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11. 发明授权

US6101971A Ion implantation control using charge collection, optical emission spectroscopy and mass analysis 有权
标题翻译：离子注入控制采用电荷收集，光发射光谱和质量分析
公开(公告)号：US6101971A
公开(公告)日：2000-08-15
申请号：US218770
申请日：1998-12-22
申请人： A. Stuart Denholm , Jiong Cheng , Michael A. Graf , Peter Kellerman , George Stejic
发明人： A. Stuart Denholm , Jiong Cheng , Michael A. Graf , Peter Kellerman , George Stejic
IPC分类号： C23C14/48 , C23C14/54 , H01J37/317 , H01J37/32 , H01L21/265 , C23C16/00
CPC分类号： H01J37/32412 , C23C14/48 , C23C14/544 , H01J37/3171 , H01J37/32935 , H01J37/32972
摘要： Apparatus and method for implanting ions into a workpiece surface. A concentration of ions is produced. An optical analysis of the concentration of ions is performed and recorded. The constituency of the ion concentration is determined by comparing the optical analysis data with a database of records on a storage medium wherein the optical analysis data for given concentrations of ions have been stored for subsequent access. Ions from the ion concentration are caused to impact a workpiece surface. The dose of ions implanted into the workpiece is measured. Implantation of the workpiece is stopped once an appropriate dose has been reached.
摘要翻译：将离子注入工件表面的装置和方法。产生离子浓度。执行并记录离子浓度的光学分析。通过将光学分析数据与存储介质上的记录数据库进行比较来确定离子浓度的选区，其中已经存储给定浓度的离子的光学分析数据用于随后的存取。使离子浓度的离子撞击工件表面。测量植入到工件中的离子剂量。一旦达到适当的剂量，停止植入植入物。

12. 发明授权

US6050218A Dosimetry cup charge collection in plasma immersion ion implantation 失效
标题翻译：等离子体浸没离子注入中的剂量杯电荷收集
公开(公告)号：US6050218A
公开(公告)日：2000-04-18
申请号：US162096
申请日：1998-09-28
申请人： Jiong Chen , Peter Kellerman , A. Stuart Denholm
发明人： Jiong Chen , Peter Kellerman , A. Stuart Denholm
IPC分类号： H01J37/317 , C23C14/48 , H01J37/32 , H01L21/265 , C23C16/00
CPC分类号： H01J37/32412 , C23C14/48 , H01J37/3299 , H01J2237/31703
摘要： Method and apparatus for causing ions to impact a workpiece implantation surface. A process chamber defines a chamber interior into which one or more workpieces can be inserted for ion treatment. An energy source sets up an ion plasma within the process chamber. A support positions one or more workpieces within an interior region of the process chamber so that an implantation surface of the one or more workpieces is positioned within the ion plasma. A pulse generator in electrical communication with the workpiece support applies electrical pulses for attracting ions to the support. One or more dosimetry cups including an electrically biased ion collecting surface are disposed around the workpiece support to measure implantation current. An implantation controller monitors signals from the one or more dosimetry cups to control ion implantation of the workpiece.
摘要翻译：使离子撞击工件注入表面的方法和装置。处理室限定一个室内部，一个或多个工件可以插入其中用于离子处理。能量源在处理室内建立离子等离子体。支撑件将一个或多个工件定位在处理室的内部区域内，使得一个或多个工件的注入表面位于离子等离子体内。与工件支撑件电连通的脉冲发生器施加用于将离子吸引到支撑件的电脉冲。包括电偏置离子收集表面的一个或多个剂量学杯设置在工件支撑件周围以测量注入电流。植入控制器监测来自一个或多个剂量杯的信号以控制工件的离子注入。

