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1. 发明申请

US20120104593A1 ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE 有权
标题翻译：电子设备及制造电子设备的方法
公开(公告)号：US20120104593A1
公开(公告)日：2012-05-03
申请号：US13286494
申请日：2011-11-01
申请人： Yoko KANEMOTO , Akira SATO , Shogo INABA
发明人： Yoko KANEMOTO , Akira SATO , Shogo INABA
IPC分类号： H01L23/06 , H01L21/52
CPC分类号： B81C1/00333 , B81C2203/0145
摘要： An electronic device according to the invention includes: a substrate; an MEMS structure formed above the substrate; and a covering structure defining a cavity in which the MEMS structure is arranged, wherein the covering structure has a first covering layer covering from above the cavity and having a through-hole in communication with the cavity and a second covering layer formed above the first covering layer and closing the through-hole, the first covering layer has a first region located above at least the MEMS structure and a second region located around the first region, the first covering layer is thinner in the first region than in the second region, and a distance between the substrate and the first covering layer in the first region is longer than a distance between the substrate and the first covering layer in the second region.
摘要翻译：根据本发明的电子设备包括：基板; 在衬底上形成的MEMS结构; 以及限定了其中布置有MEMS结构的空腔的覆盖结构，其中所述覆盖结构具有从所述空腔上方覆盖并具有与所述空腔连通的通孔的第一覆盖层和形成在所述第一覆盖物上方的第二覆盖层并且关闭所述通孔，所述第一覆盖层具有位于至少所述MEMS结构之上的第一区域和位于所述第一区域周围的第二区域，所述第一覆盖层在所述第一区域中比在所述第二区域中更薄，以及第一区域中的基板和第一覆盖层之间的距离比第二区域中的基板和第一覆盖层之间的距离长。

2. 发明申请

US20120127683A1 ELECTRONIC DEVICE, RESONATOR, OSCILLATOR AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE 审中-公开
标题翻译：电子设备，谐振器，振荡器和制造电子器件的方法
公开(公告)号：US20120127683A1
公开(公告)日：2012-05-24
申请号：US13359965
申请日：2012-01-27
申请人： Shogo INABA , Akira SATO
发明人： Shogo INABA , Akira SATO
IPC分类号： H05K7/06
CPC分类号： B81B3/0075 , H01L24/05 , H01L2224/05554 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15788 , H01L2924/00
摘要： An electronic device includes a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the functional structural body disposed therein, wherein the covering structure is provided with a side wall provided on the substrate and comprising an interlayer insulating layer surrounding the cavity part and a wiring layer; a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.
摘要翻译：电子设备包括基板，形成在基板上的功能结构体和用于限定具有设置在其中的功能结构体的空腔部分的覆盖结构，其中覆盖结构设置有设置在基板上的侧壁，围绕空腔部分的绝缘层和布线层; 覆盖所述空腔部的上部的第一覆盖层，具有穿过所述空腔部的开口，由包含耐腐蚀层的层叠结构构成的第一覆盖层; 以及用于封闭开口的第二覆盖层。

3. 发明申请

US20080035458A1 MEMS SWITCH AND MANUFACTURING METHOD THEREOF 有权
标题翻译： MEMS开关及制造方法
公开(公告)号：US20080035458A1
公开(公告)日：2008-02-14
申请号：US11832038
申请日：2007-08-01
申请人： Toru WATANABE , Akira SATO , Shogo INABA , Takeshi MORI
发明人： Toru WATANABE , Akira SATO , Shogo INABA , Takeshi MORI
IPC分类号： H01H57/00 , H01H11/00
CPC分类号： H01H59/0009 , H01C10/50 , Y10T29/49105
摘要： A micro-electro mechanical system (MEMS) switch includes a fixed electrode formed on a substrate, and a movable electric resistor formed on the substrate, the movable electric resistor serving as an electric resistor that divides an electric potential where the MEMS switch is set to a conduction state.
摘要翻译：微机电系统（MEMS）开关包括形成在基板上的固定电极和形成在基板上的可移动电阻器，可移动电阻器用作将MEMS开关设置为的电位分开的电阻器导通状态。

