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1. 发明授权

US07687784B2 Method and device of ion source generation 有权
标题翻译：离子源生成方法和装置
公开(公告)号：US07687784B2
公开(公告)日：2010-03-30
申请号：US12126312
申请日：2008-05-23
申请人： Nai-Yuan Cheng , Yun-Ju Yang , Cheng-Hui Shen , Junhua Hong , Jiong Chen , Tienyu Sheng , Linuan Chen
发明人： Nai-Yuan Cheng , Yun-Ju Yang , Cheng-Hui Shen , Junhua Hong , Jiong Chen , Tienyu Sheng , Linuan Chen
IPC分类号： H01J7/24 , H01J27/02 , H01J49/10
CPC分类号： H01J37/08 , H01J27/02 , H01J37/3171 , H01J2237/002 , H01J2237/08 , H01J2237/24585
摘要： An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.
摘要翻译：注入机配备有离子束电流检测器，温度传感器，温度控制器和冷却系统，以增加注入机的离子源室中的特定离子簇的比例。因此，浅离子注入的植入效率因此增加。

2. 发明授权

US11430589B2 Hybrid magnet structure 有权
公开(公告)号：US11430589B2
公开(公告)日：2022-08-30
申请号：US17350484
申请日：2021-06-17
申请人： Advanced Ion Beam Technology, Inc.
发明人： Ching-Shiang Hwang , Jyh-Chyuan Jan , Hui-Huang Chen , Yun-Liang Chu
IPC分类号： H01F7/02
摘要： The disclosure provides a hybrid magnet structure which includes two dipole magnets assemblies arranged oppositely, and each dipole magnet assembly includes a permanent magnet, two iron cores, and a moveable magnetic field shunt element. The hybrid magnet structure is adapted to focus particle beams of different positions by applying an adjustable gradient magnetic field in the horizontal or vertical direction of the particle beam. By passing the charged particle beams through the gradient magnetic field established between the two dipole magnets, the aspect of focusing the charged particle beam is achieved. In addition, the intensity of the gradient magnetic field can be altered by adjusting the gap between the movable magnetic field shunt element and the permanent magnet, thereby controlling the particle beam size on a specific axis for different energies or masses of the charge particles.

3. 发明授权

US09697988B2 Ion implantation system and process 有权
公开(公告)号：US09697988B2
公开(公告)日：2017-07-04
申请号：US14883538
申请日：2015-10-14
申请人： Advanced Ion Beam Technology, Inc.
发明人： Zhimin Wan , Kourosh Saadatmand , Nicholas White
IPC分类号： H01J37/00 , H01J37/30
CPC分类号： H01J37/3007 , H01J37/1471 , H01J37/3171 , H01J2237/04735 , H01J2237/04756 , H01J2237/04924
摘要： Ion implantation systems and processes are disclosed. An exemplary ion implantation system may include an ion source, an extraction manipulator, a magnetic analyzer, and an electrode assembly. The extraction manipulator may be configured to generate an ion beam by extracting ions from the ion source. A cross-section of the generated ion beam may have a long dimension and a short dimension orthogonal to the long dimension of the ion beam. The magnetic analyzer may be configured to focus the ion beam in an x-direction parallel to the short dimension of the ion beam. The electrode assembly may be configured to accelerate or decelerate the ion beam. One or more entrance electrodes of the electrode assembly may define a first opening and the electrode assembly may be positioned relative to the magnetic analyzer such that the ion beam converges in the x-direction as the ion beam enters through the first opening.

4. 发明授权

US09368326B2 Scan head and scan arm using the same 有权
标题翻译：扫描头和扫描臂使用相同的
公开(公告)号：US09368326B2
公开(公告)日：2016-06-14
申请号：US13919651
申请日：2013-06-17
申请人： ADVANCED ION BEAM TECHNOLOGY, INC.
发明人： Richard F. McRay
IPC分类号： G01N23/00 , H01J37/317 , H01J37/20
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/20207 , H01J2237/20228 , H01J2237/20285
摘要： A scan head assembled to a scan arm for an ion implanter and a scan arm using the same are provided, wherein the scan head comprises a case, a shaft assembly, an ESC, a first driving mechanism and a second driving mechanism. The case has a normal center line. The shaft assembly passes through a first side of the case and has a twist axis, a first pivot point fixed relative to the case and a first end located outside the case. The ESC is fastened on the first end and capable of holding a work piece. The first driving mechanism is capable of driving the shaft assembly, the ESC and the work piece to tilt relative to the normal center line. The second driving mechanism is capable of driving the shaft assembly, the ESC and the work piece to rotate about the twist axis.
摘要翻译：提供了组装到用于离子注入机的扫描臂和使用其的扫描臂的扫描头，其中扫描头包括壳体，轴组件，ESC，第一驱动机构和第二驱动机构。案件有正常的中心线。轴组件穿过壳体的第一侧并且具有扭转轴线，相对于壳体固定的第一枢转点和位于壳体外部的第一端部。 ESC紧固在第一端并能够固定工件。第一驱动机构能够驱动轴组件，ESC和工件相对于正常中心线倾斜。第二驱动机构能够驱动轴组件，ESC和工件围绕扭转轴线旋转。

