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81. 发明申请

US20100244023A1 Programmable resistance memory 有权
标题翻译：可编程电阻记忆
公开(公告)号：US20100244023A1
公开(公告)日：2010-09-30
申请号：US12383489
申请日：2009-03-25
申请人： Ward Parkinnson
发明人： Ward Parkinnson
IPC分类号： H01L23/58 , H01L21/66 , H01L45/00
CPC分类号： H01L27/24 , G11C13/0004 , G11C29/24 , H01L2924/0002 , H01L2924/00
摘要： A rewritable nonvolatile memory includes a test cell that is dedicated to testing the storage characteristics of other, similar, storage cells formed within the same integrated circuit memory. The test cell may be share the same structure and composition as storage cells and may be positioned proximate storage cells.
摘要翻译：可重写非易失性存储器包括专用于测试形成在同一集成电路存储器内的其它类似存储单元的存储特性的测试单元。测试单元可以与存储单元共享相同的结构和组成，并且可以位于存储单元附近。

82. 发明申请

US20100182825A1 Programmable resistance memory 有权
标题翻译：可编程电阻记忆
公开(公告)号：US20100182825A1
公开(公告)日：2010-07-22
申请号：US12321223
申请日：2009-01-20
申请人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
发明人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
IPC分类号： G11C11/00 , H01L21/00 , G11C11/416
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/0035
摘要： A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
摘要翻译：存储器包括具有高比例的动态范围与漂移系数相变存储器件的可编程电阻阵列。

83. 发明授权

US07755074B2 Low area contact phase-change memory 有权
标题翻译：低面积触点相变存储器
公开(公告)号：US07755074B2
公开(公告)日：2010-07-13
申请号：US11871786
申请日：2007-10-12
申请人： Sergey Kostylev , Tyler Lowrey
发明人： Sergey Kostylev , Tyler Lowrey
IPC分类号： H01L29/04 , H01L47/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/148
摘要： A memory device includes a first electrode and a second electrode. A phase-change material is disposed between the first and second electrodes. The phase-change material is in electrical communication with the first and second electrodes at a first contact region and a second contact region respectively. The first and second contact regions are similar in contact area. The device enables scaling of reset current to smaller dimensions without encountering a limitation imposed by an offset current.
摘要翻译：存储器件包括第一电极和第二电极。相变材料设置在第一和第二电极之间。相变材料分别在第一接触区域和第二接触区域处与第一和第二电极电连通。第一和第二接触区域的接触面积相似。该器件能够将复位电流缩放到较小的尺寸，而不会受到偏移电流施加的限制。

84. 发明授权

US07706178B2 Programmable matrix array with phase-change material 有权
标题翻译：具相变材料的可编程矩阵阵列
公开(公告)号：US07706178B2
公开(公告)日：2010-04-27
申请号：US12069092
申请日：2008-02-06
申请人： Ward Parkinson
发明人： Ward Parkinson
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C2213/77 , H01L27/2463 , H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/144 , H03K19/17736 , Y10S438/90
摘要： A phase-change material is proposed for coupling interconnect lines an electrically programmable matrix array. Leakage may be reduced by optionally placing a thin insulating breakdown layer between the phase change material and at least one of the lines. The matrix array may be used in a programmable logic device. The logic portions of the programmable logic device may be tri-stated.
摘要翻译：提出了一种相变材料用于将互连线耦合到电可编程矩阵阵列。可以通过在相变材料和至少一条线之间选择性地放置薄的绝缘击穿层来降低泄漏。矩阵阵列可以用在可编程逻辑器件中。可编程逻辑器件的逻辑部分可以是三态的。

