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1. 发明申请

US20180358826A1 WIRELESS CHARGING STAND 审中-公开
公开(公告)号：US20180358826A1
公开(公告)日：2018-12-13
申请号：US15756053
申请日：2015-09-25
申请人： Stephen John ALLEN , Gregory A. PEEK , Yoshifumi NISHI , Rolf LAIDO , Shaun Gerrit IMMEKER , Kerry A. STEVENS , Andrew LARSON , Ralph V. MIELE , Kimi JENSEN , Duck Young KONG , Dan H. GERBUS , Intel Corporation
发明人： Stephen John Allen , Gregory A. Peek , Yoshifumi Nishi , Rolf Laido , Shaun Gerrit Immeker , Kerry A. Stevens , Andrew Larson , Ralph V. Miele , Kimi Jensen , Duck Young Kong , Dan H. Gerbus
IPC分类号： H02J7/00 , H02J7/02 , H02J50/12 , H02J50/40
摘要： Particular embodiments described herein provide for an electronic device, that includes a first housing and a wireless charging stand. The first housing can include a display. The wireless charging stand can include a power receiving unit and is configured to wireless charge the electronic device and support the first housing at different viewing angles of the display.

2. 发明授权

US10720783B2 Wireless charging stand 有权
公开(公告)号：US10720783B2
公开(公告)日：2020-07-21
申请号：US15756053
申请日：2015-09-25
申请人： Intel Corporation , Stephen John Allen , Gregory A. Peek , Yoshifumi Nishi , Rolf Laido , Shaun Gerrit Immeker , Kerry A. Stevens , Andrew Larson , Ralph V. Miele , Kimi Jensen , Duck Young Kong , Dan H. Gerbus
发明人： Stephen John Allen , Gregory A. Peek , Yoshifumi Nishi , Rolf Laido , Shaun Gerrit Immeker , Kerry A. Stevens , Andrew Larson , Ralph V. Miele , Kimi Jensen , Duck Young Kong , Dan H. Gerbus
IPC分类号： H02J7/02 , H02J7/00 , H02J50/10 , H02J50/12 , H02J50/40
摘要： Particular embodiments described herein provide for an electronic device, that includes a first housing and a wireless charging stand. The first housing can include a display. The wireless charging stand can include a power receiving unit and is configured to wireless charge the electronic device and support the first housing at different viewing angles of the display.

3. 发明申请

US20170075422A1 Wearable Devices and Associated Control of Media Devices 审中-公开
标题翻译：可穿戴设备和媒体设备的相关控制
公开(公告)号：US20170075422A1
公开(公告)日：2017-03-16
申请号：US15125296
申请日：2014-06-09
申请人： Yanbing SUN , Jian WANG , Mark MACDONALD , Yoshifumi NISHI , Intel Corporation
发明人： Yanbing Sun , Jian Wang , Mark MacDonald , Yoshifumi Nishi
IPC分类号： G06F3/01 , H04R1/10 , G06F3/16
CPC分类号： G06F3/015 , G06F3/165 , H04R1/1016 , H04R1/1041 , H04R5/033
摘要： A wearable device (e.g., a headset (100)) for the human ear (202) and having an infrared (IR) temperature sensor (102) to facilitate control of a media device (700) coupled to the wearable device. The control may be based at least in part on the measured temperature indicated by the IR sensor (102) detecting the wearable device as on (or off) an ear of a user.
摘要翻译：一种用于人耳（202）并且具有红外（IR）温度传感器（102）的可穿戴设备（例如，头戴式耳机（100）），以便于耦合到可穿戴设备的媒体设备（700）的控制。控制可以至少部分地基于由用户的耳朵上的（或关闭）检测可穿戴设备的IR传感器（102）所指示的测量温度。

4. 发明授权

US09472756B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US09472756B2
公开(公告)日：2016-10-18
申请号：US13714946
申请日：2012-12-14
申请人： Takayuki Ishikawa , Yoshifumi Nishi , Shosuke Fujii
发明人： Takayuki Ishikawa , Yoshifumi Nishi , Shosuke Fujii
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L45/14 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/148 , H01L45/165 , H01L45/1658
摘要： According to one embodiment, a nonvolatile memory device includes a first electrode, a second electrode, a variable resistance layer. The variable resistance layer is provided between the first electrode and the second electrode. The variable resistance layer contains impurity of a nonmetallic element. The impurity is at least one selected from the group consisting of S, Se, Te, F, Cl, Br, and I.
摘要翻译：根据一个实施例，非易失性存储器件包括第一电极，第二电极，可变电阻层。可变电阻层设置在第一电极和第二电极之间。可变电阻层含有非金属元素的杂质。杂质是选自S，Se，Te，F，Cl，Br和I中的至少一种。

