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1. 发明申请

US20180163323A1 METHOD FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL AND APPARATUS FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL 审中-公开
公开(公告)号：US20180163323A1
公开(公告)日：2018-06-14
申请号：US15891764
申请日：2018-02-08
申请人： Takashi Satoh , Naoya Miyoshi , Junichi Wada , Masahiro Hayashi , Seiji Sarayama , Haruo Sunakawa , Yujirou Ishihara , Akira Usui
发明人： Takashi Satoh , Naoya Miyoshi , Junichi Wada , Masahiro Hayashi , Seiji Sarayama , Haruo Sunakawa , Yujirou Ishihara , Akira Usui
IPC分类号： C30B29/40 , C30B19/04 , C30B19/06 , C30B19/10 , C30B17/00 , C30B35/00
CPC分类号： C30B29/403 , C30B9/10 , C30B9/12 , C30B17/00 , C30B19/02 , C30B19/04 , C30B19/06 , C30B19/106 , C30B29/406 , C30B35/007
摘要： A method for producing a group 13 nitride single crystal includes dissolving and crystal growing. The dissolving includes dissolving nitrogen in a mixed melt in a reaction vessel that contains the mixed melt, a seed crystal, and a surrounding member. The mixed melt contains an alkali metal and a group 13 metal. The seed crystal is a seed crystal that is placed in the mixed melt and includes a group 13 nitride crystal in which a principal face is a c-plane. The surrounding member is arranged so as to surround the entire area of a side face of the seed crystal. The crystal growing includes growing a group 13 nitride crystal on the seed crystal.

2. 发明授权

US10100426B2 Method for producing gallium nitride crystal 有权
公开(公告)号：US10100426B2
公开(公告)日：2018-10-16
申请号：US15124794
申请日：2014-11-27
申请人： Takashi Satoh , Seiji Sarayama , Masahiro Hayashi , Naoya Miyoshi , Chiharu Kimura , Junichi Wada
发明人： Takashi Satoh , Seiji Sarayama , Masahiro Hayashi , Naoya Miyoshi , Chiharu Kimura , Junichi Wada
IPC分类号： C30B9/10 , C30B29/40 , C30B9/12 , C30B35/00
摘要： A method for producing a gallium nitride crystal includes growing a gallium nitride crystal 5 by dissolving nitrogen in a mixed melt including gallium and sodium, and collecting the gallium 55 separated from an alloy 51 including the gallium and the sodium by reacting the alloy 51 and a liquid 52 that ionizes the sodium and separating sodium ions and the gallium 55 from the alloy.

3. 发明申请

US20160348272A1 METHOD FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL 审中-公开
标题翻译： 13号硝酸盐晶体和13号硝酸盐晶体的制备方法
公开(公告)号：US20160348272A1
公开(公告)日：2016-12-01
申请号：US15115154
申请日：2015-02-19
申请人： Masahiro HAYASHI , Takashi SATOH , Naoya MIYOSHI , Junichi Wada , Seiji SARAYAMA
发明人： Masahiro HAYASHI , Takashi SATOH , Naoya MIYOSHI , Junichi Wada , Seiji SARAYAMA
IPC分类号： C30B19/06 , C30B29/68 , C30B9/12 , C30B29/40 , C30B19/02 , C30B19/12
CPC分类号： C30B19/066 , C30B9/10 , C30B9/12 , C30B19/02 , C30B19/06 , C30B19/12 , C30B29/406 , C30B29/68 , H01L21/0245 , H01L21/0254 , H01L21/02625 , H01L33/0075
摘要： In a method for manufacturing a group 13 nitride crystal, a seed crystal made of a group 13 nitride crystal is arranged in a mixed melt containing an alkali metal and a group 13 element, and nitrogen is supplied to the mixed melt to grow the group 13 nitride crystal on a principal plane of the seed crystal. The seed crystal is manufactured by vapor phase epitaxy. At least a part of contact members coming into contact with the mixed melt in a reaction vessel accommodating the mixed melt is made of Al2O3. An interface layer having a photoluminescence emission peak whose wavelength is longer than the wavelength of a photoluminescence emission peak of the grown group 13 nitride crystal is formed between the seed crystal and the grown group nitride crystal.
摘要翻译：在13族氮化物晶体的制造方法中，将由13族氮化物晶体构成的晶种配置在含有碱金属和13族元素的混合熔体中，向混合熔体供给氮以使第13族生长氮化物晶体在晶种的主平面上。晶种通过气相外延制造。在容纳混合熔体的反应容器中与接触构件接触的至少一部分由Al 2 O 3制成。在晶种和生长氮化物晶体之间形成有具有比生长组13氮化物晶体的发光发光峰的波长长的光致发光峰的界面层。

