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1. 发明申请

US20100044577A1 MICROCHANNEL PLATE DEVICES WITH TUNABLE RESISTIVE FILMS 有权
标题翻译：具有可调电阻膜的微通道板器件
公开(公告)号：US20100044577A1
公开(公告)日：2010-02-25
申请号：US12392064
申请日：2009-02-24
申请人： Neal T. Sullivan , Anton Tremsin , Phiippe De Rouffignac , David Beaulieu , Kourosh Saadatmand , Steve Bachman , Ken Stenton
发明人： Neal T. Sullivan , Anton Tremsin , Phiippe De Rouffignac , David Beaulieu , Kourosh Saadatmand , Steve Bachman , Ken Stenton
IPC分类号： G01T3/00
CPC分类号： H01J43/246 , G01T3/08
摘要： A microchannel plate for detecting neutrons includes a hydrogen-rich polymer substrate that defines a plurality of channels extending from a top surface of the substrate to a bottom surface of the substrate, where neutrons interact with the plurality of channels to generate at least one secondary electron. A top electrode is positioned on the top surface of the substrate and a bottom electrode is positioned on the bottom surface of the substrate. A resistive layer is formed over an outer surface of the plurality of channels that provides ohmic conduction with a resistivity that is substantially constant. An emissive layer is formed over the resistive layer. Neutron interaction products interact with the plurality of channels defined by the substrate and the emissive films to generate secondary electrons that cascade within the plurality of channels to provide an amplified signal related to the detection of neutrons.
摘要翻译：用于检测中子的微通道板包括富氢聚合物基底，其限定从基底的顶表面延伸到基底的底表面的多个通道，其中中子与多个通道相互作用以产生至少一个二次电子。顶部电极位于衬底的顶表面上，底部电极位于衬底的底表面上。电阻层形成在多个通道的外表面上，其提供基本恒定的电阻率的欧姆导电。在电阻层上形成发光层。中子相互作用产物与由衬底和发射膜限定的多个通道相互作用以产生在多个通道内级联的二次电子，以提供与中子检测有关的放大信号。

2. 发明申请

US20120273689A1 Microchannel Plate Devices With Tunable Resistive Films 审中-公开
标题翻译：具有可调电阻膜的微通道板装置
公开(公告)号：US20120273689A1
公开(公告)日：2012-11-01
申请号：US13543804
申请日：2012-07-07
申请人： Neal T. Sullivan , Anton Tremsin , Philippe de Rouffignac , David Beaulieu , Kourosh Saadatmand , Steve Bachman , Ken Stenton
发明人： Neal T. Sullivan , Anton Tremsin , Philippe de Rouffignac , David Beaulieu , Kourosh Saadatmand , Steve Bachman , Ken Stenton
IPC分类号： G01T3/00
CPC分类号： H01J43/246 , G01T3/08
摘要： A microchannel plate for detecting neutrons includes a hydrogen-rich polymer substrate that defines a plurality of channels extending from a top surface of the substrate to a bottom surface of the substrate, where neutrons interact with the plurality of channels to generate at least one secondary electron. A top electrode is positioned on the top surface of the substrate and a bottom electrode is positioned on the bottom surface of the substrate. A resistive layer is formed over an outer surface of the plurality of channels that provides ohmic conduction with a resistivity that is substantially constant. An emissive layer is formed over the resistive layer. Neutron interaction products interact with the plurality of channels defined by the substrate and the emissive films to generate secondary electrons that cascade within the plurality of channels to provide an amplified signal related to the detection of neutrons.
摘要翻译：用于检测中子的微通道板包括富氢聚合物基底，其限定从基底的顶表面延伸到基底的底表面的多个通道，其中中子与多个通道相互作用以产生至少一个二次电子。顶部电极位于衬底的顶表面上，底部电极位于衬底的底表面上。电阻层形成在多个通道的外表面上，其提供基本恒定的电阻率的欧姆导电。在电阻层上形成发光层。中子相互作用产物与由衬底和发射膜限定的多个通道相互作用以产生在多个通道内级联的二次电子，以提供与中子检测有关的放大信号。

