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1. 发明授权

US08611046B2 PMR writer with graded side shield 有权
标题翻译： PMR作家与分级侧盾
公开(公告)号：US08611046B2
公开(公告)日：2013-12-17
申请号：US12799131
申请日：2010-04-19
申请人： Yan Wu , Zhigang Bai , Moris Dovek , Cherng-Chyi Han , Min Li , Jianing Zhou , Jiun-Ting Lee , Min Zheng
发明人： Yan Wu , Zhigang Bai , Moris Dovek , Cherng-Chyi Han , Min Li , Jianing Zhou , Jiun-Ting Lee , Min Zheng
IPC分类号： G11B5/11 , G11B5/23 , G11B5/31
CPC分类号： G11B5/105 , G11B5/1278 , G11B5/3116 , G11B5/315 , G11B5/3163
摘要： A perpendicular magnetic recording (PMR) head is fabricated with a pole tip shielded laterally by a graded side shield that is conformal to the shape of the pole tip at an upper portion of the shield but not conformal to the pole tip at a lower portion. The shield includes a trailing shield, that is conformal to the trailing edge of the pole tip and may include a leading edge shield that magnetically connects two bottom ends of the graded side shield.
摘要翻译：垂直磁记录（PMR）头被制造成具有通过分级侧屏蔽横向屏蔽的极尖，该平面侧屏蔽保护层在屏蔽的上部处与极尖的形状保持一致，但在下部不与极尖共形。屏蔽件包括后挡板，其与电极尖端的后缘保持一致，并且可以包括磁性连接分级侧屏蔽件的两个底端的前缘屏蔽件。

2. 发明申请

US20110255196A1 PMR writer with graded side shield 有权
标题翻译： PMR作家与分级侧盾
公开(公告)号：US20110255196A1
公开(公告)日：2011-10-20
申请号：US12799131
申请日：2010-04-19
申请人： Yan Wu , Zhigang Bai , Moris Dovek , Cherng-Chyi Han , Min Li , Jianing Zhou , Jiun-Ting Lee , Min Zheng
发明人： Yan Wu , Zhigang Bai , Moris Dovek , Cherng-Chyi Han , Min Li , Jianing Zhou , Jiun-Ting Lee , Min Zheng
IPC分类号： G11B5/10 , G11B21/16
CPC分类号： G11B5/105 , G11B5/1278 , G11B5/3116 , G11B5/315 , G11B5/3163
摘要： A perpendicular magnetic recording (PMR) head is fabricated with a pole tip shielded laterally by a graded side shield that is conformal to the shape of the pole tip at an upper portion of the shield but not conformal to the pole tip at a lower portion. The shield includes a trailing shield, that is conformal to the trailing edge of the pole tip and may include a leading edge shield that magnetically connects two bottom ends of the graded side shield.
摘要翻译：垂直磁记录（PMR）头被制造成具有通过分级侧屏蔽横向屏蔽的极尖，该平面侧屏蔽保护层在屏蔽的上部处与极尖的形状保持一致，但在下部不与极尖共形。屏蔽件包括后挡板，其与电极尖端的后缘保持一致，并且可以包括磁性连接分级侧屏蔽件的两个底端的前缘屏蔽件。

3. 发明申请

US20110146060A1 Method to make a perpendicular magnetic recording head with a side write shield 有权
标题翻译：制作具有侧面写入屏蔽层的垂直磁记录头的方法
公开(公告)号：US20110146060A1
公开(公告)日：2011-06-23
申请号：US12932552
申请日：2011-02-28
申请人： Cherng-Chyi Han , Min Li , Fenglin Liu , Jiun-Ting Lee
发明人： Cherng-Chyi Han , Min Li , Fenglin Liu , Jiun-Ting Lee
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , G11B5/11 , G11B5/1278 , G11B5/3116 , G11B5/3146 , G11B5/315 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A perpendicular magnetic recording (PMR) head is fabricated with a pole tip shielded laterally by a separated pair of side shields and shielded from above by an upper shield. The side shields are formed by a RIE process using specific gases applied to a shield layer through a masking layer formed of material that has a slower etch rate than the shield material. A masking layer of Ta, Ru/Ta, TaN or Ti, formed on a shield layer of NiFe and using RIE gases of CH3OH, CO or NH3 or their combinations, produces the desired result. The differential in etch rates maintains the opening dimension within the mask and allows the formation of a wedge-shaped trench within the shield layer that separates the layer into two shields. The pole tip is then plated within the trench and, being aligned by the trench, acquires the wedge-shaped cross-section of the trench. An upper shield is then formed above the side shields and pole.
摘要翻译：垂直磁记录（PMR）头被制造成具有通过分离的一对侧屏蔽横向屏蔽的极尖并且被上屏蔽从上面屏蔽。侧面屏蔽是通过RIE工艺形成的，其使用通过掩模层施加到屏蔽层上的特定气体，该屏蔽层由具有比屏蔽材料更慢的蚀刻速率的材料形成。形成在NiFe的屏蔽层上并使用CH 3 OH，CO或NH 3的RIE气体或其组合的Ta，Ru / Ta，TaN或Ti的掩蔽层产生期望的结果。蚀刻速率的差异保持了掩模内的开口尺寸，并且允许在屏蔽层内形成将该层分成两个屏蔽层的楔形沟槽。然后将磁极尖端电镀在沟槽内，并且通过沟槽对准，获得沟槽的楔形横截面。然后在侧屏和极上方形成上屏蔽。

