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1. 发明公开

US20240062996A1 ION BEAM SOURCE, SUBSTRATE PROCESS APPARATUS INCLUDING THE SAME, AND METHOD OF PROCESSING A SUBSTRATE USING THE SAME 审中-公开
公开(公告)号：US20240062996A1
公开(公告)日：2024-02-22
申请号：US18234123
申请日：2023-08-15
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： SeungWan YOO , Jeongyeon LEE , Dohyung KIM , Jaehong PARK , Dong-Chan LIM
IPC分类号： H01J37/32 , C23C14/34
CPC分类号： H01J37/32697 , H01J37/3211 , C23C14/3442 , H01J37/34
摘要： An ion beam source including a plasma chamber including a plasma generating space, a plasma generator configured to generate plasma in the plasma generating space, a first grid connected to the plasma chamber, a second grid connected to the plasma chamber, and a first grid driver connected to the first grid. The first grid driver may be configured to move the first grid relative to the second grid.

2. 发明申请

US20170111028A1 ACOUSTIC RESONATOR STRUCTURE WITH INCLINED C-AXIS PIEZOELECTRIC BULK AND CRYSTALLINE SEED LAYERS 审中-公开
公开(公告)号：US20170111028A1
公开(公告)日：2017-04-20
申请号：US15293082
申请日：2016-10-13
申请人： Qorvo US, Inc.
发明人： Kevin McCarron , John Belsick
IPC分类号： H03H9/205 , H03H9/125 , H03H9/02
CPC分类号： H03H3/02 , C23C14/0036 , C23C14/024 , C23C14/0617 , C23C14/086 , C23C14/226 , C23C14/3442 , C23C14/35 , C23C14/566 , C23C14/568 , C30B25/06 , C30B25/186 , C30B29/403 , H01J37/32715 , H01J37/3408 , H01J37/3417 , H01J37/3447 , H01J37/347 , H01L41/35 , H03H9/02015 , H03H9/02047 , H03H9/02157 , H03H9/125 , H03H9/173 , H03H9/175 , H03H9/205
摘要： Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

3. 发明授权

US09134250B2 SERS-sensor with nanostructured layer and methods of making and using 有权
标题翻译：具有纳米结构层的SERS传感器和制造和使用方法
公开(公告)号：US09134250B2
公开(公告)日：2015-09-15
申请号：US14385750
申请日：2012-03-23
申请人： Valery K. Smirnov , Dmitry S. Kibalov
发明人： Valery K. Smirnov , Dmitry S. Kibalov
IPC分类号： G01N21/65 , B81C1/00 , C23C14/34 , B82Y15/00 , B82Y40/00
CPC分类号： G01N21/658 , B81C1/00031 , B81C2201/0143 , B82Y15/00 , B82Y40/00 , C23C14/3442 , G01N2201/06113 , Y10S977/81
摘要： A nanostructured arrangement includes a substrate having a surface and comprising a metal and a nanostructured layer formed on the substrate surface by an ion beam. The nanostructured layer includes a plurality of hollow metal nanospheres. Each of the plurality of nanospheres includes a chemical compound formed from the metal of the substrate by the ion beam. An example of a nanostructured arrangement is a surface enhanced Raman scattering (SERS) sensor.
摘要翻译：纳米结构布置包括具有表面并且包括通过离子束在衬底表面上形成的金属和纳米结构层的衬底。纳米结构层包括多个中空金属纳米球。多个纳米球中的每一个包括通过离子束从衬底的金属形成的化合物。纳米结构布置的示例是表面增强拉曼散射（SERS）传感器。

