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51. 发明授权

US09711290B2 Curved RF electrode for improved Cmax 有权
公开(公告)号：US09711290B2
公开(公告)日：2017-07-18
申请号：US15024931
申请日：2014-09-24
申请人： CAVENDISH KINETICS, INC.
发明人： Mickael Renault , Vikram Joshi , Robertus Petrus Van Kampen , Thomas L. Maguire , Richard L. Knipe
IPC分类号： H01L29/84 , H01G5/16 , H01H59/00 , B81B3/00 , B81C1/00 , H01G5/011
CPC分类号： H01G5/16 , B81B3/0086 , B81B2201/0221 , B81B2203/04 , B81C1/00166 , B81C2201/0104 , B81C2201/0109 , H01G5/011 , H01H59/0009
摘要： The present invention generally relates to a MEMS device and a method of manufacture thereof. The RF electrode, and hence, the dielectric layer thereover, has a curved upper surface that substantially matches the contact area of the bottom surface of the movable plate. As such, the movable plate is able to have good contact with the dielectric layer and thus, good capacitance is achieved.

52. 发明申请

US20170019137A1 DEVICE WITH VARIABLE FREQUENCY FILTER FOR REJECTING HARMONICS 审中-公开
标题翻译：具有可变频率滤波器的器件用于拒绝谐波
公开(公告)号：US20170019137A1
公开(公告)日：2017-01-19
申请号：US15301262
申请日：2015-04-02
申请人： CAVENDISH KINETICS, INC.
发明人： Ray PARKHURST , Roberto GADDI
IPC分类号： H04B1/12 , H04B1/18 , H04B1/04
摘要： The present disclosure generally relates to a device having a variable frequency filter that rejects harmonics generated by a variable reactance device. The variable frequency filter may be coupled to the antenna and the variable reactance device. The filter includes a variable capacitor and an inductor coupled together as a resonant circuit. The filter may be used in cellular technology to prevent harmonic frequencies that are created by another variable reactance device from reaching the antenna of the cellular device. Furthermore, the filter can reflect any receiving frequencies from the antenna and prevent the receiving frequencies from passing through.
摘要翻译：本公开总体上涉及一种具有可变频率滤波器的装置，其抑制由可变电抗装置产生的谐波。可变频率滤波器可以耦合到天线和可变电抗装置。滤波器包括作为谐振电路耦合在一起的可变电容器和电感器。滤波器可用于蜂窝技术中以防止由另一可变电抗装置产生的谐波频率到达蜂窝设备的天线。此外，滤波器可以反射来自天线的任何接收频率并防止接收频率通过。

53. 发明授权

US09443658B2 Variable capacitor compromising MEMS devices for radio frequency applications 有权
标题翻译：可变电容器损害用于射频应用的MEMS器件
公开(公告)号：US09443658B2
公开(公告)日：2016-09-13
申请号：US14420152
申请日：2013-08-07
申请人： CAVENDISH KINETICS, INC.
发明人： Robertus Petrus Van Kampen , Richard L. Knipe
IPC分类号： H01G5/16 , H01G5/38
CPC分类号： H01G5/16 , H01G5/18 , H01G5/38 , H01L27/01 , H01L27/0207 , H01L27/0805 , H01L28/60 , H01L2924/0002 , H01L2924/19041 , H01L2924/19104 , H01L2924/0001
摘要： A variable capacitor (300) comprises cells (200, 400) that have an RF electrode (202, 402) coupled to a bond pad (30). Each cell comprises a plurality of MEMS devices (100) the capacitance of which can be changed by means of a movable electrode. The MEMS devices are placed in a sealed cavity of the cell and are arranged next to each other along the length of the RF electrode of the cell. The RF electrode of each cell can be trimmed so as to obtain an RF line (402) and a further ground electrode (404) and so as to scale the RF capacitance of the cell without impacting the mechanical performance of the MEMS cells. Each cell has the same control capacitance irrespective of the RF capacitance. This allows each cell to use the same isolation resistor required for RF operation and thus each cell has the same parasitic capacitance. This allows the CMOS control circuit to be optimized and the dynamic performance of the cells to be matched.
摘要翻译：可变电容器（300）包括具有耦合到接合焊盘（30）的RF电极（202,402）的电池（200,400）。每个单元包括多个MEMS器件（100），其电容可以通过可移动电极来改变。 MEMS器件被放置在电池的密封空腔中并且沿着电池的RF电极的长度彼此相邻地布置。可以对每个单元的RF电极进行修整，以获得RF线（402）和另外的接地电极（404），以便在不影响MEMS单元的机械性能的情况下缩放电池的RF电容。每个单元都具有与RF电容无关的相同的控制电容。这允许每个单元使用RF操作所需的相同的隔离电阻，因此每个单元具有相同的寄生电容。这允许CMOS控制电路被优化并且电池的动态性能匹配。

