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91. 发明申请

US20100128377A1 Electric field assisted magnetic recording 有权
标题翻译：电场辅助磁记录
公开(公告)号：US20100128377A1
公开(公告)日：2010-05-27
申请号：US12313796
申请日：2008-11-25
申请人： Yuchen Zhou , Kowang Liu , Kunliang Zhang , Erhard Schreck
发明人： Yuchen Zhou , Kowang Liu , Kunliang Zhang , Erhard Schreck
IPC分类号： G11B5/02 , G11B5/82
CPC分类号： G11B5/1278 , G11B2005/001
摘要： We describe a system for electric field assisted magnetic recording where a recordable magnetic medium includes a magnetic recording layer of high coercivity and vertical magnetic anisotropy that is adjacent to an electrostrictive layer which can be placed in a state of stress by a electric field or which is already pre-stressed and which pre-stress can be turned into strain by an electric field. When the magnetic medium is acted on simultaneously by a magnetic writing field and an electric field, the stress in the elctrostrictive layer is transferred to a magnetostrictive layer which is the magnetic recording layer by itself or is coupled to the magnetic recording layer, whereupon the magnetic recording layer is made more isotropic and more easily written upon. Residual stresses in the electrostrictive layer can then be removed by an additional electric field of opposite sign to the stress-producing field.
摘要翻译：我们描述了一种用于电场辅助磁记录的系统，其中可记录磁介质包括与矫顽力层相邻的具有高矫顽力和垂直磁各向异性的磁记录层，该电致伸缩层可通过电场置于应力状态，已经预应力，哪些预应力可以通过电场变成应变。当磁介质通过磁场和电场同时作用时，电致伸缩层中的应力自身转移到作为磁记录层的磁致伸缩层，或耦合到磁记录层，由此磁性记录层变得更加各向同性，更容易写入。电致伸缩层中的残余应力然后可以通过与应力产生场相反的附加电场来去除。

92. 发明申请

US20100091412A1 Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus 审中-公开
标题翻译：制造磁阻效应元件和磁记录和重放装置的方法
公开(公告)号：US20100091412A1
公开(公告)日：2010-04-15
申请号：US12585852
申请日：2009-09-25
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Shuichi Murakami , Michiko Hara , Kunliang Zhang , Min Li , Erhard Schreck
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Shuichi Murakami , Michiko Hara , Kunliang Zhang , Min Li , Erhard Schreck
IPC分类号： G11B5/33 , B05D5/12 , C23C16/513 , H05H1/24
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , C23C8/36 , C23C14/081 , C23C14/5833 , C23C14/5873 , G11B5/3163 , G11B2005/3996
摘要： A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of helium ions, helium plasma, helium radicals, neon ions, neon plasma and neon radicals on the film submitted to the first treatment.
摘要翻译：提供一种制造磁阻效应元件的方法。磁阻效应元件包括包括铁磁材料的第一磁性层，包括铁磁材料的第二磁性层和设置在第一磁性层和第二磁性层之间的间隔层，间隔层具有绝缘层和导电部分穿透绝缘层。该方法包括：将膜形成为间隔层的基材; 使用包含氧分子，氧原子，氧离子，氧等离子体和氧自由基中的至少一种的气体进行第一处理; 以及使用包含氦离子，氦等离子体，氦原子，氖离子，氖等离子体和氖自由基中的至少一种的气体进行第一处理的第二处理。

93. 发明申请

US20100085666A1 Low noise magneto-resistive sensor utilizing magnetic noise cancellation 有权
标题翻译：利用磁噪声消除的低噪声磁阻传感器
公开(公告)号：US20100085666A1
公开(公告)日：2010-04-08
申请号：US12287279
申请日：2008-10-08
申请人： Yuchen Zhou , Kunliang Zhang , Yu-Hsai Chen , Tong Zhao , Moris Dovek
发明人： Yuchen Zhou , Kunliang Zhang , Yu-Hsai Chen , Tong Zhao , Moris Dovek
IPC分类号： G11B5/127 , B05D5/12
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996
摘要： A magnetic sensor, formed from a pair of magnetically free layers located on opposing sides of a non-magnetic layer, and method for its manufacture, are described. Biasing these free layers to be roughly orthogonal to one another causes them to be magnetostatically coupled in a weak antiferromagnetic mode. This enables the low frequency noise spectra of the two free layers to cancel one another. Careful control of the SH/TW ratio is an important feature of the device
摘要翻译：描述了由位于非磁性层的相对侧上的一对磁性层形成的磁传感器及其制造方法。使这些自由层彼此大致正交地使它们以弱反铁磁模式静磁耦合。这使得两个自由层的低频噪声谱彼此抵消。仔细控制SH / TW比是设备的一个重要特征

