专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20220357360A1 SEMICONDUCTOR-LASER-INTEGRATED ATOMIC FORCE MICROSCOPY OPTICAL PROBE 有权
公开(公告)号：US20220357360A1
公开(公告)日：2022-11-10
申请号：US17697314
申请日：2022-03-17
申请人： ALEXANDER A. UKHANOV , GENNADY A. SMOLYAKOV , FEI HUNG CHU
发明人： ALEXANDER A. UKHANOV , GENNADY A. SMOLYAKOV , FEI HUNG CHU
IPC分类号： G01Q60/38 , G01Q60/32 , G01Q80/00 , G01Q70/12
摘要： A new semiconductor-laser-integrated Atomic Force Microscopy (AFM) optical probe integrates a semiconductor laser and a silicon cantilever AFM probe into a robust easy-to-use chip to enable AFM measurements, optical imaging, and spectroscopy at the nanoscale.

2. 发明授权

US11002758B2 Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lithography tips 有权
公开(公告)号：US11002758B2
公开(公告)日：2021-05-11
申请号：US16095011
申请日：2017-04-24
申请人： UNM RAINFOREST INNOVATIONS
发明人： Steven R. J. Brueck , Daniel Feezell , John Randall , Tito Busani , Joshua B. Ballard , Mahmoud Behzadirad , Ashwin Krishnan Rishinaramangalam
IPC分类号： G01Q70/10 , G01Q70/12 , G01Q60/16 , B82B3/00 , G01Q70/06 , G01Q70/14 , G01Q80/00 , G03F7/00
摘要： Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning, tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.

3. 发明授权

US10330581B2 Debris removal from high aspect structures 有权
公开(公告)号：US10330581B2
公开(公告)日：2019-06-25
申请号：US15160302
申请日：2016-05-20
申请人： RAVE LLC
发明人： Tod Evan Robinson , Bernabe J. Arruza , Kenneth Gilbert Roessler , David Brinkley , Jeffrey E. Leclaire
IPC分类号： B08B6/00 , B08B7/00 , B08B9/087 , G01N15/14 , G01N15/10 , B08B1/00 , G03F7/20 , G03F1/82 , G03F1/84 , G03F7/00 , G01Q80/00 , G01Q20/02 , G01Q60/42 , G01Q70/12
摘要： A debris collection and metrology system for collecting and analyzing debris from a tip used in nanomachining processes, the system including an irradiation source, an irradiation detector, an actuator, and a controller. The irradiation source is operable to direct incident irradiation onto the tip, and the irradiation detector is operable to receive a sample irradiation from the tip, the sample irradiation being generated as a result of the direct incident irradiation being applied onto the tip. The controller is operatively coupled to an actuator system and the irradiation detector, and the controller is operable to receive a first signal based on a first response of the irradiation detector to the sample irradiation, and the controller is operable to effect relative motion between the tip and at least one of the irradiation source and the irradiation detector based on the first signal.

4. 发明授权

US09784761B2 Active probe for near field optical microscopy comprising hyperpolarizable molecules aligned and oriented to emit, upon illumination, a different wavelength than that of illumination 有权
公开(公告)号：US09784761B2
公开(公告)日：2017-10-10
申请号：US14377627
申请日：2013-02-06
申请人： Commissariat A L'Energie Atomique Et Aux Energies Alternatives
发明人： Céline Fiorini , Fabrice Charra , Ludovic Douillard
IPC分类号： G01Q70/12 , G01Q60/22 , G01Q60/20
CPC分类号： G01Q60/22 , G01Q60/20
摘要： The invention relates to an active probe for near-field optical microscopy, characterized in that it includes a metal or metallized tip (PM) at the apex of which a nanoscale body (NB) is located, the body having a polymer matrix capable of, or containing a host (MH) capable of, emitting under illumination, light (SH) at a wavelength different from that of the illumination. A process for manufacturing such a probe is also provided.

