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1. 发明申请

US20050099758A1 METHOD OF MAKING A MEMS ELECTROSTATIC CHUCK 失效
标题翻译：制造MEMS静电卡盘的方法
公开(公告)号：US20050099758A1
公开(公告)日：2005-05-12
申请号：US10695153
申请日：2003-10-28
申请人： Peter Kellerman , Shu Qin , Ernie Allen , Douglas Brown
发明人： Peter Kellerman , Shu Qin , Ernie Allen , Douglas Brown
IPC分类号： H01L21/683 , H02B1/00
CPC分类号： H01L21/6833
摘要： The present invention is directed to a method of forming a clamping plate for a multi-polar electrostatic chuck. The method comprises forming a first electrically conductive layer over a semiconductor platform and defining a plurality of portions of the first electrically conductive layer which are electrically isolated from one another. A first electrically insulative layer is formed over the first electrically conductive layer, the first electrically insulative layer comprising a top surface having a plurality of MEMS protrusions extending a first distance therefrom. A plurality of poles are furthermore electrically connected to the respective plurality of portions of the first electrically conductive layer, wherein a voltage applied between the plurality of poles is operable to induce an electrostatic force in the clamping plate.
摘要翻译：本发明涉及一种形成多极静电卡盘夹紧板的方法。该方法包括在半导体平台上形成第一导电层，并且限定彼此电隔离的第一导电层的多个部分。第一电绝缘层形成在第一导电层之上，第一电绝缘层包括具有从其延伸第一距离的多个MEMS突起的顶表面。多个极还电连接到第一导电层的相应多个部分，其中施加在多个极之间的电压可操作以在夹持板中引起静电力。

2. 发明申请

US20050079737A1 MEMS BASED CONTACT CONDUCTIVITY ELECTROSTATIC CHUCK 失效
标题翻译：基于MEMS的接触电导率静电卡盘
公开(公告)号：US20050079737A1
公开(公告)日：2005-04-14
申请号：US10683679
申请日：2003-10-10
申请人： Peter Kellerman , Shu Qin , Ernie Allen , Douglas Brown
发明人： Peter Kellerman , Shu Qin , Ernie Allen , Douglas Brown
IPC分类号： H01L21/683 , H01L21/66
CPC分类号： H01L21/6831 , Y10S438/964
摘要： The present invention is directed to a method for clamping and processing a semiconductor substrate using a semiconductor processing apparatus. According to one aspect of the present invention, a multi-polar electrostatic chuck and associated method is disclosed which provides heating or cooling of a substrate by thermal contact conduction between the electrostatic chuck and the substrate. The multi-polar electrostatic chuck includes a semiconductor platform having a plurality of protrusions that define gaps therebetween, wherein a surface roughness of the plurality of protrusions is less than 100 Angstroms. The electrostatic chuck further includes a voltage control system operable to control a voltage applied to the electrostatic chuck to thus control a contact heat transfer coefficient of the electrostatic chuck, wherein the heat transfer coefficient of the electrostatic chuck is primarily a function of a contact pressure between the substrate and the plurality of protrusions.
摘要翻译：本发明涉及使用半导体处理装置夹持和处理半导体衬底的方法。根据本发明的一个方面，公开了一种多极静电卡盘和相关方法，其通过静电卡盘和基板之间的热接触传导来提供加热或冷却基板。多极静电卡盘包括具有多个突起的半导体平台，所述突起在其间形成间隙，其中多个突起的表面粗糙度小于100埃。静电卡盘还包括电压控制系统，其可操作以控制施加到静电卡盘的电压，从而控制静电卡盘的接触传热系数，其中静电卡盘的传热系数主要是介于静电卡盘之间的接触压力的函数基板和多个突起。

