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31. 发明授权

US10283422B2 Ion implantation method and ion implantation apparatus 有权
公开(公告)号：US10283422B2
公开(公告)日：2019-05-07
申请号：US15816838
申请日：2017-11-17
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Hiroyuki Kariya , Hideki Morikawa , Masaki Ishikawa
IPC分类号： H01L21/00 , H01L21/66 , H01J37/08 , H01J37/147 , H01J37/244 , H01J37/317 , H01L21/265
摘要： An ion implantation method includes measuring a beam energy of an ion beam that is generated by a high-energy multistage linear acceleration unit operating in accordance with a tentative high-frequency parameter, adjusting a value of the high-frequency parameter based on the measured beam energy, and performing ion implantation by using the ion beam generated by the high-energy multistage linear acceleration unit operating in accordance with the adjusted high-frequency parameter. The tentative high-frequency parameter provides a value different from a value of the high-frequency parameter for achieving a maximum acceleration in design to a high-frequency resonator in a part of stages including at least a most downstream stage. The adjusting includes changing at least one of a voltage amplitude and a phase set for the high-frequency resonator in the part including the at least most downstream stage.

32. 发明授权

US10283326B2 Ion generator and method of controlling ion generator 有权
公开(公告)号：US10283326B2
公开(公告)日：2019-05-07
申请号：US15348761
申请日：2016-11-10
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Hiroshi Kawaguchi
IPC分类号： H01J37/32 , B08B9/08 , H01J37/08 , H01J37/317
摘要： An ion generator includes an ion source control unit that controls a gas supply unit and a plasma excitation source in accordance with a current ion source condition and a new ion source condition to be employed subsequent to the current ion source condition, a retention time obtaining unit that obtains retention time for the current ion source condition, and a pre-treatment condition setting unit that sets a pre-treatment condition defining a pre-treatment for forming a surface layer region suitable for the new ion source condition on a plasma chamber inner wall based on the current ion source condition, the retention time, and the new ion source condition. The ion source control unit is configured to control the gas supply unit and the plasma excitation source in accordance with the pre-treatment condition when the current ion source condition is changed to the new ion source condition.

33. 发明授权

US10249477B2 Ion implanter and ion implantation method 有权
公开(公告)号：US10249477B2
公开(公告)日：2019-04-02
申请号：US15937346
申请日：2018-03-27
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Syuta Ochi , Shiro Ninomiya , Yuuji Takahashi , Tadanobu Kagawa
IPC分类号： H01J37/32 , H01L21/223 , H01J37/317
摘要： An ion implanter includes a plasma shower device configured to supply electrons to an ion beam with which a wafer is irradiated. The plasma shower device includes a plasma generating chamber provided with an extraction opening, a first electrode which is provided with an opening communicating with the extraction opening and to which a first voltage is applied with respect to an electric potential of the plasma generating chamber, a second electrode which is disposed at a position facing the first electrode such that the ion beam is interposed between the first and second electrodes and to which a second voltage is applied with respect to the electric potential of the plasma generating chamber, and a controller configured to independently control the first voltage and the second voltage to switch operation modes of the plasma shower device.

34. 发明授权

US09659755B2 Plasma generator and thermal electron emitter 有权
公开(公告)号：US09659755B2
公开(公告)日：2017-05-23
申请号：US15155504
申请日：2016-05-16
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Masateru Sato
IPC分类号： H01J27/08 , H01J37/32
CPC分类号： H01J37/32669 , H01J37/32055 , H01J37/3233 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32458 , H01J37/32541 , H01J37/3255 , H01J2237/3365
摘要： A plasma generator includes: an arc chamber having a plasma generation region in which plasma is generated in the inside thereof; a magnetic field generator configured to apply a magnetic field to the plasma generation region; and a cathode configured to extend in an axial direction along an applying direction of the magnetic field applied to the plasma generation region and provided with a cathode cap that emits thermal electrons at a front end thereof. The cathode cap protrudes toward the inside of the arc chamber in the axial direction and has a shape of which a width in the radial direction perpendicular to the axial direction becomes smaller toward the inside of the arc chamber.