3. 发明授权

US08237129B2 Microchannel plate devices with tunable resistive films 有权
标题翻译：具有可调电阻膜的微通道板器件
公开(公告)号：US08237129B2
公开(公告)日：2012-08-07
申请号：US12392064
申请日：2009-02-24
申请人： Neal T. Sullivan , Anton Tremsin , Philippe de Rouffignac , David Beaulieu , Kourosh Saadatmand , Steve Bachman , Ken Stenton , Dmitry Gorelikov
发明人： Neal T. Sullivan , Anton Tremsin , Philippe de Rouffignac , David Beaulieu , Kourosh Saadatmand , Steve Bachman , Ken Stenton , Dmitry Gorelikov
IPC分类号： G01T3/00
CPC分类号： H01J43/246 , G01T3/08
摘要： A microchannel plate for detecting neutrons includes a hydrogen-rich polymer substrate that defines a plurality of channels extending from a top surface of the substrate to a bottom surface of the substrate, where neutrons interact with the plurality of channels to generate at least one secondary electron. A top electrode is positioned on the top surface of the substrate and a bottom electrode is positioned on the bottom surface of the substrate. A resistive layer is formed over an outer surface of the plurality of channels that provides ohmic conduction with a resistivity that is substantially constant. An emissive layer is formed over the resistive layer. Neutron interaction products interact with the plurality of channels defined by the substrate and the emissive films to generate secondary electrons that cascade within the plurality of channels to provide an amplified signal related to the detection of neutrons.
摘要翻译：用于检测中子的微通道板包括富氢聚合物基底，其限定从基底的顶表面延伸到基底的底表面的多个通道，其中中子与多个通道相互作用以产生至少一个二次电子。顶部电极位于衬底的顶表面上，底部电极位于衬底的底表面上。电阻层形成在多个通道的外表面上，其提供基本恒定的电阻率的欧姆导电。在电阻层上形成发光层。中子相互作用产物与由衬底和发射膜限定的多个通道相互作用以产生在多个通道内级联的二次电子，以提供与中子检测有关的放大信号。

4. 发明申请

US20070178678A1 Methods of implanting ions and ion sources used for same 审中-公开
标题翻译：植入离子和离子源的方法
公开(公告)号：US20070178678A1
公开(公告)日：2007-08-02
申请号：US11342183
申请日：2006-01-28
申请人： Christopher Hatem , Jonathan England , Larry Sneddon , Russell Low , Anthony Renau , Alexander Perel , Kourosh Saadatmand
发明人： Christopher Hatem , Jonathan England , Larry Sneddon , Russell Low , Anthony Renau , Alexander Perel , Kourosh Saadatmand
IPC分类号： H01L21/26
CPC分类号： H01J37/08 , C23C14/48 , H01J27/02 , H01J37/3171
摘要： Methods of ion implantation and ion sources used for the same are provided. The methods involve generating ions from a source feed gas that comprises multiple elements. For example, the source feed gas may comprise boron and at least two other elements (e.g., XaBbYc). The use of such source feed gases can lead to a number of advantages over certain conventional processes including enabling use of higher implant energies and beam currents when forming implanted regions having ultra-shallow junction depths. Also, in certain embodiments, the composition of the source feed gas may be selected to be thermally stable at relatively high temperatures (e.g., greater than 350° C.) which allows use of such gases in many conventional ion sources (e.g., indirectly heated cathode (IHC), Bernas) which generate such temperatures during use.
摘要翻译：提供了用于其的离子注入和离子源的方法。该方法涉及从包含多个元素的源馈送气体产生离子。例如，源原料气体可以包含硼和至少两个其它元素（例如，X a，B B，B和C）。使用这种源进料气体可以产生比某些常规方法多的优点，包括当形成具有超浅结深度的注入区域时能够使用更高的注入能量和束流。此外，在某些实施方案中，源进料气体的组成可以选择为在相对较高的温度（例如，大于350℃）下是热稳定的，其允许在许多常规离子源中使用这种气体（例如，间接加热阴极（IHC），伯纳斯）在使用过程中产生这种温度。

5. 发明授权

US06653803B1 Integrated resonator and amplifier system 有权
标题翻译：集成谐振器和放大器系统
公开(公告)号：US06653803B1
公开(公告)日：2003-11-25
申请号：US09583157
申请日：2000-05-30
申请人： William F. DiVergilio , Kourosh Saadatmand , Ernst F. Scherer
发明人： William F. DiVergilio , Kourosh Saadatmand , Ernst F. Scherer
IPC分类号： H05H900
CPC分类号： H05H7/02
摘要： An integrated RF amplifier and resonator is provided for use with an ion accelerator. The amplifier includes an output substantially directly coupled with a resonator coil. The amplifier output may be coupled capacitively or inductively. In addition, an apparatus is provided for accelerating ions in an ion implanter. The apparatus comprises an amplifier with an RF output, a tank circuit with a coil substantially directly coupled to the RF output of the amplifier, and an electrode connected to the coil for accelerating ions. Also provided is a method for coupling an RF amplifier with a resonator in an ion accelerator. The method comprises connecting the RF output of the amplifier to a coupler, and locating the coupler proximate the coil, thereby substantially directly coupling the RF output of the amplifier with the resonator coil.
摘要翻译：提供集成的RF放大器和谐振器用于离子加速器。放大器包括基本上直接与谐振器线圈耦合的输出。放大器输出可以电容或电感耦合。此外，提供了用于加速离子注入机中的离子的装置。该装置包括具有RF输出的放大器，具有基本上直接耦合到放大器的RF输出的线圈的振荡电路，以及连接到用于加速离子的线圈的电极。还提供了一种在离子加速器中将RF放大器与谐振器耦合的方法。该方法包括将放大器的RF输出连接到耦合器，并将耦合器定位在线圈附近，从而基本上将放大器的RF输出与谐振器线圈直接耦合。