94. 发明申请

US20100073828A1 TMR device with novel free layer 有权
标题翻译： TMR器件具有新颖的自由层
公开(公告)号：US20100073828A1
公开(公告)日：2010-03-25
申请号：US12284454
申请日：2008-09-22
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/33 , G11B5/3929 , G11B2005/3996 , Y10T428/1114
摘要： A TMR sensor with a free layer having a FL1/FL2/FL3 configuration is disclosed in which FL1 is FeCo or a FeCo alloy with a thickness between 2 and 15 Angstroms. The FL2 layer is made of CoFeB or a CoFeB alloy having a thickness from 2 to 10 Angstroms. The FL3 layer is from 10 to 100 Angstroms thick and has a negative λ to offset the positive λ from FL1 and FL2 layers and is comprised of CoB or a CoBQ alloy where Q is one of Ni, Mn, Tb, W, Hf, Zr, Nb, and Si. Alternatively, the FL3 layer may be a composite such as CoB/CoFe, (CoB/CoFe)n where n is ≧2 or (CoB/CoFe)m/CoB where m is ≧1. The free layer described herein affords a high TMR ratio above 60% while achieving low values for λ (
摘要翻译：公开了具有FL1 / FL2 / FL3结构的自由层的TMR传感器，其中FL1是FeCo或厚度在2和15埃之间的FeCo合金。 FL2层由厚度为2〜10埃的CoFeB或CoFeB合金制成。 FL3层的厚度为10〜100埃，并且具有负λ以从FL1和FL2层偏移正的λ，由CoB或CoBQ合金组成，其中Q是Ni，Mn，Tb，W，Hf，Zr ，Nb和Si。或者，FL3层可以是其中n为≥2的CoB / CoFe（CoB / CoFe）n或（CoB / CoFe）m / CoB（其中m为≥1）的复合物。此处描述的自由层提供高于60％的高TMR比，同时实现λ（<5×10-6），RA（1.5欧姆/μm2）和Hc（<6Oe）的低值。

95. 发明授权

US07672088B2 Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications 有权
标题翻译： Heusler合金与插入层，以降低CPP，TMR，MRAM和其他自旋电子应用的订购温度
公开(公告)号：US07672088B2
公开(公告)日：2010-03-02
申请号：US11472126
申请日：2006-06-21
申请人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Hui-Chuan Wang , Tong Zhao
发明人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Hui-Chuan Wang , Tong Zhao
IPC分类号： G11B5/39
CPC分类号： G11B5/3983 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3909 , G11C11/16 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3295 , H01F41/183 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A spin valve structure is disclosed in which an AP1 layer and/or free layer are made of a laminated Heusler alloy having Al or FeCo insertion layers. The ordering temperature of a Heusler alloy such as Co2MnSi is thereby lowered from about 350° C. to 280° C. which becomes practical for spintronics device applications. The insertion layer is 0.5 to 5 Angstroms thick and may also be Sn, Ge, Ga, Sb, or Cr. The AP1 layer or free layer can contain one or two additional FeCo layers to give a configuration represented by FeCo/[HA/IL]nHA, [HA/IL]nHA/FeCo, or FeCo/[HA/IL]nHA/FeCo where n is an integer ≧1, HA is a Heusler alloy layer, and IL is an insertion layer. Optionally, a Heusler alloy insertion scheme is possible by doping Al or FeCo in the HA layer. For example, Co2MnSi may be co-sputtered with an Al or FeCo target or with a Co2MnAl or Co2FeSi target.
摘要翻译：公开了一种自旋阀结构，其中AP1层和/或自由层由具有Al或FeCo插入层的层状Heusler合金制成。因此，Heusler合金（例如Co 2 MnSi）的排序温度从约350℃降低到280℃，这对于自旋电子器件应用是实用的。插入层的厚度为0.5〜5埃，也可以是Sn，Ge，Ga，Sb或Cr。 AP1层或自由层可以含有一个或两个另外的FeCo层，以得到由FeCo / [HA / IL] nHA，[HA / IL] nHA / FeCo或FeCo / [HA / IL] nHA / FeCo表示的构型，其中 n是整数≥1，HA是Heusler合金层，IL是插入层。任选地，通过在HA层中掺杂Al或FeCo，Heusler合金插入方案是可能的。例如，Co2MnSi可以与Al或FeCo靶或Co2MnAl或Co2FeSi靶共溅射。