35. 发明授权

US09659749B2 Beam extraction slit structure and ion source 有权
公开(公告)号：US09659749B2
公开(公告)日：2017-05-23
申请号：US14885586
申请日：2015-10-16
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Masateru Sato
IPC分类号： H01J37/317 , H01J37/08
CPC分类号： H01J37/3171 , H01J37/08 , H01J2237/083
摘要： A beam extraction slit structure includes a plasma chamber interior surface that is, in operation, in contact with a plasma; a plasma chamber exterior surface that faces an extraction electrode; and a slit surface part that forms a beam extraction slit between the plasma chamber interior surface and the plasma chamber exterior surface in the beam extraction direction. The slit surface part includes a plasma meniscus fixing part formed in an area of relatively higher plasma density in the slit longitudinal direction to fixingly maintain a plasma meniscus of the plasma and a plasma meniscus non-fixing part formed in an area of relatively lower plasma density in the slit longitudinal direction to movably maintain the plasma meniscus of the plasma in the beam extraction direction.

36. 发明授权

US09425023B2 Ion generator and thermal electron emitter 有权
标题翻译：离子发生器和热电子发射器
公开(公告)号：US09425023B2
公开(公告)日：2016-08-23
申请号：US14721808
申请日：2015-05-26
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Masateru Sato
IPC分类号： H01J37/08 , H01J37/06
CPC分类号： H01J37/06 , H01J27/08 , H01J37/08 , H01J2237/082
摘要： An ion generator includes an arc chamber, a cathode that extends outward from the inside of the arc chamber in an axial direction and that emits a thermal electron into the arc chamber, a thermal reflector with a cylindrical shape provided around the cathode in a radial direction and extending in the axial direction, and a narrow structure configured to narrow a width in the radial direction of a gap between the cathode and the thermal reflector at a given position in the axial direction.
摘要翻译：离子发生器包括电弧室，阴极，其沿着轴向从电弧室的内部向外延伸并且向电弧室发射热电子;沿半径方向设置在阴极周围的具有圆筒形的热反射器并且在轴向方向上延伸，窄结构构造成在轴向的给定位置处使阴极和热反射器之间的间隙的径向宽度变窄。

37. 发明授权

US09390889B2 Ion implanter and method of ion beam tuning 有权
标题翻译：离子注入机和离子束调谐方法
公开(公告)号：US09390889B2
公开(公告)日：2016-07-12
申请号：US14852037
申请日：2015-09-11
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Kazuhiro Watanabe , Yuuji Takahashi , Yusuke Ueno
IPC分类号： H01J37/304 , H01J37/317 , H01J37/244
CPC分类号： H01J37/304 , H01J37/05 , H01J37/244 , H01J37/3171 , H01J2237/055 , H01J2237/24514
摘要： An energy analysis slit of an ion implanter is configured to enable switching between a standard slit opening used for implantation processing performed under a predetermined implantation condition and a high-precision slit opening having higher energy precision than the standard slit opening and used to tune an acceleration parameter for a radio frequency linear accelerator. The acceleration parameter is determined for the predetermined implantation condition so that at least a part of ions supplied to the radio frequency linear accelerator is accelerated to have target energy, and so that the beam current amount measured by a beam measurement unit is equivalent to a target beam current amount.
摘要翻译：离子注入机的能量分析狭缝被配置为能够在用于在预定注入条件下执行的注入处理的标准狭缝开口与具有比标准狭缝开口更高能量精度的高精度狭缝开口之间进行切换，并用于调节加速度射频线性加速器的参数。对于预定的注入条件确定加速度参数，使得提供给射频线性加速器的离子的至少一部分被加速以具有目标能量，并且由光束测量单元测量的束电流量等于目标光束电流量。

