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41. 发明授权

US08422235B2 Semiconductor device, and power conversion device using semiconductor device 有权
标题翻译：半导体器件和使用半导体器件的功率转换器件
公开(公告)号：US08422235B2
公开(公告)日：2013-04-16
申请号：US12920287
申请日：2009-07-30
申请人： Katsunori Azuma , Mutsuhiro Mori , Kinya Nakatsu , Seiichi Hayakawa , Fusanori Nishikimi
发明人： Katsunori Azuma , Mutsuhiro Mori , Kinya Nakatsu , Seiichi Hayakawa , Fusanori Nishikimi
IPC分类号： H05K1/14
CPC分类号： B60W20/00 , B60K1/02 , B60K6/445 , B60L2200/26 , B60L2240/423 , B60W10/06 , B60W10/08 , B60W2710/0644 , B60W2710/0666 , B60W2710/083 , H01L23/3735 , H01L23/473 , H01L23/49811 , H01L23/50 , H01L24/48 , H01L24/49 , H01L25/072 , H01L2224/05599 , H01L2224/451 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48472 , H01L2224/49111 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01042 , H01L2924/0105 , H01L2924/01052 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/351 , H02M7/003 , H05K7/20927 , Y02T10/6239 , Y02T10/6269 , Y02T10/6286 , Y02T10/642 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： The present invention provides a vehicle power module and a power converter including a power semiconductor element (328), a plurality of connecting conductors (371U, 372U, 373U) for transmitting current to the power semiconductor element (328), and a metallic base (304) upon which the power semiconductor element (328) and the plurality of connecting conductors (371U, 372U, and 373U) are mounted; and the power semiconductor element (328) and the plurality of connecting conductors (371U, 372U, and 373U) are mounted upon the metallic base (304) so as to form a looped current path. Desirably, the power semiconductor element (328) and the plurality of connecting conductors (371U, 372U, 373U) are arranged so as to form two or more looped current paths.
摘要翻译：本发明提供了一种车辆用电源模块和功率转换器，包括功率半导体元件（328），用于向电力半导体元件（328）传输电流的多个连接导体（371U，372U，373U）和金属基座 304），其上安装有功率半导体元件（328）和多个连接导体（371U，372U和373U）; 功率半导体元件（328）和多个连接导体（371U，372U，373U）安装在金属基座（304）上，形成环路电流路径。期望地，功率半导体元件（328）和多个连接导体（371U，372U，373U）被布置成形成两个或更多个环路电流路径。

42. 发明申请

US20120273897A1 Semiconductor Device and Electric Power Conversion Device Using Same 审中-公开
标题翻译：半导体装置和使用其的电力转换装置
公开(公告)号：US20120273897A1
公开(公告)日：2012-11-01
申请号：US13520505
申请日：2010-01-04
申请人： Masaki Shiraishi , Mutsuhiro Mori , Hiroshi Suzuki , So Watanabe
发明人： Masaki Shiraishi , Mutsuhiro Mori , Hiroshi Suzuki , So Watanabe
IPC分类号： H01L27/088
CPC分类号： H01L29/7397 , H01L27/0664 , H01L29/0619 , H01L29/0839 , H01L29/1095 , H01L29/402
摘要： The trench IGBT is provided with a plurality of trench gates disposed in a manner so as to form wide and narrow of gaps; has a MOS structure that has a channel of a first conductivity type and that is between the trench gate pair that is disposed with a narrow gap therebetween; and is provided with a floating semiconductor layer of the first conductivity type and that is separated from the trench gates by interposing a portion of a third semiconductor layer of a second conductivity type between the trench gate pair that is disposed with a wide gap therebetween. Also, this floating semiconductor layer is disposed parallel to and at a position corresponding to an emitter electrode and a first semiconductor layer having the same electric potential, with a insulating film therebetween.
摘要翻译：沟槽IGBT设置有以形成宽而窄的间隙的方式设置的多个沟槽栅极; 具有MOS结构，其具有第一导电类型的沟道，并且位于其间具有窄间隙的沟槽栅对之间; 并且设置有第一导电类型的浮动半导体层，并且通过在第二导电类型的第三半导体层的一部分之间插入宽间隙而插入沟槽栅对之间，与沟槽栅极分离。此外，该浮动半导体层平行于与发射电极和具有相同电位的第一半导体层相对应的位置，其间具有绝缘膜。