3. 发明申请

US20050052817A1 CLAMPING AND DE-CLAMPING SEMICONDUCTOR WAFERS ON AN ELECTROSTATIC CHUCK USING WAFER INERTIAL CONFINEMENT BY APPLYING A SINGLE-PHASE SQUARE WAVE AC CLAMPING VOLTAGE 失效
标题翻译：通过应用单相波形交流钳位电压，使用波形器实时限制的静电卡盘上的钳位和去钳位半导体波形
公开(公告)号：US20050052817A1
公开(公告)日：2005-03-10
申请号：US10657449
申请日：2003-09-08
申请人： Peter Kellerman , Shu Qin , William DiVergilio
发明人： Peter Kellerman , Shu Qin , William DiVergilio
IPC分类号： H01L21/683 , H02N13/00 , H01H1/00
CPC分类号： H01L21/6833 , H02N13/00
摘要： The present invention is directed to a method for clamping a wafer to an electrostatic chuck using a single-phase square wave AC clamping voltage. The method comprises determining a single-phase square wave clamping voltage for the electrostatic chuck, wherein the determination is based, at least in part, on an inertial response time of the wafer. The wafer is placed on the electrostatic chuck, wherein a gap between the electrostatic chuck and the wafer is defined. The determined single-phase square wave clamping voltage is then applied, wherein the wafer is generally clamped to the electrostatic chuck within a predetermined distance, while an amount of electrostatic charge is generally not allowed to accumulate, thereby enabling a fast de-clamping of the wafer.
摘要翻译：本发明涉及使用单相方波交流钳位电压将晶片夹持到静电卡盘的方法。该方法包括确定用于静电卡盘的单相方波钳位电压，其中所述确定至少部分地基于晶片的惯性响应时间。将晶片放置在静电卡盘上，其中定义静电卡盘和晶片之间的间隙。然后施加确定的单相方波钳位电压，其中晶片通常在预定距离内被夹持在静电卡盘上，而静电电荷的量通常不允许累积，从而能够快速地去夹紧晶圆。

4. 发明申请

US20050057881A1 Clamping and de-clamping semiconductor wafers on a J-R electrostatic chuck having a micromachined surface by using force delay in applying a single-phase square wave AC clamping voltage 有权
标题翻译：在具有微加工表面的J-R静电卡盘上夹紧和去夹紧半导体晶片，通过在施加单相方波交流钳位电压时使用力延迟
公开(公告)号：US20050057881A1
公开(公告)日：2005-03-17
申请号：US10661180
申请日：2003-09-12
申请人： Shu Qin , Peter Kellerman
发明人： Shu Qin , Peter Kellerman
IPC分类号： H01L21/683 , H01H1/00 , H02B1/00
CPC分类号： H01L21/6833
摘要： The present invention is directed to a method and a system for clamping a wafer to a J-R electrostatic chuck using a single-phase square wave AC clamping voltage. The method comprises determining a single-phase square wave clamping voltage for the J-R electrostatic chuck, wherein the determination is based, at least in part, on a minimum residual clamping force associated with the wafer and the electrostatic chuck and a surface topography of a leaky dielectric layer associated therewith. The wafer is placed on the electrostatic chuck; and the determined clamping voltage is applied to the electrostatic chuck, therein electrostatically clamping the wafer to the electrostatic chuck, wherein at least the minimum residual clamping force is maintained during a polarity switch of the single-phase square wave clamping voltage. The determination of the surface topography comprises a first gap and a second gap between the wafer and the electrostatic chuck and an island area ratio, wherein a difference in RC time constants associated with the respective first gap and second gap is provided such that at least the minimum residual clamping force is maintained during the polarity switch. Upon removal of the square wave clamping voltage, the de-clamping time is substantially reduced, and corresponds to the pulse width of the square wave clamping voltage.
摘要翻译：本发明涉及一种使用单相方波交流钳位电压将晶片夹持到J-R静电卡盘的方法和系统。该方法包括确定用于JR静电卡盘的单相方波钳位电压，其中所述确定至少部分地基于与晶片和静电卡盘相关联的最小剩余夹持力和泄漏的表面形貌与之相关的电介质层。将晶片放置在静电卡盘上; 并且将确定的钳位电压施加到静电卡盘，其中将晶片静电夹持到静电卡盘，其中在单相方波钳位电压的极性开关期间至少保持最小的剩余钳位力。表面形貌的确定包括晶片和静电卡盘之间的第一间隙和第二间隙以及岛面积比，其中提供与相应的第一间隙和第二间隙相关联的RC时间常数的差异，使得至少在极性开关期间维持最小的剩余夹紧力。在去除方波钳位电压时，去夹紧时间大大降低，并且对应于方波钳位电压的脉冲宽度。

