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1. 发明申请

US20140246740A1 IMPLANTATION OF GASEOUS CHEMICALS INTO CAVITIES FORMED IN INTERMEDIATE DIELECTRICS LAYERS FOR SUBSEQUENT THERMAL DIFFUSION RELEASE 有权
标题翻译：将气体化学物质纳入用于后续热扩散释放的中间电介质层中的CAVI
公开(公告)号：US20140246740A1
公开(公告)日：2014-09-04
申请号：US14352057
申请日：2012-04-19
申请人： Willibrordus Gerardus Van Den Hoek , Robertus Petrus Van Kampen , Richard L. Knipe , Charles Gordon Smith
发明人： Willibrordus Gerardus Van Den Hoek , Robertus Petrus Van Kampen , Richard L. Knipe , Charles Gordon Smith
IPC分类号： B81B3/00 , B81B7/00 , B81C1/00
CPC分类号： H01L29/84 , B81B3/0059 , B81B7/0035 , B81B2203/0127 , B81C1/00285 , B81C1/00293 , B81C1/00682
摘要： The present invention generally relates to methods for increasing the lifetime of MEMS devices by reducing the landing velocity on switching by introducing gas into the cavity surrounding the switching element of the MEMS device. The gas is introduced using ion implantation into a cavity close to the cavity housing the switching element and connected to that cavity by a channel through which the gas can flow from one cavity to the other. The implantation energy is chosen to implant many of the atoms close to the inside roof and floor of the cavity so that on annealing those atoms diffuse into the cavity. The gas provides gas damping which reduces the kinetic energy of the switching MEMS device which then should have a longer lifetime.
摘要翻译：本发明一般涉及通过将气体引入到围绕MEMS器件的开关元件的空腔中来降低开关时降低着陆速度来增加MEMS器件寿命的方法。使用离子注入将气体引入到容纳开关元件的腔附近的空腔中，并且通过通道将气体连接到该空腔，气体可以通过该通道从一个空腔流到另一个空腔。选择植入能量以植入靠近腔室的内部屋顶和底部的许多原子，使得在退火时，这些原子扩散到空腔中。气体提供气体阻尼，其降低开关MEMS器件的动能，然后应该具有更长的寿命。

2. 发明申请

US20090134522A1 Micro-Electromechanical System Memory Device and Method of Making the Same 审中-公开
标题翻译：微机电系统存储器及其制作方法
公开(公告)号：US20090134522A1
公开(公告)日：2009-05-28
申请号：US12085506
申请日：2006-11-22
申请人： Charles Gordon Smith , Robert Kazinczi , Robertus P. Van Kampen
发明人： Charles Gordon Smith , Robert Kazinczi , Robertus P. Van Kampen
IPC分类号： H01L29/45 , H01L21/441
CPC分类号： B81C1/00666 , B81B3/001 , B81B2203/0118 , B81C2201/0109 , G11C23/00
摘要： A method of manufacturing a non-volatile memory bitcell comprises the steps of depositing a first layer of conductive material on a substrate and patterning and etching the first layer of conductive material to form three non-linearly disposed electrodes. The method also comprises the steps of depositing a first layer of sacrificial material on the electrodes and the substrate and providing an elongate cantilever structure on the first layer of sacrificial material such that the cantilever structure and at least a portion of each electrode overlap each other. The method also includes the steps of depositing a second layer of sacrificial material on the cantilever structure and the first layer of sacrificial material and providing a capping layer on the second layer of sacrificial material and providing holes in the capping layer such that at least a portion of the second layer of sacrificial material is exposed. Finally, the method provides the step of removing the first and second layers of sacrificial material through the holes provided in the capping layer, thereby defining a cavity in which the cantilever structure is suspended.
摘要翻译：一种制造非易失性存储器位单元的方法包括以下步骤：将第一层导电材料沉积在衬底上，并对第一层导电材料进行图案化和蚀刻以形成三个非线性布置的电极。该方法还包括以下步骤：在电极和衬底上沉积牺牲材料的第一层，并在第一牺牲材料层上提供细长的悬臂结构，使得悬臂结构和每个电极的至少一部分彼此重叠。该方法还包括以下步骤：将第二层牺牲材料沉积在悬臂结构和第一牺牲材料层上，并在牺牲材料的第二层上提供覆盖层，并在封盖层中提供孔，使得至少一部分的第二层牺牲材料被暴露。最后，该方法提供了通过设置在覆盖层中的孔去除第一层和第二层牺牲材料的步骤，从而限定悬臂悬臂结构的空腔。