43. 发明授权

US08120098B2 Semiconductor device and power converter using the same 有权
标题翻译：半导体器件和功率转换器使用相同
公开(公告)号：US08120098B2
公开(公告)日：2012-02-21
申请号：US12537548
申请日：2009-08-07
申请人： Taiga Arai , Mutsuhiro Mori
发明人： Taiga Arai , Mutsuhiro Mori
IPC分类号： H01L29/66
CPC分类号： H01L29/7397 , H01L29/0839 , H01L29/1095
摘要： A semiconductor device which can avoid increase of a conduction loss of an IGBT, secure a low noise characteristic and also reduce a switch loss. The switching device is of a trench gate type, in which a drift n− layer 110 is exposed to its main surface to a floating p layer 126 and to trench gates. In other words, the floating p layer 126 is provided within the drift n− layer 110 to be spaced from the trench gates.
摘要翻译：可以避免IGBT的导通损耗增加的半导体器件，确保低噪声特性，并且还可以减少开关损耗。开关器件是沟槽栅型，其中漂移n-层110暴露于其主表面到浮置p层126和沟槽栅极。换句话说，浮置p层126设置在漂移n-层110内以与沟槽栅极间隔开。

44. 发明授权

US07973405B2 Integrated circuit for driving semiconductor device and power converter 有权
标题翻译：用于驱动半导体器件和功率转换器的集成电路
公开(公告)号：US07973405B2
公开(公告)日：2011-07-05
申请号：US12784331
申请日：2010-05-20
申请人： Yoshimasa Takahashi , Naoki Sakurai , Masashi Yura , Masahiro Iwamura , Mutsuhiro Mori
发明人： Yoshimasa Takahashi , Naoki Sakurai , Masashi Yura , Masahiro Iwamura , Mutsuhiro Mori
IPC分类号： H01L23/34
CPC分类号： H01L25/072 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/162 , H01L2224/16225 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/73204 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01037 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/09701 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H02M1/08 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An integrated circuit for driving a semiconductor device, which is adaptable for demands, such as a higher output (larger current), a higher voltage, and a smaller loss, and has a small size, is produced at a low cost, and has high reliability. A power converter including such an integrated circuit is also provided. Circuit elements constituting a drive section of an upper arm drive circuit 212, a level shift circuit 20 including a current sensing circuit 210, a drive section of a lower arm drive circuit 222, and a drive signal processing circuit 224 are integrated and built in one high withstand voltage IC chip 200. Circuit elements constituting a final output stage buffer section 213 of the upper arm drive circuit 212 are built in a vertical p-channel MOS-FET chip 213p and a vertical n-channel MOS-FET chip 213n. Circuit elements constituting a final output stage buffer section 223 of the lower arm drive circuit 222 are built in a vertical p-channel MOS-FET chip 223p and a vertical n-channel MOS-FET chip 223n. Thus, a driver IC 2 is fabricated.
摘要翻译：以低成本生产用于驱动半导体器件的集成电路，其具有较高的输出（较大的电流），更高的电压和更小的损耗，并且尺寸更小的需求，并且具有高的可靠性。还提供了一种包括这种集成电路的功率转换器。构成上臂驱动电路212的驱动部的电路元件，包括电流检测电路210的电平移动电路20，下臂驱动电路222的驱动部以及驱动信号处理电路224被一体化并内置于一个构成上臂驱动电路212的最终输出级缓冲器部分213的电路元件内置在垂直p沟道MOS-FET芯片213p和垂直n沟道MOS-FET芯片213n中。构成下臂驱动电路222的最终输出级缓冲部分223的电路元件内置在垂直p沟道MOS-FET芯片223p和垂直n沟道MOS-FET芯片223n中。因此，制造驱动器IC2。

