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21. 发明申请

US20070280872A1 Method of growing gallium nitride crystal and gallium nitride substrate 审中-公开
标题翻译：生长氮化镓晶体和氮化镓衬底的方法
公开(公告)号：US20070280872A1
公开(公告)日：2007-12-06
申请号：US11806888
申请日：2007-06-05
申请人： Takuji Okahisa , Kensaku Motoki , Koji Uematsu , Seiji Nakahata , Ryu Hirota , Hideyuki Ijiri , Hitoshi Kasai , Shunsuke Fujita , Fumitaka Sato , Toru Matsuoka
发明人： Takuji Okahisa , Kensaku Motoki , Koji Uematsu , Seiji Nakahata , Ryu Hirota , Hideyuki Ijiri , Hitoshi Kasai , Shunsuke Fujita , Fumitaka Sato , Toru Matsuoka
IPC分类号： C30B19/00 , C01B21/06 , H01L21/322
CPC分类号： C30B29/406 , C01B21/0632 , C01P2002/54 , C30B25/183 , H01L21/0237 , H01L21/02389 , H01L21/02395 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0257 , H01L21/02609 , H01L21/02639 , H01L21/02642
摘要： The GaN facet growth method produces defect accumulating regions H on masks by forming a dotmask or a stripemask on an undersubstrate, growing GaN in a reaction furnace in vapor phase, inducing GaN crystals on exposed parts without covering the masks, inviting facets starting from verges of the masks and producing defect accumulating regions H on the mask. The defect accumulating regions H have four versions, that is, non (O), polycrystal (P), c-axis inclining single crystal (A) and orientation inversion (J). The best is the orientation inversion region (J). A sign of occurrence of the orientation inversion regions (J) is beaks of inversion orientation appearing on facets. GaN is grown on a masked undersubstrate by supplying a carbon material at a hydrocarbon partial pressure of 10 Pa to 5 kPa for 0.5 hour to 2 hour by an HVPE facet growth method without burying facets.
摘要翻译： GaN面生长方法通过在下衬底上形成网状掩模或剥离掩模来形成掩模上的缺陷积聚区H，在气相中在反应炉中生长GaN，在不覆盖掩模的情况下在暴露部分上诱导GaN晶体，掩模，并在掩模上产生缺陷累积区域H. 缺陷积聚区H具有四种形式，即非（O），多晶（P），c轴倾斜单晶（A）和取向反转（J）。最好的是取向反演区（J）。取向反转区域（J）的发生的标志是出现在面上的反转取向的喙。通过在没有掩埋面的HVPE刻面生长法中，通过以10Pa〜5kPa的烃分压供给0.5小时〜2小时的碳材料，在掩蔽的底基板上生长GaN。

22. 发明申请

US20050153471A1 Method of manufacturing group-III nitride crystal 有权
标题翻译： III族氮化物晶体的制造方法
公开(公告)号：US20050153471A1
公开(公告)日：2005-07-14
申请号：US10999338
申请日：2004-11-29
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Ryu Hirota
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Ryu Hirota
IPC分类号： C30B29/38 , C30B11/00 , C30B11/12 , C30B19/02 , C30B29/40 , H01L21/208 , H01L21/00
CPC分类号： C30B29/403 , C30B11/00 , C30B11/04 , C30B29/406
摘要： There is provided a method of manufacturing a group-III nitride crystal in which a nitrogen plasma is brought into contact with a melt containing a group-III element and an alkali metal to grow the group-III nitride crystal. Furthermore, there is also provided a method of manufacturing a group-III nitride crystal in which the group-III nitride crystal is grown on a substrate placed in a melt containing a group-III element and an alkali metal, with a minimal distance between a surface of the melt and a surface of the substrate set to be at most 50 mm.
摘要翻译：提供了一种制造III族氮化物晶体的方法，其中使氮等离子体与含有III族元素和碱金属的熔体接触以生长III族氮化物晶体。此外，还提供了一种III族氮化物晶体的制造方法，其中III族氮化物晶体在放置在含有III族元素和碱金属的熔体中的基板上生长，其中熔体的表面和基板的表面设定为至多50mm。

23. 发明授权

US08404569B2 Fabrication method and fabrication apparatus of group III nitride crystal substance 有权
公开(公告)号：US08404569B2
公开(公告)日：2013-03-26
申请号：US12949268
申请日：2010-11-18
申请人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/00
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

