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1. 发明授权

US09437768B2 Photoelectric conversion device 有权
标题翻译：光电转换装置
公开(公告)号：US09437768B2
公开(公告)日：2016-09-06
申请号：US13615700
申请日：2012-09-14
申请人： Yoichiro Numasawa , Yasushi Maeda , Yoshikazu Hiura , Shunpei Yamazaki
发明人： Yoichiro Numasawa , Yasushi Maeda , Yoshikazu Hiura , Shunpei Yamazaki
IPC分类号： H01L31/044 , H01L31/072 , H01L31/0747 , H01L31/18 , H01L31/0312
CPC分类号： H01L31/072 , H01L31/0312 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A photoelectric conversion device with low resistance loss and high conversion efficiency is provided. The photoelectric conversion device includes a first silicon semiconductor layer and a second silicon semiconductor layer between a pair of electrodes. The first silicon semiconductor layer is provided over one surface of a crystalline silicon substrate having one conductivity type and has a conductivity type opposite to that of the crystalline silicon substrate, and the second silicon semiconductor layer is provided on the other surface of the crystalline silicon substrate and has a conductivity type which is the same as that of the crystalline silicon substrate. Further, the first silicon semiconductor layer and the second silicon semiconductor layer each have a carrier concentration varying in the film thickness direction.
摘要翻译：提供具有低电阻损耗和高转换效率的光电转换装置。光电转换装置包括在一对电极之间的第一硅半导体层和第二硅半导体层。第一硅半导体层设置在具有一种导电类型的结晶硅衬底的一个表面上，并且具有与晶体硅衬底相反的导电类型，并且第二硅半导体层设置在晶体硅衬底的另一个表面上并且具有与晶体硅衬底相同的导电类型。此外，第一硅半导体层和第二硅半导体层各自具有在膜厚度方向上变化的载流子浓度。

2. 发明申请

US20130082344A1 PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换器件
公开(公告)号：US20130082344A1
公开(公告)日：2013-04-04
申请号：US13615700
申请日：2012-09-14
申请人： Yoichiro Nuwasawa , Yasushi Maeda , Yoshikazu Hiura , Shunpei Yamazaki
发明人： Yoichiro Nuwasawa , Yasushi Maeda , Yoshikazu Hiura , Shunpei Yamazaki
IPC分类号： H01L31/0232
CPC分类号： H01L31/072 , H01L31/0312 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A photoelectric conversion device with low resistance loss and high conversion efficiency is provided. The photoelectric conversion device includes a first silicon semiconductor layer and a second silicon semiconductor layer between a pair of electrodes. The first silicon semiconductor layer is provided over one surface of a crystalline silicon substrate having one conductivity type and has a conductivity type opposite to that of the crystalline silicon substrate, and the second silicon semiconductor layer is provided on the other surface of the crystalline silicon substrate and has a conductivity type which is the same as that of the crystalline silicon substrate. Further, the first silicon semiconductor layer and the second silicon semiconductor layer each have a carrier concentration varying in the film thickness direction.
摘要翻译：提供具有低电阻损耗和高转换效率的光电转换装置。光电转换装置包括在一对电极之间的第一硅半导体层和第二硅半导体层。第一硅半导体层设置在具有一种导电类型的结晶硅衬底的一个表面上，并且具有与晶体硅衬底相反的导电类型，并且第二硅半导体层设置在晶体硅衬底的另一个表面上并且具有与晶体硅衬底相同的导电类型。此外，第一硅半导体层和第二硅半导体层各自具有在膜厚度方向上变化的载流子浓度。