54. 发明授权

US09336953B2 MEMS lifetime enhancement 有权
标题翻译： MEMS寿命增强
公开(公告)号：US09336953B2
公开(公告)日：2016-05-10
申请号：US13916675
申请日：2013-06-13
申请人： CAVENDISH KINETICS INC.
发明人： Cong Quoc Khieu , Vikram Joshi , Richard L. Knipe
IPC分类号： H01G5/16 , B81B7/02 , H01G5/18 , H01G5/38 , H01H59/00
CPC分类号： H01G5/16 , B81B7/02 , H01G5/18 , H01G5/38 , H01H59/0009
摘要： The present invention generally relates to methods for increasing the lifetime of MEMS devices by reducing the number of movements of a switching element in the MEMS device. Rather than returning to a ground state between cycles, the switching element can remain in the same state if both cycles necessitate the same capacitance. For example, if in both a first and second cycle, the switching element of the MEMS device is in a state of high capacitance the switching element can remain in place between the first and second cycle rather than move to the ground state. Even if the polarity of the capacitance is different in successive cycles, the switching element can remain in place and the polarity can be switched. Because the switching element remains in place between cycles, the switching element, while having the same finite number of movements, should have a longer lifetime.
摘要翻译：本发明一般涉及通过减少MEMS器件中的开关元件的移动次数来增加MEMS器件寿命的方法。不是在循环之间返回到基态，如果两个循环都需要相同的电容，则开关元件可以保持在相同的状态。例如，如果在第一和第二周期中，MEMS器件的开关元件处于高电容的状态，则开关元件可以在第一和第二周期之间保持就位而不是移动到基态。即使电容的极性在连续的循环中不同，开关元件也可以保持在适当的位置，并且可以切换极性。因为开关元件在周期之间保持原位，所以开关元件虽然具有相同的有限数量的运动，应该具有更长的寿命。

55. 发明授权

US09171966B2 Implantation of gaseous chemicals into cavities formed in intermediate dielectrics layers for subsequent thermal diffusion release 有权
标题翻译：将气态化学品植入到形成于中间介质层中的空腔中，用于随后的热扩散释放
公开(公告)号：US09171966B2
公开(公告)日：2015-10-27
申请号：US14352057
申请日：2012-04-19
申请人： Willibrordus Gerardus Van Den Hoek , Robertus Petrus Van Kampen , Richard L. Knipe , Charles Gordon Smith
发明人： Willibrordus Gerardus Van Den Hoek , Robertus Petrus Van Kampen , Richard L. Knipe , Charles Gordon Smith
IPC分类号： H01L29/84 , B81C1/00 , B81B3/00 , B81B7/00
CPC分类号： H01L29/84 , B81B3/0059 , B81B7/0035 , B81B2203/0127 , B81C1/00285 , B81C1/00293 , B81C1/00682
摘要： The present invention generally relates to methods for increasing the lifetime of MEMS devices by reducing the landing velocity on switching by introducing gas into the cavity surrounding the switching element of the MEMS device. The gas is introduced using ion implantation into a cavity close to the cavity housing the switching element and connected to that cavity by a channel through which the gas can flow from one cavity to the other. The implantation energy is chosen to implant many of the atoms close to the inside roof and floor of the cavity so that on annealing those atoms diffuse into the cavity. The gas provides gas damping which reduces the kinetic energy of the switching MEMS device which then should have a longer lifetime.
摘要翻译：本发明一般涉及通过将气体引入到围绕MEMS器件的开关元件的空腔中来降低开关时降低着陆速度来增加MEMS器件寿命的方法。使用离子注入将气体引入到容纳开关元件的腔附近的空腔中，并且通过通道将气体连接到该空腔，气体可以通过该通道从一个空腔流到另一个空腔。选择植入能量以植入靠近腔室的内部屋顶和底部的许多原子，使得在退火时，这些原子扩散到空腔中。气体提供气体阻尼，其降低开关MEMS器件的动能，然后应该具有更长的寿命。

