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71. 发明授权

US08692343B2 MR enhancing layer (MREL) for spintronic devices 有权
标题翻译：用于自旋电子设备的MR增强层（MREL）
公开(公告)号：US08692343B2
公开(公告)日：2014-04-08
申请号：US12799468
申请日：2010-04-26
申请人： Kunliang Zhang , Min Li , Yuchen Zhou
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： H01L43/08 , H01L29/82
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G11B5/3929 , G11B5/3967 , H01F1/401 , H01F10/193 , H01F10/1936 , H01F10/3272 , H01F10/3295 , H01F41/303 , H01L29/66984 , H01L29/82 , H01L43/02 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129
摘要： The performance of an MR device has been improved by inserting one or more Magneto-Resistance Enhancing Layers (MRELs) into approximately the center of one or more of the active layers (such as AP1, SIL, FGL, and Free layers). An MREL is a layer of a low band gap, high electron mobility semiconductor such as ZnO or a semimetal such as Bi.
摘要翻译：通过将一个或多个磁阻增强层（MREL）插入到一个或多个有源层（例如AP1，SIL，FGL和自由层）的大约中心，改善了MR器件的性能。 MREL是低带隙的层，诸如ZnO的高电子迁移率半导体或诸如Bi的半金属。

72. 发明授权

US08488373B2 Spin injection layer robustness for microwave assisted magnetic recording 有权
公开(公告)号：US08488373B2
公开(公告)日：2013-07-16
申请号：US13200844
申请日：2011-10-03
申请人： Kunliang Zhang , Min Li , Yuchen Zhou , Soichi Oikawa , Hitoshi Iwasaki , Kenichiro Yamada , Katsuhiko Koui
发明人： Kunliang Zhang , Min Li , Yuchen Zhou , Soichi Oikawa , Hitoshi Iwasaki , Kenichiro Yamada , Katsuhiko Koui
IPC分类号： G11C11/00
CPC分类号： H03B15/006 , C23C14/025 , C23C14/165 , G11C5/005 , G11C11/161 , Y10T428/1114
摘要： A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe(100-V)CoV where v is from 5 to 100 atomic % formed between the SIL and non-magnetic spacer is disclosed. A composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture is used to enhance perpendicular magnetic anisotropy (PMA) in the STO device. The interfacial layer quenches SIL oscillations and thereby stabilizes the SIL against FGL oscillations. The interfacial layer preferably has a thickness from 5 to 50 Angstroms and enhances amplitude (dR/R) in the STO device. The STO device may have a top SIL or bottom SIL configuration. The SIL is typically a laminated structure such as (Co/Ni)X where x is between 5 and 50.

73. 发明授权

US08484830B2 Method of manufacturing a CPP structure with enhanced GMR ratio 有权
标题翻译：制造具有增强的GMR比的CPP结构的方法
公开(公告)号：US08484830B2
公开(公告)日：2013-07-16
申请号：US13065966
申请日：2011-04-04
申请人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
发明人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
IPC分类号： G11B5/187 , G11B5/23
CPC分类号： H01L43/08 , B82Y40/00 , G11B5/3906 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01F41/18 , H01F41/303 , H01L43/10 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1129 , Y10T428/115
摘要： A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies, from 85 to 100 atomic % to maintain low Hc and λs values. A small positive magnetostriction value in a Co75Fe25 layer is used to offset a negative magnetostriction value in a Ni90Fe10layer. The CoFe layer is deposited on a sensor stack in which a seed layer, AFM layer, pinned layer, and non-magnetic spacer layer are sequentially formed on a substrate. After a NiFe layer and capping layer are sequentially deposited on the CoFe layer, the sensor stack is patterned to give a sensor element with top and bottom surfaces and a sidewall connecting the top and bottom surfaces. Thereafter, a dielectric layer is formed adjacent to the sidewalls.
摘要翻译：公开了一种具有CoFe / NiFe复合自由层的CPP-GMR自旋阀，其中CoFe层的Fe含量为20〜70原子％，NiFe层中的Ni含量为85〜100原子％，保持低Hc 和lambdas值。使用Co75Fe25层中的小的正磁致伸缩值来抵消Ni90Fe10层中的负磁致伸缩值。 CoFe层沉积在传感器堆叠上，其中种子层，AFM层，钉扎层和非磁性间隔层依次形成在基底上。在NiFe层和覆盖层顺序地沉积在CoFe层上之后，传感器堆叠被图案化以给出具有顶表面和底表面的传感器元件以及连接顶表面和底表面的侧壁。此后，与侧壁相邻地形成电介质层。

