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1. 发明授权

US07517557B2 Oxide films, a method of producing the same and structures having the same 失效
标题翻译：氧化物膜，其制造方法和具有该氧化物膜的结构
公开(公告)号：US07517557B2
公开(公告)日：2009-04-14
申请号：US10792852
申请日：2004-03-05
申请人： Makoto Iwai , Makoto Ohmori , Takashi Yoshino , Minoru Imaeda
发明人： Makoto Iwai , Makoto Ohmori , Takashi Yoshino , Minoru Imaeda
IPC分类号： C23C16/00 , B01F3/02
CPC分类号： C30B25/14 , C23C16/40 , C30B25/02 , C30B29/30
摘要： An object of the present invention is to produce an oxide film having good surface morphology and crystal quality, by a metal organic chemical vapor deposition using two or more raw material gases of metal organic compounds and oxygen gas. It is used a film forming system having a first supply hole 11A, a second supply hole 11B, a third supply hole 11C and a film forming chamber 7. A first raw material gas “A” containing a first metal organic compound is supplied through the first supply hole 11A into the chamber 7. A second raw material gas “B” containing the second metal organic compound is supplied through the second supply hole 11B into the chamber 7, and oxygen gas “C” is supplied through the third supply hole 11C into the chamber 7. The oxygen gas “D” contacts the first raw material gas “E” before the oxygen gas is mixed with the second raw material gas “F” in the chamber 7.
摘要翻译：本发明的目的是通过使用两种或更多种金属有机化合物和氧气的原料气体的金属有机化学气相沉积来制造具有良好的表面形态和晶体质量的氧化膜。使用具有第一供给孔11A，第二供给孔11B，第三供给孔11C和成膜室7的成膜体系。通过第一供给孔11A，第二供给孔11B，第三供给孔11C和成膜室7配置含有第一金属有机化合物的第一原料气体“A” 第一供给孔11A插入到室7.包含第二金属有机化合物的第二原料气体“B”通过第二供给孔11B供给到室7中，并且通过第三供给孔11C供给氧气“C” 在氧气与第二原料气体“F”在室7中混合之前，氧气“D”接触第一原料气体“E”。

2. 发明申请

US20090074963A1 OXIDE FILMS, A METHOD OF PRODUCING THE SAME AND STRUCTURES HAVING THE SAME 失效
标题翻译：氧化膜，其制造方法和具有该氧化膜的结构
公开(公告)号：US20090074963A1
公开(公告)日：2009-03-19
申请号：US10792852
申请日：2004-03-05
申请人： Makoto Iwai , Makoto Ohmori , Takashi Yoshino , Minoru Imaeda
发明人： Makoto Iwai , Makoto Ohmori , Takashi Yoshino , Minoru Imaeda
IPC分类号： C23C16/06
CPC分类号： C30B25/14 , C23C16/40 , C30B25/02 , C30B29/30
摘要： An object of the present invention is to produce an oxide film having good surface morphology and crystal quality, by a metal organic chemical vapor deposition using two or more raw material gases of metal organic compounds and oxygen gas. It is used a film forming system having a first supply hole 11A, a second supply hole 11B, a third supply hole 11C and a film forming chamber 7. A first raw material gas “A” containing al first metal organic compound is supplied through the first supply hole 11A into the chamber 7. A second raw material gas “B” containing the second metal organic compound is supplied through the second supply hole 11B into the chamber 7, and oxygen gas “C” is supplied through the third supply hole 11C into the chamber 7. The oxygen gas “D” contacts the first raw material gas “E” before the oxygen gas is mixed with the second raw material gas “F” in the chamber 7.
摘要翻译：本发明的目的是通过使用两种或更多种金属有机化合物和氧气的原料气体的金属有机化学气相沉积来制造具有良好的表面形态和晶体质量的氧化膜。使用具有第一供给孔11A，第二供给孔11B，第三供给孔11C和成膜室7的成膜系统。含有第一金属有机化合物的第一原料气体“A”通过第一供给孔11A插入到室7.包含第二金属有机化合物的第二原料气体“B”通过第二供给孔11B供给到室7中，并且通过第三供给孔11C供给氧气“C” 在氧气与第二原料气体“F”在室7中混合之前，氧气“D”接触第一原料气体“E”。