4. 发明申请

US20110254110A1 MEMS DEVICE HAVING A MOVABLE ELECTRODE 有权
标题翻译：具有可移动电极的MEMS器件
公开(公告)号：US20110254110A1
公开(公告)日：2011-10-20
申请号：US13170628
申请日：2011-06-28
申请人： Toru WATANABE , Akira SATO , Shogo INABA , Takeshi MORI
发明人： Toru WATANABE , Akira SATO , Shogo INABA , Takeshi MORI
IPC分类号： H01L29/84
CPC分类号： B81B3/0086 , B81B2201/0271
摘要： A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.
摘要翻译：微机电系统（MEMS）器件包括半导体衬底，包括固定电极的MEMS和通过绝缘层形成在半导体衬底上的可移动电极，以及形成在固定电极下方的半导体衬底中的阱。井是n型井和p型井之一。 p型阱对固定电极施加正电压，而n型阱对固定电极施加负电压。

5. 发明申请

US20080105951A1 Electronic Device and Method for Manufacturing Thereof 有权
标题翻译：电子设备及其制造方法
公开(公告)号：US20080105951A1
公开(公告)日：2008-05-08
申请号：US11875383
申请日：2007-10-19
申请人： Akira SATO , Toru WATANABE , Shogo INABA , Takeshi MORI
发明人： Akira SATO , Toru WATANABE , Shogo INABA , Takeshi MORI
IPC分类号： H01L29/06 , H01L21/30
CPC分类号： B81C1/00246 , B81B2207/015 , B81B2207/07 , B81C2203/0136 , B81C2203/0714 , B81C2203/0735 , H01L21/7682 , H01L24/05 , H01L2924/14 , H01L2924/00
摘要： An electronic device, including a substrate, a functional structure constituting a functional element formed on the substrate, and a cover structure forming a cavity portion in which the functional structure is disposed, is disclosed. In the electronic device, the cover structure includes a laminated structure of an interlayer insulating film and a wiring layer, the laminated structure being formed on the substrate in such a way that it surrounds the cavity portion, and the cover structure has an upside cover portion covering the cavity portion from above, the upside cover portion being formed with part of the wiring layer that is disposed above the functional structure.
摘要翻译：公开了一种电子设备，包括基板，构成在基板上形成的功能元件的功能结构，以及形成其中设置有功能结构的空腔部分的盖结构。在电子设备中，盖结构包括层间绝缘膜和布线层的叠层结构，层叠结构以包围空腔部分的方式形成在基板上，并且盖结构具有上侧盖部分从上方覆盖空腔部分，上侧盖部分形成有设置在功能结构上方的布线层的一部分。

6. 发明申请

US20120104519A1 MEMS DEVICE HAVING A MOVABLE ELECTRODE 有权
标题翻译：具有可移动电极的MEMS器件
公开(公告)号：US20120104519A1
公开(公告)日：2012-05-03
申请号：US13344964
申请日：2012-01-06
申请人： Toru WATANABE , Akira SATO , Shogo INABA , Takeshi MORI
发明人： Toru WATANABE , Akira SATO , Shogo INABA , Takeshi MORI
IPC分类号： H01L29/84
CPC分类号： B81B3/0086 , B81B2201/0271
摘要： A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.
摘要翻译：微机电系统（MEMS）器件包括半导体衬底，包括固定电极的MEMS和通过绝缘层形成在半导体衬底上的可移动电极，以及形成在固定电极下方的半导体衬底中的阱。井是n型井和p型井之一。 p型阱对固定电极施加正电压，而n型阱对固定电极施加负电压。

7. 发明申请

US20080142912A1 MEMS RESONATOR AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译： MEMS谐振器及其制造方法
公开(公告)号：US20080142912A1
公开(公告)日：2008-06-19
申请号：US11928519
申请日：2007-10-30
申请人： Shogo INABA , Akira SATO , Toru WATANABE , Takeshi MORI
发明人： Shogo INABA , Akira SATO , Toru WATANABE , Takeshi MORI
IPC分类号： H03H9/02 , H01L21/8228
CPC分类号： H03H3/0073 , H03H9/1057 , Y10S977/721
摘要： A method is for manufacturing a microeletromechanical system resonator having a semiconductor device and a microelectromechanical system structure unit formed on a substrate. The method includes: forming a lower electrode of an oxide-nitride-oxide capacitor unit included in the semiconductor device using a first silicon layer; forming, using a second silicon layer, a substructure of the microelectromechanical system structure unit and an upper electrode of the oxide-nitride-oxide capacitor unit included in the semiconductor device; and forming, using a third silicon layer, a superstructure of the microelectromechanical system structure unit and a gate electrode of a complementary metal oxide semiconductor circuit unit included in the semiconductor device.
摘要翻译：一种用于制造具有半导体器件和形成在衬底上的微机电系统结构单元的微机械系统谐振器的方法。该方法包括：使用第一硅层形成包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的下电极; 使用第二硅层形成微机电系统结构单元的子结构和包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的上电极; 以及使用第三硅层形成所述微机电系统结构单元的上部结构和包括在所述半导体器件中的互补金属氧化物半导体电路单元的栅电极。