74. 发明申请

US20130069626A1 Perpendicular spin torque oscillator FMR frequency measurement method 有权
公开(公告)号：US20130069626A1
公开(公告)日：2013-03-21
申请号：US13200148
申请日：2011-09-19
申请人： Yuchen Zhou , Kunliang Zhang , Min Li , Kenichi Takano , Joe Smyth , Moris Dovek , Akihiko Takeo , Tomomi Funayama , Masahiro Takashita , Masayuki Takagishi
发明人： Yuchen Zhou , Kunliang Zhang , Min Li , Kenichi Takano , Joe Smyth , Moris Dovek , Akihiko Takeo , Tomomi Funayama , Masahiro Takashita , Masayuki Takagishi
IPC分类号： G01R23/02
CPC分类号： G01R33/1284 , G11B5/3903 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L43/08
摘要： A method for measuring the frequency in a spin torque oscillator having at least a magnetic oscillation layer (MOL), junction layer, and magnetic reference layer (MRL) is disclosed. In a first embodiment, a small in-plane magnetic field is applied to the STO after a DC current is applied to excite the MOL into an oscillation state. The MRL has a perpendicular magnetization that is tilted slightly to give an in-plane magnetization component to serve as a reference layer for measuring the oscillation frequency of the MOL in-plane magnetization component. An AC voltage change is produced in the DC current as a result of variable STO resistance and directly correlates to MOL oscillation frequency. Alternatively, a field having both perpendicular and in-plane components may be applied externally or by forming the STO between two magnetic poles thereby producing an in-plane magnetization reference component in the MRL.

75. 发明授权

US08385027B2 TMR device with novel free layer structure 有权
标题翻译： TMR器件具有新颖的自由层结构
公开(公告)号：US08385027B2
公开(公告)日：2013-02-26
申请号：US13317485
申请日：2011-10-19
申请人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
IPC分类号： G11B5/33 , G11B5/127 , H01L29/82
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A composite free layer having a FL1/insertion/FL2 configuration is disclosed for achieving high dR/R, low RA, and low λ in TMR or GMR sensors. Ferromagnetic FL1 and FL2 layers have (+) λ and (−) λ values, respectively. FL1 may be CoFe, CoFeB, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, or Nb. FL2 may be CoFe, NiFe, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, Nb, or B. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Cr, or B. In a TMR stack with a MgO tunnel barrier, dR/R>60%, λ˜1×10−6, and RA=1.2 ohm-um2 when FL1 is CoFe/CoFeB/CoFe, FL2 is CoFe/NiFe/CoFe, and the insertion layer is CoTa or CoFeBTa.
摘要翻译：公开了具有FL1 /插入/ FL2配置的复合自由层，用于在TMR或GMR传感器中实现高dR / R，低RA和低λ。铁磁FL1和FL2层分别具有（+）λ和（ - ）λ值。 FL1可以是CoFe，CoFeB或其与Ni，Ta，Mn，Ti，W，Zr，Hf，Tb或Nb的合金。 FL2可以是CoFe，NiFe或其与Ni，Ta，Mn，Ti，W，Zr，Hf，Tb，Nb或B的合金。薄插入层包括至少一种诸如Co，Fe和Ni 以及选自Ta，Ti，W，Zr，Hf，Nb，Mo，V，Cr或B中的至少一种非磁性元素。在具有MgO隧道势垒的TMR堆叠中，dR / R> 60％，λ 〜1×10-6，当FL1为CoFe / CoFeB / CoFe时，RA = 1.2ohm-um2，FL2为CoFe / NiFe / CoFe，插入层为CoTa或CoFeBTa。

76. 发明申请

US20130029182A1 CoFe/Ni Multilayer Film with Perpendicular Anisotropy for Microwave Assisted Magnetic Recording 审中-公开
公开(公告)号：US20130029182A1
公开(公告)日：2013-01-31
申请号：US13645947
申请日：2012-10-05
申请人： Kunliang Zhang , Min Li , Yuchen Zhou
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： G11C7/00
CPC分类号： G11B5/235 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11B5/1278 , G11B5/3153 , G11B5/33 , G11B5/3909 , G11B5/3967 , G11B2005/0024 , G11B2005/3996 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01F1/0579 , H01F10/325 , H01F10/3254 , H01F10/3259 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01F41/305 , H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129 , Y10T428/115
摘要： A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.

77. 发明申请

US20130029035A1 CoFe/Ni Multilayer Film with Perpendicular Anisotropy for Microwave Assisted Magnetic Recording 审中-公开
公开(公告)号：US20130029035A1
公开(公告)日：2013-01-31
申请号：US13645958
申请日：2012-10-05
申请人： Kunliang Zhang , Min Li , Yuchen Zhou
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： H01F41/22 , C23C14/35
CPC分类号： G11B5/235 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11B5/1278 , G11B5/3153 , G11B5/33 , G11B5/3909 , G11B5/3967 , G11B2005/0024 , G11B2005/3996 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01F1/0579 , H01F10/325 , H01F10/3254 , H01F10/3259 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01F41/305 , H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129 , Y10T428/115
摘要： A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.