3. 发明授权

US06807210B2 Systems and a method for generating blue laser beam 有权
标题翻译：用于产生蓝色激光束的系统和方法
公开(公告)号：US06807210B2
公开(公告)日：2004-10-19
申请号：US10396370
申请日：2003-03-26
申请人： Makoto Iwai , Takashi Yoshino , Minoru Imaeda
发明人： Makoto Iwai , Takashi Yoshino , Minoru Imaeda
IPC分类号： H01S314
CPC分类号： G02F1/3775 , H01S3/0604 , H01S3/08 , H01S3/0941 , H01S3/1611 , H01S3/1673
摘要： An object of the present invention is to provide a practical device for generating blue laser beam having a wavelength of 457 nm. The present invention provides a device for generating blue laser beam. The device has a solid-state laser oscillator 3 composed of Nd-doped YVO4 crystal and having a length of not smaller than 0.1 mm and not larger than 1.0 mm, a reflecting means 6A, 6B provided in the oscillator 3, an illuminating means 1 for illuminating pump light beam to the oscillator 3, and a waveguide-type device 5 for generating harmonic wave. The oscillator 3 and reflecting means 1 constitute a resonator 7. The waveguide-type device 5 is provided outside of the resonator 7. The oscillator 3 oscillates laser beam having a wavelength of 914±1 nm, and the waveguide-type device 5 oscillates blue laser “E” having a wavelength of 457±1 nm.
摘要翻译：本发明的目的是提供一种用于产生波长为457nm的蓝色激光束的实用装置。本发明提供一种用于产生蓝色激光束的装置。该器件具有由Nd掺杂的YVO4晶体组成的长度不小于0.1mm且不大于1.0mm的固态激光振荡器3，设置在振荡器3中的反射装置6A，6B，照明装置1 用于将泵浦光束照射到振荡器3，以及用于产生谐波的波导型装置5。振荡器3和反射装置1构成谐振器7.波导型装置5设置在谐振器7的外部。振荡器3振荡波长为914±1nm的激光束，并且波导型装置5振荡蓝色具有波长为457±1nm的激光“E”。

4. 发明授权

US06565654B2 Process and apparatus for producing a planar body of an oxide single crystal 失效
公开(公告)号：US06565654B2
公开(公告)日：2003-05-20
申请号：US09897797
申请日：2001-07-02
申请人： Toshihisa Yokoyama , Masahiro Murasato , Katsuhiro Imai , Minoru Imaeda
发明人： Toshihisa Yokoyama , Masahiro Murasato , Katsuhiro Imai , Minoru Imaeda
IPC分类号： C30B2102
CPC分类号： C30B15/08 , C30B15/00 , C30B29/30 , Y10T117/10
摘要： In a process for producing a planar body of an oxide single crystal with a &mgr; pulling-down method, a shoulder portion having a larger width is grown without any polycrystal regions, cracks or crystal deteriorations in a central portion of the planar body. A raw material of the oxide single crystal is melted in a crucible. A seed crystal is contacted to a melt of the raw material near an opening of a nozzle 13 of the crucible. Then, the melt 18 is drawn from the opening by pulling down the seed crystal to form a planar body 14A. A temperature distribution of the nozzle 13 in a direction perpendicular to the drawing direction B is controlled by supplying heat to the nozzle 13 and/or by removing heat from the nozzle 13.

