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1. 发明授权

US09343666B2 Damascene metal-insulator-metal (MIM) device with improved scaleability 有权
标题翻译：大马士革金属绝缘体金属（MIM）装置，具有改进的可扩展性
公开(公告)号：US09343666B2
公开(公告)日：2016-05-17
申请号：US13529284
申请日：2012-06-21
申请人： Suzette K. Pangrle , Steven Avanzino , Sameer Haddad , Michael Vanbuskirk , Manuj Rathor , James Xie , Kevin Song , Christie Marrian , Bryan Choo , Fei Wang , Jeffery A. Shields
发明人： Suzette K. Pangrle , Steven Avanzino , Sameer Haddad , Michael Vanbuskirk , Manuj Rathor , James Xie , Kevin Song , Christie Marrian , Bryan Choo , Fei Wang , Jeffery A. Shields
IPC分类号： H01L21/20 , H01L45/00 , H01L27/24
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1633 , H01L45/1675 , H01L45/1683
摘要： A present method of fabricating a memory device includes the steps of providing a dielectric layer, providing an opening in the dielectric layer, providing a first conductive body in the opening, providing a switching body in the opening, the first conductive body and switching body filling the opening, and providing a second conductive body over the switching body. In an alternate embodiment, a second dielectric layer is provided over the first-mentioned dielectric layer, and the switching body is provided in an opening in the second dielectric layer.
摘要翻译：制造存储器件的现有方法包括以下步骤：提供电介质层，在电介质层中提供开口，在开口中提供第一导电体，在开口中提供开关体，第一导电体和开关体填充物并且在开关体上设置第二导电体。在替代实施例中，在第一介电层上提供第二电介质层，并且开关体设置在第二电介质层的开口中。

2. 发明授权

US08089113B2 Damascene metal-insulator-metal (MIM) device 有权
标题翻译：大马士革金属绝缘子金属（MIM）器件
公开(公告)号：US08089113B2
公开(公告)日：2012-01-03
申请号：US11633929
申请日：2006-12-05
申请人： Suzette K. Pangrle , Steven Avanzino , Sameer Haddad , Michael VanBuskirk , Manuj Rathor , James Xie , Kevin Song , Christie Marrian , Bryan Choo , Fei Wang , Jeffrey A. Shields
发明人： Suzette K. Pangrle , Steven Avanzino , Sameer Haddad , Michael VanBuskirk , Manuj Rathor , James Xie , Kevin Song , Christie Marrian , Bryan Choo , Fei Wang , Jeffrey A. Shields
IPC分类号： H01L29/94 , H01L27/108
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/122 , H01L45/1233 , H01L45/146 , H01L45/1666
摘要： The present method of fabricating a memory device includes the steps of providing a dielectric layer, providing an opening in the dielectric layer, providing a first conductive body in the opening in the dielectric layer, providing a switching body in the opening, and providing a second conductive body in the opening.
摘要翻译：制造存储器件的本方法包括以下步骤：提供电介质层，在电介质层中提供开口，在电介质层的开口中提供第一导电体，在开口中提供开关体，并提供第二导电体在开口处。

3. 发明申请

US20080123401A1 Damascene metal-insulator-metal (MIM) device with improved scaleability 有权
标题翻译：大马士革金属绝缘体金属（MIM）装置，具有改进的可扩展性
公开(公告)号：US20080123401A1
公开(公告)日：2008-05-29
申请号：US11521204
申请日：2006-09-14
申请人： Suzette K. Pangrle , Steven Avanzino , Sameer Haddad , Michael VanBuskirk , Manuj Rathor , James Xie , Kevin Song , Christie Marrian , Bryan Choo , Fei Wang , Jeffrey A. Shields
发明人： Suzette K. Pangrle , Steven Avanzino , Sameer Haddad , Michael VanBuskirk , Manuj Rathor , James Xie , Kevin Song , Christie Marrian , Bryan Choo , Fei Wang , Jeffrey A. Shields
IPC分类号： G11C11/34 , H01L21/44
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1633 , H01L45/1675 , H01L45/1683
摘要： A present method of fabricating a memory device includes the steps of providing a dielectric layer;, providing an opening in the dielectric layer, providing a first conductive body in the opening, providing a switching body in the opening, the first conductive body and switching body filling the opening, and providing a second conductive body over the switching body. In an alternate embodiment, a second dielectric layer is provided over the first-mentioned dielectric layer, and the switching body is provided in an opening in the second dielectric layer.
摘要翻译：本发明的制造存储器件的方法包括以下步骤：提供电介质层;在电介质层中提供开口，在开口中提供第一导电体，在开口中提供开关体，第一导电体和开关体填充开口，并且在开关体上提供第二导电体。在替代实施例中，在第一介电层上提供第二电介质层，并且开关体设置在第二电介质层的开口中。