3. 发明授权

US08289674B2 Moving a free-standing structure between high and low adhesion states 有权
标题翻译：在高和低粘附状态之间移动独立结构
公开(公告)号：US08289674B2
公开(公告)日：2012-10-16
申请号：US12405758
申请日：2009-03-17
申请人： Charles Gordon Smith , Richard L. Knipe
发明人： Charles Gordon Smith , Richard L. Knipe
IPC分类号： H01H47/00
CPC分类号： H01H59/0009 , G11C23/00 , H01H1/0036 , H01H2001/0047 , H01H2059/0036 , H01H2059/0054 , H01H2059/0063
摘要： Embodiments disclosed herein generally solve a stiction problem in switching devices by using a series of pulses of force which take the switch from being strongly adhered to a landing electrode to the point where it is only weakly adhered. Once in the low adhesion state, the switch can then be pulled away from contact with a lower force provided by either the spring constant of the switch and/or the electrostatic forces resulting from low voltages applied to nearby electrodes.
摘要翻译：本文公开的实施例通过使用一系列将开关牢固地粘附到着陆电极到仅弱附着点的力的脉冲来解决开关器件中的静电问题。一旦处于低附着状态，则可以用由开关的弹簧常数提供的较小的力和/或施加到附近电极的低电压产生的静电力将开关拉离开接触。

4. 发明授权

US07867886B2 Method of enclosing a micro-electromechanical element 有权
标题翻译：封闭微机电元件的方法
公开(公告)号：US07867886B2
公开(公告)日：2011-01-11
申请号：US12085428
申请日：2006-11-22
申请人： Charles Gordon Smith , Robertus P. Van Kampen
发明人： Charles Gordon Smith , Robertus P. Van Kampen
IPC分类号： H01L21/445 , B81C1/00 , H01L23/525
CPC分类号： B81C1/00333 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A method, in a complementary metal oxide semiconductor fabrication process, of creating a layered housing containing a micro-electromechanical system device, the method comprising the steps of providing a cavity in at least one layer of the housing, the cavity being accessible through via holes in a layer of insulating material deposited thereon, and the layer of insulating material being covered by a thin film layer of conductive material. The method further comprises the step of hydrophobically treating at least a portion of the inner surface of the cavity. Finally the method comprises the steps of submerging the wafer in an electroplating solution and electroplating a conductive layer onto the thin film layer of conductive material such that the cavity remains free of electroplating solution.
摘要翻译：在互补金属氧化物半导体制造工艺中，制造包含微机电系统器件的分层壳体的方法，所述方法包括以下步骤：在所述壳体的至少一层中提供空腔，所述空腔可通过通孔在其上沉积的绝缘材料层中，并且绝缘材料层被导电材料的薄膜层覆盖。该方法还包括对空腔的内表面的至少一部分进行疏水处理的步骤。最后，该方法包括以下步骤：将晶片浸入电镀溶液中，并将导电层电镀到导电材料的薄膜层上，使得空腔保持不含电镀溶液。

5. 发明授权

US07772024B2 Method of manufacturing a micro-mechanical element 有权
标题翻译：微机械元件的制造方法
公开(公告)号：US07772024B2
公开(公告)日：2010-08-10
申请号：US10554642
申请日：2004-04-26
申请人： Robert Van Kampen , Charles Gordon Smith , Jack Luo , Andrew John Weeks
发明人： Robert Van Kampen , Charles Gordon Smith , Jack Luo , Andrew John Weeks
IPC分类号： H01L21/00
CPC分类号： B81C1/0015 , B81C2201/0109 , B81C2201/0132 , H01H59/0009
摘要： A method of manufacturing a micromechanical element wherein the method comprises the steps of providing a layer of base material, applying at least one at least partly sacrificial layer of an etchable material, patterning the at least partly sacrificial layer, to define at least a portion of the shape of the element, applying at least one structural layer of a mechanical material, patterning the structural layer to form at least a portion of the element, and removing at least partly the patterned at least partly sacrificial layer to release partly free the element. The mechanical material is selected from the group of conductive materials.
摘要翻译：一种制造微机械元件的方法，其中所述方法包括以下步骤：提供基材层，施加可蚀刻材料的至少一个至少部分牺牲层，图案化所述至少部分牺牲层，以限定至少部分牺牲层元件的形状，施加机械材料的至少一个结构层，图案化结构层以形成元件的至少一部分，以及至少部分去除图案化的至少部分牺牲层以释放部分地释放元件。机械材料选自导电材料组。

