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81. 发明申请

US20090149229A1 SLIDING MECHANISM AND PORTABLE ELECTRONIC DEVICE USING THE SAME 失效
标题翻译：使用它的滑动机构和便携式电子设备
公开(公告)号：US20090149229A1
公开(公告)日：2009-06-11
申请号：US12122743
申请日：2008-05-19
申请人： JIAN LI , JIN-XIN WANG
发明人： JIAN LI , JIN-XIN WANG
IPC分类号： H04M1/02 , H05K7/16
CPC分类号： H04M1/0237
摘要： An exemplary sliding mechanism (10) includes a main plate (11), a slide plate (12) slidably connected to the main plate (11), and a linkage module positioned between the main plate (11) and the slide plate (12). The linkage module includes an elastic member (15) and a guiding shaft (17). The elastic member (15) is sleeved on the guiding shaft (17). Two ends of the guiding shaft (17) is rotatably connected to the main plate (11) and the slide plate (12) respectively. The elastic member (15) is configured for driving the slide plate (12) and enabling the slide plate (12) to slide along the main plate (11) after the slide plate (12) is manually moved to a predetermined position with respect to the main plate (11).
摘要翻译：示例性滑动机构（10）包括主板（11），滑动连接到主板（11）的滑板（12）和位于主板（11）和滑板（12）之间的连杆模块。联动模块包括弹性构件（15）和导向轴（17）。弹性构件（15）套在引导轴（17）上。引导轴（17）的两端分别可旋转地连接到主板（11）和滑板（12）。弹性构件（15）构造成用于驱动滑板（12），并且使得滑板（12）能够在滑动板（12）被手动地移动到预定位置之后沿着主板（11）滑动主板（11）。

82. 发明申请

US20090149228A1 SLIDE MECHANISM FOR SLIDE-TYPE PORTABLE TERMINAL DEVICES 失效
标题翻译：滑动型便携式终端设备的滑动机构
公开(公告)号：US20090149228A1
公开(公告)日：2009-06-11
申请号：US12054359
申请日：2008-03-24
申请人： JIN-XIN WANG , JIAN LI
发明人： JIN-XIN WANG , JIAN LI
IPC分类号： H04M1/00
CPC分类号： H04M1/0237
摘要： An exemplary slide mechanism (100) includes a rear cover (10), a front cover (20), and a magnetic assembly (80) connected to the rear cover and the front cover. The front cover is slidably attached to the rear cover. Each of the at least one magnetic assembly includes a first magnetic member (44) and a second magnetic member (74). A magnetic force created between the first and second magnetic members forces the front cover sliding relative to the rear cover. The magnetic members are arranged such that the height of the space occupied by the magnetic members is less than an arithmetic sum of the height of each of the magnetic members
摘要翻译：示例性滑动机构（100）包括后盖（10），前盖（20）和连接到后盖和前盖的磁性组件（80）。前盖可滑动地安装在后盖上。所述至少一个磁性组件中的每一个包括第一磁性构件（44）和第二磁性构件（74）。在第一和第二磁性构件之间产生的磁力迫使前盖相对于后盖滑动。磁性构件被布置成使得由磁性构件占据的空间的高度小于每个磁性构件的高度的算术和