38. 发明授权

US09379030B2 Ion implantation method and ion implantation apparatus 有权
标题翻译：离子注入法和离子注入装置
公开(公告)号：US09379030B2
公开(公告)日：2016-06-28
申请号：US14013862
申请日：2013-08-29
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Shiro Ninomiya , Tadanobu Kagawa , Toshio Yumiyama , Akira Funai , Takashi Kuroda
IPC分类号： H01L21/66 , H01J37/08 , C23C14/48 , H01J37/304 , H01J37/317
CPC分类号： H01L22/14 , C23C14/48 , H01J37/304 , H01J37/3171 , H01J2237/0206
摘要： Provided is an ion implantation method of transporting ions generated by an ion source to a wafer and implanting the ions into the wafer by irradiating an ion beam on the wafer, including, during the ion implantation into the wafer, using a plurality of detection units which can detect an event having a possibility of discharge and determining a state of the ion beam based on existence of detected event having a possibility of discharge and a degree of influence of the event on the ion beam.
摘要翻译：提供了一种将由离子源产生的离子输送到晶片并且通过在晶片上照射离子束将离子注入晶片的离子注入方法，包括在离子注入晶片期间使用多个检测单元，可以基于具有放电可能性的检测事件的存在和事件对离子束的影响程度来检测具有放电可能性的事件和确定离子束的状态。

39. 发明授权

US09373481B2 High-energy ion implanter, beam collimator, and beam collimation method 有权
标题翻译：高能离子注入机，光束准直仪和光束准直方法
公开(公告)号：US09373481B2
公开(公告)日：2016-06-21
申请号：US14618630
申请日：2015-02-10
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Kouji Kato , Yoshitaka Amamo
IPC分类号： H01J37/05 , H01J37/09 , H01J37/317 , H01J37/12
CPC分类号： H01J37/3171 , H01J37/12 , H01J2237/024 , H01J2237/032 , H01J2237/121 , H01J2237/16
摘要： A beam collimator includes a plurality of lens units that are arranged along a reference trajectory so that a beam collimated to the reference trajectory comes out from an exit of the beam collimator. Each of the plurality of lens units forms a bow-shaped curved gap and is formed such that an angle of a beam traveling direction with respect to the reference trajectory is changed by an electric field generated in the bow-shaped curved gap. A vacant space is provided between one lens unit of the plurality of lens units and a lens unit that is adjacent to the lens unit. The vacant space is directed in a transverse direction of the collimated beam in a cross section that is perpendicular to the reference trajectory. An inner field containing the reference trajectory is connected to an outer field of the plurality of lens units through the vacant space.
摘要翻译：光束准直仪包括沿着参考轨迹布置的多个透镜单元，使得准直到参考轨迹的光束从光束准直仪的出口出来。多个透镜单元中的每一个形成弓形弯曲间隙，并且形成为使得相对于基准轨迹的光束移动方向的角度由弓形弯曲间隙中产生的电场改变。在多个透镜单元的一个透镜单元和与透镜单元相邻的透镜单元之间设置有空白空间。在垂直于参考轨迹的横截面中，空白空间被引导在准直光束的横向方向上。包含参考轨迹的内部场通过空置空间连接到多个透镜单元的外部场。

40. 发明授权

US09343263B2 Ion implanter, beam energy measuring device, and method of measuring beam energy 有权
标题翻译：离子注入机，光束能量测量装置和测量光束能量的方法
公开(公告)号：US09343263B2
公开(公告)日：2016-05-17
申请号：US14656132
申请日：2015-03-12
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Haruka Sasaki , Kazuhiro Watanabe , Hiroyuki Kariya
IPC分类号： H01J37/00 , H01J37/244 , H01J37/317
CPC分类号： H01J37/244 , H01J37/3171 , H01J2237/057 , H01J2237/24514 , H01J2237/24528 , H01J2237/31703
摘要： A beam energy measuring device in an ion implanter includes a parallelism measuring unit that measures a parallelism of an ion beam at a downstream of a beam collimator of the ion implanter and an energy calculating unit that calculates an energy of the ion beam from the measured parallelism. The ion implanter may further include a control unit that controls a high energy multistage linear acceleration unit based on the measured energy of the ion beam so that the ion beam has a target energy.
摘要翻译：离子注入机中的光束能量测量装置包括平行度测量单元，其测量在离子注入机的光束准直器的下游处的离子束的平行度，以及能量计算单元，其计算来自所测量的平行度的离子束的能量。离子注入机还可以包括控制单元，其基于所测量的离子束的能量来控制高能量多级线性加速单元，使得离子束具有目标能量。

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