4. 发明申请

US20140077218A1 GROUP 13 NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL SUBSTRATE, AND METHOD OF MANUFACTURING GROUP 13 NITRIDE CRYSTAL 审中-公开
标题翻译：第13组氮化物晶体，13号硝酸盐晶体基板，以及制造13号硝酸盐晶体的方法
公开(公告)号：US20140077218A1
公开(公告)日：2014-03-20
申请号：US14023702
申请日：2013-09-11
申请人： Masahiro Hayashi , Takashi Satoh , Chiharu Kimura , Naoya Miyoshi , Akishige Murakami , Shinsuke Miyake , Junichi Wada , Seiji Sarayama
发明人： Masahiro Hayashi , Takashi Satoh , Chiharu Kimura , Naoya Miyoshi , Akishige Murakami , Shinsuke Miyake , Junichi Wada , Seiji Sarayama
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , C30B9/12 , C30B29/403
摘要： A group 13 nitride crystal having a hexagonal crystal structure contains at least a nitrogen atom and at least one metal atom selected from a group consisting of B, Al, Ga, In and Tl. Dislocation density of basal plane dislocations in a cross section parallel to a c-axis is 104 cm−2 or more.
摘要翻译：具有六方晶系结构的13族氮化物晶体至少含有氮原子和至少一种选自B，Al，Ga，In和Tl的金属原子。平行于c轴的截面中的基面位错的位错密度为104cm -2以上。

5. 发明申请

US20110031622A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于制造半导体器件和半导体器件的方法
公开(公告)号：US20110031622A1
公开(公告)日：2011-02-10
申请号：US12853132
申请日：2010-08-09
申请人： Makoto HONDA , Junichi Wada
发明人： Makoto HONDA , Junichi Wada
IPC分类号： H01L23/498 , H01L21/3205
CPC分类号： H01L21/28518 , H01L21/28052
摘要： A method for fabricating a semiconductor device according to an embodiment includes: forming a nickel (Ni) film containing phosphorus (P) elements on a substrate having at least one of a diffusion layer formed by using silicon (Si) and a gate electrode formed by using Si exposed on a surface thereof; and forming a nickel silicide (NiSi) film containing P elements on the substrate from the Ni film containing the P elements and Si in at least one of the diffusion layer and the gate electrode.
摘要翻译：根据实施例的制造半导体器件的方法包括：在具有通过使用硅（Si）形成的扩散层和由（Si）形成的扩散层中的至少一个的基板上形成含有磷（P）元素的镍（Ni）膜，使用暴露在其表面上的Si; 以及从所述扩散层和所述栅电极中的至少一个中含有所述P元素的Ni膜和所述Si形成在所述基板上含有P元素的硅化镍（NiSi）膜。

