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    • 1. 发明申请
    • METHOD OF MANUFACTURING AN ELECTRONIC DEVICE COMPRISING THIN-FILM TRANSISTORS
    • 制造包含薄膜晶体管的电子器件的方法
    • WO9749125A3
    • 1999-11-04
    • PCT/IB9700471
    • 1997-04-30
    • PHILIPS ELECTRONICS NVPHILIPS NORDEN AB
    • YOUNG NIGEL DAVID
    • H01L21/20H01L21/336H01L29/786H01L21/263H01L21/268
    • H01L29/66757H01L21/2026H01L27/1229H01L27/1281H01L29/78609
    • A flat panel display or other large-area electronic device comprises at least one TFT (T1; T2) having a crystalline channel region (1) and amorphous edge regions (13) adjacent sidewalls (12) of the TFT island (11). The TFT is fabricated by steps which include: (a) depositing on substrate (10) a thin film (11') of amorphous semiconductor material to provide the semiconductor material, (b) removing areas of the thin film (11') to form the side walls (12a, 12b) of each island (11), (c) forming a masking pattern (20) over the edge regions (13a, 13b) preferably on an insulating film (22), and (d) directing a laser or other energy beam (50) towards the islands (11) and the masking pattern (20) to crystallise the un-masked semiconductor material for the crystalline channel region (1), while retaining amorphous semiconductor material adjacent the side walls (12a, 12b) where the edge regions (13a, 13b) are masked from the energy beam (50) by the masking pattern (20). The resulting device structure has e.g polycrystalline TFTs (T1, T2) with low off-state leakage currents as a result of the amorphous material properties kept for the edge regions (13a) particularly where crossed by the insulated gate (4). The substrate (10) may be of polymer material which also is masked from the beam (50) by the masking pattern (20).
    • 平板显示器或其他大面积电子器件包括具有晶体沟道区域(1)的至少一个TFT(T1; T2)和与TFT岛(11)的侧壁(12)相邻的非晶边缘区域(13)。 TFT由以下步骤制造,其包括:(a)在衬底(10)上沉积非晶半导体材料的薄膜(11')以提供半导体材料,(b)去除薄膜(11')的区域以形成 每个岛(11)的侧壁(12a,12b),(c)优选地在绝缘膜(22)上在边缘区域(13a,13b)上形成掩模图案(20),和(d)引导激光 或其他能量束(50)朝向岛(11)和掩模图案(20)以结晶用于晶体沟道区域(1)的未掩蔽的半导体材料,同时保持邻近侧壁(12a,12b)的非晶半导体材料 ),其中所述边缘区域(13a,13b)被所述掩模图案(20)从所述能量束(50)掩蔽。 所得到的器件结构具有例如由于对于边缘区域(13a)保持的非晶材料特性,特别是在被绝缘栅极(4)交叉的情况下,具有低截止状态漏电流的多晶硅(T1,T2)。 衬底(10)可以是聚合物材料,其也通过掩模图案(20)从光束(50)掩蔽。
    • 2. 发明申请
    • DC AND AC CURRENT SENSOR WITH DISCONTINUOUS SAMPLING
    • 直流和交流电流传感器不连续采样
    • WO9902997A3
    • 1999-04-08
    • PCT/IB9801034
    • 1998-07-06
    • KONINKL PHILIPS ELECTRONICS NVPHILIPS NORDEN AB
    • GU WEN-JIANLEE NAI-CHI
    • G01R15/18
    • G01R15/183
    • Current is sensed by a circuit which provides a high frequency reversing voltage to a sensing winding on a current transformer, for driving the transformer into its linear region once per cycle of applied voltage. Current through the sensing winding is sampled while the transformer is in that linear region. After taking a current sample application of the reversing voltage, sensor power consumption is reduced by inhibiting the application of voltage to the sensing winding for one or more of the high frequency cycles, or the same control and sensing circuitry is used to cause application of reversing voltage to a sensing winding on a different transformer measuring current through a different conductor, such as in a polyphase arrangement or for monitoring ground fault current. Preferably, the current is sampled approximately at the instants of reversal of the voltage being applied to the sensing winding, and the sample having the lower absolute value is selected as a sample proportional to the line current.
    • 通过电路感测电流,该电路向电流互感器上的感测绕组提供高频反向电压,用于每个施加电压周期将变压器驱动到其线性区域一次。 当变压器处于该线性区域时,通过感测绕组的电流被采样。 在对当前的反向电压采样进行采样之后,通过禁止在一个或多个高频周期对感测绕组施加电压来降低传感器功耗,或者使用相同的控制和感测电路来引起反向 电压到不同变压器上的感测绕组,测量通过不同导体的电流,例如在多相布置中或用于监测接地故障电流。 优选地,在施加到感测绕组的电压的反转时刻大致对电流进行采样,并且选择具有较低绝对值的样本作为与线电流成比例的采样。