4. 发明申请

US20070177301A1 Method to make a perpendicular magnetic recording head with a side write shield 有权
标题翻译：制作具有侧面写入屏蔽层的垂直磁记录头的方法
公开(公告)号：US20070177301A1
公开(公告)日：2007-08-02
申请号：US11345892
申请日：2006-02-02
申请人： Cherng-Chyi Han , Min Li , Fenglin Liu , Jiun-Ting Lee
发明人： Cherng-Chyi Han , Min Li , Fenglin Liu , Jiun-Ting Lee
IPC分类号： G11B5/147
CPC分类号： G11B5/3163 , G11B5/11 , G11B5/1278 , G11B5/3116 , G11B5/3146 , G11B5/315 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A perpendicular magnetic recording (PMR) head is fabricated with a pole tip shielded laterally by a separated pair of side shields and shielded from above by an upper shield. The side shields are formed by a RIE process using specific gases applied to a shield layer through a masking layer formed of material that has a slower etch rate than the shield material. A masking layer of Ta, Ru/Ta, TaN or Ti, formed on a shield layer of NiFe and using RIE gases of CH3OH, CO or NH3 or their combinations, produces the desired result. The differential in etch rates maintains the opening dimension within the mask and allows the formation of a wedge-shaped trench within the shield layer that separates the layer into two shields. The pole tip is then plated within the trench and, being aligned by the trench, acquires the wedge-shaped cross-section of the trench. An upper shield is then formed above the side shields and pole.
摘要翻译：垂直磁记录（PMR）头被制造成具有通过分离的一对侧屏蔽横向屏蔽的极尖并且被上屏蔽从上面屏蔽。侧面屏蔽是通过RIE工艺形成的，其使用通过掩模层施加到屏蔽层上的特定气体，该屏蔽层由具有比屏蔽材料更慢的蚀刻速率的材料形成。在NiFe的屏蔽层上形成的Ta，Ru / Ta，TaN或Ti的掩蔽层，并使用CH 3 3 OH，CO或NH 3的RIE气体或它们的组合，产生所需的结果。蚀刻速率的差异保持了掩模内的开口尺寸，并且允许在屏蔽层内形成将该层分成两个屏蔽层的楔形沟槽。然后将磁极尖端电镀在沟槽内，并且通过沟槽对准，获得沟槽的楔形横截面。然后在侧屏和极上方形成上屏蔽。

5. 发明授权

US07898773B2 Perpendicular magnetic recording head with a side write shield 有权
标题翻译：垂直磁记录头带有侧写屏蔽
公开(公告)号：US07898773B2
公开(公告)日：2011-03-01
申请号：US11345892
申请日：2006-02-02
申请人： Cherng-Chyi Han , Min Li , Fenglin Liu , Jiun-Ting Lee
发明人： Cherng-Chyi Han , Min Li , Fenglin Liu , Jiun-Ting Lee
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , G11B5/11 , G11B5/1278 , G11B5/3116 , G11B5/3146 , G11B5/315 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A perpendicular magnetic recording (PMR) head is fabricated with a pole tip shielded laterally by a separated pair of side shields and shielded from above by an upper shield. The side shields are formed by a RIE process using specific gases applied to a shield layer through a masking layer formed of material that has a slower etch rate than the shield material. A masking layer of Ta, Ru/Ta, TaN or Ti, formed on a shield layer of NiFe and using RIE gases of CH3OH, CO or NH3 or their combinations, produces the desired result. The differential in etch rates maintains the opening dimension within the mask and allows the formation of a wedge-shaped trench within the shield layer that separates the layer into two shields. The pole tip is then plated within the trench and, being aligned by the trench, acquires the wedge-shaped cross-section of the trench. An upper shield is then formed above the side shields and pole.
摘要翻译：垂直磁记录（PMR）头被制造成具有通过分离的一对侧屏蔽横向屏蔽的极尖并且被上屏蔽从上面屏蔽。侧面屏蔽是通过RIE工艺形成的，其使用通过掩模层施加到屏蔽层上的特定气体，该屏蔽层由具有比屏蔽材料更慢的蚀刻速率的材料形成。形成在NiFe的屏蔽层上并使用CH 3 OH，CO或NH 3的RIE气体或其组合的Ta，Ru / Ta，TaN或Ti的掩蔽层产生期望的结果。蚀刻速率的差异保持了掩模内的开口尺寸，并且允许在屏蔽层内形成将该层分成两个屏蔽层的楔形沟槽。然后将磁极尖端电镀在沟槽内，并且通过沟槽对准，获得沟槽的楔形横截面。然后在侧屏和极上方形成上屏蔽。

