(公告)日：2017-10-17
申请号：US14849813
申请日：2015-09-10
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： James S. Buff , Victor Benveniste , Frank Sinclair
IPC分类号： H01J37/147 , H01J37/14 , H01J37/317
CPC分类号： H01J37/1475 , H01J37/14 , H01J37/1471 , H01J37/1478 , H01J37/3171 , H01J2237/1415 , H01J2237/152 , H01J2237/31701
摘要： A method may include: generating an ion beam from an ion source, the ion beam having an initial direction of propagation; deflecting the ion beam at an initial angle of inclination with respect to the initial direction of propagation; passing the ion beam through an aperture in a magnetic assembly; and generating in the aperture, a quadrupole field extending along a first direction perpendicular to the initial direction of propagation of the ion beam, and a dipole field extending along a second direction perpendicular to the first direction and the initial direction of propagation.

5. 发明授权

US09642233B2 Method and arrangement for generating a jet of fluid, method and system for transforming the jet into a plasma, and uses of said system 有权
公开(公告)号：US09642233B2
公开(公告)日：2017-05-02
申请号：US14123791
申请日：2012-06-08
申请人： Soriba Franciszek (François) Sylla , Victor Armand Malka , Alessandro Federico Flacco , Mina Ivanova Veltcheva , Subhendu Kahaly
发明人： Soriba Franciszek (François) Sylla , Victor Armand Malka , Alessandro Federico Flacco , Mina Ivanova Veltcheva , Subhendu Kahaly
IPC分类号： H05G2/00 , H05H1/54 , H01J37/32 , A61B6/00 , H05H1/22
CPC分类号： H05G2/006 , A61B6/40 , H01J37/32009 , H01J37/32669 , H01J2237/152 , H01J2893/0063 , H05G2/00 , H05G2/001 , H05G2/003 , H05G2/008 , H05H1/22 , H05H1/54 , H05H2277/10 , H05H2277/11 , H05H2277/113
摘要： A method and apparatus for generating a pulsed jet of fluid, and transforming the jet into a plasma. The method includes using a high-pressure rapid solenoid valve, and a pipe mounted on an outlet opening of the solenoid valve to produce a pulsed fluid jet which is sub-millimetric in size, and the atomic density of which is more than 1020 cm−3.

6. 发明申请

US20160329186A1 Charged Particle Beam Device 有权
标题翻译：带电粒子束装置
公开(公告)号：US20160329186A1
公开(公告)日：2016-11-10
申请号：US15109230
申请日：2014-12-16
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Wen LI , Ryo KADOI , Kazuki IKEDA , Hiroyuki TAKAHASHI , Hajime KAWANO
IPC分类号： H01J37/147 , H01J37/244 , H01J37/28
CPC分类号： H01J37/1472 , H01J37/244 , H01J37/28 , H01J2237/1504 , H01J2237/1508 , H01J2237/152 , H01J2237/1534 , H01J2237/2804 , H01J2237/2806
摘要： A processing apparatus and a processing method are provided, which use a charged particle beam device that achieves defection of secondary electrons/reflected electrons at a large angle and cancels out noises of an electromagnetic deflector and an electrostatic deflector to suppress a position shift of a primary electron beam caused by circuit noises of a primary beam/secondary beam separation circuit. In the charged particle beam device that includes an electronic optical system radiating a concentrated electron beam onto a sample placed on a stage to perform scanning and captures an image of the sample, a reference signal and a signal generation unit of a voltage-source control signal applied to the electrostatic deflector generating the electrostatic deflector and a reference signal and a signal generation unit of a current-source control signal applied to the electromagnetic deflector generating a magnetic field are made common in an overlapping-electromagnetic-deflector control unit that controls a path of the secondary electrons/reflected electrons incident on a detector, and frequency characteristics and phase characteristics of the voltage control signal are coincident with those of the current-source control signal.
摘要翻译：提供一种处理装置和处理方法，其使用以大角度实现二次电子/反射电子的偏离的带电粒子束装置，并且消除电磁偏转器和静电偏转器的噪声，以抑制初级电子束由主光束/次光束分离电路的电路噪声引起。在带电粒子束装置中，包括电子光学系统，该电子光学系统将集中的电子束辐射到放置在载物台上的样品上以进行扫描并捕获样品的图像，参考信号和电压源控制信号的信号产生单元施加到产生静电偏转器的静电偏转器，并且施加到产生磁场的电磁偏转器的电流源控制信号的参考信号和信号产生单元在控制路径的重叠电磁偏转器控制单元中是共同的的入射到检测器上的二次电子/反射电子，并且电压控制信号的频率特性和相位特性与电流源控制信号的频率特性和相位特性一致。