83. 发明申请

US20090147458A1 DOUBLE HINGE ASSEMBLY AND ELECTRONIC DEVICE USING THE SAME 失效
标题翻译：双重铰链组件和使用该双组件的电子设备
公开(公告)号：US20090147458A1
公开(公告)日：2009-06-11
申请号：US12118749
申请日：2008-05-11
申请人： JIN-XIN WANG , CHAO-ZHONG FU , JIAN LI , LIAN-CHENG HUANG
发明人： JIN-XIN WANG , CHAO-ZHONG FU , JIAN LI , LIAN-CHENG HUANG
IPC分类号： H05K7/16 , E05D3/06 , G06F1/16 , H05K7/00 , H05K5/00
CPC分类号： H04M1/022 , E05D3/12 , E05Y2900/606 , Y10T16/547
摘要： An exemplary double hinge assembly (30) includes a first hinge subassembly (31), a second hinge subassembly (32), a first bracket (35), a second bracket (36) and a connecting member. The first hinge subassembly (31) includes a first rotatable pivot shaft (311). The second hinge subassembly (32) includes a second rotatable pivot shaft (321). The first bracket (35) is fixed to the first rotatable pivot shaft (311), and the second bracket (36) is fixed to the second rotatable pivot shaft (321). The first hinge subassembly (31) and the second hinge subassembly (32) are rotatably mounted to the connecting member respectively. A rotating axis of the first rotatable pivot shaft (311) is substantially parallel to a rotating axis of the second rotatable pivot shaft (321). In addition, an electronic device (50) using the double hinge assembly (30) is also provided.
摘要翻译：示例性的双铰链组件（30）包括第一铰链子组件（31），第二铰链子组件（32），第一支架（35），第二支架（36）和连接构件。第一铰链子组件（31）包括第一可旋转枢转轴（311）。第二铰链子组件（32）包括第二可旋转枢轴（321）。第一支架（35）固定在第一可旋转轴（311）上，第二支架（36）固定在第二可转动轴（321）上。第一铰链子组件（31）和第二铰链子组件（32）分别可旋转地安装到连接构件。第一可旋转枢轴（311）的旋转轴线基本上平行于第二可旋转枢转轴（321）的旋转轴线。此外，还提供了使用双重铰链组件（30）的电子设备（50）。

84. 发明授权

US07521274B2 Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material 有权
标题翻译： GaN纳米线无催化剂生长的脉冲生长和在III族氮化物半导体散装材料中的应用
公开(公告)号：US07521274B2
公开(公告)日：2009-04-21
申请号：US11684264
申请日：2007-03-09
申请人： Stephen D. Hersee , Xin Wang , Xinyu Sun
发明人： Stephen D. Hersee , Xin Wang , Xinyu Sun
IPC分类号： H01L21/00
CPC分类号： H01L29/413 , B82Y10/00 , B82Y20/00 , B82Y30/00 , C30B29/60 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02603 , H01L21/02609 , H01L21/02612 , H01L21/0262 , H01L21/02636 , H01L21/02639 , H01L21/02642 , H01L29/045 , H01L29/0676 , H01L29/2003 , H01L29/775 , H01L31/0304 , H01L31/035236 , H01L31/184 , H01L33/18 , H01L33/24 , H01L2221/1094 , H01L2924/0002 , H01S5/1042 , H01S5/1835 , H01S5/18369 , H01S5/3428 , Y02E10/544 , Y02P70/521 , Y10S977/762 , Y10S977/816 , Y10T428/24612 , H01L2924/00
摘要： Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.
摘要翻译：示例性实施例提供包括高质量（即，无缺陷）III-N族纳米线和均匀III-N纳米线阵列的半导体器件及其可制造的可扩展工艺，其中位置，取向，横截面特征，长度和可以精确地控制每个纳米线的结晶度。可以使用脉冲生长模式来制造公开的提供约10nm至约1000微米的均匀长度的III-N族纳米线和/或纳米线阵列，其具有恒定的横截面特征，包括约10-1000nm的示例性直径。此外，可以通过聚结多个GaN纳米线和/或纳米线阵列来形成高质量的GaN衬底结构，以便制造可见的LED和激光器。此外，核 - 壳纳米线/ MQW活性结构可以通过在每个纳米线的非极性侧壁上的核 - 壳生长形成。