6. 发明授权

US08117738B2 Method to make a perpendicular magnetic recording head with a side write shield 有权
标题翻译：制作具有侧面写入屏蔽层的垂直磁记录头的方法
公开(公告)号：US08117738B2
公开(公告)日：2012-02-21
申请号：US12932552
申请日：2011-02-28
申请人： Cherng-Chyi Han , Min Li , Fenglin Liu , Jiun-Ting Lee
发明人： Cherng-Chyi Han , Min Li , Fenglin Liu , Jiun-Ting Lee
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3163 , G11B5/11 , G11B5/1278 , G11B5/3116 , G11B5/3146 , G11B5/315 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A perpendicular magnetic recording (PMR) head is fabricated with a self-aligned pole tip shielded laterally by a separated pair of side shields and shielded from above by an upper shield. The side shields are formed from a shield layer by a RIE process characterized by a mask and gases producing a variety of etch rates. The differential in etch rates maintains the opening dimension within the mask and allows the formation of a wedge-shaped trench within the shield layer that then separates the layer into two shields. The pole tip is then plated within the trench and an upper shield is formed above the side shields and pole.
摘要翻译：制造垂直磁记录（PMR）头，其具有由对准的一对侧屏蔽侧向屏蔽的自对准极尖，并由上屏蔽从上面屏蔽。侧屏蔽是通过RIE工艺由屏蔽层形成的，其特征在于产生各种蚀刻速率的掩模和气体。蚀刻速率的差异保持了掩模内的开口尺寸，并且允许在屏蔽层内形成楔形沟槽，然后将该层分成两个屏蔽层。然后将磁极尖端电镀在沟槽内，并且在侧屏蔽和极上方形成上屏蔽。

7. 发明授权

US08728333B2 Method to fabricate small dimension devices for magnetic recording applications 有权
标题翻译：制造用于磁记录应用的小尺寸装置的方法
公开(公告)号：US08728333B2
公开(公告)日：2014-05-20
申请号：US12658662
申请日：2010-02-12
申请人： Hui-Chuan Wang , Tong Zhao , Min Zheng , Minghui Yu , Min Li , Cherng Chyi Han
发明人： Hui-Chuan Wang , Tong Zhao , Min Zheng , Minghui Yu , Min Li , Cherng Chyi Han
IPC分类号： B44C1/22 , B82Y25/00 , G11B5/31 , G01R33/09 , H01F41/30
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3163 , G11B5/398 , H01F10/3254 , H01F10/3259 , H01F41/308 , H01L43/12 , Y10T29/49021
摘要： A three step ion beam etch (IBE) sequence involving low energy (
摘要翻译：公开了涉及低能量（<300eV）的三步离子束蚀刻（IBE）序列，用于将传感器临界尺寸（自由层宽度= FLW）修整到小于50nm。第一个IBE步骤相对于传感器侧壁具有陡峭的入射角，占FLW降低的60％至90％。第二IBE步骤具有浅入射角和扫动运动，以从第一IBE步骤去除残留物并进一步修整侧壁。第三IBE步骤具有陡峭的入射角度，以从第二步骤去除损坏的侧壁部分，占FLW减少量的10％至40％。结果，FLW接近30nm，同时保持60％以上的高MR比和1.2ohm-μm2的低RA。通过改变一个或多个离子束入射角来操纵侧壁角。