24. 发明授权

US08198177B2 AlxInyGal-x-yN mixture crystal substrate, method of growing same and method of producing same 有权
标题翻译： AlxInyGal-x-yN混合晶体衬底，其生长方法及其生产方法
公开(公告)号：US08198177B2
公开(公告)日：2012-06-12
申请号：US13281106
申请日：2011-10-25
申请人： Seiji Nakahata , Ryu Hirota , Kensaku Motoki , Takuji Okahisa , Kouji Uematsu
发明人： Seiji Nakahata , Ryu Hirota , Kensaku Motoki , Takuji Okahisa , Kouji Uematsu
IPC分类号： H01L21/322
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/02381 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02642 , H01L21/02647
摘要： Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0
摘要翻译：将种子以规则的图案植入到下衬底上。通过小平面生长法在混合晶体生长在种子植入的底层基底上，使Al x In y Ga 1-x-y N（0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1,0

25. 发明申请

US20110260295A1 III-Nitride Crystal Substrate and III-Nitride Semiconductor Device 有权
标题翻译： III型氮化物晶体基板和III型氮化物半导体器件
公开(公告)号：US20110260295A1
公开(公告)日：2011-10-27
申请号：US13178479
申请日：2011-07-07
申请人： Ryu Hirota , Koji Uematsu , Tomohiro Kawase
发明人： Ryu Hirota , Koji Uematsu , Tomohiro Kawase
IPC分类号： H01L29/02 , H01L21/20
CPC分类号： C30B29/403 , C30B9/00 , C30B19/00 , C30B33/10 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02625 , H01L21/02628 , H01L21/02639 , H01L33/0075 , H01L33/08 , H01L33/16 , H01L33/32
摘要： Affords methods of manufacturing bulk III-nitride crystals whereby at least the surface dislocation density is low globally. The present III-nitride crystal manufacturing method includes: a step of preparing an undersubstrate (1) containing a III-nitride seed crystal, the III-nitride seed crystal having a matrix (1s), and inversion domains (1t) in which the polarity in the directions is inverted with respect to the matrix (1s); and a step of growing a III-nitride crystal (10) onto the matrix (1s) and inversion domains (it) of the undersubstrate (1) by a liquid-phase technique; and is characterized in that a first region (10s), being where the growth rate of III-nitride crystal (10) growing onto the matrix (1s) is greater, covers second regions (10t), being where the growth rate of III-nitride crystal (10) growing onto the inversion domains (1t) is lesser.
摘要翻译：提供制造本体III族氮化物晶体的方法，其中至少表面位错密度在全局下低。本III-氮化物晶体制造方法包括：制备含有III族氮化物晶种的下衬底（1），具有基体（1s）的III族氮化物晶种和具有极性的反转畴（1t）的步骤在<0001>方向上相对于矩阵（1s）反转; 以及通过液相技术将III族氮化物晶体（10）生长到下衬底（1）的基体（1s）和反转畴（it）上的步骤; 其特征在于，生长在基体（1s）上的III族氮化物晶体（10）的生长速度更大的第一区域（10s）覆盖第二区域（10t），其中III- 生长到反向域（1t）上的氮化物晶体（10）较小。

26. 发明授权

US07794543B2 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate 有权
标题翻译：生长GaN晶体的方法，单晶GaN衬底的制造方法和单晶GaN衬底
公开(公告)号：US07794543B2
公开(公告)日：2010-09-14
申请号：US12068891
申请日：2008-02-13
申请人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
发明人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
IPC分类号： C30B25/04
CPC分类号： C30B29/406 , C30B23/002 , C30B25/02 , C30B29/403
摘要： A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).
摘要翻译：低位错密度GaN单晶衬底通过形成具有平行条纹的种子掩模，并且定期地在下衬底上周期性地对准，在面生长条件下生长GaN晶体，形成平行的小平面重叠和基于掩模的小平面谷条纹，保持小平面山丘和小平面谷，产生伴随谷的大量缺陷积聚区域（H），产生小面后的低位错单晶区域（Z），使平面生长区域（Y）在平面之后通过生长小面的作用将小面上的面陷入谷中，减少低位错单晶区（Z）和C平面生长区（Y）中的位错，并在芯（S）或大量缺陷积聚区（H）的界面（K）。