3. 发明授权

US08207011B2 Method of manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US08207011B2
公开(公告)日：2012-06-26
申请号：US12860283
申请日：2010-08-20
申请人： Yoshikazu Hiura , Riho Kataishi , Shunpei Yamazaki
发明人： Yoshikazu Hiura , Riho Kataishi , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L31/1824 , C23C16/45557 , C23C16/45565 , C23C16/5096 , H01L21/02532 , H01L21/0262 , H01L31/03921 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/077 , Y02E10/545 , Y02P70/521
摘要： Provided is a technique for manufacturing a photoelectric conversion element using a dense crystalline semiconductor film without a cavity between crystal grains. A method of manufacturing a photoelectric conversion device having a first electrode, a unit cell, and a second electrode over a substrate includes the steps of: forming a plasma region between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a chamber of a plasma CVD apparatus is set to from 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to from 1 mm to 20 mm, preferably, 4 mm to 16 mm; forming deposition precursors including a crystalline semiconductor in a gas phase including the plasma region; forming a crystal nucleus having a grain size of from 5 nm to 15 nm by depositing the deposition precursors; and forming a semiconductor film having a first conductivity type, a semiconductor film effective in photoelectric conversion, or a semiconductor film having a first conductivity type in the unit cell, by growing a crystal from the crystal nucleus.
摘要翻译：本发明提供一种使用在晶粒之间没有空腔的致密结晶半导体膜的光电转换元件的制造技术。制造在基板上具有第一电极，单元电池和第二电极的光电转换装置的方法包括以下步骤：通过提供60MHz的高频功率在第一电极和第二电极之间形成等离子体区域等离子体CVD装置的室内的反应气体的压力设定为450Pa〜13332Pa，等离子体CVD装置的第一电极和第二电极之间的距离设定为第一电极设定为1mm至20mm，优选为4mm至16mm; 在包括所述等离子体区域的气相中形成包括结晶半导体的沉积前体; 通过沉积沉积前体形成晶粒尺寸为5nm至15nm的晶核; 以及通过从晶核生长晶体，形成具有第一导电类型的半导体膜，有效于光电转换的半导体膜或具有第一导电类型的半导体膜。

4. 发明授权

US10141120B2 Power storage system and manufacturing method thereof and secondary battery and capacitor 有权
公开(公告)号：US10141120B2
公开(公告)日：2018-11-27
申请号：US13033877
申请日：2011-02-24
申请人： Shunpei Yamazaki , Tamae Moriwaka , Kazutaka Kuriki , Mikio Yukawa
发明人： Shunpei Yamazaki , Tamae Moriwaka , Kazutaka Kuriki , Mikio Yukawa
IPC分类号： H01M6/04 , H01G11/26 , H01G11/46 , H01M4/131 , H01M4/134 , H01M4/1395 , H01M4/36 , H01M4/587 , H01M4/62 , H01M10/0525 , H01M10/0561 , H01G11/28 , H01G11/32 , H01M4/02
摘要： The present invention relates to a power storage system including a negative electrode which has a crystalline silicon film provided as a negative electrode active material on the surface of a current collector and contains a conductive oxide in a surface layer section of the crystalline silicon film. Alternatively, the present invention relates to a method for manufacturing a power storage system, which includes the step of forming an amorphous silicon film on a current collector, adding a catalytic element for promoting crystallization of the amorphous silicon, onto a surface of the amorphous silicon film, heating the amorphous silicon film with the catalytic element added to crystallize the amorphous silicon film and thereby form a crystalline silicon film, and using the crystalline silicon film as a negative electrode active material layer.

5. 发明授权

US09929350B2 Light-emitting device 有权
公开(公告)号：US09929350B2
公开(公告)日：2018-03-27
申请号：US13405627
申请日：2012-02-27
申请人： Shunpei Yamazaki , Satoshi Seo , Nobuharu Ohsawa , Satoko Shitagaki , Hideko Inoue , Hiroshi Kadoma , Harue Osaka , Kunihiko Suzuki , Yasuhiko Takemura
发明人： Shunpei Yamazaki , Satoshi Seo , Nobuharu Ohsawa , Satoko Shitagaki , Hideko Inoue , Hiroshi Kadoma , Harue Osaka , Kunihiko Suzuki , Yasuhiko Takemura
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/0059 , H01L51/0067 , H01L2251/5384 , H01L2251/552
摘要： A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.

6. 发明授权

US09887568B2 Moving object, wireless power feeding system, and wireless power feeding method 有权
公开(公告)号：US09887568B2
公开(公告)日：2018-02-06
申请号：US13023122
申请日：2011-02-08
申请人： Shunpei Yamazaki , Jun Koyama , Yutaka Shionoiri
发明人： Shunpei Yamazaki , Jun Koyama , Yutaka Shionoiri
IPC分类号： H02J7/00 , H02J7/14 , H02J17/00 , B60L11/00 , B60L11/18
CPC分类号： H02J7/0054 , B60L11/007 , B60L11/182 , B60L11/1833 , B60L2200/10 , B60L2200/12 , B60L2200/26 , H02J7/025 , H02J7/1407 , H02J17/00 , H02J50/10 , H02J50/12 , H02J50/20 , H02J50/40 , H02J50/90 , Y02T10/7005 , Y02T10/7072 , Y02T90/12 , Y02T90/121 , Y02T90/122 , Y02T90/125 , Y02T90/14
摘要： An object is to provide a moving object structure capable of reducing power loss caused when power is supplied from a power feeding device to a moving object by wireless communication. Another object is to provide a moving object structure capable of reducing the intensity of radio waves radiated to the surroundings. A moving object having a plurality of antennas receives radio waves transmitted from a power feeding device. At least one of the plurality of antennas is installed apart from the other antenna(s) of the moving object. Then, the radio waves transmitted from the power feeding device are received by all the plurality of antennas and converted into electric energy. Alternatively, the radio waves transmitted from the power feeding device are received by one or more selected from the plurality of antennas and converted into electric energy.

