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21. 发明授权

US07915793B2 Thin film tuning-fork type inflection resonator and electric signal processing element 失效
标题翻译：薄膜音叉型变形谐振器和电信号处理元件
公开(公告)号：US07915793B2
公开(公告)日：2011-03-29
申请号：US11670081
申请日：2007-02-01
申请人： Atsushi Isobe , Nobuhiko Shibagaki , Kengo Asai , Hisanori Matsumoto
发明人： Atsushi Isobe , Nobuhiko Shibagaki , Kengo Asai , Hisanori Matsumoto
IPC分类号： H03H9/21 , H01L41/08
CPC分类号： H03H9/21 , H03H2003/026
摘要： A compact resonator has a wide bandwidth and a small variation of the specific vibration frequency. The resonator is a thin film tuning-fork type inflection resonator in which a thin film made of a piezoelectric material is formed on a substrate on which a lower electrode is formed, and an upper electrode is formed on the piezoelectric thin film.
摘要翻译：紧凑型谐振器具有宽带宽和特定振动频率的小变化。谐振器是薄膜音叉式拐点共振器，其中在其上形成有下电极的基板上形成由压电材料制成的薄膜，并且在压电薄膜上形成上电极。

22. 发明申请

US20080024042A1 THIN FILM PIEZOELECTRIC BULK ACOUSTIC WAVE RESONATOR AND RADIO FREQUENCY FILTER USING THE SAME 失效
标题翻译：薄膜压电体积波形谐振器和无线电频率滤波器
公开(公告)号：US20080024042A1
公开(公告)日：2008-01-31
申请号：US11627858
申请日：2007-01-26
申请人： Atsushi Isobe , Kengo Asai , Hisanori Matsumoto , Nobuhiko Shibagaki
发明人： Atsushi Isobe , Kengo Asai , Hisanori Matsumoto , Nobuhiko Shibagaki
IPC分类号： H01L41/047
CPC分类号： H03H9/02228 , H03H3/04 , H03H9/173 , H03H9/175 , H03H9/564 , H03H9/568 , H03H9/605 , H03H2003/0428 , H03H2003/0457 , H03H2003/0471
摘要： An object of the present invention is to provide an inexpensive thin film piezoelectric bulk acoustic wave resonator that allows fine-tuning of a resonant frequency. Another object is to provide an inexpensive filter with dramatically improved frequency characteristics, using thin film piezoelectric bulk acoustic wave resonators that can be formed on one substrate. A thin film piezoelectric bulk acoustic wave resonator of the present invention has a laminated structure including a piezoelectric thin film, and a first metal electrode film and a second metal electrode film between which part of the piezoelectric thin film is sandwiched; the first metal electrode film has a plurality of holes formed on an electrode plane opposite to the second metal electrode film and having a depth equivalent to at least the thickness of the first metal electrode film; and if a combined thickness of top and bottom electrode layers and the piezoelectric thin film is ht, the covering ratio σ of the electrode plane of the first metal electrode film satisfies a condition 0
摘要翻译：本发明的目的是提供一种廉价的薄膜压电体声波谐振器，其允许谐振频率的微调。另一个目的是提供一种具有显着改善的频率特性的便宜的滤波器，使用可以在一个基板上形成的薄膜压电体声波谐振器。本发明的薄膜压电体声波谐振器具有包括压电薄膜和第一金属电极薄膜和第二金属电极薄膜的叠层结构，压电薄膜的一部分夹在其间; 所述第一金属电极膜具有形成在与所述第二金属电极膜相反的电极面上并且具有至少等于所述第一金属电极膜的厚度的深度的多个孔; 并且如果顶部和底部电极层和压电薄膜的组合厚度为ht，则对于每1.28ht间距，第一金属电极膜的电极平面的覆盖比sigma满足条件0 <σ<1。

23. 发明授权

US07242273B2 RF-MEMS switch and its fabrication method 失效
标题翻译： RF-MEMS开关及其制造方法
公开(公告)号：US07242273B2
公开(公告)日：2007-07-10
申请号：US10902573
申请日：2004-07-30
申请人： Atsushi Isobe , Akihisa Terano , Kengo Asai , Hiroyuki Uchiyama , Hisanori Matsumoto
发明人： Atsushi Isobe , Akihisa Terano , Kengo Asai , Hiroyuki Uchiyama , Hisanori Matsumoto
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , H01H1/20 , H01P1/127
摘要： The MEMS switch comprises a first anchor formed over a substrate, a first spring connected to the first anchor, an upper electrode which is connected to the first spring and makes a motion above the substrate, elastically deforming the first spring, a lower electrode formed over the substrate, positioned under the upper electrode, a second spring connected to the upper electrode, and a second anchor connected to the second spring. When voltage is applied between the upper and lower electrodes and the upper electrode makes a downward motion, the second anchor is brought into contact with the substrate. As a result, the second spring is elastically deformed. When the upper electrode is subsequently brought into contact with the lower electrode, thereby the upper and lower electrodes are electrically connected. The first and second anchors, first and second springs, and upper electrode are formed of identical metal in integral structure.
摘要翻译： MEMS开关包括形成在衬底上的第一锚，连接到第一锚的第一弹簧，连接到第一弹簧并在衬底上方进行运动的上电极，使第一弹簧弹性变形，位于上电极下方的基板，连接到上电极的第二弹簧和连接到第二弹簧的第二锚固件。当在上下电极之间施加电压并且上电极向下运动时，使第二锚与基板接触。结果，第二弹簧弹性变形。当上电极随后与下电极接触时，上电极和下电极电连接。第一和第二锚固件，第一和第二弹簧以及上部电极由整体结构相同的金属形成。