4. 发明授权

US08232175B2 Damascene metal-insulator-metal (MIM) device with improved scaleability 有权
标题翻译：大马士革金属绝缘体金属（MIM）装置，具有改进的可扩展性
公开(公告)号：US08232175B2
公开(公告)日：2012-07-31
申请号：US11521204
申请日：2006-09-14
申请人： Suzette K. Pangrle , Steven Avanzino , Sameer Haddad , Michael VanBuskirk , Manuj Rathor , James Xie , Kevin Song , Christie Marrian , Bryan Choo , Fei Wang , Jeffrey A. Shields
发明人： Suzette K. Pangrle , Steven Avanzino , Sameer Haddad , Michael VanBuskirk , Manuj Rathor , James Xie , Kevin Song , Christie Marrian , Bryan Choo , Fei Wang , Jeffrey A. Shields
IPC分类号： H01L21/20
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1633 , H01L45/1675 , H01L45/1683
摘要： A present method of fabricating a memory device includes the steps of providing a dielectric layer, providing an opening in the dielectric layer, providing a first conductive body in the opening, providing a switching body in the opening, the first conductive body and switching body filling the opening, and providing a second conductive body over the switching body. In an alternate embodiment, a second dielectric layer is provided over the first-mentioned dielectric layer, and the switching body is provided in an opening in the second dielectric layer.
摘要翻译：制造存储器件的现有方法包括以下步骤：提供电介质层，在介电层中提供开口，在开口中提供第一导电体，在开口中提供开关体，第一导电体和开关体填充物并且在开关体上设置第二导电体。在替代实施例中，在第一介电层上提供第二电介质层，并且开关体设置在第二电介质层的开口中。

5. 发明申请

US20080132068A1 Damascene metal-insulator-metal (MIM) device 有权
标题翻译：大马士革金属绝缘子金属（MIM）器件
公开(公告)号：US20080132068A1
公开(公告)日：2008-06-05
申请号：US11633929
申请日：2006-12-05
申请人： Suzette K. Pangrle , Steven Avanzino , Sameer Haddad , Michael VanBuskirk , Manuj Rathor , James Xie , Kevin Song , Christie Marrian , Bryan Choo , Fei Wang , Jeffrey A. Shields
发明人： Suzette K. Pangrle , Steven Avanzino , Sameer Haddad , Michael VanBuskirk , Manuj Rathor , James Xie , Kevin Song , Christie Marrian , Bryan Choo , Fei Wang , Jeffrey A. Shields
IPC分类号： H01L21/44
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/122 , H01L45/1233 , H01L45/146 , H01L45/1666
摘要： The present method of fabricating a memory device includes the steps of providing a dielectric layer, providing an opening in the dielectric layer, providing a first conductive body in the opening in the dielectric layer, providing a switching body in the opening, and providing a second conductive body in the opening.
摘要翻译：制造存储器件的本方法包括以下步骤：提供电介质层，在电介质层中提供开口，在电介质层的开口中提供第一导电体，在开口中提供开关体，并提供第二导电体在开口处。