5. 发明授权

US08920700B1 Telescopic nanotube device for hot nanolithography 有权
标题翻译：用于热纳米光刻的伸缩纳米管装置
公开(公告)号：US08920700B1
公开(公告)日：2014-12-30
申请号：US13023782
申请日：2011-02-09
申请人： Adrian Popescu , Lilia M. Woods
发明人： Adrian Popescu , Lilia M. Woods
IPC分类号： B82Y40/00 , B26D7/10 , G01Q70/12 , B26D3/08 , B26D3/06 , G01Q60/24
CPC分类号： B82Y40/00 , B26D3/065 , B26D3/085 , B26D7/10 , G01Q60/24 , G01Q70/12 , G01Q80/00 , G03F7/0002
摘要： A device for maintaining a constant tip-surface distance for producing nanolithography patterns on a surface using a telescopic nanotube for hot nanolithography. An outer nanotube is attached to an AFM cantilever opposite a support end. An inner nanotube is telescopically disposed within the outer nanotube. The tip of the inner nanotube is heated to a sufficiently high temperature and brought in the vicinity of the surface. Heat is transmitted to the surface for thermal imprinting. Because the inner tube moves telescopically along the outer nanotube axis, a tip-surface distance is maintained constant due to the vdW force interaction, which in turn eliminates the need of an active feedback loop.
摘要翻译：用于使用用于热纳米光刻的伸缩纳米管在表面上保持用于产生纳米光刻图案的恒定的尖端表面距离的装置。外部纳米管与支撑端相对的AFM悬臂连接。内部纳米管可伸缩地设置在外部纳米管内。将内部纳米管的尖端加热到足够高的温度并带入表面附近。热传递到表面进行热压印。因为内管沿着外部的纳米管轴伸缩地移动，所以由于vdW力相互作用，尖端表面距离保持恒定，这进而消除了主动反馈回路的需要。

6. 发明授权

US08726411B1 Charged probe and electric fields measurement method thereof 有权
标题翻译：带电探头及电场测量方法
公开(公告)号：US08726411B1
公开(公告)日：2014-05-13
申请号：US13920797
申请日：2013-06-18
申请人： National Tsing Hua University
发明人： Fan-Gang Tseng , Joe-Ming Chang
IPC分类号： G01Q70/12 , G01Q20/02 , G01B7/34 , G01B5/28 , H01L21/306 , G01K13/00
CPC分类号： G01Q70/14 , G01Q60/30 , G01Q60/38
摘要： A charged probe and an electric field measuring method are provided. The probe can be charged with single electricity on single nano particle attached on the top of the probe tip being a charged probe and the probe is applicable for measuring the electric fields of object in the nano scale. The probe comprises an insulating tip base, a cantilever and a single nano-particle. The cantilever is arranged for supporting the insulating tip base and the single nano-particle is configured on the erosion plane. After conducting contact electrification method to charge the electric nano particle, the single nano-particle will be charged with fixed number of single electrical charge. Then, the amount of the fixed number of single electrical charge is calculated by the virtual image charge calculation method. The charged probe can be used to measure the electric fields distribution by tapping mode or f-d curve measurement.
摘要翻译：提供了带电探针和电场测量方法。探针可以在单个纳米颗粒上充电，单个纳米颗粒附着在作为带电探针的探针尖端上，探头可用于测量纳米级物体的电场。探针包括绝缘尖端基座，悬臂和单个纳米粒子。悬臂布置用于支撑绝缘尖端基座，单个纳米颗粒构造在侵蚀平面上。在接触电化法对电纳米颗粒进行充电之后，单个纳米颗粒将以固定数量的单电荷充电。然后，通过虚拟图像电荷计算方法计算固定数量的单个电荷的量。带电探头可用于通过敲击模式或f-d曲线测量来测量电场分布。

7. 发明授权

US08716938B2 Thermionic emission device 有权
标题翻译：热电子发射装置
公开(公告)号：US08716938B2
公开(公告)日：2014-05-06
申请号：US13592867
申请日：2012-08-23
申请人： Yang Wei , Shou-Shan Fan
发明人： Yang Wei , Shou-Shan Fan
IPC分类号： H01J7/24 , H05B31/26 , G01Q60/40 , G01Q70/12
CPC分类号： G01Q60/40 , B82Y15/00 , G01Q70/12 , H01J1/14 , H01J1/16
摘要： A thermionic emission device includes an insulating substrate, a patterned carbon nanotube film structure, a positive electrode and a negative electrode. The insulating substrate includes a surface. The surface includes an edge. The patterned carbon nanotube film structure is partially arranged on the surface of the insulating substrate. The patterned carbon nanotube film structure includes two strip-shaped arms joined at one end to form a tip portion protruded from the edge of the surface of the insulating substrate and suspended. The patterned carbon nanotube film structure includes a number of carbon nanotubes parallel to the surface of the insulating substrate. The patterned carbon nanotube film structure is connected between the positive electrode and the negative electrode in series.
摘要翻译：热电子发射器件包括绝缘衬底，图案化碳纳米管膜结构，正极和负极。绝缘基板包括表面。表面包括边缘。图案化的碳纳米管膜结构部分地布置在绝缘基板的表面上。图案化碳纳米管膜结构包括两端连接的带状臂，形成从绝缘基板的表面的边缘突出的顶端部分并悬挂。图案化碳纳米管膜结构包括平行于绝缘基板的表面的多个碳纳米管。图案化碳纳米管膜结构串联连接在正极和负极之间。