24. 发明授权

US07221242B2 Bulk acoustic wave resonator and manufacturing method thereof, filter using the same, semiconductor integrated circuit device using the same, and high frequency module using the same 失效
标题翻译：体声波谐振器及其制造方法，使用其的滤波器，使用其的半导体集成电路器件，以及使用其的高频模块
公开(公告)号：US07221242B2
公开(公告)日：2007-05-22
申请号：US11067374
申请日：2005-02-28
申请人： Kengo Asai , Hisanori Matsumoto , Atsushi Isobe , Mitsutaka Hikita
发明人： Kengo Asai , Hisanori Matsumoto , Atsushi Isobe , Mitsutaka Hikita
IPC分类号： H03H9/00 , H01L41/00
CPC分类号： H03H3/02 , H03H9/0542 , H03H9/0571 , H03H9/174 , H03H9/564 , H03H9/706
摘要： A bulk acoustic wave resonator in which the problem of the technology for forming the diaphragm structure is resolved, which is more compact and improved the frequency accuracy, and the manufacturing method thereof, a filter using the same, a semiconductor integrated circuit device using the same, and a high frequency module using the same are provided. The bulk acoustic wave resonator according to the present invention comprises a substrate having a first surface and a second surface opposite to the first surface, and a staked resonator including a first electrode film in contact with the first surface, a piezoelectric film overlaying the first electrode film and a second electrode film overlaying the piezoelectric film. The substrate is provided with an air gap including a first aperture opening at the first surface and a second aperture opening at the second surface at the position corresponding to the staked resonator, respectively and having air gap generally vertical shape to the first surface, and another air gap having a tapered shape in the vicinity of the first surface.
摘要翻译：解决了用于形成隔膜结构的技术的问题的体声波谐振器，其更紧凑并且提高了频率精度，其制造方法，使用该隔膜结构的滤波器，使用该隔膜结构的半导体集成电路器件，并且提供使用该模块的高频模块。根据本发明的体声波谐振器包括具有与第一表面相对的第一表面和第二表面的基板，以及包括与第一表面接触的第一电极膜的支架谐振器，覆盖第一电极的压电膜膜和覆盖压电膜的第二电极膜。衬底设置有气隙，该空气间隙包括在第一表面处的第一孔径开口和位于对应于桩状共振器的位置处的第二表面处的第二孔口开口，并且具有大致垂直于第一表面的气隙，另一个气隙在第一表面附近具有锥形形状。

25. 发明申请

US20060158283A1 Piezoelectric thin film resonators 失效
公开(公告)号：US20060158283A1
公开(公告)日：2006-07-20
申请号：US11333282
申请日：2006-01-18
申请人： Mitsutaka Hikita , Nobuhiko Shibagaki , Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
发明人： Mitsutaka Hikita , Nobuhiko Shibagaki , Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
IPC分类号： H03H9/54
CPC分类号： H03H9/174 , H03H9/02102 , H03H9/173 , H03H9/178
摘要： A piezoelectric thin film resonator is formed on a base substrate such as made of Si in which the resonance frequency is substantially determined by the lateral size not by the thickness of the resonator, whereby a resonator for use in TCXO, etc. is provided by the thin film technique, which enables to reduce the thickness of the film and the size of the resonator and integration with Si-based IC incorporating the resonator in one identical substrate.