56. 发明授权

US09076808B2 RF MEMS isolation, series and shunt DVC, and small MEMS 有权
标题翻译： RF MEMS隔离，串联和并联DVC，以及小型MEMS
公开(公告)号：US09076808B2
公开(公告)日：2015-07-07
申请号：US14240677
申请日：2012-08-31
申请人： Roberto Gaddi , Richard L. Knipe , Robertus Petrus Van Kampen , Anartz Unamuno
发明人： Roberto Gaddi , Richard L. Knipe , Robertus Petrus Van Kampen , Anartz Unamuno
IPC分类号： H03H9/00 , H01L49/02 , H01G5/18 , H01G5/38 , H01G5/40 , H01H59/00 , H03K17/16 , H03K17/687
CPC分类号： H01L28/60 , B81B3/0086 , B81B2201/016 , B81B2207/015 , H01G5/18 , H01G5/38 , H01G5/40 , H01H59/0009 , H03K17/162 , H03K17/6872 , H03K2217/0009 , H03K2217/0036 , H03K2217/009
摘要： The present invention generally relates to an architecture for isolating an RF MEMS device from a substrate and driving circuit, series and shunt DVC die architectures, and smaller MEMS arrays for high frequency communications. The semiconductor device has one or more cells with a plurality of MEMS devices therein. The MEMS device operates by applying an electrical bias to either a pull-up electrode or a pull-down electrode to move a switching element of the MEMS device between a first position spaced a first distance from an RF electrode and a second position spaced a second distance different than the first distance from the RF electrode. The pull-up and/or pull-off electrode may be coupled to a resistor to isolate the MEMS device from the substrate.
摘要翻译：本发明一般涉及用于将RF MEMS器件与衬底以及驱动电路，串联和并联DVC管芯结构隔离的架构，以及用于高频通信的较小的MEMS阵列。该半导体器件具有其中具有多个MEMS器件的一个或多个单元。 MEMS器件通过将电偏压施加到上拉电极或下拉电极来操作，以将MEMS器件的开关元件移动在与RF电极间隔开第一距离的第一位置和间隔第二位置的第二位置距离与RF电极的第一距离不同。上拉和/或下拉电极可以耦合到电阻器以将MEMS器件与衬底隔离。

57. 发明申请

US20140340814A1 MEMS VARIABLE CAPACITOR WITH ENHANCED RF PERFORMANCE 有权
标题翻译：具有增强射频性能的MEMS可变电容器
公开(公告)号：US20140340814A1
公开(公告)日：2014-11-20
申请号：US14240654
申请日：2012-09-04
申请人： Robertus Petrus Van Kampen , Anartz Unamuno , Richard L. Knipe , Vikram Joshi , Roberto Gaddi , Toshiyuki Nagata
发明人： Robertus Petrus Van Kampen , Anartz Unamuno , Richard L. Knipe , Vikram Joshi , Roberto Gaddi , Toshiyuki Nagata
IPC分类号： H01G5/16 , B81C1/00 , B81B3/00
CPC分类号： H01G5/16 , B81B3/0051 , B81C1/00158 , B81C1/00476 , B81C1/00523 , H01G5/18
摘要： In a MEMS device, the manner in which the membrane lands over the RF electrode can affect device performance. Bumps or stoppers placed over the RF electrode can be used to control the landing of the membrane and thus, the capacitance of the MEMS device. The shape and location of the bumps or stoppers can be tailored to ensure proper landing of the membrane, even when over-voltage is applied. Additionally, bumps or stoppers may be applied on the membrane itself to control the landing of the membrane on the roof or top electrode of the MEMS device.
摘要翻译：在MEMS器件中，膜抵住RF电极的方式可能会影响器件性能。放置在RF电极上的撞击器或塞子可用于控制膜的着陆，从而控制MEMS器件的电容。可以调整凸块或塞子的形状和位置，以确保膜的适当着陆，即使施加过电压。此外，凸块或塞子可以施加在膜本身上以控制膜在MEMS装置的顶部或顶部电极上的着陆。

58. 发明申请

US20140339688A1 TECHNIQUES FOR THE CANCELLATION OF CHIP SCALE PACKAGING PARASITIC LOSSES 审中-公开
标题翻译：取消切片尺码包装PARASITIC LOSSES的技术
公开(公告)号：US20140339688A1
公开(公告)日：2014-11-20
申请号：US14278901
申请日：2014-05-15
申请人： CAVENDISH KINETICS, INC.
发明人： Roberto GADDI , Robertus Petrus VAN KAMPEN , Dennis J. YOST , Paul Albert CASTILLOU , Atul Prakash SHINGAL
IPC分类号： B81B7/00
CPC分类号： B81B7/0064 , B81B2203/04 , B81B2207/07 , B81B2207/092 , B81B2207/093 , H05K1/0218 , H05K1/0243 , H05K1/113 , H05K3/3436 , H05K3/3452
摘要： The present invention generally relates to techniques and structures that cancel or mitigate RF coupling from the RF circuit to the silicon die. To cancel or mitigate the RF coupling, a conductive coating may be formed over the RF-MEMS device. The conductive coating may be coupled to the die. Alternatively, the conductive coating may be coupled to the die through the RF-MEMS by having a through silicon via. Another manner for cancelling or mitigating RF coupling is to have no conductive traces located on the front side of the PCB.
摘要翻译：本发明一般涉及抵消或减轻从RF电路到硅芯片的RF耦合的技术和结构。为了消除或减轻RF耦合，可以在RF-MEMS器件上形成导电涂层。导电涂层可以连接到管芯。或者，导电涂层可以通过穿过硅通孔而通过RF-MEMS耦合到管芯。取消或减轻RF耦合的另一种方式是在PCB正面没有导电迹线。