45. 发明授权

US07948005B2 Insulated-gate bipolar transistor (IGBT) 有权
标题翻译：绝缘栅双极晶体管（IGBT）
公开(公告)号：US07948005B2
公开(公告)日：2011-05-24
申请号：US12121045
申请日：2008-05-15
申请人： Mutsuhiro Mori , Taiga Arai
发明人： Mutsuhiro Mori , Taiga Arai
IPC分类号： H01L29/74 , H01L31/111
CPC分类号： H01L29/7397 , H01L29/1095 , H01L29/66348
摘要： A fourth semiconductor region of a first conduction type is provided in a partial region of a third semiconductor region of a second conduction type. This configuration enhances the blocking voltage at the time when the sheet carrier concentration of a fifth semiconductor region is enhanced.
摘要翻译：第一导电类型的第四半导体区域设置在第二导电类型的第三半导体区域的部分区域中。该结构增强了第五半导体区域的片载体浓度增强时的阻断电压。

46. 发明授权

US07773050B2 Semiconductor device and plasma display device using the same 有权
标题翻译：半导体器件和使用其的等离子体显示器件
公开(公告)号：US07773050B2
公开(公告)日：2010-08-10
申请号：US11955507
申请日：2007-12-13
申请人： Takuo Nagase , Mutsuhiro Mori
发明人： Takuo Nagase , Mutsuhiro Mori
IPC分类号： G09G3/28
CPC分类号： G09G3/2965
摘要： To provide an AC-PDP capable of achieving low power consumption and low cost, a driving method is adopted in which, during a period of sustaining light emission of the AC-PDP, an electrode of one side of the panel is fixed at a predetermined potential, and positive and negative voltages are alternately applied to an electrode of the other side of the panel. In addition, an IGBT is used as a switch element. Thus, with a half-bridge driving method using an IGBT as a switch element, it is possible to simultaneously achieve a reduction in loss of a driving circuit of the AC-PDP and a reduction in the number of components thereof, such reductions not being able to be achieved by the conventional techniques.
摘要翻译：为了提供能够实现低功耗和低成本的AC-PDP，采用驱动方法，其中在AC-PDP的发光持续时间期间，将面板的一侧的电极固定在预定的电位和正负电压交替施加到面板另一侧的电极。另外，使用IGBT作为开关元件。因此，通过使用IGBT作为开关元件的半桥驱动方法，可以同时实现AC-PDP的驱动电路的损耗的减少和其部件数量的减少，这样的减少不是能够通过常规技术实现。

47. 发明授权

US07602045B2 Semiconductor device and inverter device using the same 有权
标题翻译：半导体装置及其逆变装置使用相同
公开(公告)号：US07602045B2
公开(公告)日：2009-10-13
申请号：US11624723
申请日：2007-01-19
申请人： Takuo Nagase , Mutsuhiro Mori
发明人： Takuo Nagase , Mutsuhiro Mori
IPC分类号： H01L29/74 , H01L29/76
CPC分类号： H01L29/7395 , H01L21/268 , H01L27/0664 , H01L29/861
摘要： In a semiconductor device having a pair of IGBT and diode which are connected to each other in inverse-parallel in which a collector-electrode of the IGBT and a cathode-electrode of the diode are wired to each other, and an emitter-electrode of the IGBT and an anode-electrode of the diode are wired to each other, when a breakdown voltage of a junction of a p-type emitter layer and an n-type buffer layer of the IGBT is represented as BVec, and a forward voltage occurring while the diode transits from a state of blocking to a state of forward conduction is represented as VF, a relationship of VF
摘要翻译：在具有一对IGBT和二极管的半导体器件中，IGBT和二极管彼此并联连接，其中IGBT的集电极和二极管的阴极电极彼此连接，发射极当IGBT的p型发射极层和n型缓冲层的结的击穿电压表示为BVec时，二极管的IGBT和阳极电极彼此连接，并且发生正向电压当二极管从阻塞状态转移到正向传导状态时，VF表示为在二极管中流动的电流的预定电流值Id中的VF