5. 发明授权

US06353495B1 Method for forming a ferroelectric domain-inverted structure 失效
标题翻译：形成铁电畴反转结构的方法
公开(公告)号：US06353495B1
公开(公告)日：2002-03-05
申请号：US09375082
申请日：1999-08-16
申请人： Kiminori Mizuuchi , Kazuhisa Yamamoto , Tatsuo Kawaguchi , Minoru Imaeda
发明人： Kiminori Mizuuchi , Kazuhisa Yamamoto , Tatsuo Kawaguchi , Minoru Imaeda
IPC分类号： G02F1355
CPC分类号： G02F1/3558 , G02F1/37 , G02F1/3775 , G02F2001/3548
摘要： A method for forming a ferroelectric domain-inverted structure, having the steps of joining at least two kinds of ferroelectric material which have different spontaneous polarizations, and ferroelectric domain-inverting one of the ferroelectric materials and thereby ferroelectric domain-inverting the other ferroelectric material joined thereto.
摘要翻译：一种形成铁电畴反转结构的方法，具有连接具有不同自发极化的至少两种铁电材料的步骤和铁电体反转的铁电体材料之一，从而铁电畴反转另一个铁电材料到此。

6. 发明授权

US06203728B1 Optical single crystal film process for producing the same and optical element comprising the same 失效
标题翻译：用于制造其的光学单晶膜工艺和包括该光学单晶膜的光学元件
公开(公告)号：US06203728B1
公开(公告)日：2001-03-20
申请号：US09495578
申请日：2000-02-01
申请人： Tatsuo Kawaguchi , Minoru Imaeda
发明人： Tatsuo Kawaguchi , Minoru Imaeda
IPC分类号： G02B520
CPC分类号： C30B29/30 , C30B19/02 , C30B33/02 , Y10S117/906 , Y10S117/918
摘要： In producing an optical single crystal epitaxial film from a melt containing a transition metal on a single crystal substrate by a liquid phase epitaxial method, this process contains the steps of: annealing the film at a predetermined temperature in an ozonic atmosphere; and temperature-increasing and -decreasing to and from the predetermined temperature, wherein at least one of temperature-increasing and -decreasing steps, the film is exposed to a substantially ozone-free atmosphere.
摘要翻译：在通过液相外延法在单晶衬底上由含有过渡金属的熔体制造光学单晶外延膜的过程中，包括以下步骤：在臭氧气氛中以预定温度对膜进行退火; 并且在预定温度下升温和降温，其中升温和降温步骤中的至少一个，使该膜暴露于基本上无臭氧的气氛中。

7. 发明授权

US06180872B2 Process and apparatus for growing crystalline silicon plates by pulling the plate through a growth member 失效
标题翻译：通过将板拉动通过生长构件来生长晶体硅板的方法和装置
公开(公告)号：US06180872B2
公开(公告)日：2001-01-30
申请号：US09528070
申请日：2000-03-17
申请人： Tsuguo Fukuda , Minoru Imaeda , Yuichiro Imanishi
发明人： Tsuguo Fukuda , Minoru Imaeda , Yuichiro Imanishi
IPC分类号： C30B1534
CPC分类号： C30B29/06 , C30B15/08 , C30B15/24
摘要： A process for growing a crystalline silicon plate, including the steps of arranging a planar growth member and a growth crucible in which a melt of silicon is placed and which is provided with a melt draw-out opening at a lower side thereof, while at least a tip portion of the growth member is located under the draw-out opening, drawing out the melt from the crucible through the draw-out opening, bringing the drawn out melt into contact with the tip portion of the growth member, and further pulling down the melt through the tip portion of the growth member.
摘要翻译：一种用于生长结晶硅板的方法，包括以下步骤：设置平面生长构件和其中放置硅熔体的生长坩埚，并且在其下侧设置有熔体引出开口，同时至少生长部件的前端部位于拉出口下方，通过拉出口从坩埚抽出熔融液，使拉出的熔融物与生长部件的前端部接触，进一步向下拉熔融物通过生长部件的尖端部分。