4. 发明授权

US09110230B2 Scratch-resistant articles with retained optical properties 有权
标题翻译：具有保留光学性能的耐刮擦物品
公开(公告)号：US09110230B2
公开(公告)日：2015-08-18
申请号：US14267516
申请日：2014-05-01
申请人： CORNING INCORPORATED
发明人： Karl William Koch, III , Charles Andrew Paulson
IPC分类号： G02B1/10 , C03C17/245 , C03C17/34 , C23C14/34
CPC分类号： C03C17/3435 , C03C3/091 , C03C17/245 , C03C17/3411 , C03C21/002 , C03C2217/78 , C03C2217/91 , C23C14/34 , C23C14/3442 , G02B1/10 , G02B1/105 , G02B1/14 , Y10T428/2495 , Y10T428/31612
摘要： One or more aspects of the disclosure pertain to an article including an optical film structure disposed on an inorganic oxide substrate, which may include a strengthened or non-strengthened substrate that may be amorphous or crystalline, such that the article exhibits scratch resistance and retains the same or improved optical properties as the inorganic oxide substrate, without the optical film structure disposed thereon. In one or more embodiments, the article exhibits an average transmittance of 85% or more, over the visible spectrum (e.g., 380 nm-780 nm). Embodiments of the optical film structure include aluminum-containing oxides, aluminum-containing oxy-nitrides, aluminum-containing nitrides (e.g., AlN) and combinations thereof. The optical film structures disclosed herein also include a transparent dielectric including oxides such as silicon oxide, germanium oxide, aluminum oxide and a combination thereof. Methods of forming such articles are also provided.
摘要翻译：本公开的一个或多个方面涉及包括设置在无机氧化物基底上的光学膜结构的物品，其可以包括可以是无定形或结晶的强化或非加强基底，使得该制品具有耐刮擦性并保持与无机氧化物衬底相同或改善的光学性质，其中没有设置光学膜结构。在一个或多个实施方案中，制品在可见光谱（例如，380nm-780nm）上显示85％或更多的平均透射率。光学膜结构的实施例包括含铝氧化物，含铝氧化物，含铝氮化物（例如AlN）及其组合。本文公开的光学膜结构还包括包括氧化物如氧化硅，氧化锗，氧化铝及其组合的透明电介质。还提供了形成这种制品的方法。

5. 发明授权

US08779400B2 Ion source, ion beam processing/observation apparatus, charged particle beam apparatus, and method for observing cross section of sample 有权
标题翻译：离子源，离子束处理/观察装置，带电粒子束装置和观察样品截面的方法
公开(公告)号：US08779400B2
公开(公告)日：2014-07-15
申请号：US13926352
申请日：2013-06-25
申请人： Hitachi High-Technologies Corporation
发明人： Hiroyasu Shichi , Satoshi Tomimatsu , Kaoru Umemura , Noriyuki Kaneoka , Koji Ishiguro
IPC分类号： G21G5/00
CPC分类号： C23C14/3442 , H01J27/10 , H01J37/08 , H01J37/28 , H01J37/3023 , H01J37/3056 , H01J2237/006 , H01J2237/057 , H01J2237/0807 , H01J2237/0825 , H01J2237/0827 , H01J2237/31745 , H01J2237/31749
摘要： An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder, a gas tube, a gas volume control valve, and a stop valve.
摘要翻译：一种与电子部件的横截面观察技术有关的离子束加工和观察方法，通过使用离子束加工样品的电子部件和能够减少填充加工孔的时间的带电粒子束处理器在填充区域具有高度的平整度。观察装置能够切换用于用于观察样品的气体离子束的种类来加工样品的气体离子束的种类。为了实现用于样品加工的气体离子束的种类和用于样品观察的气体离子束的种类之间的切换，使用至少两个气体引入系统，每个系统具有气瓶，气体管，气体量控制阀和截止阀。

6. 发明授权

US08541792B2 Method of treating the surface of a soda lime silica glass substrate, surface-treated glass substrate, and device incorporating the same 有权
标题翻译：处理钠钙石英玻璃基板，表面处理玻璃基板及其结合装置的表面的方法
公开(公告)号：US08541792B2
公开(公告)日：2013-09-24
申请号：US12923952
申请日：2010-10-15
申请人： Scott V. Thomsen
发明人： Scott V. Thomsen
IPC分类号： H01L29/18
CPC分类号： C03C17/245 , C03C17/002 , C03C2218/31 , C23C14/08 , C23C14/3442 , G02F2001/133302 , G02F2001/133337 , G02F2202/09
摘要： Certain example embodiments of this invention relate to methods of treating the surface of a soda lime silica glass substrate, e.g., a soda lime silica alkali ion glass substrate, and the resulting surface-treated glass articles. More particularly, certain example embodiments of this invention relate to methods of removing a top surface portion of a glass substrate using ion sources. During or after removal of this portion, the glass may then be coated with another layer, to be used as a capping layer. In certain example embodiments, the glass substrate coated with a capping layer may be used as a color filter and/or TFT substrate in an electronic device. In other example embodiments, the glass substrate with the capping layer thereon may be used in a variety of display devices.
摘要翻译：本发明的某些示例性实施方案涉及处理钠钙石英玻璃基板（例如钠钙硅酸钠离子玻璃基板）的表面处理方法以及所得到的经表面处理的玻璃制品。更具体地，本发明的某些示例性实施例涉及使用离子源去除玻璃基板的顶表面部分的方法。在除去该部分之前或之后，然后可以用另一层涂覆玻璃，以用作覆盖层。在某些示例性实施例中，涂覆有覆盖层的玻璃基板可以用作电子设备中的滤色器和/或TFT基板。在其他示例性实施例中，其上具有覆盖层的玻璃基板可以用于各种显示装置。