5. 发明申请

US20050254932A1 Wafer scanning system with reciprocating rotary motion utilizing springs and counterweights 失效
标题翻译：使用弹簧和配重的往复旋转运动的晶圆扫描系统
公开(公告)号：US20050254932A1
公开(公告)日：2005-11-17
申请号：US11099022
申请日：2005-04-05
申请人： Peter Kellerman , Victor Benveniste , Kourosh Saadatmand , Mehran Asdigha , Douglas Brown
发明人： Peter Kellerman , Victor Benveniste , Kourosh Saadatmand , Mehran Asdigha , Douglas Brown
IPC分类号： B66F9/00 , H01L21/00
CPC分类号： H01L21/67069 , H01J2237/20228 , H01J2237/31701
摘要： The present invention is directed to a scanning apparatus and method for processing a workpiece, wherein the scanning apparatus comprises a wafer arm and moving arm fixedly coupled to one another, wherein the wafer arm and moving arm are operable to rotate about a first axis. An end effector, whereon the workpiece resides, is coupled to the wafer arm. A rotational shaft couples the wafer arm and moving arm to a first actuator, wherein the first actuator provides a rotational force to the shaft. A momentum balance mechanism is coupled to the shaft and is operable to generally reverse the rotational direction of the shaft. The momentum balance mechanism comprises one or more fixed spring elements operable to provide a force to a moving spring element coupled to the moving arm. A controller is further operable to maintain a generally constant translational velocity of the end effector within a predetermined scanning range.
摘要翻译：本发明涉及一种用于处理工件的扫描装置和方法，其中扫描装置包括彼此固定地连接的晶片臂和移动臂，其中晶片臂和移动臂可操作以围绕第一轴线旋转。工件所在的端部执行器与晶片臂连接。旋转轴将晶片臂和移动臂联接到第一致动器，其中第一致动器向轴提供旋转力。动量平衡机构联接到轴上并且可操作地大体上使轴的旋转方向反转。动量平衡机构包括一个或多个固定弹簧元件，其可操作以向耦合到移动臂的移动弹簧元件提供力。控制器还可操作以将末端执行器的大致恒定的平移速度保持在预定扫描范围内。

6. 发明申请

US20050041364A1 Mems based multi-polar electrostatic chuck 失效
标题翻译：基于Mems的多极静电吸盘
公开(公告)号：US20050041364A1
公开(公告)日：2005-02-24
申请号：US10642939
申请日：2003-08-18
申请人： Peter Kellerman , Shu Oin , Douglas Brown
发明人： Peter Kellerman , Shu Oin , Douglas Brown
IPC分类号： H01L21/683 , H02H1/00
CPC分类号： H01L21/6875 , H01L21/6833
摘要： The present invention is directed to a semiconductor processing apparatus and a method for clamping a semiconductor substrate and controlling a heat transfer associated therewith. According to one aspect of the present invention, a multi-polar electrostatic chuck and associated method is disclosed which provides a controlled and uniform heat transfer coefficient across a surface thereof. The multi-polar electrostatic chuck comprises a semiconductor platform having a plurality of protrusions that define gaps therebetween, wherein a distance or depth of the gaps is uniform and associated with a mean free path of the cooling gas therein. The electrostatic chuck is permits a control of a backside pressure of a cooling gas within the plurality of gaps to thus control a heat transfer coefficient of the cooling gas. The plurality of protrusions further provide a uniform contact surface, wherein a contact conductivity between the plurality of protrusions and the substrate is controllable and significantly uniform across the substrate.
摘要翻译：本发明涉及一种用于夹持半导体衬底并控制与之相关的热传递的半导体处理装置和方法。根据本发明的一个方面，公开了一种多极静电卡盘和相关方法，其提供跨越其表面的受控且均匀的传热系数。多极静电卡盘包括具有限定间隙的多个突起的半导体平台，其中间隙的距离或深度是均匀的，并且与其中的冷却气体的平均自由路径相关联。静电吸盘可以控制多个间隙内的冷却气体的背侧压力，从而控制冷却气体的传热系数。多个突起还提供均匀的接触表面，其中多个突起和基底之间的接触导电性在基底上是可控的和显着均匀的。