7. 发明授权

US09842859B2 Driver circuit and display device 有权
公开(公告)号：US09842859B2
公开(公告)日：2017-12-12
申请号：US12606340
申请日：2009-10-27
申请人： Jun Koyama , Shunpei Yamazaki
发明人： Jun Koyama , Shunpei Yamazaki
IPC分类号： G09G5/00 , H01L27/12
CPC分类号： H01L27/1225 , H01L27/1248
摘要： The driver circuit includes an inverter circuit having a first thin film transistor including a first oxide semiconductor film and a second transistor including a second oxide semiconductor film. The first thin film transistor and the second thin film transistor are enhancement transistors, in which a silicon oxide film including an OH group is provided on and in contact with the first oxide semiconductor film and the second oxide semiconductor film, and a silicon nitride film is provided on and in contact with the silicon oxide film.

8. 发明授权

US09781783B2 Light-emitting device, display device, light-emitting system, and display system 有权
公开(公告)号：US09781783B2
公开(公告)日：2017-10-03
申请号：US13442073
申请日：2012-04-09
申请人： Koichiro Kamata , Yutaka Shionoiri , Shunpei Yamazaki
发明人： Koichiro Kamata , Yutaka Shionoiri , Shunpei Yamazaki
IPC分类号： G06F3/038 , H05B33/08 , H01L27/32
CPC分类号： H05B33/0815 , H01L27/3244 , H01L2251/5361 , H05B33/0896
摘要： A highly reliable light-emitting device is provided. A lighting device or a display device with a high level of safety and without an exposed electrode is provided. A lighting device or a display device with high layout flexibility is provided. A light-emitting system or a display system to which the light-emitting device or the display device can be applied is provided. An electrode for receiving power and a rectifier circuit are provided in a light-emitting device including an organic EL element and arranged so as to face an electrode for transmitting power, whereby alternating-current power is supplied to the light-emitting device. The alternating-current power is rectified by the rectifier circuit to direct-current power so that the organic EL element in the light-emitting device is driven.

9. 发明授权

US09722212B2 Lighting device, light-emitting device, and manufacturing method and manufacturing apparatus thereof 有权
公开(公告)号：US09722212B2
公开(公告)日：2017-08-01
申请号：US13372087
申请日：2012-02-13
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L21/84 , H01L51/56 , H01L27/32
CPC分类号： H01L51/56 , H01L27/3246
摘要： The sizes of an evaporation mask used for a full-color light-emitting device and an evaporation mask used for a lighting device are different from each other. For this reason, separate evaporation masks are necessary, and in the case of processing a large number of substrates at once, many evaporation masks are prepared in accordance with the number of substrates to be processed, thereby increasing the total footprint of a manufacturing apparatus. One object of the present invention is to solve a problem of such an increase. A full-color display device can be manufactured by using a color filter and white light-emitting elements in combination. By this manner, a manufacturing line for the light-emitting device can have some steps in common with a manufacturing line for the lighting device; consequently, the total footprint of the manufacturing apparatus is reduced.

10. 发明授权

US09704446B2 Display device and driving method 有权
公开(公告)号：US09704446B2
公开(公告)日：2017-07-11
申请号：US13022879
申请日：2011-02-08
申请人： Shunpei Yamazaki , Jun Koyama
发明人： Shunpei Yamazaki , Jun Koyama
IPC分类号： G09G5/00 , G09G3/36
CPC分类号： G09G3/3614 , G09G3/3648 , G09G3/3655 , G09G3/3677 , G09G3/3688 , G09G2310/0297 , G09G2310/06 , G09G2310/08 , G09G2320/0214 , G09G2320/0247 , G09G2330/021 , G09G2330/023
摘要： An object is to reduce power consumption of a display device and to suppress deterioration of display quality. As a transistor provided for each pixel, a transistor including an oxide semiconductor layer is used. Note that off-state current of the transistor can be decreased when the oxide semiconductor layer is highly purified. Therefore, variation in the value of a data signal due to the off-state current of the transistor can be suppressed. That is, display deterioration (change) which occurs when writing frequency of the data signal to the pixel including the transistor is reduced (when a break period is lengthened) can be suppressed. In addition, flickers in display which generates when the frequency of an alternating-current driving signal supplied to a signal line in the break period is reduced can be suppressed.

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