6. 发明申请

US20090298215A1 Method of Enclosing a Micro-Electromechanical Element 有权
标题翻译：封闭微机电元件的方法
公开(公告)号：US20090298215A1
公开(公告)日：2009-12-03
申请号：US12085428
申请日：2006-11-22
申请人： Charles Gordon Smith , Robertus P. Van Kampen
发明人： Charles Gordon Smith , Robertus P. Van Kampen
IPC分类号： H01L21/50
CPC分类号： B81C1/00333 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A method, in a complementary metal oxide semiconductor fabrication process, of creating a layered housing containing a micro-electromechanical system device, the method comprising the steps of providing a cavity in at least one layer of the housing, the cavity being accessible through via holes in a layer of insulating material deposited thereon, and the layer of insulating material being covered by a thin film layer of conductive material. The method further comprises the step of hydrophobically treating at least a portion of the inner surface of the cavity. Finally the method comprises the steps of submerging the wafer in an electroplating solution and electroplating a conductive layer onto the thin film layer of conductive material such that the cavity remains free of electroplating solution.
摘要翻译：在互补金属氧化物半导体制造工艺中，制造包含微机电系统器件的分层壳体的方法，所述方法包括以下步骤：在所述壳体的至少一层中提供空腔，所述空腔可通过通孔在其上沉积的绝缘材料层中，并且绝缘材料层被导电材料的薄膜层覆盖。该方法还包括对空腔的内表面的至少一部分进行疏水处理的步骤。最后，该方法包括以下步骤：将晶片浸入电镀溶液中，并将导电层电镀到导电材料的薄膜层上，使得空腔保持不含电镀溶液。

7. 发明授权

US07063778B2 Microfluidic movement 失效
标题翻译：微流控运动
公开(公告)号：US07063778B2
公开(公告)日：2006-06-20
申请号：US10501440
申请日：2003-01-14
申请人： Moeketsi Mpholo , Benjamin Brown , Charles Gordon Smith
发明人： Moeketsi Mpholo , Benjamin Brown , Charles Gordon Smith
IPC分类号： G01N27/447
CPC分类号： B01F13/0076 , B01L3/502707 , B01L3/50273 , B01L3/502784 , B01L2300/0887 , B01L2400/0415 , F04B19/006
摘要： An apparatus for driving small volumes of fluid. The apparatus comprises a substrate and a first array of electrically conductive electrodes formed on the substrate. A second array of electrically conductive electrodes formed on the substrate, the first and second array being interlaced and being arranged such that each of the electrodes in the second array has a width in a fluid driving direction which is greater than that of each of the electrodes in the first array and such that the first and second set electrodes are positioned so that each of the electrodes of the first set is not at a position equidistant from adjacent electrodes of the second set, wherein both of the arrays of the arrays of electrode having widths in the fluid flow direction and thickness selected such that, in use, by varying the peak value of an alternating drive voltage applied thereto the direction of flow of a fluid adjacent to the arrays of electrodes can be controlled.
摘要翻译：用于驱动小体积流体的装置。该装置包括基板和形成在基板上的导电电极的第一阵列。形成在基板上的第二导电电极阵列，第一和第二阵列交织并且被布置成使得第二阵列中的每个电极具有大于每个电极的电极的流体驱动方向上的宽度在第一阵列中并且使得第一和第二固定电极被定位成使得第一组的每个电极不在与第二组的相邻电极等距的位置，其中电极阵列的两个阵列具有流体流动方向上的宽度和厚度被选择，使得在使用中，通过改变施加到其上的交替驱动电压的峰值可以控制与电极阵列相邻的流体的流动方向。

8. 发明授权

US08861218B2 Device containing plurality of smaller MEMS devices in place of a larger MEMS device 有权
标题翻译：装置包含多个较小的MEMS器件代替较大的MEMS器件
公开(公告)号：US08861218B2
公开(公告)日：2014-10-14
申请号：US12614929
申请日：2009-11-09
申请人： Charles Gordon Smith , Richard L. Knipe , Vikram Joshi , Roberto Gaddi , Anartz Unamuno , Robertus Petrus Van Kampen
发明人： Charles Gordon Smith , Richard L. Knipe , Vikram Joshi , Roberto Gaddi , Anartz Unamuno , Robertus Petrus Van Kampen
IPC分类号： H05K1/18 , H01G5/40 , G01P15/135 , H01G5/18 , B81B7/04 , G01P15/125 , G01P15/08
CPC分类号： B81B7/04 , B81B2201/0221 , B81B2201/0235 , B81B2207/053 , G01P15/0802 , G01P15/125 , G01P15/135 , H01G5/18 , H01G5/40
摘要： Embodiments disclosed herein generally include using a large number of small MEMS devices to replace the function of an individual larger MEMS device or digital variable capacitor. The large number of smaller MEMS devices perform the same function as the larger device, but because of the smaller size, they can be encapsulated in a cavity using complementary metal oxide semiconductor (CMOS) compatible processes. Signal averaging over a large number of the smaller devices allows the accuracy of the array of smaller devices to be equivalent to the larger device. The process is exemplified by considering the use of a MEMS based accelerometer switch array with an integrated analog to digital conversion of the inertial response. The process is also exemplified by considering the use of a MEMS based device structure where the MEMS devices operate in parallel as a digital variable capacitor.
摘要翻译：本文公开的实施例通常包括使用大量的小MEMS器件来代替单个更大的MEMS器件或数字可变电容器的功能。大量较小的MEMS器件具有与较大器件相同的功能，但是由于尺寸较小，因此可以使用互补金属氧化物半导体（CMOS）兼容工艺封装在腔中。通过大量较小器件的信号平均，允许较小器件阵列的精度等同于较大的器件。通过考虑使用具有惯性响应的集成模数转换的基于MEMS的加速度计开关阵列来举例说明该过程。还通过考虑使用MEMS器件结构（其中MEMS器件并行地作为数字可变电容器）来使用该过程。