6. 发明申请

US20090020883A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于制造半导体器件的半导体器件和方法
公开(公告)号：US20090020883A1
公开(公告)日：2009-01-22
申请号：US12175132
申请日：2008-07-17
申请人： Kayo Nomura , Junichi Wada , Hideto Matsuyama , Masayuki Kitamura
发明人： Kayo Nomura , Junichi Wada , Hideto Matsuyama , Masayuki Kitamura
IPC分类号： H01L23/48 , H01L21/44
CPC分类号： H01L21/76877 , H01L21/76831 , H01L21/76843 , H01L21/76855 , H01L21/76867 , H01L21/76873 , H01L23/485 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first contact plug arranged above a semiconductor substrate and using aluminum (Al) as a material; a second contact plug arranged on and in contact with the first contact plug and using a refractory metal material; a first dielectric film arranged on a flank side of the first and second contact plugs; a wire arranged above the second contact plug and using copper (Cu) as a material; a second dielectric film arranged on a flank side of the wire; and a barrier film arranged at least between the wire and the first dielectric film and between the wire and the second dielectric film.
摘要翻译：半导体器件包括布置在半导体衬底之上并使用铝（Al）作为材料的第一接触插塞; 布置在第一接触插塞上并与第一接触插塞接触并使用难熔金属材料的第二接触插塞; 布置在第一和第二接触插塞的侧面上的第一电介质膜; 布置在第二接触塞上方并使用铜（Cu）作为材料的导线; 布置在所述导线的侧面侧的第二电介质膜; 以及阻挡膜，其至少布置在所述线和所述第一电介质膜之间以及所述线与所述第二电介质膜之间。

7. 发明申请

US20060097399A1 Method for generating pattern, method for manufacturing semiconductor device, semiconductor device, and computer program product 失效
标题翻译：产生图案的方法，制造半导体器件的方法，半导体器件和计算机程序产品
公开(公告)号：US20060097399A1
公开(公告)日：2006-05-11
申请号：US11265231
申请日：2005-11-03
申请人： Masaaki Hatano , Motoya Okazaki , Junichi Wada , Takeshi Nishioka , Hisashi Kaneko , Takeshi Fujimaki , Kazuyuki Higashi , Kenji Yoshida , Noriaki Matsunaga
发明人： Masaaki Hatano , Motoya Okazaki , Junichi Wada , Takeshi Nishioka , Hisashi Kaneko , Takeshi Fujimaki , Kazuyuki Higashi , Kenji Yoshida , Noriaki Matsunaga
IPC分类号： H01L23/48
CPC分类号： G06F17/5068
摘要： A method for generating a pattern includes reading out an interconnect layout and a hole layout, the interconnect layout prescribing interconnect patterns, the hole layout prescribing hole patterns configured to connect to the interconnect patterns; extracting one of the hole patterns to be connected within the same interconnect layer level to one of the interconnect patterns in a pattern processing area; extracting a first processing area including the extracted hole pattern; calculating a first pattern density of the interconnect patterns included in the first processing area; and generating first additional patterns in the first processing area based on the first pattern density.
摘要翻译：一种用于产生图案的方法包括：读出互连布局和孔布局;布置规定互连图案的布局布局;布置配置为连接到互连图案的孔图案的孔布局; 在图案处理区域中将在相同互连层级中连接的孔图案中的一个提取到所述互连图案之一; 提取包括所提取的孔图案的第一处理区域; 计算包括在第一处理区域中的互连图案的第一图案密度; 以及基于所述第一图案密度在所述第一处理区域中生成第一附加图案。

8. 发明授权

US06720253B2 Method of manufacturing semiconductor device having an aluminum wiring layer 有权
标题翻译：制造具有铝布线层的半导体器件的方法
公开(公告)号：US06720253B2
公开(公告)日：2004-04-13
申请号：US09944095
申请日：2001-09-04
申请人： Junichi Wada , Yasushi Oikawa , Tomio Katata
发明人： Junichi Wada , Yasushi Oikawa , Tomio Katata
IPC分类号： H01L214763
CPC分类号： H01L21/76858 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76876 , H01L21/76882 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is constituted by embedding an Al wiring layer in a second object formed on a interlayer-insulating film on one principal plane of a semiconductor substrate and connecting with an Al wiring formed on the substrate and at least, an Nb liner film and NbAl alloy film are formed between the second object and the Al wiring layer.
摘要翻译：半导体器件通过在半导体衬底的一个主平面上的层间绝缘膜上形成的第二物体中嵌入Al布线层，并与形成在衬底上的Al布线连接，至少形成Nb衬垫膜和NbAl 在第二物体和Al配线层之间形成合金膜。