7. 发明授权

US09472372B2 Charged particle beam writing apparatus and charged particle beam writing method 有权
标题翻译：带电粒子束写入装置和带电粒子束写入方法
公开(公告)号：US09472372B2
公开(公告)日：2016-10-18
申请号：US14798797
申请日：2015-07-14
申请人： NuFlare Technology, Inc.
发明人： Taku Yamada , Kaoru Tsuruta , Yasuyuki Taneda , Kenji Ohtoshi
IPC分类号： G21K5/04 , H01J37/147 , H01J37/141 , H01J37/04
CPC分类号： H01J37/1472 , H01J37/045 , H01J37/141 , H01J37/3174 , H01J2237/022 , H01J2237/121 , H01J2237/14 , H01J2237/1516 , H01J2237/152 , H01J2237/31776
摘要： A charged particle beam writing apparatus includes a stage configured to mount a sample placed thereon; an electron optical column including a charged particle gun and deflector, wherein the charged particle gun is configured to emit a charged particle beam, and the deflector includes a plurality of deflecting electrodes configured to control a path of the charged particle beam; an ozone introducing mechanism configured to introduce ozone into the electron optical column; a first voltage supply unit configured to apply a deflection voltage to the plurality of deflecting electrodes to deflect the charged particle beam; and a second voltage supply unit configured to apply an identical negative DC voltage to the plurality of deflecting electrodes, wherein a negative voltage in which the deflection voltage and the negative DC voltage are added is applied to the plurality of deflecting electrodes while the sample is irradiated by the charged particle beam.
摘要翻译：一种带电粒子束写入装置，包括：被配置为安装其上放置的样品的台; 包括带电粒子枪和偏转器的电子光学柱，其中所述带电粒子枪被配置为发射带电粒子束，并且所述偏转器包括被配置为控制所述带电粒子束的路径的多个偏转电极; 臭氧引入机构，被配置为将臭氧引入到电子光学柱中; 第一电压供给单元，被配置为向所述多个偏转电极施加偏转电压以使所述带电粒子束偏转; 以及第二电压供给单元，被配置为向所述多个偏转电极施加相同的负DC电压，其中，在所述多个偏转电极被照射时，将所述偏转电压和所述负的DC电压相加的负电压施加到所述多个偏转电极通过带电粒子束。

8. 发明授权

US09401260B2 Adjustable mass resolving aperture 有权
标题翻译：可调质量分辨孔径
公开(公告)号：US09401260B2
公开(公告)日：2016-07-26
申请号：US14217064
申请日：2014-03-17
申请人： GLENN LANE FAMILY LIMITED LIABILITY LIMITED PARTNERSHIP
发明人： Glenn E. Lane
IPC分类号： H01J37/08 , H01J37/317 , H01J37/09
CPC分类号： H01J37/3007 , C23C14/48 , C23C14/54 , H01J37/08 , H01J37/09 , H01J37/3171 , H01J49/062 , H01J49/26 , H01J2237/0213 , H01J2237/04 , H01J2237/0455 , H01J2237/152 , H01J2237/31701 , H01L21/265
摘要： Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture. Embodiments of the invention also relate to the filtering of a flow of charged particles through a closed plasma channel (CPC) superconductor, or boson energy transmission system.
摘要翻译：本发明的实施例涉及可用于离子注入系统中的质量分辨孔径，该离子注入系统基于离子束中不需要的注入质量比（和/或质荷比）来选择性地排除离子种类部件。本发明的实施例涉及一种质量分辨孔径，该质量分辨孔径被分段，可调节和/或呈现出将撞击孔的迎面而来的离子物质的曲面。本发明的实施例还涉及通过封闭的等离子体通道（CPC）超导体或玻色子能量传输系统对带电粒子的流过滤。