48. 发明授权

US07586467B2 Load drive circuit, integrated circuit, and plasma display 有权
标题翻译：负载驱动电路，集成电路和等离子显示
公开(公告)号：US07586467B2
公开(公告)日：2009-09-08
申请号：US11434913
申请日：2006-05-17
申请人： Junichi Sakano , Kenji Hara , Mutsuhiro Mori
发明人： Junichi Sakano , Kenji Hara , Mutsuhiro Mori
IPC分类号： G09G3/28
CPC分类号： G09G3/296 , G09G2330/028 , Y10T307/461
摘要： A small-sized, low-loss load drive circuit, an integrated circuit for that drive circuit, and an inexpensive plasma display using that integrated circuit. In the load drive circuit that responds to switching commands to supply a high or low voltage to a load by switching, the source-drain voltage of an output-stage n-type MOS transistor of a flip-flop is supplied between the gate and cathode of a main IGBT. In order to hold this voltage, the power source to the flip-flop is supplied from a main power source or a charge pump power circuit connected at the fixed potential point of the main power source. In addition, a discharge prevention circuit and discharge prevention elements and are provided in order that the potential of the power source can be maintained higher than the positive potential of main power source.
摘要翻译：小型，低损耗负载驱动电路，用于该驱动电路的集成电路，以及使用该集成电路的便宜的等离子体显示器。在响应切换命令的负载驱动电路中，通过切换向负载提供高电压或低电压，触发器的输出级n型MOS晶体管的源极 - 漏极电压被提供在栅极和阴极之间的主要IGBT。为了保持该电压，触发器的电源从连接在主电源的固定电位点的主电源或电荷泵电源电路提供。此外，设置放电防止电路和放电防止元件，以使得电源的电位可以保持高于主电源的正电位。

49. 发明申请

US20090034306A1 Power Module, Power Converter, and Electric Machine System for Mounting in Vehicle 有权
标题翻译：电源模块，电源转换器和车载电机系统
公开(公告)号：US20090034306A1
公开(公告)日：2009-02-05
申请号：US11830051
申请日：2007-07-30
申请人： Masamitsu INABA , Katsunori Azuma , Mutsuhiro Mori , Kinya Nakatsu
发明人： Masamitsu INABA , Katsunori Azuma , Mutsuhiro Mori , Kinya Nakatsu
IPC分类号： H02M7/537 , B60K1/00
CPC分类号： H02M7/003 , B60L11/18 , B60L15/007 , H01L2224/48091 , H01L2224/48111 , H01L2224/49111 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19107 , Y02T10/645 , Y02T10/7005 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a power module, power converter, and vehicular electric machine system capable of reducing inductance of a peripheral section of an output terminal in a power module, and additionally, reducing a surge voltage.A positive emitter conductor 3 connected to an emitter electrode of a positive power semiconductor element Mpu and an output terminal U are electrically interconnected by using a plurality of aluminum wires 7, a negative collector conductor 4 connected to a collector electrode of a negative power semiconductor element Mnu and the output terminal U are electrically interconnected by using a plurality of aluminum wires 9, and the positive emitter conductor 3 connected to the emitter electrode of the positive power semiconductor element Mpu and the negative collector conductor 4 connected to the collector electrode of the negative power semiconductor element Mnu are further electrically interconnected by using a plurality of aluminum wires 8.
摘要翻译：本发明提供一种功率模块，功率转换器和车载电机系统，其能够降低功率模块中的输出端子的外围部分的电感，并且另外降低浪涌电压。连接到正功率半导体元件Mpu的发射电极的正的发射极导体3和输出端子U通过使用多个铝线7电连接，负极集电体导体4连接到负功率半导体元件的集电极 Mnu和输出端子U通过使用多个铝线9电连接，并且连接到正功率半导体元件Mpu的发射电极的正发射极导体3和连接到负功率半导体元件Mpu的集电极的负集电极导体4 功率半导体元件Mnu通过使用多根铝线8进一步电互连。

50. 发明申请

US20080283867A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080283867A1
公开(公告)日：2008-11-20
申请号：US12121045
申请日：2008-05-15
申请人： Mutsuhiro Mori , Taiga Arai
发明人： Mutsuhiro Mori , Taiga Arai
IPC分类号： H01L29/68
CPC分类号： H01L29/7397 , H01L29/1095 , H01L29/66348
摘要： A fourth semiconductor region of a first conduction type is provided in a partial region of a third semiconductor region of a second conduction type. This configuration enhances the blocking voltage at the time when the sheet carrier concentration of a fifth semiconductor region is enhanced.
摘要翻译：第一导电类型的第四半导体区域设置在第二导电类型的第三半导体区域的部分区域中。该结构增强了第五半导体区域的片载体浓度增强时的阻断电压。

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