9. 发明授权

US06229211B1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06229211B1
公开(公告)日：2001-05-08
申请号：US09362683
申请日：1999-07-29
申请人： Takashi Kawanoue , Junichi Wada , Tetsuo Matsuda , Hisashi Kaneko
发明人： Takashi Kawanoue , Junichi Wada , Tetsuo Matsuda , Hisashi Kaneko
IPC分类号： H01L2348
CPC分类号： H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L23/53209 , H01L23/53276 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device comprises a base layer, a barrier metal layer formed on the base layer and a metal interconnect formed on the barrier metal layer, the barrier metal layer being made of at least one element &agr; selected from metal elements and at least one element &bgr; selected from a group of boron, oxygen, carbon and nitrogen and having at least two compound films &agr;&bgr;n with different compositional ratios in atomic level arranged to form a laminate. When the elements &agr; contained in the compound films &agr;&bgr;n are same and identical and at least one of the at least two compound films &agr;&bgr;n is a compound film &agr;&bgr;x (x>1), the via resistance and the interconnect resistance of the device can be reduced, while maintaining the high barrier effect.
摘要翻译：半导体器件包括基底层，形成在基底层上的阻挡金属层和形成在阻挡金属层上的金属互连，阻挡金属层由选自金属元素和至少一个元素β的至少一种元素α制成选自一组硼，氧，碳和氮，并且具有至少两个具有原子级别的不同组成比的英文字母复合膜，以形成层压体。当复合薄膜字母表中包含的元素α相同且相同时，至少两个化合物薄膜字母表中的至少一个是化合物薄膜字母（x> 1）时，器件的通孔电阻和互连电阻可以减小同时保持高屏障效果。

10. 发明授权

US5692483A Ignition coil used for an internal combustion engine 失效
标题翻译：用于内燃机的点火线圈
公开(公告)号：US5692483A
公开(公告)日：1997-12-02
申请号：US673106
申请日：1996-07-01
申请人： Junichi Wada , Akiyoshi Yamamoto , Masahiro Inagaki
发明人： Junichi Wada , Akiyoshi Yamamoto , Masahiro Inagaki
IPC分类号： F02P3/02 , H01F27/28 , H01F38/12 , H01F41/06 , F02P11/00
CPC分类号： F02P3/02 , H01F27/2823 , H01F38/12 , H01F41/086
摘要： Two separate iron cores 31 and 32, forming a magnetic path, are engaged with both ends of a cylindrical coil body 12. Each iron core has upper and lower limbs disposed in parallel with each other. Cylindrical coil body 12 accommodates a primary coil 221 and a secondary coil 223 therein, and has a core-insertion hole 4 for receiving the iron cores 31 and 32. The upper limb of each iron core is inserted in core-insertion hole 4 while lower limb extends along an outer wall of cylindrical coil body 12, so that cylindrical coil body 12 is engaged with iron cores 31 and 32 by these upper and lower limbs clamping between an inside wall of core-insertion hole 4 and the outer wall of cylindrical coil body 12. Primary coil 221 has an outermost layer formed into a dense alignment winding layer at its end part and into a non-dense alignment winding layer at its middle part. A connector la is integrally formed with a coil casing 1 of coil body 12, so as to extend in a direction perpendicular to an insertion direction of an ignitor 211 and closely to an opening portion of an ignitor housing 213 formed in coil casing 1.
摘要翻译：形成磁路的两个分离的铁芯31和32与圆柱形线圈体12的两端接合。每个铁芯具有彼此平行设置的上肢和下肢。圆柱形线圈体12容纳初级线圈221和次级线圈223，并且具有用于容纳铁芯31和32的芯插入孔4.每个铁芯的上肢插入芯插入孔4中，同时较低肢体沿着圆柱形线圈体12的外壁延伸，使得圆柱形线圈体12通过夹持在芯插入孔4的内壁和圆柱形线圈的外壁之间的这些上下肢与铁芯31和32接合初级线圈221具有在其端部处形成为致密的取向绕组层的最外层，并且在其中间部分形成非致密的取向绕组层。连接器1a与线圈体12的线圈壳体1一体地形成，以便在垂直于点火器211的插入方向的方向上延伸，并且紧密地连接到形成在线圈壳体1中的点火器壳体213的开口部分。

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