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    • 7. 发明授权
    • Trimbit circuit for flash memory
    • 闪存集成电路的Trimbit电路
    • US5933370A
    • 1999-08-03
    • US5074
    • 1998-01-09
    • Peter HolzmannJames Brennan, Jr.Anthony DunneHieu Van Tran
    • Peter HolzmannJames Brennan, Jr.Anthony DunneHieu Van Tran
    • G11C16/06G11C29/00G11C29/04G11C16/04
    • G11C29/789
    • A trimbit circuit for flash memory integrated circuits is described. The trimbit circuit is used to store the addresses of bad rows and/or columns in flash memory arrays. Furthermore the trimbit circuit is used to store the trimbits for trimable circuits in the integrated circuit, i.e. voltage references, precision oscillator, etc. The invention includes a row of flash memory trimcells and a trimcell differential amplifier circuit. The trimcell differential amplifier circuit can serially shift in trimbits into a latch and serially shift out trimbits without having to program the flash memory trimcells. The final settings of the trimbits can be programmed by means of a high voltage buffer. A non-overlapping clock generator and additional logic is also included to control the circuit.
    • 描述了闪存集成电路的三段电路。 trimbit电路用于存储闪存阵列中不良行和/或列的地址。 此外,trimbit电路用于存储集成电路中的可修整电路的三角形,即电压基准,精密振荡器等。本发明包括一排闪存微调单元和微调单元差分放大器电路。 微调单元差分放大器电路可以将三位组串行移位到锁存器中,并且串行地移出三位符,而不必对闪存微调单元进行编程。 可以通过高电压缓冲区对三角形的最终设置进行编程。 还包括不重叠的时钟发生器和附加逻辑来控制电路。