85. 发明申请

US20090085105A1 TRENCH MOSFET AND METHOD OF MANUFACTURE UTILIZING TWO MASKS 失效
标题翻译： TRENCH MOSFET和使用两个掩模的制造方法
公开(公告)号：US20090085105A1
公开(公告)日：2009-04-02
申请号：US11866365
申请日：2007-10-02
申请人： Shih Tzung Su , Jun Zeng , Poi Sun , Kao Way Tu , Tai Chiang Chen , Long Lv , Xin Wang
发明人： Shih Tzung Su , Jun Zeng , Poi Sun , Kao Way Tu , Tai Chiang Chen , Long Lv , Xin Wang
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/0661 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42372 , H01L29/4238 , H01L29/456 , H01L29/4925 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： A method for manufacturing a trench MOSFET semiconductor device comprises: providing a heavily doped N+ silicon substrate; forming an N type epitaxial layer; forming a thick SiO2 layer; creating P body and source area formations by ion implantation without any masks; utilizing a first mask to define openings for a trench gate and a termination; thermally growing a gate oxide layer followed by formation of a thick poly-Silicon refill layer without a mask to define a gate bus area; forming sidewall spacers; forming P+ areas; removing the sidewall spacers; depositing tungsten to fill contacts and vias; depositing a first thin barrier metal layer; depositing a first thick metal layer; utilizing a second metal mask to open a gate bus area; forming second sidewall spacers; depositing a second thin barrier metal layer; depositing a second thick metal layer; and planarizing at least the second thick metal layer and the second thin metal layer to isolate the source metal portions from gate metal portions, whereby the trench MOSFET semiconductor device is manufactured utilizing only first and second masks.
摘要翻译：一种用于制造沟槽MOSFET半导体器件的方法包括：提供重掺杂的N +硅衬底; 形成N型外延层; 形成厚的SiO 2层; 通过离子注入创建P体和源区形成，而不需要任何掩模; 利用第一掩模来限定沟槽栅极和终端的开口; 热生长栅极氧化层，随后形成厚度不含掩模的多晶硅替代层，以限定栅极总线面积; 形成侧壁间隔物; 形成P +区域; 去除侧壁间隔物; 沉积钨以填充触点和通孔; 沉积第一薄的阻挡金属层; 沉积第一厚金属层; 利用第二金属掩模打开闸总线区域; 形成第二侧壁间隔物; 沉积第二薄的阻挡金属层; 沉积第二厚金属层; 并且至少平面化第二厚金属层和第二薄金属层以将源极金属部分与栅极金属部分隔离，由此仅利用第一和第二掩模制造沟槽MOSFET半导体器件。

86. 外观设计

USD579618S1 Automated trash can 有权
公开(公告)号：USD579618S1
公开(公告)日：2008-10-28
申请号：US29293445
申请日：2007-11-23
申请人： Xin Wang , Jiangqun Chen
设计人： Xin Wang , Jiangqun Chen

87. 发明授权

US07444605B2 Generating a base curve database to reduce storage cost 失效
标题翻译：生成基线曲线数据库以降低存储成本
公开(公告)号：US07444605B2
公开(公告)日：2008-10-28
申请号：US11245550
申请日：2005-10-06
申请人： Xin Wang , Harold J. Levy , Michael N. Misheloff
发明人： Xin Wang , Harold J. Levy , Michael N. Misheloff
IPC分类号： G06F17/50
CPC分类号： G06F17/5045
摘要： An enhanced library accessible by an EDA tool can include a base curve database and a plurality of curve data sets. Each curve data set refers to a standard cell having certain timing characteristics. To determine those timing characteristics, each curve data set identifies at least one base curve (in the base curve database) as well as a starting current, a peak current, a peak voltage, and a peak time. In one embodiment, each base curve can be normalized. The base curve(s), the starting current, peak current, peak voltage, and peak time can accurately model the functioning of the IC device, e.g. represented by an I(V) curve.
摘要翻译：由EDA工具可访问的增强库可以包括基线曲线数据库和多个曲线数据集。每个曲线数据集是指具有某些定时特性的标准单元。为了确定这些时序特性，每个曲线数据集识别至少一个基本曲线（在基线曲线数据库中）以及启动电流，峰值电流，峰值电压和峰值时间。在一个实施例中，每个基本曲线可以被归一化。基本曲线，起始电流，峰值电流，峰值电压和峰值时间可以精确地模拟IC器件的功能，例如，由I（V）曲线表示。