7. 发明申请

US20100065417A1 Methods for forming superconducting conductors 审中-公开
标题翻译：形成超导导体的方法
公开(公告)号：US20100065417A1
公开(公告)日：2010-03-18
申请号：US11287770
申请日：2005-11-28
申请人： Venkat Selvamanickam
发明人： Venkat Selvamanickam
IPC分类号： C23C14/34 , B05D5/12
CPC分类号： C23C14/3442 , C23C14/024 , C23C14/087 , H01L39/2461
摘要： A method for producing a superconducting conductor is disclosed, including providing a substrate, depositing a buffer film having a biaxial texture to overlie the substrate by reactive sputtering, and depositing a superconducting layer to overlie the buffer film. Deposition of the buffer film is carried out by exposing the substrate along a deposition zone to a material plume generated by bombarding a target in the presence of a magnetic field, the deposition zone having a length of at least 1.0 m. The assist ions may be generated from a gridless ion source. The buffer film may have a biaxial texture having an out-of-plane crystallographic texture represented by a mosaic spread of not greater than 30°.
摘要翻译：公开了一种用于制造超导体的方法，包括提供衬底，通过反应溅射沉积具有双轴纹理的缓冲膜覆盖在衬底上，以及沉积超导层以覆盖缓冲膜。缓冲膜的沉积是通过将衬底沿着沉积区暴露于通过在存在磁场的情况下轰击靶而产生的材料羽流而进行的，该沉积区的长度至少为1.0μm。辅助离子可以从无电子离子源产生。缓冲膜可以具有由不大于30°的马赛克扩展表示的面外晶体结构的双轴纹理。

8. 发明申请

US20090236949A1 PROCESS FOR PRODUCING A PIEZOELECTRIC FILM, FILM FORMING APPARATUS, AND PIEZOELECTRIC FILM 有权
标题翻译：压电膜生产方法，成膜装置和压电薄膜
公开(公告)号：US20090236949A1
公开(公告)日：2009-09-24
申请号：US12409185
申请日：2009-03-23
申请人： Takamichi FUJII , Ryuji TSUKAMOTO
发明人： Takamichi FUJII , Ryuji TSUKAMOTO
IPC分类号： H01L41/04 , H01L41/22
CPC分类号： H01L41/257 , C23C14/088 , C23C14/34 , C23C14/3442 , C23C14/345 , H01L41/316 , Y10T29/42
摘要： A piezoelectric film is formed on a substrate by a sputtering technique at a film formation temperature higher than a Curie temperature. An electric field is formed across the piezoelectric film in a direction heading from a surface side of the piezoelectric film toward the substrate side before a temperature of the piezoelectric film having been formed falls to a temperature lower than the Curie temperature, polarization processing being caused to begin by the formation of the electric field across the piezoelectric film. The temperature of the piezoelectric film is allowed to fall to a temperature lower than the Curie temperature in the state in which the electric field is being formed.
摘要翻译：通过溅射技术在高于居里温度的成膜温度下在基板上形成压电膜。在形成压电膜的温度下降到低于居里温度的温度之前，在压电膜的从压电膜的表面侧朝向基板侧的方向上形成电场，使偏振处理首先是形成跨越压电薄膜的电场。在形成电场的状态下，使压电膜的温度下降到低于居里温度的温度。