85. 发明申请

US20090310402A1 Method and apparatus for decoding memory 有权
标题翻译：用于解码存储器的方法和装置
公开(公告)号：US20090310402A1
公开(公告)日：2009-12-17
申请号：US12214144
申请日：2008-06-17
申请人： Ward Parkinson
发明人： Ward Parkinson
IPC分类号： G11C11/00
CPC分类号： G11C13/0023 , G11C8/08 , G11C8/10 , G11C13/0004 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C2213/71 , G11C2213/72 , G11C2213/76
摘要： A thin-film memory may include a thin-film transistor-free address decoder in conjunction with thin-film memory elements to yield an all-thin-film memory. Such a thin-film memory excludes all single-crystal electronic devices and may be formed, for example, on a low-cost substrate, such as fiberglass, glass or ceramic. The memory may be configured for operation with an external memory controller.
摘要翻译：薄膜存储器可以包括结合薄膜存储器元件的薄膜无晶体管地址解码器以产生全薄膜存储器。这样的薄膜存储器不包括所有单晶电子器件，并且可以例如形成在诸如玻璃纤维，玻璃或陶瓷的低成本基底上。存储器可以被配置为与外部存储器控制器一起操作。

86. 发明申请

US20090307410A1 Memory controller 有权
标题翻译：内存控制器
公开(公告)号：US20090307410A1
公开(公告)日：2009-12-10
申请号：US12157083
申请日：2008-06-06
申请人： Tyler Lowrey
发明人： Tyler Lowrey
IPC分类号： G06F1/04 , G06F12/00 , G11C11/34
CPC分类号： G11C5/025 , G11C5/02 , G11C8/10 , G11C13/0004 , G11C13/003 , G11C2213/52 , G11C2213/71
摘要： A memory controller provides interfaces for one or more thin film memory circuits. The controller may include an analog interface for one or more thin film memories. Such an analog interface may accept analog signals representative of an associated thin film memory's memory state, condition and sense the signal, and encode the signal into a digital value.
摘要翻译：存储器控制器为一个或多个薄膜存储器电路提供接口。控制器可以包括用于一个或多个薄膜存储器的模拟接口。这样的模拟接口可以接受表示相关联的薄膜存储器的存储器状态的模拟信号，条件和感测信号，并将信号编码为数字值。

87. 发明申请

US20090303784A1 Asymetric threshold three terminal switching device 有权
标题翻译：不对称门限三端开关器件
公开(公告)号：US20090303784A1
公开(公告)日：2009-12-10
申请号：US12157076
申请日：2008-06-06
申请人： Tyler Lowrey
发明人： Tyler Lowrey
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： G11C5/02 , G11C13/0004 , H01L27/2436 , H01L27/2481 , H01L45/04 , H01L45/1206 , H01L45/1233 , H01L45/141 , H01L45/144
摘要： An asymmetric-threshold three-terminal electronic switching device includes three terminals coupled to a threshold-switching material. A signal applied across first and second terminals affects an electrical characteristic between the second and third electrodes to a greater extent than the same signal applied across the first and third electrodes. The affected electrical characteristic may be a threshold voltage or conductivity, for example.
摘要翻译：非对称阈值三端子电子开关器件包括耦合到阈值切换材料的三个端子。施加在第一和第二端子上的信号比施加在第一和第三电极上的相同信号更大程度地影响第二和第三电极之间的电特性。例如，受影响的电特性可以是阈值电压或电导率。