26. 发明申请

US20140018126A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF THE SAME, AND MOBILE PHONE 有权
标题翻译：半导体器件，其制造方法和移动电话
公开(公告)号：US20140018126A1
公开(公告)日：2014-01-16
申请号：US14008240
申请日：2012-03-08
申请人： Kengo Asai , Atsushi Isobe
发明人： Kengo Asai , Atsushi Isobe
IPC分类号： H01L41/332 , H04B1/40 , H01L41/09
CPC分类号： H03H9/0542 , H01L23/3192 , H01L23/36 , H01L23/373 , H01L27/0629 , H01L29/4175 , H01L29/41758 , H01L29/66659 , H01L29/7835 , H01L41/0926 , H01L41/332 , H01L2924/0002 , H03F3/19 , H03F3/211 , H03F2200/171 , H03F2200/294 , H03F2200/451 , H03H9/0571 , H03H9/706 , H04B1/036 , H04B1/40 , H01L2924/00
摘要： A technique capable of maintaining the filter characteristics of a transmitting filter and a receiving filter by reducing the influences of heat from the power amplifier given to the transmitting filter and the receiving filter as small as possible in the case where the transmitting filter and the receiving filter are formed on the same semiconductor substrate together with the power amplifier in a mobile communication equipment typified by a mobile phone is provided. A high heat conductivity film HCF is provided on a passivation film PAS over the entire area of a semiconductor substrate 1S including an area AR1 on which an LDMOSFET is formed and an area AR2 on which a thin-film piezoelectric bulk wave resonator BAW is formed. The heat mainly generated in the LDMOSFET is efficiently dissipated in all directions by the high heat conductivity film HCF formed on the surface of the semiconductor substrate 1S.
摘要翻译：在发送滤波器和接收滤波器的情况下，能够通过减小给发送滤波器和接收滤波器的功率放大器的热量的影响来保持发射滤波器和接收滤波器的滤波器特性的技术。与移动电话代表的移动通信设备中的功率放大器一起形成在同一半导体衬底上。在包括形成有LDMOSFET的区域AR1的半导体基板1S的整个区域上的钝化膜PAS上设置有高导热性膜HCF和形成有薄膜压电体波谐振器BAW的区域AR2。主要在LDMOSFET中产生的热量通过形成在半导体衬底1S的表面上的高导热膜HCF在所有方向上被有效地消散。

27. 发明申请

US20130020880A1 Energy Storage Circuit 审中-公开
标题翻译：储能电路
公开(公告)号：US20130020880A1
公开(公告)日：2013-01-24
申请号：US13541827
申请日：2012-07-05
申请人： Kengo ASAI , Atsushi Isobe , Kenichi Osada , Yasushi Goto , Hideaki Takano
发明人： Kengo ASAI , Atsushi Isobe , Kenichi Osada , Yasushi Goto , Hideaki Takano
IPC分类号： H02M3/06
CPC分类号： H02J7/34 , H01G5/38 , H01G5/40 , H01H59/0009
摘要： An energy storage circuit includes a first capacitor connected with a power generating element via a first diode and a second capacitor connected with the power generating element via a second diode and a switch. The conduction state of the switch is controlled using the potential difference between its second and third electrodes (driving voltage V). The driving voltage when the switch enters its conductive state is higher than the driving voltage when the switch enters its non-conductive state.
摘要翻译：能量存储电路包括经由第一二极管与发电元件连接的第一电容器和经由第二二极管和开关与发电元件连接的第二电容器。使用其第二和第三电极之间的电位差（驱动电压V）来控制开关的导通状态。当开关进入其导通状态时的驱动电压高于开关进入非导通状态时的驱动电压。

28. 发明授权

US5604059A Mask structure having phase shifting pattern suitable for forming fine pattern on photosensitive film and method of manufacturing solid-state devices using such mask structure 失效
标题翻译：具有适于在感光膜上形成精细图案的相移图案的掩模结构以及使用这种掩模结构制造固态器件的方法
公开(公告)号：US5604059A
公开(公告)日：1997-02-18
申请号：US290603
申请日：1994-08-15
申请人： Ryo Imura , Yoshinori Hoshina , Kengo Asai , Mitsutaka Hikita , Atsushi Isobe , Ryo Suzuki , Kohji Oda , Kazuyuki Sakiyama
发明人： Ryo Imura , Yoshinori Hoshina , Kengo Asai , Mitsutaka Hikita , Atsushi Isobe , Ryo Suzuki , Kohji Oda , Kazuyuki Sakiyama
IPC分类号： G03F1/00 , G03F1/30 , G03F1/68 , G03F7/20 , H01L21/027 , H01L21/30 , H03H3/08 , G03F7/12
CPC分类号： G03F7/70466 , G03F1/30 , G03F1/50 , G03F7/2002
摘要： A mask structure has two (or more) groups of device patterns formed on one transparent support plate. Each of the device patterns has a transparent partial pattern. One or both of the groups of device patterns are provided with phase shifting patterns for improvement of the resolution in the lithography. The transparent partial pattern in each of the device patterns in each of the device pattern groups is determined such that each of the transparent partial patterns held by one of the device pattern groups is adapted for combination with one transparent partial pattern held by the other device pattern group by two or more times of transmission of an exposure beam through the mask structure. Manufacturing of solid-state devices is possible by use of the mask structure, in which exposure of a photo-sensitive film on a substrate to an exposure beam through the mask structure is repeated two or more times with a relative position between the mask structure and the substrate being changed.
摘要翻译：掩模结构具有形成在一个透明支撑板上的两个（或多个）装置图案组。每个设备图案具有透明部分图案。装置图案组中的一个或两个设置有用于改进光刻中的分辨率的相移图案。确定每个设备图案组中的每个设备图案中的每个设备图案中的透明部分图案，使得由设备图案组之一保持的每个透明部分图案适于与由另一设备图案保持的一个透明部分图案组合通过掩模结构将曝光光束透射两次或更多次。可以通过使用掩模结构来制造固体器件，其中通过掩模结构将基片上的感光膜暴露于曝光光束，通过掩模结构与掩模结构之间的相对位置重复两次或更多次衬底被改变。