9. 发明申请

US20090020415A1 "Iontron" ion beam deposition source and a method for sputter deposition of different layers using this source 审中-公开
标题翻译： “Iontron”离子束沉积源和使用该源溅射沉积不同层的方法
公开(公告)号：US20090020415A1
公开(公告)日：2009-01-22
申请号：US11879136
申请日：2007-07-16
申请人： Michael Gutkin , Alexander Bizyukov , Vladimir Sleptsov , Ivan Bizyukov , Konstantin Sereda
发明人： Michael Gutkin , Alexander Bizyukov , Vladimir Sleptsov , Ivan Bizyukov , Konstantin Sereda
IPC分类号： C23C14/46
CPC分类号： C23C14/3442 , C23C14/16 , H01J37/3266 , H01J37/34 , H01J2237/152 , H01J2237/3146
摘要： The present invention discloses technology for thin film ion beam sputter deposition on a substrate. The apparatus is a self-contained ion beam deposition source, which can be attached to or positioned inside of a vacuum chamber where substrates are located. This source consists of one or more ion beam sources combined with one or more sputtering targets and a unified magnetic field acting as a devise controlling delivery of the charged particles to the treated by the Iontron workpiece (substrate). The ion beam emits ion beams toward the target that generate sputtered particles directed toward the substrate, thus creating a thin film on the surface of the substrate. The target can be electrically biased, not biased or floating, thus allowing for modulation of the location upon which the charged ions impinge the target. Additionally, the position of the target can be adjusted relatively to the ion beam.
摘要翻译：本发明公开了一种薄膜离子束溅射沉积在基片上的技术。该装置是独立的离子束沉积源，其可以附接到或位于基板所在的真空室内部。该源包括与一个或多个溅射靶组合的一个或多个离子束源和用作控制通过Iontron工件（衬底）处理的带电粒子的设计的统一磁场。离子束朝向靶产生离子束，产生朝向衬底的溅射颗粒，从而在衬底的表面上产生薄膜。目标可以是电偏置的，而不是偏置的或浮动的，从而允许调制带电离子撞击目标的位置。此外，可以相对于离子束来调整目标的位置。

10. 发明申请

US20080210544A1 METHOD FOR MANUFACTURING A MAGNETIC TUNNEL JUNCTION SENSOR USING ION BEAM DEPOSITION 审中-公开
标题翻译：使用离子束沉积制造磁性隧道结传感器的方法
公开(公告)号：US20080210544A1
公开(公告)日：2008-09-04
申请号：US11848104
申请日：2007-08-30
申请人： Mustafa Michael Pinarbasi
发明人： Mustafa Michael Pinarbasi
IPC分类号： C23C14/34
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/081 , C23C14/3442 , C23C14/46 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3906 , H01F10/3254 , H01F41/18 , H01F41/307
摘要： A method for forming a MgOx barrier layer in a magnetic tunnel junction (MTJ) sensor, also known in the art as a tunneling magnetoresistance (TMR) sensor. The MgOx barrier layer is deposited by an ion beam deposition (IBD) process that results in a MgOx barrier layer having exceptional, uniform properties and a well-controlled oxygen content. The ion beam deposition of the barrier layer includes placing a wafer into an ion beam deposition (IBD) chamber provided with a Mg target. An ion beam from an ion gun is directed at the target thereby sputtering Mg atoms from the target for deposition onto the wafer. Oxygen is admitted into the chamber as one or both of two species: molecular oxygen, O2, admitted through a gas inlet, and oxygen ions, admitted through a second ion gun, The use of ion beam deposition avoids oxygen poisoning of the Mg target, such as would occur using a more conventional plasma vapor deposition (PVD) technique.
摘要翻译：在磁性隧道结（MTJ）传感器中形成MgO 阻挡层的方法，在本领域中也称为隧道磁阻（TMR）传感器。通过离子束沉积（IBD）工艺沉积MgO xSOS阻挡层，其导致具有特别均匀性质的氧化镁阻挡层和良好控制的氧含量。阻挡层的离子束沉积包括将晶片放置在设置有Mg靶的离子束沉积（IBD）室中。来自离子枪的离子束被引导到靶，从而溅射来自靶的Mg原子以沉积到晶片上。氧气作为两种物质之一或两者进入腔室：通过气体入口进入的分子氧O 2和通过第二离子枪进入的氧离子。使用离子束沉积避免了Mg靶的氧中毒，例如使用更传统的等离子体气相沉积（PVD）技术发生的氧中毒。

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