5. 发明授权

US08941077B2 Deceleration apparatus for ribbon and spot beams 有权
标题翻译：带和点光束减速装置
公开(公告)号：US08941077B2
公开(公告)日：2015-01-27
申请号：US13280162
申请日：2011-10-24
申请人： Nicholas White , Zhimin Wan , Erik Collart
发明人： Nicholas White , Zhimin Wan , Erik Collart
IPC分类号： H01J1/88 , H01J3/26 , H01J3/04 , H01J37/317
CPC分类号： H01J37/05 , H01J3/04 , H01J3/26 , H01J37/1472 , H01J37/3007 , H01J37/3171 , H01J2237/04756 , H01J2237/053 , H01J2237/057 , H01J2237/151 , H01J2237/303 , H01J2237/31701
摘要： A deceleration apparatus capable of decelerating a short spot beam or a tall ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.
摘要翻译：公开了一种减速装置，能够使短点光束或高色带光束减速。在任一种情况下，都会控制趋向于降低光束轮廓形状的效果。提供了用于将离子束屏蔽到外部电位的盖子。其位置和电位可调的电极设置在梁的相对两侧，以确保减速和偏转电场的形状不会显着偏离最佳形状，即使存在显着的空间电荷高目前低能量的重离子束。

6. 发明授权

US08895944B2 Scan head and scan arm using the same 有权
标题翻译：扫描头和扫描臂使用相同的
公开(公告)号：US08895944B2
公开(公告)日：2014-11-25
申请号：US13745426
申请日：2013-01-18
申请人： Advanced Ion Beam Technology, Inc.
发明人： Richard F. McRay
IPC分类号： H01J37/317 , H01J37/20 , H01L21/683 , H01L21/687
CPC分类号： H01L21/6831 , H01L21/68764 , Y10T279/23
摘要： A scan head assembled to a scan arm for an ion implanter and a scan arm using the same are provided, wherein the scan head is capable of micro tilting a work piece and comprises a case, a shaft assembly, an electrostatic chuck, a first driving mechanism and a micro-tilt mechanism. The shaft assembly passes through a first side of the case and has a twist axis. The electrostatic chuck is fastened on a first end of the shaft assembly outside the case for holding the work piece. The first driving mechanism is disposed within the case and capable of driving the shaft assembly and the ESC to rotate about the twist axis. The micro-tilt mechanism is disposed within the case and capable of driving the shaft assembly and the ESC to tilt relative to the case.
摘要翻译：提供了组装到用于离子注入机的扫描臂和使用其的扫描臂的扫描头，其中扫描头能够微型倾斜工件，并且包括壳体，轴组件，静电卡盘，第一驱动机构和微倾斜机制。轴组件穿过壳体的第一侧并且具有扭转轴线。静电卡盘被紧固在轴组件的外部的第一端上，用于保持工件。第一驱动机构设置在壳体内并且能够驱动轴组件和ESC围绕扭转轴线旋转。微倾斜机构设置在壳体内并且能够驱动轴组件和ESC相对于壳体倾斜。

7. 发明授权

US08835882B2 Real time monitoring ion beam 有权
标题翻译：实时监测离子束
公开(公告)号：US08835882B2
公开(公告)日：2014-09-16
申请号：US13608941
申请日：2012-09-10
申请人： Wei-Cheng Lin , Zhimin Wan
发明人： Wei-Cheng Lin , Zhimin Wan
IPC分类号： G21K5/04 , H01J37/304 , H01J37/244 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/244 , H01J37/304 , H01J2237/24507 , H01J2237/24528 , H01J2237/30472
摘要： The invention provides a method to real time monitor the ion beam. Initially, turn on an ion implanter which has a wafer holder, a Faraday cup and a measurement device positioned close to a special portion of a pre-determined ion beam path of the ion beam, wherein the Faraday cup is positioned downstream the wafer holder and the measurement device is positioned upstream the wafer holder. Then, measure a first ion beam current received by the Faraday cup and a second ion beam current received by the measurement device. By continuously measuring the first and second ion beam current, the ion beam is real-time monitored even the Faraday cup is at least partially blocked during the period of moving the wafer holder across the ion beam. Accordingly, the on-going implantation process and the operation of the implanter can be adjusted.
摘要翻译：本发明提供了一种实时监测离子束的方法。最初，打开一个离子注入机，该离子注入机具有晶片保持器，法拉第杯和靠近离子束预定离子束路径的特殊部分的测量装置，其中法拉第杯位于晶片保持器的下游，测量装置位于晶片保持器的上游。然后，测量由法拉第杯接收的第一离子束电流和由测量装置接收的第二离子束电流。通过连续地测量第一和第二离子束电流，即使在移动晶片夹持器穿过离子束的时段期间，即使法拉第杯至少部分被阻挡，离子束也被实时监测。因此，可以调整正在进行的植入过程和注入机的操作。