88. 发明申请

US20080232513A1 APPARATUS AND METHOD FOR PREAMBLE DETECTION AND INTEGER CARRIER FREQUENCY OFFSET ESTIMATION 有权
标题翻译：预先检测和整体载波频偏估计的装置和方法
公开(公告)号：US20080232513A1
公开(公告)日：2008-09-25
申请号：US12044120
申请日：2008-03-07
申请人： Xin Wang , Yuuta Nakaya , Syuusaku Suzuki , Michiharu Nakamura , Hiroyuki Hayashi
发明人： Xin Wang , Yuuta Nakaya , Syuusaku Suzuki , Michiharu Nakamura , Hiroyuki Hayashi
IPC分类号： H04L27/06 , H03D1/00
CPC分类号： H04L27/2675 , H04L27/2659
摘要： This invention provides an apparatus and method for preamble detection and integer carrier frequency offset estimation, which method comprises the steps of: determining the window of useful subcarriers in preamble transformed to frequency domain based on pre-determined possible integer carrier frequency offset and the length of the preamble, so as to select the useful subcarriers; extracting a plurality of subcarrier sequences having a length equal to that of the preamble from the useful subcarriers; calculating conjugative multiplications of each subcarrier and its neighboring subcarriers in the subcarrier sequences extracted; acquiring the real part of the conjugative multiplications; calculating the cross correlations between the real part of the conjugative multiplications and known preambles modulated by DBPSK, and outputting the calculated correlation values; and detecting preamble index of a target base station with the calculated correlation values to select a target cell, and estimating integer carrier frequency offset with respect to the target base station.
摘要翻译：本发明提供了一种用于前导码检测和整数载波频偏估计的装置和方法，该方法包括以下步骤：基于预定可能的整数载波频率偏移量确定前导码转换到频域的有用子载波的窗口，前导码，以便选择有用的子载波; 从有用的子载波中提取长度等于前导码长度的多个子载波序列; 计算提取的子载波序列中每个子载波及其相邻子载波的共轭乘法; 获取共轭乘法的实部; 计算共轭乘法的实部与由DBPSK调制的已知前同步之间的互相关，并输出所计算的相关值; 以及使用所计算的相关值检测目标基站的前导码索引，以选择目标小区，并且针对目标基站估计整数载波频率偏移。

89. 发明申请

US20080195931A1 Parsing of ink annotations 审中-公开
标题翻译：解析墨迹注释
公开(公告)号：US20080195931A1
公开(公告)日：2008-08-14
申请号：US11589028
申请日：2006-10-27
申请人： Sashi Raghupathy , Paul A. Viola , Michael Shilman , Xin Wang
发明人： Sashi Raghupathy , Paul A. Viola , Michael Shilman , Xin Wang
IPC分类号： G06F17/00
CPC分类号： G06K9/00402
摘要： Annotation recognition and parsing is accomplished by first recognizing and grouping shapes such that relationships between the annotations and the underlying text and/or images can be determined. The recognition and grouping is followed by categorization of recognized annotations according to predefined types. The classification may be according to functionality, relation to content, and the like. In a third phase, the annotations are anchored to the underlying text or images they are found to be related to.
摘要翻译：注释识别和解析是通过首先识别和分组形状来实现的，使得可以确定注释和底层文本和/或图像之间的关系。识别和分组之后是根据预定义类型对所识别的注释进行分类。分类可以根据功能，与内容的关系等。在第三阶段，注释被锚定到被发现与之相关的底层文本或图像。

90. 发明申请

US20070287453A1 Method for delivering customized multimedia greeting to calling party in communication network 审中-公开
标题翻译：在通信网络中向主叫方发送定制多媒体问候的方法
公开(公告)号：US20070287453A1
公开(公告)日：2007-12-13
申请号：US11501994
申请日：2006-08-10
申请人： Matrix Xin Wang
发明人： Matrix Xin Wang
IPC分类号： H04Q7/20
CPC分类号： H04M3/42017 , H04L67/306 , H04M3/42093 , H04M3/42382 , H04M3/53 , H04M2203/053 , H04M2203/654
摘要： In a communication network, a user establishes a profile, which is stored on the network. The profile includes a default multimedia greeting and additional greetings, each associated with one or more communication identifiers listed in the profile, e.g., the identifiers are mobile phone numbers of persons who may contact the user. Each greeting is an executable data file configured to play on a mobile phone, computer, or other terminal, and may include audio and changing image multimedia content. In operation, when a calling party calls the user's terminal, the identifier of the calling party's terminal is cross-referenced to the profile. If the identifier is not in the profile, the default greeting is transmitted to the calling party from a network media server. If the identifier is in the profile, the greeting associated with the identifier is transmitted. The greeting is played until the user answers the communication.
摘要翻译：在通信网络中，用户建立存储在网络上的简档。简档包括默认多媒体问候语和附加问候语，每个问候语与配置文件中列出的一个或多个通信标识符相关联，例如，标识符是可以联系用户的人的移动电话号码。每个问候语是被配置为在移动电话，计算机或其他终端上播放的可执行数据文件，并且可以包括音频和改变图像多媒体内容。在操作中，当主叫方呼叫用户终端时，主叫方终端的标识符与该配置文件相互参照。如果标识符不在配置文件中，则从网络媒体服务器将默认问候语发送到主叫方。如果标识符在配置文件中，则发送与标识符相关联的问候。在用户应答通信之前播放问候语。

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