8. 发明授权

US08689359B2 Apparatus and method for investigating surface properties of different materials 有权
标题翻译：用于研究不同材料表面性质的装置和方法
公开(公告)号：US08689359B2
公开(公告)日：2014-04-01
申请号：US12666745
申请日：2008-06-26
申请人： Ivo W. Rangelow , Tzvetan Ivanov , Burkhard Volland , Teodor Gotszalk , Miroslaw Woszczyna , Jerzy Mielczarski , Yanko Sarov
发明人： Ivo W. Rangelow , Tzvetan Ivanov , Burkhard Volland , Teodor Gotszalk , Miroslaw Woszczyna , Jerzy Mielczarski , Yanko Sarov
IPC分类号： G01Q20/04 , G01Q70/10 , G01Q60/26 , G01Q70/06 , G01Q70/12
CPC分类号： G01Q20/04 , G01Q10/045 , G01Q10/065 , G01Q60/26 , G01Q60/38 , G01Q70/06 , G01Q70/10 , G01Q70/12
摘要： The present invention relates to an apparatus and a method for investigating surface properties of different materials, which make it possible to carry out atomic force microscopy with a simplified and faster shear force method. The apparatus according to the invention is characterized by perpendicular orientation of the measuring tip of a self-actuated cantilever with respect to the surface of the sample. A piezoresistive sensor and a bimorph actuator are preferably DC-isolated. The measuring tip is in the form of a carbon nanotube, in particular. A plurality of cantilevers can be arranged in the form of a cantilever array which is characterized by a comb-like arrangement of individual pre-bent cantilevers. The method according to the invention is distinguished by a fast feedback signal on account of the distance between the measuring tip and the surface to be investigated being regulated using the change in a DC signal which supplies the actuator.
摘要翻译：本发明涉及一种用于研究不同材料的表面性质的装置和方法，其使得可以以简化和更快的剪切力方法进行原子力显微镜。根据本发明的装置的特征在于相对于样品的表面垂直定向自动致动悬臂的测量头。压阻传感器和双压电晶片致动器优选地被直流隔离。测量头是特别是碳纳米管的形式。多个悬臂可以以悬臂阵列的形式布置，其特征在于单独的预弯曲悬臂的梳状布置。根据本发明的方法通过快速反馈信号来区分，因为使用供应致动器的DC信号的变化来调节测量尖端和待研究表面之间的距离。

9. 发明授权

US08245318B2 Sidewall tracing nanoprobes, method for making the same, and method for use 有权
标题翻译：侧壁跟踪纳米探针，制作方法和使用方法
公开(公告)号：US08245318B2
公开(公告)日：2012-08-14
申请号：US12375161
申请日：2007-07-27
申请人： Sungho Jin , Li-Han Chen , Gregory Dahlen , Hao-Chih Liu
发明人： Sungho Jin , Li-Han Chen , Gregory Dahlen , Hao-Chih Liu
IPC分类号： G01Q70/12
CPC分类号： G01Q60/38 , G01Q70/12
摘要： Sidewall tracing nanoprobes, in which the tip shape of the nanoprobe Is altered so that the diameter or width of the very tip of the probe is wider than the diameter of the supporting stem. Such side protruding probe tips are fabricated by a subtractive method of reducing the stem diameter, an additive method of increasing the tip diameter, or sideway bending of the probe tip. These sidewall tracing nanoprobes are useful for inspection of semiconductor devices, especially to quantitatively evaluate the defects on the side wall of trenches or via holes.
摘要翻译：侧壁跟踪纳米探针，其中纳米探针的尖端形状被改变，使得探针的尖端的直径或宽度比支撑杆的直径宽。这种侧突出的探针尖端通过减小茎直径的减法方法，增加尖端直径的添加方法或探针尖端的侧向弯曲来制造。这些侧壁跟踪纳米探针可用于检查半导体器件，特别是定量评估沟槽或通孔侧壁上的缺陷。

10. 发明授权

US07917966B2 Aligned nanostructures on a tip 有权
标题翻译：对齐纳米结构在一个尖端
公开(公告)号：US07917966B2
公开(公告)日：2011-03-29
申请号：US12196194
申请日：2008-08-21
申请人： Yong Hyup Kim , Wal Jun Kim
发明人： Yong Hyup Kim , Wal Jun Kim
IPC分类号： G01Q70/12
CPC分类号： G01Q70/12 , Y10S977/849 , Y10S977/86 , Y10S977/902 , Y10S977/947
摘要： Techniques for fabricating carbon nanotubes aligned on a tip are provided. In one embodiment, a method for fabricating carbon nanotubes aligned on a tip includes forming nanostructures on the tip, and aligning the nanostructures on the tip using a fluid flowing on the tip.
摘要翻译：提供了用于制造在尖端上对齐的碳纳米管的技术。在一个实施例中，用于制造在尖端上对准的碳纳米管的方法包括在尖端上形成纳米结构，并使用在尖端上流动的流体对准尖端上的纳米结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式