9. 发明申请

US20110043892A1 FABRICATION OF A FLOATING ROCKER MEMS DEVICE FOR LIGHT MODULATION 有权
标题翻译：用于轻型调制的浮动式MEMS器件的制造
公开(公告)号：US20110043892A1
公开(公告)日：2011-02-24
申请号：US12862036
申请日：2010-08-24
申请人： Charles Gordon Smith , Richard L. Knipe
发明人： Charles Gordon Smith , Richard L. Knipe
IPC分类号： G02B26/00 , B05D3/10 , B05D5/12
CPC分类号： G02B26/0833 , B81B2201/042 , B81C1/00317 , B81C2203/0136 , B81C2203/0145 , G02B26/0841
摘要： The current disclosure shows how to make a fast switching array of mirrors for projection displays. Because the mirror does not have a via in the middle connecting to the underlying spring support, there is an improved contrast ratio that results from not having light scatter off the legs or vias like existing technologies. Because there are no supporting contacts, the mirror can be made smaller making smaller pixels that can be used to make higher density displays. In addition, because there is not restoring force from any supporting spring support, the mirror stays in place facing one or other direction due to adhesion. This means there is no need to use a voltage to hold the mirror in position. This means that less power is required to run the display.
摘要翻译：目前的公开内容显示了如何制造用于投影显示器的反射镜的快速切换阵列。因为反射镜在连接到下面的弹簧支撑件的中间没有通孔，所以存在改善的对比度，这是由于不像现有技术那样从腿部或通孔没有光散射。因为没有支撑触点，镜子可以做得更小，从而可以用较小的像素来制作更高密度的显示器。另外，由于没有来自任何支撑弹簧支撑件的恢复力，因为粘附，反射镜保持在面向一个或另一个方向的位置。这意味着不需要使用电压将镜子保持在适当的位置。这意味着运行显示器需要较少的电力。

10. 发明申请

US20100116632A1 METHOD OF USING A PLURALITY OF SMALLER MEMS DEVICES TO REPLACE A LARGER MEMS DEVICE 有权
标题翻译：使用多个小型MEMS器件来替代大型MEMS器件的方法
公开(公告)号：US20100116632A1
公开(公告)日：2010-05-13
申请号：US12614929
申请日：2009-11-09
申请人： CHARLES GORDON SMITH , Richard L. Knipe , Vikram Joshi , Roberto Gaddi , Anartz Unamuno , Robertus Petrus Van Kampen
发明人： CHARLES GORDON SMITH , Richard L. Knipe , Vikram Joshi , Roberto Gaddi , Anartz Unamuno , Robertus Petrus Van Kampen
IPC分类号： H01H57/00 , H05K1/16 , H01H47/02
CPC分类号： B81B7/04 , B81B2201/0221 , B81B2201/0235 , B81B2207/053 , G01P15/0802 , G01P15/125 , G01P15/135 , H01G5/18 , H01G5/40
摘要： Embodiments disclosed herein generally include using a large number of small MEMS devices to replace the function of an individual larger MEMS device or digital variable capacitor. The large number of smaller MEMS devices perform the same function as the larger device, but because of the smaller size, they can be encapsulated in a cavity using complementary metal oxide semiconductor (CMOS) compatible processes. Signal averaging over a large number of the smaller devices allows the accuracy of the array of smaller devices to be equivalent to the larger device. The process is exemplified by considering the use of a MEMS based accelerometer switch array with an integrated analog to digital conversion of the inertial response. The process is also exemplified by considering the use of a MEMS based device structure where the MEMS devices operate in parallel as a digital variable capacitor.
摘要翻译：本文公开的实施例通常包括使用大量的小MEMS器件来代替单个更大的MEMS器件或数字可变电容器的功能。大量较小的MEMS器件具有与较大器件相同的功能，但是由于尺寸较小，因此可以使用互补金属氧化物半导体（CMOS）兼容工艺封装在腔中。通过大量较小器件的信号平均，允许较小器件阵列的精度等同于较大的器件。通过考虑使用具有惯性响应的集成模数转换的基于MEMS的加速度计开关阵列来举例说明该过程。还通过考虑使用MEMS器件结构（其中MEMS器件并行地作为数字可变电容器）来使用该过程。

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