78. 发明授权

US08335105B2 Magnetic memory cell 有权
标题翻译：磁记忆体
公开(公告)号：US08335105B2
公开(公告)日：2012-12-18
申请号：US11715097
申请日：2007-03-07
申请人： Hui-Chuan Wang , Tong Zhao , Kunliang Zhang , Min Li
发明人： Hui-Chuan Wang , Tong Zhao , Kunliang Zhang , Min Li
IPC分类号： G11C11/14
CPC分类号： G11C11/15
摘要： By inserting a spin polarizing layer (typically pure iron) within the free layer of a MTJ or GMR memory cell, dR/R can be improved without significantly affecting other free layer properties such as Hc. Additional performance improvements can be achieved by also inserting a surfactant layer (typically oxygen) within the free layer.
摘要翻译：通过在MTJ或GMR存储器单元的自由层内插入自旋偏振层（通常为纯铁），可以改善dR / R，而不显着影响其它自由层性质如Hc。还可以通过在自由层内插入表面活性剂层（通常为氧）来实现另外的性能改进。

79. 发明授权

US08325449B2 CPP device with improved current confining structure and process 有权
标题翻译： CPP器件具有改进的电流限制结构和工艺
公开(公告)号：US08325449B2
公开(公告)日：2012-12-04
申请号：US11895719
申请日：2007-08-27
申请人： Kunliang Zhang , Min Li , Yue Liu
发明人： Kunliang Zhang , Min Li , Yue Liu
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/39 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3909 , G11B2005/3996 , Y10T29/49021
摘要： Plasma nitridation, in place of plasma oxidation, is used for the formation of a CCP layer. Al, Mg, Hf, etc. all form insulating nitrides under these conditions. Maintaining the structure at a temperature of at least 150° C. during plasma nitridation and/or performing post annealing at a temperature of 220° C. or higher, ensures that no copper nitride can form. Additionally, unintended oxidation by molecular oxygen of the exposed magnetic layers (mainly the pinned and free layers) is also avoided.
摘要翻译：等离子体氮化代替等离子体氧化，用于形成CCP层。 Al，Mg，Hf等都在这些条件下形成绝缘氮化物。在等离子体氮化和/或在220℃以上的温度下进行后退火时，将结构维持在至少150℃的温度下，确保不会形成氮化铜。此外，也避免了暴露的磁性层（主要是固定和自由层）的分子氧的非预期氧化。

80. 发明授权

US08274811B2 Assisting FGL oscillations with perpendicular anisotropy for MAMR 有权
标题翻译：为MAMR协助垂直各向异性的FGL振荡
公开(公告)号：US08274811B2
公开(公告)日：2012-09-25
申请号：US12927699
申请日：2010-11-22
申请人： Kunliang Zhang , Min Li , Yuchen Zhou
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： G11B5/127 , G11C11/15 , G11C11/16 , H01L43/12
CPC分类号： H03B15/006 , B82Y40/00 , G11B5/3146 , G11B2005/0024 , G11C11/161 , G11C11/1675 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01F41/306 , H01L43/08 , Y10T29/49034 , Y10T428/11 , Y10T428/1107 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/1171 , Y10T428/1193
摘要： A spin transfer oscillator (STO) structure is disclosed that includes two assist layers with perpendicular magnetic anisotropy (PMA) to enable a field generation layer (FGL) to achieve an oscillation state at lower current density for MAMR applications. In one embodiment, the STO is formed between a main pole and write shield and the FGL has a synthetic anti-ferromagnetic structure. The STO configuration may be represented by seed layer/spin injection layer (SIL)/spacer/PMA layer 1/FGL/spacer/PMA layer 2/capping layer. The spacer may be Cu for giant magnetoresistive (GMR) devices or a metal oxide for tunneling magnetoresistive (TMR) devices. Alternatively, the FGL is a single ferromagnetic layer and the second PMA assist layer has a synthetic structure including two PMA layers with magnetic moment in opposite directions in a seed layer/SIL/spacer/PMA assist 1/FGL/spacer/PMA assist 2/capping layer configuration. SIL and PMA assist layers are laminates of (CoFe/Ni)x or the like.
摘要翻译：公开了一种自旋转移振荡器（STO）结构，其包括具有垂直磁各向异性（PMA）的两个辅助层，以使场产生层（FGL）能够在较低电流密度下实现用于MAMR应用的振荡状态。在一个实施例中，STO形成在主极和写保护罩之间，并且FGL具有合成的反铁磁结构。 STO配置可以由种子层/自旋注入层（SIL）/间隔物/ PMA层1 / FGL /间隔物/ PMA层2 /覆盖层表示。间隔物可以是用于巨磁阻（GMR）器件的Cu或用于隧道磁阻（TMR）器件的金属氧化物。或者，FGL是单个铁磁层，并且第二PMA辅助层具有合成结构，其包括在籽晶层/ SIL /间隔物/ PMA辅助1 / FGL /间隔物/ PMA辅助2/2中具有相反方向的磁矩的两个PMA层，覆盖层配置。 SIL和PMA辅助层是（CoFe / Ni）x等的层压体。

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