会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 10. 发明申请
    • MOLECULE SENSOR DEVICE
    • 分子传感器设备
    • US20130334578A1
    • 2013-12-19
    • US13870009
    • 2013-04-25
    • NATIONAL TAIWAN UNIVERSITY
    • CHE-WEI HUANGYU-JIE HUANGPEI-WEN YENHSIAO-TING HSUEHSHEY-SHI LUCHIH-TING LIN
    • G01N27/414
    • G01N27/4145B82Y15/00Y10S977/762Y10S977/92
    • A molecule sensor included in a molecule sensor device has a semiconductor substrate, a bottom gate, a source portion, a drain portion, and a nano-scale semiconductor wire. The bottom gate is for example a poly-silicon layer formed on the semiconductor substrate and electrically insulated from the semiconductor substrate. The source portion is formed on the semiconductor substrate and insulated from the semiconductor substrate. The drain portion is formed on the semiconductor substrate and insulated from the semiconductor substrate. The nano-scale semiconductor wire is connected between the source portion and the drain portion, formed on the bottom gate, insulated from the bottom gate, and has a decoration layer thereon for capturing a molecular. The source portion, drain portion, and nano-wire semiconductor wire are for example another poly-silicon layer. The bottom gate receives a specified voltage to change an amount of surface charge carriers of the nano-scale semiconductor wire.
    • 包含在分子传感器装置中的分子传感器具有半导体衬底,底栅,源极部,漏极部和纳米级半导体线。 底栅是例如形成在半导体衬底上并与半导体衬底电绝缘的多晶硅层。 源极部分形成在半导体衬底上并与半导体衬底绝缘。 漏极部分形成在半导体衬底上并与半导体衬底绝缘。 纳米级半导体线连接在源极部分和漏极部分之间,形成在底部栅极上,与底部栅极绝缘,并且在其上具有用于捕获分子的装饰层。 源极部分,漏极部分和纳米线半导体导线例如是另一个多晶硅层。 底栅接收指定电压以改变纳米级半导体线的表面电荷载流子的量。