96. 发明申请

US20100037453A1 Current confining layer for GMR device 审中-公开
标题翻译： GMR设备的电流限制层
公开(公告)号：US20100037453A1
公开(公告)日：2010-02-18
申请号：US12589207
申请日：2009-10-20
申请人： Kunliang Zhang , Daniel Gabels , Min Li , Yu-Hsia Chen
发明人： Kunliang Zhang , Daniel Gabels , Min Li , Yu-Hsia Chen
IPC分类号： G11B5/127
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01L43/08 , H01L43/12 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Concerns about inadequate electromigration robustness in CCP CPP GMR devices have been overcome by adding magnesium to the current confining structures that are presently in use. In one embodiment the alumina layer, in which the current carrying copper regions are embedded, is fully replaced by a magnesia layer. In other embodiments, alumina is still used but a layer of magnesium is included within the structure before it is subjected to ion assisted oxidation.
摘要翻译：通过向当前使用的当前限制结构添加镁，克服了对CCP CPP GMR器件的电迁移鲁棒性不足的担忧。在一个实施例中，其中载流电铜区域的氧化铝层被氧化镁层完全替代。在其它实施方案中，仍然使用氧化铝，但在进行离子辅助氧化之前，该结构中包含一层镁。

97. 发明授权

US07646568B2 Ultra thin seed layer for CPP or TMR structure 有权
标题翻译：用于CPP或TMR结构的超薄种子层
公开(公告)号：US07646568B2
公开(公告)日：2010-01-12
申请号：US11317598
申请日：2005-12-23
申请人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Yu-Hsia Chen , Min Li , Cherng-Chyi Han
发明人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Yu-Hsia Chen , Min Li , Cherng-Chyi Han
IPC分类号： G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , Y10T29/49021
摘要： Improved magnetic devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of Ru on Ta. Although both Ru and Ta layers are ultra thin (between 5 and 20 Angstroms), good exchange bias between the seed and the AFM layer (IrMn about 70 Angstroms thick) is retained. This arrangement facilitates minimum shield-to-shield spacing and gives excellent performance in CPP, CCP-CPP, or TMR configurations.
摘要翻译：已经通过用Ta上的Ru的双层代替常规种子层（通常为Ta）来制造改进的磁性器件。虽然Ru和Ta层都是超薄的（5到20埃之间），但保留种子和AFM层之间良好的交换偏差（约为70埃的IrMn）。这种安排有助于最小的屏蔽间隔，并在CPP，CCP-CPP或TMR配置中提供出色的性能。

98. 发明申请

US20090257151A1 Thin seeded Co/Ni multilayer film with perpendicular anisotropy for spintronic device applications 有权
标题翻译：用于自旋电子器件应用的具有垂直各向异性的薄晶种Co / Ni多层膜
公开(公告)号：US20090257151A1
公开(公告)日：2009-10-15
申请号：US12456621
申请日：2009-06-19
申请人： Kunliang Zhang , Min Li , Yuchen Zhou , Soichi Oikawa , Kenichiro Yamada , Katsuhiko Koui
发明人： Kunliang Zhang , Min Li , Yuchen Zhou , Soichi Oikawa , Kenichiro Yamada , Katsuhiko Koui
IPC分类号： G11B5/33 , B05D5/00 , C23C14/35
CPC分类号： G01R33/098 , G01R33/1284 , G11C11/161 , H01L43/08 , H01L43/10 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T428/1107 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129 , Y10T428/1136 , Y10T428/1143
摘要： A spin valve structure for a spintronic device is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)x multilayer. The (Co/Ni)x multilayer is deposited by a low power and high Ar pressure process to avoid damaging Co/Ni interfaces and thereby preserving PMA. As a result, only a thin seed layer is required. PMA is maintained even after annealing at 220° C. for 10 hours. Examples of GMR and TMR spin valves are described and may be incorporated in spin transfer oscillators and spin transfer MRAMs. The free layer is preferably made of a FeCo alloy including at least one of Al, Ge, Si, Ga, B, C, Se, Sn, or a Heusler alloy, or a half Heusler alloy to provide high spin polarization and a low magnetic damping coefficient.
摘要翻译：公开了一种用于自旋电子器件的自旋阀结构，并且包括至少由Ta制成的复合种子层和具有fcc（111）或hcp（001）织构的金属层，以增强覆盖层（Co）中的垂直磁各向异性（PMA） / Ni）x多层。（Co / Ni）x多层通过低功率和高Ar压力工艺沉积，以避免损坏Co / Ni界面，从而保留PMA。结果，仅需要薄的种子层。即使在220℃退火10小时后也保持PMA。描述了GMR和TMR自旋阀的实例，并且可以结合在自旋转移振荡器和自旋转移MRAM中。自由层优选由包括Al，Ge，Si，Ga，B，C，Se，Sn或Heusler合金或Heusler合金中的至少一种的FeCo合金制成，以提供高自旋极化和低磁性阻尼系数。