88. 发明申请

US20090285016A1 Circuit for Reading Memory Cells 有权
标题翻译：读取存储单元的电路
公开(公告)号：US20090285016A1
公开(公告)日：2009-11-19
申请号：US12491352
申请日：2009-06-25
申请人： Ferdinando Bedeschi , Claudio Resta
发明人： Ferdinando Bedeschi , Claudio Resta
IPC分类号： G11C11/00 , G11C7/10 , G11C7/00
CPC分类号： G11C13/0004 , G11C11/5678 , G11C13/004 , G11C2013/0054 , G11C2211/5645 , G11C2213/79
摘要： A read circuit for reading at least one memory cell adapted to storing a logic value, the at least one memory cell including: a storage element made of a phase-change material; and an access element for coupling the storage element to the read circuit in response to a selection of the memory cell, the read circuit including: a sense current supply arrangement for supplying a sense current to the at least one memory cell; and at least one sense amplifier for determining the logic value stored in the memory cell on the basis of a voltage developing thereacross, the at least one sense amplifier comprising a voltage limiting circuit for limiting the voltage across the memory cell for preserving the stored logic value, wherein the voltage limiting circuit includes a current sinker for sinking a clamping current, which is subtracted from the sense current and depends on the stored logic value.
摘要翻译：一种用于读取适于存储逻辑值的至少一个存储单元的读取电路，所述至少一个存储单元包括：由相变材料制成的存储元件; 以及用于响应于所述存储单元的选择将所述存储元件耦合到所述读取电路的访问元件，所述读取电路包括：用于向所述至少一个存储器单元提供感测电流的感测电流供应装置; 以及至少一个读出放大器，用于基于在其上形成的电压来确定存储在存储器单元中的逻辑值，所述至少一个读出放大器包括用于限制存储器单元两端的电压的电压限制电路，用于保存所存储的逻辑值其中所述电压限制电路包括用于吸收钳位电流的电流沉降片，其从所述感测电流中减去并且取决于所存储的逻辑值。

89. 发明授权

US07618840B2 Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof 有权
标题翻译：亚光刻接触结构，特别是相变存储单元，及其制造方法
公开(公告)号：US07618840B2
公开(公告)日：2009-11-17
申请号：US11468153
申请日：2006-08-29
申请人： Osama Khouri , Giorgio Pollaccia , Fabio Pellizzer
发明人： Osama Khouri , Giorgio Pollaccia , Fabio Pellizzer
IPC分类号： H01L21/00
CPC分类号： H01L45/06 , H01L27/2445 , H01L45/122 , H01L45/126 , H01L45/1273 , H01L45/144 , H01L45/16
摘要： A contact structure for a PCM device is formed by an elongated formation having a longitudinal extension parallel to the upper surface of the body and an end face extending in a vertical plane. The end face is in contact with a bottom portion of an active region of chalcogenic material so that the dimensions of the contact area defined by the end face are determined by the thickness of the elongated formation and by the width thereof.
摘要翻译：用于PCM装置的接触结构通过具有平行于主体的上表面的纵向延伸的细长结构和在垂直平面中延伸的端面形成。端面与硫属活性材料的活性区域的底部接触，使得由端面限定的接触面积的尺寸由细长结构体的厚度及其宽度确定。

90. 发明申请

US20090227092A1 Temperature and pressure control methods to fill features with programmable resistance and switching devices 有权
标题翻译：温度和压力控制方法来填充具有可编程电阻和开关器件的特性
公开(公告)号：US20090227092A1
公开(公告)日：2009-09-10
申请号：US12075180
申请日：2008-03-10
申请人： Jeff Fournier , Wolodymyr Czubatyj , Tyler Lowrey
发明人： Jeff Fournier , Wolodymyr Czubatyj , Tyler Lowrey
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/1641
摘要： A programmable resistance, chalcogenide, switching or phase-change material device includes a substrate with a plurality of stacked layers including a conducting bottom electrode layer, an insulative layer having an opening formed therein, an active material layer deposited over both the insulative layer, within the opening, and over selected portions of the bottom electrode, and a top electrode layer deposited over the active material layer. The device uses temperature and pressure control methods to increase surface mobility in an active material layer, thus providing complete coverage or fill of the openings in the insulative layer, selected exposed portions of the bottom electrode layer, and the insulative layer.
摘要翻译：可编程电阻，硫族化物，开关或相变材料器件包括具有多个堆叠层的衬底，其包括导电底电极层，其中形成有开口的绝缘层，沉积在绝缘层上的活性材料层，开口和底部电极的选定部分，以及沉积在活性材料层上的顶部电极层。该装置使用温度和压力控制方法来增加活性材料层中的表面迁移率，从而提供绝缘层中的开口，底部电极层的选定的暴露部分和绝缘层的完全覆盖或填充。

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