13. 发明授权

US07723706B2 Horizontal and vertical beam angle measurement technique 有权
标题翻译：水平和垂直光束角度测量技术
公开(公告)号：US07723706B2
公开(公告)日：2010-05-25
申请号：US12142553
申请日：2008-06-19
申请人： George Michael Gammel , Peter Kellerman
发明人： George Michael Gammel , Peter Kellerman
IPC分类号： H01J37/317 , H01J37/244
CPC分类号： H01L21/26513 , H01J37/244 , H01J37/3171 , H01J2237/2446 , H01J2237/2449 , H01J2237/24507 , H01J2237/24528
摘要： A system and method of quickly determining the parameters of an ion beam are disclosed. An ion beam, having a width and height dimension, is made up of a number of individual beamlets. By using a plurality of detectors, deployed over the entire beam, it is possible to quickly determine the mean angle of the beam at various locations. This information can then be used to adjust the beamline components. The detector allows a small portion of the beam to enter through a narrow slit. Varying voltages are applied to a set of electrostatic deflection plates, which enable rapid determination of the incoming beam angle. By positioning a plurality of these detectors along one or both dimensions of an ion beam, a profile of the beam can be quickly generated. This profile can then be used to adjust the various beam line components so as to improve the spread of the ion beam. This adjustment can either be made manually, or via an automated controller.
摘要翻译：公开了一种快速确定离子束参数的系统和方法。具有宽度和高度尺寸的离子束由多个单独的子束组成。通过使用多个检测器，部署在整个波束上，可以快速地确定波束在各个位置处的平均角度。然后可以使用该信息来调整光束线组件。检测器允许光束的一小部分通过狭窄的狭缝进入。不同的电压被施加到一组静电偏转板，这使得能够快速确定入射光束的角度。通过沿着离子束的一个或两个尺寸定位多个这些检测器，可以快速地产生光束的轮廓。然后，该轮廓可用于调整各种束线分量，以便改善离子束的扩散。此调整可以手动进行，也可以通过自动控制器进行。

14. 发明申请

US20090314959A1 HORIZONTAL AND VERTICAL BEAM ANGLE MEASUREMENT TECHNIQUE 有权
标题翻译：水平和垂直波束角度测量技术
公开(公告)号：US20090314959A1
公开(公告)日：2009-12-24
申请号：US12142553
申请日：2008-06-19
申请人： George Michael Gammel , Peter Kellerman
发明人： George Michael Gammel , Peter Kellerman
IPC分类号： A61N5/00
CPC分类号： H01L21/26513 , H01J37/244 , H01J37/3171 , H01J2237/2446 , H01J2237/2449 , H01J2237/24507 , H01J2237/24528
摘要： A system and method of quickly determining the parameters of an ion beam are disclosed. An ion beam, having a width and height dimension, is made up of a number of individual beamlets. By using a plurality of detectors, deployed over the entire beam, it is possible to quickly determine the mean angle of the beam at various locations. This information can then be used to adjust the beamline components. The detector allows a small portion of the beam to enter through a narrow slit. Varying voltages are applied to a set of electrostatic deflection plates, which enable rapid determination of the incoming beam angle. By positioning a plurality of these detectors along one or both dimensions of an ion beam, a profile of the beam can be quickly generated. This profile can then be used to adjust the various beam line components so as to improve the spread of the ion beam. This adjustment can either be made manually, or via an automated controller.
摘要翻译：公开了一种快速确定离子束参数的系统和方法。具有宽度和高度尺寸的离子束由多个单独的子束组成。通过使用多个检测器，部署在整个波束上，可以快速地确定波束在各个位置处的平均角度。然后可以使用该信息来调整光束线组件。检测器允许光束的一小部分通过狭窄的狭缝进入。不同的电压被施加到一组静电偏转板，这使得能够快速确定入射光束的角度。通过沿着离子束的一个或两个尺寸定位多个这些检测器，可以快速地产生光束的轮廓。然后，该轮廓可用于调整各种束线分量，以便改善离子束的扩散。此调整可以手动进行，也可以通过自动控制器进行。