5. 发明申请

US20150245699A1 APPARATUS AND METHOD FOR KEEPING MOBILE DEVICES WARM IN COLD CLIMATES 有权
标题翻译：用于保持冷气候移动设备的装置和方法
公开(公告)号：US20150245699A1
公开(公告)日：2015-09-03
申请号：US14193507
申请日：2014-02-28
申请人： Yoshifumi Nishi , Douglas Heymann
发明人： Yoshifumi Nishi , Douglas Heymann
IPC分类号： A45F5/00
CPC分类号： A45F5/00 , A45C5/02 , A45C11/00 , A45C2011/002 , A45F2005/002 , A45F2005/006 , A45F2200/0516 , F28D15/0233 , F28D20/02 , F28D2020/0004 , H05K7/20 , H05K7/2039 , Y02E60/145
摘要： An apparatus and method for keeping mobile devices warm in cold climates are disclosed. A particular embodiment includes: a frame structure wherein a first portion of the frame structure being in proximity to the body of a user to receive body heat from the user, the frame structure including a second portion to support electronic components of the apparatus; and a thermal conduit thermally coupled between the first and second portions of the frame structure, the thermal conduit transferring body heat received at the first portion to the electronic components of the apparatus at the second portion.
摘要翻译：公开了一种在寒冷气候中保持移动设备温暖的装置和方法。一个特定实施例包括：框架结构，其中框架结构的第一部分靠近使用者的身体以从使用者接收身体热量，框架结构包括第二部分以支撑设备的电子部件; 以及热耦合在所述框架结构的所述第一和第二部分之间的热导管，所述热导管将在所述第一部分处接收的体热传递到所述第二部分处的所述设备的电子部件。

6. 发明授权

US08658999B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08658999B2
公开(公告)日：2014-02-25
申请号：US13728552
申请日：2012-12-27
申请人： Yoshifumi Nishi , Takao Marukame , Takayuki Ishikawa , Masato Koyama
发明人： Yoshifumi Nishi , Takao Marukame , Takayuki Ishikawa , Masato Koyama
IPC分类号： H01L29/02
CPC分类号： H01L45/14 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/16
摘要： According to an embodiment, a semiconductor device includes first and second memristors. The first memristor includes a first electrode made of a first material, a second electrode made of a second material, and a first resistive switching film arranged between the first and second electrodes. The first resistive switching film is connected to both the first and second electrodes. The second memristor includes a third electrode made of a third material, a fourth electrode made of the second material, and a second resistive switching film arranged between the third and fourth electrodes. The second resistive switching film is connected to both the third and fourth electrodes. The work function of the first material is smaller than that of the second material. The work function of the third material is larger than that of the second material.
摘要翻译：根据实施例，半导体器件包括第一和第二忆阻器。第一忆阻器包括由第一材料制成的第一电极，由第二材料制成的第二电极和布置在第一和第二电极之间的第一电阻切换膜。第一电阻开关膜连接到第一和第二电极。第二忆阻器包括由第三材料制成的第三电极，由第二材料制成的第四电极和布置在第三和第四电极之间的第二电阻切换膜。第二电阻开关膜连接到第三和第四电极。第一材料的功函数小于第二材料的功函数。第三种材料的功函数大于第二种材料的功函数。

7. 发明授权

US08355248B2 Apparatus and system for improved thermal radiation for a mobile computing device and case 有权
标题翻译：用于移动计算设备和壳体的用于改进热辐射的装置和系统
公开(公告)号：US08355248B2
公开(公告)日：2013-01-15
申请号：US12970859
申请日：2010-12-16
申请人： Yoshifumi Nishi
发明人： Yoshifumi Nishi
IPC分类号： H05K7/20
CPC分类号： G06F1/203
摘要： Embodiments of an apparatus and system are described for a thermally radiating mobile computing device and case. An apparatus may comprise, for example, a thermally radiating case for a mobile computing device having a first portion arranged to receive the mobile computing device, a thermally conductive coupling arranged to removably couple the case to one or more internal heat generating components of the mobile computing device, and a second portion thermally coupled to the first portion and the thermally conductive coupling, the second portion comprising one or more thermally conductive materials arranged to radiate thermal energy away from the one or more heat generating components. Other embodiments are described and claimed.
摘要翻译：对于热辐射移动计算设备和情况描述了设备和系统的实施例。设备可以包括例如用于移动计算设备的散热壳体，其具有布置成接收移动计算设备的第一部分，布置成将壳体可移除地耦合到移动设备的一个或多个内部发热部件的导热联接器计算装置，以及热耦合到第一部分和导热联接件的第二部分，第二部分包括一个或多个导热材料，其布置成将热能辐射离开一个或多个发热部件。描述和要求保护其他实施例。