8. 发明申请

US20100148284A1 MEMS DEVICE HAVING A MOVABLE ELECTRODE 有权
标题翻译：具有可移动电极的MEMS器件
公开(公告)号：US20100148284A1
公开(公告)日：2010-06-17
申请号：US12710773
申请日：2010-02-23
申请人： Toru WATANABE , Akira SATO , Shogo INABA , Takeshi MORI
发明人： Toru WATANABE , Akira SATO , Shogo INABA , Takeshi MORI
IPC分类号： H01L29/84
CPC分类号： B81B3/0086 , B81B2201/0271
摘要： A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.
摘要翻译：微机电系统（MEMS）器件包括半导体衬底，包括固定电极的MEMS和通过绝缘层形成在半导体衬底上的可移动电极，以及形成在固定电极下方的半导体衬底中的阱。井是n型井和p型井之一。 p型阱对固定电极施加正电压，而n型阱对固定电极施加负电压。

9. 发明申请

US20090302707A1 MICRO-ELECTRO-MECHANICAL-SYSTEM (MEMS) RESONATOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：微电子机械系统（MEMS）谐振器及其制造方法
公开(公告)号：US20090302707A1
公开(公告)日：2009-12-10
申请号：US12534468
申请日：2009-08-03
申请人： Shogo INABA , Akira SATO
发明人： Shogo INABA , Akira SATO
IPC分类号： H02N11/00
CPC分类号： H03H9/2457 , H03H3/0072 , H03H9/02433 , H03H2009/02511
摘要： A micro-electro-mechanical-system resonator, includes: a substrate; a fixed electrode formed on the substrate; and a movable electrode, arranged facing the fixed electrode and driven by an electrostatic attracting force or an electrostatic repulsion force that acts on a gap between the fixed electrode and the movable electrode. An internal surface of a support beam of the movable electrode facing the fixed electrode has an inclined surface.
摘要翻译：一种微电子机械系统谐振器，包括：基板; 形成在基板上的固定电极; 以及可动电极，其布置成面对固定电极并且通过作用在固定电极和可动电极之间的间隙的静电吸引力或静电排斥力驱动。面对固定电极的可动电极的支撑梁的内表面具有倾斜表面。

10. 发明申请

US20080224241A1 ELECTRONIC DEVICE, RESONATOR, OSCILLATOR AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE 有权
标题翻译：电子设备，谐振器，振荡器和制造电子器件的方法
公开(公告)号：US20080224241A1
公开(公告)日：2008-09-18
申请号：US12045990
申请日：2008-03-11
申请人： Shogo INABA , Akira SATO
发明人： Shogo INABA , Akira SATO
IPC分类号： H01L29/84 , H01L21/00
CPC分类号： B81B3/0075 , H01L24/05 , H01L2224/05554 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15788 , H01L2924/00
摘要： An electronic device includes a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the functional structural body disposed therein, wherein the covering structure is provided with a side wall provided on the substrate and comprising an interlayer insulating layer surrounding the cavity part and a wiring layer; a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.
摘要翻译：电子设备包括基板，形成在基板上的功能结构体和用于限定具有设置在其中的功能结构体的空腔部分的覆盖结构，其中覆盖结构设置有设置在基板上的侧壁，围绕空腔部分的绝缘层和布线层; 覆盖所述空腔部的上部的第一覆盖层，具有穿过所述空腔部的开口，由包含耐腐蚀层的层叠结构构成的第一覆盖层; 以及用于封闭开口的第二覆盖层。

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