15. 发明申请

US20050098117A1 Segmented resonant antenna for radio frequency inductively coupled plasmas 有权
标题翻译：用于射频感应耦合等离子体的分段谐振天线
公开(公告)号：US20050098117A1
公开(公告)日：2005-05-12
申请号：US10702368
申请日：2003-11-06
申请人： William DiVergilio , Victor Benveniste , Peter Kellerman
发明人： William DiVergilio , Victor Benveniste , Peter Kellerman
IPC分类号： C23C16/00 , H01J37/08 , H01J37/32
CPC分类号： H01J37/321
摘要： An ion shower system is disclosed and comprises a plasma source operable to generate source gas ions within a chamber. The plasma source further comprises a plurality of conductor segments and a plurality of capacitors, wherein the conductor segments are serially connected through the plurality of capacitors. The plasma source further comprises an antenna drive circuit coupled to the plurality of conductor segments that provides power to the conductor segments and capacitors at a predetermined frequency. The ion shower system also comprises a source gas inlet that provides a source gas to the chamber. The conductor segments, capacitors and antenna drive circuit cooperatively provide energy to charged particles in the chamber, thereby energizing the charged particles and generating a plasma comprising source gas ions and electrons within the chamber due to ionizing collisions between the energized charged particles and the source gas.
摘要翻译：公开了一种离子淋浴系统，其包括可操作以在室内产生源气体离子的等离子体源。等离子体源还包括多个导体段和多个电容器，其中导体段通过多个电容器串联连接。等离子体源还包括耦合到多个导体段的天线驱动电路，其以预定频率向导体段和电容器提供功率。离子淋浴系统还包括向腔室提供源气体的源气体入口。导体段，电容器和天线驱动电路协同地向腔室中的带电粒子提供能量，从而由于通电带电粒子和源气体之间的电离碰撞，激发带电粒子并产生包含源室气体离子和电子的等离子体。

16. 发明申请

US20050079737A1 MEMS BASED CONTACT CONDUCTIVITY ELECTROSTATIC CHUCK 失效
标题翻译：基于MEMS的接触电导率静电卡盘
公开(公告)号：US20050079737A1
公开(公告)日：2005-04-14
申请号：US10683679
申请日：2003-10-10
申请人： Peter Kellerman , Shu Qin , Ernie Allen , Douglas Brown
发明人： Peter Kellerman , Shu Qin , Ernie Allen , Douglas Brown
IPC分类号： H01L21/683 , H01L21/66
CPC分类号： H01L21/6831 , Y10S438/964
摘要： The present invention is directed to a method for clamping and processing a semiconductor substrate using a semiconductor processing apparatus. According to one aspect of the present invention, a multi-polar electrostatic chuck and associated method is disclosed which provides heating or cooling of a substrate by thermal contact conduction between the electrostatic chuck and the substrate. The multi-polar electrostatic chuck includes a semiconductor platform having a plurality of protrusions that define gaps therebetween, wherein a surface roughness of the plurality of protrusions is less than 100 Angstroms. The electrostatic chuck further includes a voltage control system operable to control a voltage applied to the electrostatic chuck to thus control a contact heat transfer coefficient of the electrostatic chuck, wherein the heat transfer coefficient of the electrostatic chuck is primarily a function of a contact pressure between the substrate and the plurality of protrusions.
摘要翻译：本发明涉及使用半导体处理装置夹持和处理半导体衬底的方法。根据本发明的一个方面，公开了一种多极静电卡盘和相关方法，其通过静电卡盘和基板之间的热接触传导来提供加热或冷却基板。多极静电卡盘包括具有多个突起的半导体平台，所述突起在其间形成间隙，其中多个突起的表面粗糙度小于100埃。静电卡盘还包括电压控制系统，其可操作以控制施加到静电卡盘的电压，从而控制静电卡盘的接触传热系数，其中静电卡盘的传热系数主要是介于静电卡盘之间的接触压力的函数基板和多个突起。