27. 发明申请

US20100090313A1 III-V Compound Crystal and Semiconductor Electronic Circuit Element 有权
标题翻译： III-V复合晶体和半导体电子电路元件
公开(公告)号：US20100090313A1
公开(公告)日：2010-04-15
申请号：US12617733
申请日：2009-11-13
申请人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L29/20
CPC分类号： C30B25/02 , C30B25/183 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02455 , H01L21/02458 , H01L21/02538 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01S5/323
摘要： Favorable-quality III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates, and can be used to manufacture semiconductor devices with good quality and at high yields. The III-V crystals are characterized by the following properties: the carrier concentration, resistivity, and dislocation density of the III-V compound crystal are uniform to within ±30% variation along the surface; the III-V compound crystal is misoriented from the c-plane such that the crystal surface does not include any region where its off-axis angle with the c-plane is 0°; and the full width at half-maximum in XRD at the crystal center of the III-V compound is not greater than 150 arcsec.
摘要翻译：即使在使用各种基板的情况下，也可以低成本地容易地获得优质的III-V晶体，而不会引起裂纹，并且可以用于以高质量和高产率制造半导体器件。 III-V晶体的特征在于以下特性：III-V族化合物晶体的载流子浓度，电阻率和位错密度均匀，沿着表面的±30％变化范围内; III-V复合晶体从c面取向偏离，使得晶体表面不包括其与c面的离轴角为0°的任何区域; 并且在III-V族化合物的晶体中心的XRD中的半峰全宽不大于150arcsec。

28. 发明申请

US20080299748A1 Group III-V Crystal 审中-公开
标题翻译： III-V族晶体
公开(公告)号：US20080299748A1
公开(公告)日：2008-12-04
申请号：US12188214
申请日：2008-08-08
申请人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/20
CPC分类号： H01L21/02378 , C30B25/02 , C30B25/18 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/0242 , H01L21/02538 , H01L21/02642 , H01S5/323 , Y10T428/12674 , Y10T428/12681
摘要： Favorable-quality III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates. The III-V crystals are obtained by manufacturing method characterized in including: a step of depositing a metal film (2) on a substrate (1); a step of heat-treating the metal film (2) in an atmosphere in which a patterning compound is present; and a step of growing a group III-V crystal (4) on the metal film after the heat treatment. Alternatively, the III-V crystal manufacturing method is characterized in including: a step of growing a group III-V compound buffer film on the metal film after the heat treatment; and a step of growing a group III-V crystal on the group III-V compound buffer film.
摘要翻译：即使在使用各种基板时，也能以低成本容易地获得优质的III-V晶体而不引起裂纹。 III-V晶体通过制造方法获得，其特征在于包括：在基板（1）上沉积金属膜（2）的步骤; 在存在图案化化合物的气氛中对金属膜（2）进行热处理的工序; 以及在热处理后在金属膜上生长III-V族晶体（4）的步骤。或者，III-V晶体制造方法的特征在于包括：在热处理后在金属膜上生长III-V族化合物缓冲膜的步骤; 以及在III-V族化合物缓冲膜上生长III-V族晶体的步骤。

29. 发明申请

US20080283968A1 Group III-Nitride Semiconductor Crystal and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device 有权
标题翻译： III-氮化物半导体晶体及其制造方法和III-III族氮化物半导体器件
公开(公告)号：US20080283968A1
公开(公告)日：2008-11-20
申请号：US11579645
申请日：2005-03-30
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
IPC分类号： H01L29/20 , C03B9/00
CPC分类号： C30B9/12 , C30B11/00 , C30B29/403 , H01L21/02389 , H01L21/02392 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02625 , H01L33/0075 , H01S5/32341
摘要： A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.
摘要翻译：一种制造III族氮化物半导体晶体的方法包括以下步骤：在反应器中容纳至少含有III族金属元素和碱金属元素的合金，将含氮物质引入反应器中，将含氮物质提供合金熔融的合金中的物质，以及生长III族氮化物半导体晶体。因此可以提供获得小吸收系数的III族氮化物半导体晶体及其制造方法，以及获得高发光强度的III族氮化物半导体器件。

30. 发明申请

US20080022921A1 Group III-Nitride Crystal, Manufacturing Method Thereof, Group III-Nitride Crystal Substrate and Semiconductor Device 有权
标题翻译：第III族氮化物晶体及其制造方法，III族氮化物晶体基板和半导体器件
公开(公告)号：US20080022921A1
公开(公告)日：2008-01-31
申请号：US11628253
申请日：2005-04-15
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
IPC分类号： C30B29/38 , C30B11/06 , C30B9/10 , H01L33/00
CPC分类号： C30B29/403 , C30B9/00 , C30B11/00 , H01L33/0075 , H01L33/32
摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.
摘要翻译：一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

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