7. 发明申请

US20070295901A1 METHODS AND SYSTEMS FOR TRAPPING ION BEAM PARTICLES AND FOCUSING AN ION BEAM 有权
标题翻译：用于捕获离子束颗粒和聚焦离子束的方法和系统
公开(公告)号：US20070295901A1
公开(公告)日：2007-12-27
申请号：US11739934
申请日：2007-04-25
申请人： Peter Kellerman , Victor Benveniste , Alexander Perel , Brian Freer , Michael Graf
发明人： Peter Kellerman , Victor Benveniste , Alexander Perel , Brian Freer , Michael Graf
IPC分类号： B01D59/44
CPC分类号： H01J37/3171 , H01J37/12 , H01J2237/022 , H01J2237/049
摘要： A focusing particle trap system for ion implantation comprising an ion beam source that generates an ion beam, a beam line assembly that receives the ion beam from the ion beam source comprising a mass analyzer that selectively passes selected ions, a focusing electrostatic particle trap that receives the ion beam and removes particles from the ion beam comprising an entrance electrode comprising an entrance aperture and biased to a first base voltage, wherein the first surface of the entrance electrode is facing away from a center electrode and is approximately flat, wherein the second surface of the entrance electrode is facing toward the center electrode and is concave, wherein the center electrode is positioned a distance downstream from the entrance electrode comprising a center aperture and biased to a center voltage, wherein the center voltage is less than the first base voltage, wherein the first surface of the center electrode is facing toward the entrance electrode and is convex, wherein the second surface of the center electrode is facing away from the entrance electrode and is approximately flat, an exit electrode positioned a distance downstream from the center electrode comprising an exit aperture and biased to a second base voltage, and wherein the first surface of the exit electrode is facing toward the center electrode and is approximately flat, wherein the second surface of the exit electrode is facing away from the center electrode and is approximately flat, wherein a first electrostatic field is generated from the entrance electrode toward the center electrode and a second electrostatic field is generated from the exit electrode toward the center electrode; wherein the second base voltage is greater than the center voltage, and an end station that is downstream from the beam line assembly and receives the ion beam.
摘要翻译：一种用于离子注入的聚焦粒子捕获系统，包括产生离子束的离子束源，接收来自离子束源的离子束的束线组件，该束束组件包括选择性地通过选定离子的质量分析器，接收离子束并且从离子束中除去包含入口电极并且被偏置到第一基极电压的入口电极的颗粒，其中入口电极的第一表面背离中心电极并且近似平坦，其中第二表面所述入口电极面向所述中心电极并且是凹形的，其中所述中心电极位于与所述入口电极的下游距离的位置，所述入口电极包括中心孔并被偏压到中心电压，其中所述中心电压小于所述第一基极电压，其中所述中心电极的所述第一表面面向所述入口电极并且被连接 vex，其中所述中心电极的所述第二表面背离所述入口电极并且近似平坦，所述出口电极在所述中心电极的下游距离包括出口孔并且被偏压到第二基极电压，并且其中所述第一表面所述出射电极的面向所述中心电极并且近似平坦，其中所述出射电极的所述第二表面背离所述中心电极并且近似平坦，其中从所述入射电极朝向所述中心电极产生第一静电场并且从出射电极向中心电极产生第二静电场; 其中所述第二基极电压大于所述中心电压，以及在所述束线组件的下游并接收所述离子束的端站。

8. 发明申请

US20060145096A1 ION BEAM SCANNING CONTROL METHODS AND SYSTEMS FOR ION IMPLANTATION UNIFORMITY 有权
标题翻译：离子束扫描控制方法和系统用于离子植入均匀性
公开(公告)号：US20060145096A1
公开(公告)日：2006-07-06
申请号：US11029052
申请日：2005-01-04
申请人： Victor Benveniste , Peter Kellerman , William DiVergilio
发明人： Victor Benveniste , Peter Kellerman , William DiVergilio
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/31703
摘要： Methods are provided for calibrating an ion beam scanner in an ion implantation system, comprising measuring a plurality of initial current density values at a plurality of locations along a scan direction, where the values individually correspond to one of a plurality of initial voltage scan intervals and one of a corresponding plurality of initial scan time values, creating a system of linear equations based on the measured initial current density values and the initial voltage scan intervals, and determining a set of scan time values that correspond to a solution to the system of linear equations that reduces current density profile deviations. A calibration system is provided for calibrating an ion beam scanner in an ion implantation system, comprising a dosimetry system and a control system.
摘要翻译：提供了用于在离子注入系统中校准离子束扫描器的方法，包括在沿着扫描方向的多个位置处测量多个初始电流密度值，其中所述值分别对应于多个初始电压扫描间隔中的一个，以及相应的多个初始扫描时间值中的一个，基于测量的初始电流密度值和初始电压扫描间隔创建线性方程组，并且确定与线性系统的解的对应的一组扫描时间值减小电流密度分布偏差的方程式。提供校准系统用于在离子注入系统中校准离子束扫描器，包括剂量测定系统和控制系统。