17. 发明申请

US20050057881A1 Clamping and de-clamping semiconductor wafers on a J-R electrostatic chuck having a micromachined surface by using force delay in applying a single-phase square wave AC clamping voltage 有权
标题翻译：在具有微加工表面的J-R静电卡盘上夹紧和去夹紧半导体晶片，通过在施加单相方波交流钳位电压时使用力延迟
公开(公告)号：US20050057881A1
公开(公告)日：2005-03-17
申请号：US10661180
申请日：2003-09-12
申请人： Shu Qin , Peter Kellerman
发明人： Shu Qin , Peter Kellerman
IPC分类号： H01L21/683 , H01H1/00 , H02B1/00
CPC分类号： H01L21/6833
摘要： The present invention is directed to a method and a system for clamping a wafer to a J-R electrostatic chuck using a single-phase square wave AC clamping voltage. The method comprises determining a single-phase square wave clamping voltage for the J-R electrostatic chuck, wherein the determination is based, at least in part, on a minimum residual clamping force associated with the wafer and the electrostatic chuck and a surface topography of a leaky dielectric layer associated therewith. The wafer is placed on the electrostatic chuck; and the determined clamping voltage is applied to the electrostatic chuck, therein electrostatically clamping the wafer to the electrostatic chuck, wherein at least the minimum residual clamping force is maintained during a polarity switch of the single-phase square wave clamping voltage. The determination of the surface topography comprises a first gap and a second gap between the wafer and the electrostatic chuck and an island area ratio, wherein a difference in RC time constants associated with the respective first gap and second gap is provided such that at least the minimum residual clamping force is maintained during the polarity switch. Upon removal of the square wave clamping voltage, the de-clamping time is substantially reduced, and corresponds to the pulse width of the square wave clamping voltage.
摘要翻译：本发明涉及一种使用单相方波交流钳位电压将晶片夹持到J-R静电卡盘的方法和系统。该方法包括确定用于JR静电卡盘的单相方波钳位电压，其中所述确定至少部分地基于与晶片和静电卡盘相关联的最小剩余夹持力和泄漏的表面形貌与之相关的电介质层。将晶片放置在静电卡盘上; 并且将确定的钳位电压施加到静电卡盘，其中将晶片静电夹持到静电卡盘，其中在单相方波钳位电压的极性开关期间至少保持最小的剩余钳位力。表面形貌的确定包括晶片和静电卡盘之间的第一间隙和第二间隙以及岛面积比，其中提供与相应的第一间隙和第二间隙相关联的RC时间常数的差异，使得至少在极性开关期间维持最小的剩余夹紧力。在去除方波钳位电压时，去夹紧时间大大降低，并且对应于方波钳位电压的脉冲宽度。

18. 发明申请

US20050041364A1 Mems based multi-polar electrostatic chuck 失效
标题翻译：基于Mems的多极静电吸盘
公开(公告)号：US20050041364A1
公开(公告)日：2005-02-24
申请号：US10642939
申请日：2003-08-18
申请人： Peter Kellerman , Shu Oin , Douglas Brown
发明人： Peter Kellerman , Shu Oin , Douglas Brown
IPC分类号： H01L21/683 , H02H1/00
CPC分类号： H01L21/6875 , H01L21/6833
摘要： The present invention is directed to a semiconductor processing apparatus and a method for clamping a semiconductor substrate and controlling a heat transfer associated therewith. According to one aspect of the present invention, a multi-polar electrostatic chuck and associated method is disclosed which provides a controlled and uniform heat transfer coefficient across a surface thereof. The multi-polar electrostatic chuck comprises a semiconductor platform having a plurality of protrusions that define gaps therebetween, wherein a distance or depth of the gaps is uniform and associated with a mean free path of the cooling gas therein. The electrostatic chuck is permits a control of a backside pressure of a cooling gas within the plurality of gaps to thus control a heat transfer coefficient of the cooling gas. The plurality of protrusions further provide a uniform contact surface, wherein a contact conductivity between the plurality of protrusions and the substrate is controllable and significantly uniform across the substrate.
摘要翻译：本发明涉及一种用于夹持半导体衬底并控制与之相关的热传递的半导体处理装置和方法。根据本发明的一个方面，公开了一种多极静电卡盘和相关方法，其提供跨越其表面的受控且均匀的传热系数。多极静电卡盘包括具有限定间隙的多个突起的半导体平台，其中间隙的距离或深度是均匀的，并且与其中的冷却气体的平均自由路径相关联。静电吸盘可以控制多个间隙内的冷却气体的背侧压力，从而控制冷却气体的传热系数。多个突起还提供均匀的接触表面，其中多个突起和基底之间的接触导电性在基底上是可控的和显着均匀的。

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