29. 发明申请

US20110304243A1 Thin-Film Piezoelectric Acoustic Wave Resonator and High-Frequency Filter 审中-公开
标题翻译：薄膜压电声波谐振器和高频滤波器
公开(公告)号：US20110304243A1
公开(公告)日：2011-12-15
申请号：US13201344
申请日：2010-02-18
申请人： Atsushi Isobe , Kengo Asai
发明人： Atsushi Isobe , Kengo Asai
IPC分类号： H01L41/04
CPC分类号： H03H9/173 , H03H9/564 , H03H9/568 , H03H9/587 , H03H9/605
摘要： A thin-film piezoelectric acoustic wave resonator that has a large k2, can trap acoustic energy in a resonating part, does not excite spurious resonance, or can finely adjust resonance frequency and a high-frequency filter using the thin-film piezoelectric acoustic wave resonator are provided without increasing the number of processes. At both ends of a vibrating part (1), fixing parts (8) are physically connected, and between the vibrating part (1) and each of the fixing parts (8), an acoustic insulating part (10) and a phase rotating part (11) are physically connected. As with the vibrating part (1), the acoustic insulating part (10) and the phase rotating part (11) are made up of an upper metal film (3), a piezoelectric thin film, and a lower metal film, and an acoustic wave reflector (6) is provided on each of an upper surface, a lower surface, and side surfaces of the vibrating part (1), the acoustic insulating part (10), and the phase rotating part (11). The vibrating part (1) has a width smaller than its length (La) and also smaller than its thickness, and width/thickness is smaller than 1.
摘要翻译：具有大k2的薄膜压电声波谐振器可以捕获谐振部分中的声能，不会激发寄生谐振，或者可以使用薄膜压电声波谐振器来微调谐谐振频率和高频滤波器在不增加处理次数的情况下被提供。在振动部件（1）的两端，固定部件（8）物理连接，并且在振动部件（1）和每个固定部件（8）之间，隔音部件（10）和相转动部件（11）物理连接。与振动部件（1）一样，隔音部件（10）和相位旋转部件（11）由上部金属膜（3），压电薄膜和下部金属膜构成，声学波形反射器（6）设置在振动部分（1），隔音部分（10）和相位旋转部分（11）的上表面，下表面和侧表面中的每一个上。振动部件（1）的宽度比其长度（La）小，也比其厚度小，宽度/厚度小于1。

30. 发明授权

US07675387B2 Surface acoustic wave device and communication terminal using the same 失效
标题翻译：表面声波装置和通信终端使用相同
公开(公告)号：US07675387B2
公开(公告)日：2010-03-09
申请号：US11514229
申请日：2006-09-01
申请人： Kazuyuki Sakiyama , Kengo Asai , Atsushi Isobe , Kunio Matsumoto , Shinichi Fujiwara
发明人： Kazuyuki Sakiyama , Kengo Asai , Atsushi Isobe , Kunio Matsumoto , Shinichi Fujiwara
IPC分类号： H01L41/00
CPC分类号： H03H9/02574 , H03H9/02834
摘要： A surface acoustic wave device in the present invention is provided with a piezoelectric substrate, a supporting substrate being jointed to the piezoelectric substrate and including a material different in expansion coefficient from the piezoelectric substrate and an interdigital electrode for exciting a surface acoustic wave, the electrode being arranged on the surface of the piezoelectric substrate. Either the interdigital electrode or the piezoelectric substrate is configured so that the interdigital electrode is 40% or more to 70% or less as long as the piezoelectric substrate in the direction to which a surface acoustic wave propagates.
摘要翻译：本发明的声表面波装置具有压电基板，支撑基板与压电基板连接，并且具有与压电基板不同的膨胀系数的材料和用于激励表面声波的叉指电极，所述电极布置在压电基板的表面上。叉指电极或压电基板之间的配置使得叉指电极与表面声波传播方向上的压电基片一样长度为40％以上至70％以下。

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