8. 发明申请

US20120117354A1 STORAGE DEVICE IN WHICH FORWARDING-FUNCTION-EQUIPPED MEMORY NODES ARE MUTUALLY CONNECTED AND DATA PROCESSING METHOD 有权
标题翻译：存储设备，其中前向功能的存储器端口被连接和数据处理方法
公开(公告)号：US20120117354A1
公开(公告)日：2012-05-10
申请号：US13293399
申请日：2011-11-10
申请人： Kosuke Tatsumura , Atsuhiro Kinoshita , Hirotaka Nishino , Masamichi Suzuki , Yoshifumi Nishi , Takao Marukame , Takahiro Kurita
发明人： Kosuke Tatsumura , Atsuhiro Kinoshita , Hirotaka Nishino , Masamichi Suzuki , Yoshifumi Nishi , Takao Marukame , Takahiro Kurita
IPC分类号： G06F12/02
CPC分类号： H04L49/253 , G06F3/0605 , G06F3/0635 , G06F3/0656 , G06F3/0658 , G06F3/0683 , H04L12/6418 , H04L45/74
摘要： According to one embodiment, a storage device includes a plurality of memory nodes. Each of memory nodes includes a plurality of input ports, a plurality of output ports, a selector, a packet controller and a memory. The selector outputs a packet input to the input port to one of the output ports. The packet controller controls the selector. The memory stores data. The memory nodes are mutually connected at the input ports and the output ports. The memory node has an address that is determined by its physical position. The packet controller switches the output port that outputs the packet based on information including at least a destination address of the packet and an address of the memory node having the packet controller when receiving a packet that is not addressed to the memory node having the packet controller.
摘要翻译：根据一个实施例，存储设备包括多个存储器节点。每个存储器节点包括多个输入端口，多个输出端口，选择器，分组控制器和存储器。选择器将输入到输入端口的数据包输出输出到其中一个输出端口。分组控制器控制选择器。内存存储数据。存储器节点在输入端口和输出端口相互连接。存储器节点具有由其物理位置确定的地址。当接收到没有寻址到具有分组控制器的存储器节点的分组时，分组控制器基于包括分组的目的地地址的信息和具有分组控制器的存储器节点的地址来切换输出分组的输出端口。

9. 发明申请

US20120077341A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20120077341A1
公开(公告)日：2012-03-29
申请号：US13081629
申请日：2011-04-07
申请人： Yoshifumi Nishi , Atsuhiro Kinoshita , Hirotaka Nishino , Masamichi Suzuki
发明人： Yoshifumi Nishi , Atsuhiro Kinoshita , Hirotaka Nishino , Masamichi Suzuki
IPC分类号： H01L21/283
CPC分类号： H01L21/28518 , H01L29/1608 , H01L29/41708 , H01L29/456 , H01L29/6606 , H01L29/66068 , H01L29/6609 , H01L29/66272 , H01L29/665 , H01L29/6659 , H01L29/66712 , H01L29/732 , H01L29/7833 , H01L29/861
摘要： In a semiconductor device manufacturing method according to an exemplary embodiment, a sulfur-containing film containing sulfur is deposited on an n-type semiconductor, a first metal film containing a first metal is deposited on the sulfur-containing film, a heat treatment is performed to form a metal semiconductor compound film by reacting the n-type semiconductor and the sulfur-containing film, and to introduce sulfur to an interface between the n-type semiconductor and the metal semiconductor compound film being formed.
摘要翻译：在根据示例性实施例的半导体器件制造方法中，在n型半导体上沉积含硫的含硫膜，在含硫膜上沉积含有第一金属的第一金属膜，进行热处理通过使n型半导体和含硫膜反应形成金属半导体化合物膜，并将硫引入到正在形成的n型半导体和金属半导体化合物膜之间的界面上。

10. 发明申请

US20080315183A1 SEMICONDUCTOR DEVICE WITH CARBON NANOTUBE CHANNEL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：具有碳纳米管通道的半导体器件及其制造方法
公开(公告)号：US20080315183A1
公开(公告)日：2008-12-25
申请号：US12052229
申请日：2008-03-20
申请人： Atsuhiro KINOSHITA , Yoshifumi Nishi , Ken Uchida , Junji Koga
发明人： Atsuhiro KINOSHITA , Yoshifumi Nishi , Ken Uchida , Junji Koga
IPC分类号： H01L29/12 , H01L21/336
CPC分类号： H01L51/105 , B82Y10/00 , H01L51/0048 , H01L51/0512 , H01L51/0541 , H01L51/0545
摘要： A high-performance semiconductor device having a channel region structured from a carbon nanotube (CNT) for reducing or minimizing a drain leakage current is provided. This semiconductor device includes, in addition to the CNT-formed channel region, a gate electrode formed to overlie the channel region with a gate insulation film sandwiched therebetween, and a pair of source and drain regions interposing the channel region therebetween. The source and drain regions have portions in contact with the channel region, which portions are made of a specific semiconductor material that is wider in energy band gap than the channel region.
摘要翻译：提供了一种具有由碳纳米管（CNT）构成的沟道区，用于降低或最小化漏极漏电流的高性能半导体器件。除了CNT形成的沟道区域之外，该半导体器件还包括形成为覆盖沟道区域的栅电极，其间夹有栅极绝缘膜，并且在其间插入沟道区域的一对源极和漏极区域。源极区和漏极区具有与沟道区接触的部分，这些部分由能量带隙比通道区宽的特定半导体材料制成。

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