8. 发明授权

US07773341B2 Laminated film for head applications 有权
标题翻译：用于头部应用的层压膜
公开(公告)号：US07773341B2
公开(公告)日：2010-08-10
申请号：US11825034
申请日：2007-07-03
申请人： Kunliang Zhang , Min Zheng , Min Li , Chen-Jung Chien , Cherng-Chyi Han
发明人： Kunliang Zhang , Min Zheng , Min Li , Chen-Jung Chien , Cherng-Chyi Han
IPC分类号： G11B5/33
CPC分类号： G11B5/3116 , G11B5/1278
摘要： A laminated main pole layer is disclosed in which a non-AFC scheme is used to break the magnetic coupling between adjacent high moment layers and reduce remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. An amorphous material layer with a thickness of 3 to 20 Angstroms and made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, or Si is inserted between adjacent high moment stacks. The laminated structure also includes an alignment layer below each high moment layer within each stack. In one embodiment, a Ru coupling layer is inserted between two high moment layers in each stack to introduce an AFC scheme. An uppermost Ru layer is used as a CMP stop layer. A post annealing process may be employed to further reduce the anisotropy field (Hk).
摘要翻译：公开了一种层叠主极层，其中使用非AFC方案来破坏相邻的高力矩层之间的磁耦合，并且在保持高磁矩的同时降低硬轴方向的剩磁，并实现Hch，Hce和 Hk。由Hf，Zr，Ta，Al，Mg，Zn或Si中的一种或多种的氧化物，氮化物或氧氮化物形成的厚度为3〜20埃的无定形材料层插入相邻的高强度叠层之间。层叠结构还包括在每个堆叠内的每个高力矩层下面的对准层。在一个实施例中，Ru耦合层插入每个堆叠中的两个高矩层之间以引入AFC方案。使用最上层的Ru层作为CMP停止层。可以采用后退火工艺来进一步降低各向异性场（Hk）。

9. 发明申请

US20090009907A1 Laminated film for head applications 有权
标题翻译：用于头部应用的层压膜
公开(公告)号：US20090009907A1
公开(公告)日：2009-01-08
申请号：US11825034
申请日：2007-07-03
申请人： Kunliang Zhang , Min Zheng , Min Li , Chen-Jung Chien , Cherng-Chyi Han
发明人： Kunliang Zhang , Min Zheng , Min Li , Chen-Jung Chien , Cherng-Chyi Han
IPC分类号： G11B5/127 , G11B5/147
CPC分类号： G11B5/3116 , G11B5/1278
摘要： A laminated main pole layer is disclosed in which a non-AFC scheme is used to break the magnetic coupling between adjacent high moment layers and reduce remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. An amorphous material layer with a thickness of 3 to 20 Angstroms and made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, or Si is inserted between adjacent high moment stacks. The laminated structure also includes an alignment layer below each high moment layer within each stack. In one embodiment, a Ru coupling layer is inserted between two high moment layers in each stack to introduce an AFC scheme. An uppermost Ru layer is used as a CMP stop layer. A post annealing process may be employed to further reduce the anisotropy field (Hk).
摘要翻译：公开了一种层叠主极层，其中使用非AFC方案来破坏相邻的高力矩层之间的磁耦合，并且在保持高磁矩的同时降低硬轴方向的剩磁，并实现Hch，Hce和 Hk。由Hf，Zr，Ta，Al，Mg，Zn或Si中的一种或多种的氧化物，氮化物或氧氮化物形成的厚度为3〜20埃的无定形材料层插入相邻的高强度叠层之间。层叠结构还包括在每个堆叠内的每个高力矩层下面的对准层。在一个实施例中，Ru耦合层插入每个堆叠中的两个高矩层之间以引入AFC方案。使用最上层的Ru层作为CMP停止层。可以采用后退火工艺来进一步降低各向异性场（Hk）。

10. 发明申请

US20110198314A1 Method to fabricate small dimension devices for magnetic recording applications 有权
标题翻译：制造用于磁记录应用的小尺寸装置的方法
公开(公告)号：US20110198314A1
公开(公告)日：2011-08-18
申请号：US12658662
申请日：2010-02-12
申请人： Hui-Chuan Wang , Tong Zhao , Min Zheng , Minghui Yu , Min Li , Cherng Chyi Han
发明人： Hui-Chuan Wang , Tong Zhao , Min Zheng , Minghui Yu , Min Li , Cherng Chyi Han
IPC分类号： B44C1/22
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3163 , G11B5/398 , H01F10/3254 , H01F10/3259 , H01F41/308 , H01L43/12 , Y10T29/49021
摘要： A three step ion beam etch (IBE) sequence involving low energy (
摘要翻译：公开了涉及低能量（<300eV）的三步离子束蚀刻（IBE）序列，用于将传感器临界尺寸（自由层宽度= FLW）修整到小于50nm。第一个IBE步骤相对于传感器侧壁具有陡峭的入射角，占FLW降低的60％至90％。第二IBE步骤具有浅入射角和扫动运动，以从第一IBE步骤去除残留物并进一步修整侧壁。第三IBE步骤具有陡峭的入射角度，以从第二步骤去除损坏的侧壁部分，占FLW减少量的10％至40％。结果，FLW接近30nm，同时保持60％以上的高MR比和1.2ohm-μm2的低RA。通过改变一个或多个离子束入射角来操纵侧壁角。

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