9. 发明申请

US20160189917A1 SYSTEMS AND METHODS FOR BEAM ANGLE ADJUSTMENT IN ION IMPLANTERS WITH BEAM DECELARATION 审中-公开
标题翻译：光束离散植入物中光束角度调整的系统与方法
公开(公告)号：US20160189917A1
公开(公告)日：2016-06-30
申请号：US14979653
申请日：2015-12-28
申请人： Axcelis Technologies, Inc.
发明人： Bo H. Vanderberg , Edward C. Eisner
IPC分类号： H01J37/147 , H01J37/05 , H01J37/317
CPC分类号： H01J37/1475 , H01J37/05 , H01J37/09 , H01J37/1478 , H01J37/3171 , H01J2237/0458 , H01J2237/057 , H01J2237/152 , H01J2237/24528 , H01J2237/30455 , H01J2237/30472 , H01J2237/31701
摘要： An ion implantation system employs a mass analyzer for both mass analysis and angle correction. An ion source generates an ion beam along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion beam. A resolving aperture within an aperture assembly is located downstream of the mass analyzer component and along the beam path. The resolving aperture has a size and shape according to a selected mass resolution and a beam envelope of the ion beam. An angle measurement system is located downstream of the resolving aperture and obtains an angle of incidence value of the ion beam. A control system derives a magnetic field adjustment for the mass analyzer according to the angle of incidence value of the ion beam from the angle measurement system.
摘要翻译：离子注入系统采用质量分析仪进行质量分析和角度校正。离子源沿着光束路径产生离子束。质量分析仪位于离子源的下游，对离子束进行质量分析和角度校正。孔组件内的分辨孔位于质量分析器部件的下游并且沿着光束路径。分辨孔径根据所选质量分辨率和离子束的束包络具有尺寸和形状。角度测量系统位于分辨孔径的下游，并获得离子束的入射角。控制系统根据来自角度测量系统的离子束的入射角度，对质量分析器进行磁场调整。

10. 发明授权

US09263230B2 Method for transmitting a broadband ion beam and ion implanter 有权
标题翻译：用于传输宽带离子束和离子注入机的方法
公开(公告)号：US09263230B2
公开(公告)日：2016-02-16
申请号：US14394591
申请日：2012-08-06
申请人： Libo Peng , Huiyue Long , Junyu Xie
发明人： Libo Peng , Huiyue Long , Junyu Xie
IPC分类号： G21K5/04 , H01J37/147 , H01J37/05 , H01J37/317
CPC分类号： H01J37/1472 , H01J37/05 , H01J37/147 , H01J37/1475 , H01J37/3171 , H01J2237/055 , H01J2237/057 , H01J2237/152
摘要： A method for transmitting a broadband ion beam (100) and an ion implanter adopt an analyzing magnetic field (1), a calibration magnetic field (2) and an analyzing grating (6) to transmit a broadband ion beam. If the analyzing magnetic field (1) enables the broadband ion beam (100) emitted into the analyzing magnetic field from an incident face (101) thereof to be deflected anticlockwise in a horizontal direction, the calibration magnetic field (2) enables an ion beam diffusing again after passing through the analyzing grating (6) to be deflected clockwise in the horizontal direction; if the analyzing magnetic field (1) enables the broadband ion beam (100) emitted into the analyzing magnetic field from the incident face (101) thereof to be deflected clockwise in the horizontal direction, the calibration magnetic field (2) enables an ion beam diffusing again after passing through the analyzing grating (6) to be deflected anticlockwise in the horizontal direction. The analyzing magnetic field (1) and the calibration magnetic field (2) enable the ion beam to be deflected along different directions in the horizontal direction, so that distribution of the required ions in the broadband ion beam (100) when emitted out of the calibration magnetic field (2) from an emergence face (202) thereof is the same as the distribution when being emitted into the analyzing magnetic field.
摘要翻译：用于传输宽带离子束（100）和离子注入机的方法采用分析磁场（1），校准磁场（2）和分析光栅（6）来传输宽带离子束。如果分析磁场（1）使得从其入射面（101）发射到分析磁场中的宽带离子束（100）在水平方向上逆时针偏转，则校准磁场（2）能够使离子束在通过分析光栅（6）之后再次扩散以在水平方向上顺时针偏转; 如果分析磁场（1）使得从其入射面（101）发射到分析磁场中的宽带离子束（100）能够在水平方向上顺时针偏转，则校准磁场（2）能够使离子束在通过分析光栅（6）之后再次扩散，以在水平方向上逆时针方向偏转。分析磁场（1）和校准磁场（2）使得离子束沿水平方向沿着不同的方向偏转，使得当宽带离子束（100）中发射出来时所需的离子在宽带离子束（100）中的分布来自其出射面（202）的校准磁场（2）与发射到分析磁场中时的分布相同。

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