99. 发明申请

US20090161266A1 TMR device with surfactant layer on top of cofexby/cofez inner pinned layer 有权
标题翻译：具有表面活性剂层的TMR器件位于cofexby / cofez内部固定层的顶部
公开(公告)号：US20090161266A1
公开(公告)日：2009-06-25
申请号：US12321901
申请日：2009-01-27
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： H01L43/08 , B82Y40/00 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01F41/303 , H01L43/12 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49067
摘要： A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFeXBY/CoFeZ wherein x=0 to 70 atomic %, y=0 to 30 atomic %, and z=0 to 100 atomic %. The OSL is formed by treating the CoFeZ layer with oxygen plasma. The AlOx tunnel barrier has improved uniformity of about 2% across a 6 inch wafer and can be formed from an Al layer as thin as 5 Angstroms. As a result, the Hin value can be decreased by ⅓ to about 32 Oe. A dR/R of 25% and a RA of 3 ohm-cm2 have been achieved for TMR read head applications.
摘要翻译：通过在底部自旋阀配置中的钉扎层和AlOx隧道势垒层之间插入氧表面活性剂层（OSL）来制造高性能TMR元件。钉扎层优选具有带外部被钉扎层，Ru耦合层和由CoFeXBY / CoFeZ组成的内部钉扎层的SyAP构型，其中x = 0至70原子％，y = 0至30原子％，z = 0 至100原子％。 OSL通过用氧等离子体处理CoFeZ层而形成。 AlOx隧道势垒在6英寸晶片上提高了约2％的均匀性，并且可以由薄至5埃的Al层形成。结果，Hin值可以减少1/3至约32Oe。对于TMR读头应用，已经实现了25％的dR / R和3ohm-cm 2的RA。

100. 发明申请

US20090122450A1 TMR device with low magnetostriction free layer 审中-公开
标题翻译：具低磁致伸缩层的TMR器件
公开(公告)号：US20090122450A1
公开(公告)日：2009-05-14
申请号：US11983329
申请日：2007-11-08
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/18 , G11B5/3906 , G11B5/3912 , G11B2005/3996 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114
摘要： A high performance TMR sensor is fabricated by employing a free layer comprised of CoBX with a λ between −5×10−6 and 0 on a MgOX tunnel barrier. Optionally, a FeCo/CoBX free layer configuration may be used where x is about 1 to 30 atomic %. Trilayer configurations represented by FeCo/CoFeB/CoBX, FeCo/CoBX/CoFeB, FeCoY/CoFeW/CoBX, or FeCoY/FeB/CoBX may also be employed. Alternatively, CoNiFeB or CoNiFeBM formed by co-sputtering CoB with CoNiFe or CoNiFeM, respectively, where M is V, Ti, Zr, Nb, Hf, Ta, or Mo may be substituted for CoBx in the aforementioned embodiments. A 15 to 30% in improvement in TMR ratio over a conventional CoFe/NiFe free layer is achieved while maintaining a low Hc and RA
摘要翻译：通过在MgOX隧道屏障上采用包含-5×10-6和0之间的λ的CoBX自由层来制造高性能TMR传感器。可选地，可以使用Fe约为1〜30原子％的FeCo / CoBX自由层构型。还可以使用由FeCo / CoFeB / CoBX，FeCo / CoBX / CoFeB，FeCoY / CoFeW / CoBX或FeCoY / FeB / CoBX表示的三层结构。或者，在上述实施方式中，可以将CoB与分别与CoNiFe或CoNiFeM（其中M为V，Ti，Zr，Nb，Hf，Ta或Mo）共溅射而形成的CoNiFeB或CoNiFeBM代替CoBx。在保持低Hc和RA <3欧姆 - um2的同时，实现了常规CoFe / NiFe自由层的TMR比提高15至30％。在双层或三层实施例中，通过组合CoBx（-1）和具有正λ的一个或多个层来实现-5×10 -6和5×10 -6之间的λ。

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