59. 发明申请

US20140300404A1 RF MEMS ISOLATION, SERIES AND SHUNT DVC, AND SMALL MEMS 有权
标题翻译： RF MEMS隔离，串联和分流DVC以及小型MEMS
公开(公告)号：US20140300404A1
公开(公告)日：2014-10-09
申请号：US14240677
申请日：2012-08-31
申请人： Roberto Gaddi , Richard L. Knipe , Robertus Petrus Van Kampen , Anartz Unamuno
发明人： Roberto Gaddi , Richard L. Knipe , Robertus Petrus Van Kampen , Anartz Unamuno
IPC分类号： H01L49/02 , H03K17/687 , H03K17/16
CPC分类号： H01L28/60 , B81B3/0086 , B81B2201/016 , B81B2207/015 , H01G5/18 , H01G5/38 , H01G5/40 , H01H59/0009 , H03K17/162 , H03K17/6872 , H03K2217/0009 , H03K2217/0036 , H03K2217/009
摘要： The present invention generally relates to an architecture for isolating an RF MEMS device from a substrate and driving circuit, series and shunt DVC die architectures, and smaller MEMS arrays for high frequency communications. The semiconductor device has one or more cells with a plurality of MEMS devices therein. The MEMS device operates by applying an electrical bias to either a pull-up electrode or a pull-down electrode to move a switching element of the MEMS device between a first position spaced a first distance from an RF electrode and a second position spaced a second distance different than the first distance from the RF electrode. The pull-up and/or pull-off electrode may be coupled to a resistor to isolate the MEMS device from the substrate.
摘要翻译：本发明一般涉及用于将RF MEMS器件与衬底以及驱动电路，串联和并联DVC管芯结构隔离的架构，以及用于高频通信的较小的MEMS阵列。该半导体器件具有其中具有多个MEMS器件的一个或多个单元。 MEMS器件通过将电偏压施加到上拉电极或下拉电极来操作，以将MEMS器件的开关元件移动在与RF电极间隔开第一距离的第一位置和间隔第二位置的第二位置距离与RF电极的第一距离不同。上拉和/或下拉电极可以耦合到电阻器以将MEMS器件与衬底隔离。

60. 发明授权

US08786933B2 Fabrication of a floating rocker MEMS device for light modulation 有权
标题翻译：用于光调制的浮动摇臂MEMS装置的制造
公开(公告)号：US08786933B2
公开(公告)日：2014-07-22
申请号：US13941851
申请日：2013-07-15
申请人： Cavendish Kinetics Inc.
发明人： Charles Gordon Smith , Richard L. Knipe
IPC分类号： G02B26/00 , G02B26/08 , B81C1/00
CPC分类号： G02B26/0833 , B81B2201/042 , B81C1/00317 , B81C2203/0136 , B81C2203/0145 , G02B26/0841
摘要： The current disclosure shows how to make a fast switching array of mirrors for projection displays. Because the mirror does not have a via in the middle connecting to the underlying spring support, there is an improved contrast ratio that results from not having light scatter off the legs or vias like existing technologies. Because there are no supporting contacts, the mirror can be made smaller making smaller pixels that can be used to make higher density displays. In addition, because there is not restoring force from any supporting spring support, the mirror stays in place facing one or other direction due to adhesion. This means there is no need to use a voltage to hold the mirror in position. This means that less power is required to run the display.
摘要翻译：目前的公开内容显示了如何制造用于投影显示器的反射镜的快速切换阵列。因为反射镜在连接到下面的弹簧支撑件的中间没有通孔，所以具有改善的对比度，这是由于不像现有技术那样从腿部或通孔没有光散射。因为没有支撑触点，镜子可以做得更小，从而可以用较小的像素来制作更高密度的显示器。另外，由于没有来自任何支撑弹簧支撑件的恢复力，因为粘附，反射镜保持在面向一个或另一个方向的位置。这意味着不需要使用电压将镜子保持在适当的位置。这意味着运行显示器需要较少的电力。

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