6. 发明授权

US07622389B1 Selective contact formation using masking and resist patterning techniques 有权
标题翻译：使用掩模和抗蚀剂图案化技术的选择性接触形成
公开(公告)号：US07622389B1
公开(公告)日：2009-11-24
申请号：US11411353
申请日：2006-04-25
申请人： Kyunghoon Min , Mark Chang , Ning Cheng , Brian Osborn , Kevin Song , Fei Wang , Angela Hui , Hiroyuki Kinoshita , Kuo-Tung Chang
发明人： Kyunghoon Min , Mark Chang , Ning Cheng , Brian Osborn , Kevin Song , Fei Wang , Angela Hui , Hiroyuki Kinoshita , Kuo-Tung Chang
IPC分类号： H01L21/302
CPC分类号： H01L27/11526 , H01L27/11548
摘要： A method for manufacturing a semiconductor device including selective conductive contacts includes the step of depositing a resist over first and second memory device components, each of the first and second components comprising junctions formed in the substrate and a gate formed on the substrate between the junctions. The resist is then removed from the second components to thereby form a resist opening above each of the second component control gates and junctions. The resist is then etched to thereby expose each of the first component control gates but not the substrate surrounding the first component control gates. Conductive contacts are then formed on the exposed first component control gates, and the second component control gates and junctions.
摘要翻译：包括选择性导电触点的半导体器件的制造方法包括在第一和第二存储器件部件上沉积抗蚀剂的步骤，第一和第二部件中的每一个包括形成在衬底中的接合部以及在接合部之间形成在衬底上的栅极。然后将抗蚀剂从第二部件移除，从而在每个第二部件控制浇口和结上形成抗蚀剂开口。然后蚀刻抗蚀剂，从而暴露第一组分控制栅极中的每一个，而不暴露围绕第一组分控制栅极的衬底。然后在暴露的第一部件控制栅极和第二部件控制栅极和结上形成导电触点。

7. 发明授权

US09828941B2 Valved Stirling engine with improved efficiency 有权
公开(公告)号：US09828941B2
公开(公告)日：2017-11-28
申请号：US14800917
申请日：2015-07-16
申请人： Kevin Song
发明人： Kevin Song
IPC分类号： F02G1/057 , F02G1/053 , F02G1/044 , F02G1/045 , F02G1/055
CPC分类号： F02G1/057 , F02G1/044 , F02G1/045 , F02G1/053 , F02G1/055 , F02G2243/00 , F02G2243/02 , F02G2243/08 , F02G2243/30 , F02G2255/00 , F02G2256/00 , F02G2257/00 , F02G2270/90
摘要： A Stirling engine can take advantage of adiabatic compression (which heats working gas leaving the cold cylinder) and adiabatic expansion (which cools working gas leaving the hot cylinder) to increase efficiency. In some implementations, partially-heated gas leaving the cold cylinder and partially-cooled gas leaving the hot cylinder can be routed directly to a regenerator using bypass paths that are opened using one-way valves. The resultant relatively reduced temperature difference across the regenerator, e.g., as compared to a typical Stirling engine, can reduce thermal loss and improve efficiency. In some implementations, the compression ratios of the Stirling engine can be adjusted such that the temperature of the adiabatic heated gas is the same or higher than the temperature of the adiabatic cooled temperatures, thus eliminating the need for a regenerator.

8. 发明申请

US20150101324A1 Valved Stirling Engine with Improved Efficiency 有权
标题翻译：提高效率的斯特林发动机
公开(公告)号：US20150101324A1
公开(公告)日：2015-04-16
申请号：US14054522
申请日：2013-10-15
申请人： Kevin Song
发明人： Kevin Song
IPC分类号： F02G1/044
CPC分类号： F02G1/057 , F02G1/044 , F02G1/045 , F02G1/053 , F02G1/055 , F02G2243/00 , F02G2243/02 , F02G2243/08 , F02G2243/30 , F02G2255/00 , F02G2256/00 , F02G2257/00 , F02G2270/90
摘要： A Stirling engine can take advantage of adiabatic compression (which heats working gas leaving the cold cylinder) and adiabatic expansion (which cools working gas leaving the hot cylinder) to increase efficiency. In some implementations, partially-heated gas leaving the cold cylinder and partially-cooled gas leaving the hot cylinder can be routed directly to a regenerator using bypass paths that are opened using one-way valves. The resultant relatively reduced temperature difference across the regenerator, e.g., as compared to a typical Stirling engine, can reduce thermal loss and improve efficiency. In some implementations, the compression ratios of the Stirling engine can be adjusted such that the temperature of the adiabatic heated gas is the same or higher than the temperature of the adiabatic cooled temperatures, thus eliminating the need for a regenerator.
摘要翻译：斯特林发动机可以利用绝热压缩（加热离开冷缸的工作气体）和绝热膨胀（其冷却离开热气瓶的工作气体），以提高效率。在一些实施方案中，离开冷缸的部分加热的气体和离开热气瓶的部分冷却的气体可以使用使用单向阀打开的旁路路径直接路由到再生器。与典型的斯特林发动机相比，例如与典型的斯特林发动机相比，所述再生器所产生的相对降低的温度差可以减少热损失并提高效率。在一些实施方案中，可以调节斯特林发动机的压缩比，使得绝热加热气体的温度与绝热冷却温度的温度相同或更高，因此不再需要再生器。