8. 发明授权

US6111682A Light modulators 有权
标题翻译：光调制器
公开(公告)号：US6111682A
公开(公告)日：2000-08-29
申请号：US158718
申请日：1998-09-22
申请人： Makoto Minakata , Jungo Kondo , Takashi Yoshino , Minoru Imaeda
发明人： Makoto Minakata , Jungo Kondo , Takashi Yoshino , Minoru Imaeda
IPC分类号： G02F1/035 , G02F1/03
CPC分类号： G02F1/0356 , G02F2201/127
摘要： A light modulator for modulating light upon application of a signal voltage, said light modulator including a substrate, an optical waveguide formed on a side of a front surface of the substrate, and first and secondary electrodes for applying the signal voltage to the light propagating through the optical waveguide, the first electrode being formed on a front surface side of the optical waveguide and including a main portion covering the front surface side of the optical waveguide and a first overhanging portion hanging over toward one side from the main portion.
摘要翻译：一种用于在施加信号电压时调制光的光调制器，所述光调制器包括衬底，形成在衬底前表面侧的光波导，以及用于将信号电压施加到传播通过的光的第一和第二电极所述光波导，所述第一电极形成在所述光波导的前表面侧，并且包括覆盖所述光波导的前表面侧的主要部分和从所述主体部向一侧悬垂的第一突出部。

9. 发明授权

US6074477A Process and an apparatus for producing a composite oxide single crystal body 失效
标题翻译：复合氧化物单晶体的制造方法和装置
公开(公告)号：US6074477A
公开(公告)日：2000-06-13
申请号：US41479
申请日：1998-03-12
申请人： Minoru Imaeda , Tsuguo Fukuda , Kiyoshi Shimamura , Tatsuo Kawaguchi
发明人： Minoru Imaeda , Tsuguo Fukuda , Kiyoshi Shimamura , Tatsuo Kawaguchi
IPC分类号： G02B6/00 , C30B15/00 , C30B15/08 , C30B29/28 , C30B29/30 , G02B6/02 , G02F1/35 , G02F1/355 , H01S3/06 , H01S3/16 , C30B15/34
CPC分类号： C30B15/08 , C30B15/00 , C30B29/28 , C30B29/30 , C30B29/32 , G02B6/02 , Y10S117/91 , Y10T117/1032
摘要： A process is disclosed for producing an integrated composite oxide single crystal body composed of a core portion made of an oxide single crystal and a clad portion integrated with the core portion and made of another oxide single crystal having a composition different from that of the oxide single crystal constituting the core portion, the process comprising the steps of: (1) preparing a first melt in a first crucible by melting a first material for a first oxide single crystal to constitute the core portion inside the first crucible, (2) preparing a second melt inside a second crucible by melting a second material for a second oxide single crystal to constitute the clad portion inside the second crucible, (3) contacting a seed crystal to the first and second melts, (4) pulling down the first melt through a pull-out opening of the first crucible, (5) pulling down the second melt through a pull-out opening of the second crucible and contacting the pulled-down second melt with a pulled-down portion of the first melt, and (6) integrally pulling down the first and second melts.
摘要翻译：公开了一种制造由由氧化物单晶构成的芯部和与芯部形成一体的包层部组成的集成复合氧化物单晶体的方法，该复合氧化物单晶体由具有不同于氧化物单体的组成的另一氧化物单晶制成构成芯部的晶体，该方法包括以下步骤：（1）通过熔化第一氧化物单晶的第一材料在第一坩埚中制备第一熔体以构成第一坩埚内的芯部，（2）制备通过熔化用于第二氧化物单晶的第二材料以在第二坩埚内部构成包层部分，在第二坩埚内熔化第二坩埚，（3）将晶种接触第一和第二熔体，（4）将第一熔体通过第一坩埚的拉出开口，（5）通过第二坩埚的拉出口拉下第二熔体并将下拉的第二熔体与拉出的第二熔体接触，第一熔体的下降部分，以及（6）一体地拉下第一和第二熔体。

10. 发明授权

US5961720A Single crystal-growing apparatus 失效
标题翻译：单晶生长装置
公开(公告)号：US5961720A
公开(公告)日：1999-10-05
申请号：US909138
申请日：1997-08-11
申请人： Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
发明人： Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
IPC分类号： C30B15/00 , C30B15/08 , C30B35/00
CPC分类号： C30B15/08 , C30B15/00 , C30B29/30 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1056 , Y10T117/1064
摘要： A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.
摘要翻译：公开了一种通过向下拉下单晶原料的熔体来连续生产单晶的方法，其中从熔体生长的单晶体被连续地向下拉，并且通过间歇切割连续形成多个单晶产物单晶体向下移动。

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