9. 发明申请

US20070044717A1 Segmented resonant antenna for radio frequency inductively coupled plasmas 审中-公开
标题翻译：用于射频感应耦合等离子体的分段谐振天线
公开(公告)号：US20070044717A1
公开(公告)日：2007-03-01
申请号：US11544971
申请日：2006-10-06
申请人： William DiVergilio , Victor Benveniste , Peter Kellerman
发明人： William DiVergilio , Victor Benveniste , Peter Kellerman
IPC分类号： C23C16/00
CPC分类号： H01J37/321
摘要： An ion shower system is disclosed and comprises a plasma source operable to generate source gas ions within a chamber. The plasma source further comprises a plurality of conductor segments and a plurality of capacitors, wherein the conductor segments are serially connected through the plurality of capacitors. The plasma source further comprises an antenna drive circuit coupled to the plurality of conductor segments that provides power to the conductor segments and capacitors at a predetermined frequency. The ion shower system also comprises a source gas inlet that provides a source gas to the chamber. The conductor segments, capacitors and antenna drive circuit cooperatively provide energy to charged particles in the chamber, thereby energizing the charged particles and generating a plasma comprising source gas ions and electrons within the chamber due to ionizing collisions between the energized charged particles and the source gas.
摘要翻译：公开了一种离子淋浴系统，其包括可操作以在室内产生源气体离子的等离子体源。等离子体源还包括多个导体段和多个电容器，其中导体段通过多个电容器串联连接。等离子体源还包括耦合到多个导体段的天线驱动电路，其以预定频率向导体段和电容器提供功率。离子淋浴系统还包括向腔室提供源气体的源气体入口。导体段，电容器和天线驱动电路协同地向腔室中的带电粒子提供能量，从而由于通电带电粒子和源气体之间的电离碰撞，激发带电粒子并产生包含源室气体离子和电子的等离子体。

10. 发明申请

US20070187619A1 ELECTROMAGNET WITH ACTIVE FIELD CONTAINMENT 有权
标题翻译：具有活动场地容纳的电磁铁
公开(公告)号：US20070187619A1
公开(公告)日：2007-08-16
申请号：US11276128
申请日：2006-02-15
申请人： Peter Kellerman , Keneth Purser
发明人： Peter Kellerman , Keneth Purser
IPC分类号： H01J37/317 , H01J37/141
CPC分类号： H01J37/05 , H01J37/141 , H01J37/1472 , H01J37/3171 , H01J2237/0042 , H01J2237/057 , H01J2237/141 , H01J2237/142 , H01J2237/1508 , H01J2237/152 , H01J2237/31701 , H01J2237/31705
摘要： An electromagnet and related ion implanter system including active field containment are disclosed. The electromagnet provides a dipole magnetic field within a tall, large gap with minimum distortion and degradation of strength. In one embodiment, an electromagnet for modifying an ion beam includes: a ferromagnetic box structure including six sides; an opening in each of a first side and a second opposing side of the ferromagnetic box structure for passage of the ion beam therethrough; and a plurality of current-carrying wires having a path along an inner surface of the ferromagnetic box structure, the inner surface including the first side and the second opposing side and a third side and a fourth opposing side, wherein the plurality of current-carrying wires are positioned to pass around each of the openings of the first and second opposing sides.
摘要翻译：公开了一种包括活性场容纳的电磁体和相关离子注入机系统。电磁铁在高大的间隙内提供偶极磁场，具有最小的变形和强度的降低。在一个实施例中，用于修改离子束的电磁体包括：包括六个边的铁磁盒结构; 所述铁磁盒结构的第一侧和第二相对侧中的每一个中的开口用于使所述离子束通过其中; 以及多个载流线，其具有沿铁磁箱结构的内表面的路径，内表面包括第一侧和第二相对侧，以及第三侧和第四相对侧，其中多个载流电线定位成绕过第一和第二相对侧的每个开口。

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