9. 发明申请

US20130260657A1 Methods and Systems for Centrifugal Casting of Polymer Polish Pads and Polishing Pads Made by the Methods 审中-公开
标题翻译：聚合物抛光垫和抛光垫的离心铸造方法和系统由方法制成
公开(公告)号：US20130260657A1
公开(公告)日：2013-10-03
申请号：US13854856
申请日：2013-04-01
申请人： Thomas West , Peter McKeever , Kevin Song , Donald Dietz , Long Nguyen , Matt Richardson
发明人： Thomas West , Peter McKeever , Kevin Song , Donald Dietz , Long Nguyen , Matt Richardson
IPC分类号： B24B37/24 , B24B37/26
CPC分类号： B24B37/24 , B24B37/26 , B24D18/00
摘要： A method for making a polishing pad includes rotating a cylinder about a central axis. The cylinder encloses in an interior space a polymer precursor. The method also includes forming the polishing pad from at least some of a polymer formed after the polymer precursor has cured. The rotating of the cylinder may be continued until the polymer has cured. The method may include forming at least two distinct layers in the polishing pad by casting and curing sequentially at least two different polymer precursors. A system for manufacturing a polishing pad includes a centrifugal caster adapted to rotate. A polishing pad made by a method is provided.
摘要翻译：制造抛光垫的方法包括使圆筒围绕中心轴旋转。气缸在内部空间内包围聚合物前体。该方法还包括从聚合物前体固化后形成的聚合物中的至少一些形成抛光垫。圆筒的旋转可以继续，直到聚合物固化。该方法可以包括通过依次浇铸和固化至少两种不同的聚合物前体在抛光垫中形成至少两个不同的层。用于制造抛光垫的系统包括适于旋转的离心式脚轮。提供了一种通过一种方法制成的抛光垫。

10. 发明申请

US20090305012A1 Functional Optical Films with Nanostructures 审中-公开
标题翻译：具有纳米结构功能的光学膜
公开(公告)号：US20090305012A1
公开(公告)日：2009-12-10
申请号：US12135146
申请日：2008-06-07
申请人： Kevin Song
发明人： Kevin Song
IPC分类号： B32B7/02 , B32B9/04 , B32B5/16
CPC分类号： B32B27/08 , B32B7/02 , B32B27/18 , B32B2250/05 , B32B2250/24 , B32B2264/102 , B32B2264/108 , B32B2270/00 , B32B2307/202 , B32B2307/21 , B32B2307/40 , B32B2307/412 , B32B2307/718 , B32B2457/20 , B32B2551/00 , B32B2551/08 , Y10T428/24942 , Y10T428/256 , Y10T428/257 , Y10T428/31504
摘要： The present invention provides optical multilayer films comprising a plurality of first optical layers, each first optical layer containing a first functional additive; and a plurality of second optical layers, each second optical layer optionally containing a second functional additive. The optical multilayer films have both high functionality and high transparency.
摘要翻译：本发明提供了包括多个第一光学层的光学多层膜，每个第一光学层含有第一功能添加剂; 和多个第二光学层，每个第二光学层任选地含有第二功能添加剂。光学多层膜具有高功能性和高透明性。

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