8. 发明申请

US20140212595A1 MAGNETIC FIELD FLUCTUATION FOR BEAM SMOOTHING 有权
标题翻译：用于光束吸收的磁场波动
公开(公告)号：US20140212595A1
公开(公告)日：2014-07-31
申请号：US13769189
申请日：2013-02-15
申请人： ADVANCED ION BEAM TECHNOLOGY, INC.
发明人： Xiao BAI , Zhimin WAN , Donald Wayne BERRIAN
IPC分类号： H01J29/46 , C23C14/48
CPC分类号： H01J37/1475 , C23C14/48 , H01J37/3171 , H01J2237/152 , H01J2237/1526 , H01J2237/303 , H01J2237/31701 , H01J2237/31703
摘要： The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.
摘要翻译：用于在工件上注入离子的离子束的时间平均离子束轮廓可以被平滑以减少噪声，峰值，峰值等并且改善剂量均匀性。诸如电磁体的辅助磁场装置可以沿着离子束路径设置，并且可以由周期性信号驱动以产生波动的磁场来平滑离子束轮廓（即，束电流密度分布）。辅助磁场装置可以位于离子束的宽度和高度之外，并且可以产生在离子束的中心附近可能最强的不均匀的波动磁场，其中可以定位最高浓度的离子。波动的磁场可能导致光束轮廓形状连续变化，从而使噪声随时间平均化。

9. 发明申请

US20140097487A1 PLASMA DOPING A NON-PLANAR SEMICONDUCTOR DEVICE 有权
标题翻译：等离子体掺杂非平面半导体器件
公开(公告)号：US20140097487A1
公开(公告)日：2014-04-10
申请号：US13648127
申请日：2012-10-09
申请人： ADVANCED ION BEAM TECHNOLOGY, INC.
发明人： Tzu-Shih YEN , Daniel TANG , Tsungnan CHENG
IPC分类号： H01L21/265 , H01L29/78
CPC分类号： H01L21/2236 , H01L29/66803 , H01L29/785
摘要： In plasma doping a non-planar semiconductor device, a substrate having a non-planar semiconductor body formed thereon is obtained. The substrate having the non-planar semiconductor body may be placed into a chamber. A plasma may be formed in the chamber and the plasma may contain dopant ions. A first bias voltage may be generated to implant dopant ions into a region of the non-planar semiconductor body. A second bias voltage may be generated to implant dopant ions into the same region. In one example, the first bias voltage and the second bias voltage may be different.
摘要翻译：在等离子体掺杂非平面半导体器件中，获得其上形成有非平面半导体体的衬底。具有非平面半导体本体的基板可以放置在室中。等离子体可以在室中形成，等离子体可以含有掺杂离子。可以产生第一偏置电压以将掺杂剂离子注入到非平面半导体本体的区域中。可以产生第二偏置电压以将掺杂剂离子注入到相同的区域中。在一个示例中，第一偏置电压和第二偏置电压可以不同。

10. 发明申请

US20130187207A1 REPLACEMENT SOURCE/DRAIN FINFET FABRICATION 有权
标题翻译：替代来源/排水FINFET制造
公开(公告)号：US20130187207A1
公开(公告)日：2013-07-25
申请号：US13559499
申请日：2012-07-26
申请人： Daniel TANG , Tzu-Shih Yen
发明人： Daniel TANG , Tzu-Shih Yen
IPC分类号： H01L29/66 , H01L29/78
CPC分类号： H01L29/66803 , H01L21/02636 , H01L29/0673 , H01L29/66795 , H01L29/785 , H01L29/78684
摘要： A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched to expose a first region of the fin. A portion of the first region is then doped with a dopant.
摘要翻译：形成具有在源极区和漏极区之间具有源极区，漏极区和沟道区的鳍的finFET。翅片在半导体晶片上蚀刻。形成具有与沟道区域直接接触的绝缘层和与绝缘层直接接触的导电栅极材料的栅极堆叠。蚀刻源区和漏区以暴露鳍的第一区。然后第一区域的一部分掺杂有掺杂剂。

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