6. 发明授权

US06653643B2 Method and apparatus for improved ion acceleration in an ion implantation system 有权
公开(公告)号：US06653643B2
公开(公告)日：2003-11-25
申请号：US10036144
申请日：2001-12-26
申请人： Kourosh Saadatmand , William F. DiVergilio
发明人： Kourosh Saadatmand , William F. DiVergilio
IPC分类号： G21K500
CPC分类号： H05H9/00
摘要： A method and apparatus are disclosed for accelerating ions in an ion implantation system. An ion accelerator is provided which comprises a plurality of energizable electrodes energized by a variable frequency power source, in order to accelerate ions from an ion source. The variable frequency power source allows the ion accelerator to be adapted to accelerate a wide range of ion species to desired energy levels for implantation onto a workpiece, while reducing the cost and size of an ion implantation accelerator.

7. 发明授权

US07723707B2 Techniques for plasma injection 有权
标题翻译：等离子体注入技术
公开(公告)号：US07723707B2
公开(公告)日：2010-05-25
申请号：US11781700
申请日：2007-07-23
申请人： Victor M. Benveniste , Gordon Angel , Bon-Woong Koo , Kourosh Saadatmand
发明人： Victor M. Benveniste , Gordon Angel , Bon-Woong Koo , Kourosh Saadatmand
IPC分类号： G21G1/00
CPC分类号： H01J37/3171 , H01J37/026 , H01J2237/0041 , H01J2237/055
摘要： Techniques for plasma injection for space charge neutralization of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a plasma injection system for space charge neutralization of an ion beam. The plasma injection system may comprise a first array of magnets and a second array of magnets positioned along at least a portion of an ion beam path, the first array being on a first side of the ion beam path and the second array being on a second side of the ion beam path, the first side opposing the second side. At least two adjacent magnets in the first array of magnets may have opposite polarity. The plasma injection system may also comprise a plasma source configured to generate a plasma in a region associated with a portion of the ion beam path by colliding at least some electrons with a gas.
摘要翻译：公开了用于离子束空间电荷中和的等离子体注入技术。在一个特定的示例性实施例中，这些技术可以被实现为用于离子束的空间电荷中和的等离子体注入系统。等离子体注入系统可以包括第一磁体阵列和沿着离子束路径的至少一部分定位的第二磁体阵列，第一阵列位于离子束路径的第一侧上，第二阵列位于第二阵列的第二阵列上离子束路径的一侧，第一侧与第二侧相对。第一磁体阵列中的至少两个相邻的磁体可以具有相反的极性。等离子体注入系统还可以包括等离子体源，其被配置为通过与至少一些电子与气体碰撞而在与一部分离子束路径相关联的区域中产生等离子体。

8. 发明授权

US06583429B2 Method and apparatus for improved ion bunching in an ion implantation system 有权
公开(公告)号：US06583429B2
公开(公告)日：2003-06-24
申请号：US10224778
申请日：2002-08-21
申请人： Kourosh Saadatmand , William F. DiVergilio
发明人： Kourosh Saadatmand , William F. DiVergilio
IPC分类号： B01D5944
CPC分类号： H05H7/18 , H01J37/3171 , H01J2237/04737
摘要： An ion buncher stage for a linear accelerator system is disclosed for bunching ions in an ion implantation system. The ion buncher stage may be employed upstream of one or more accelerating stages such that the loss of ions in the linear accelerator system is reduced. The invention further includes an asymmetrical double gap buncher stage, as well as a slit buncher stage for further improvement of ion implantation efficiency. Also disclosed are methods for accelerating ions in an ion implanter linear accelerator.

9. 发明授权

US07394079B2 Architecture for ribbon ion beam ion implanter system 有权
标题翻译：带状离子束离子注入机系统的结构
公开(公告)号：US07394079B2
公开(公告)日：2008-07-01
申请号：US11275772
申请日：2006-01-27
申请人： Kourosh Saadatmand , Peter L. Kellerman
发明人： Kourosh Saadatmand , Peter L. Kellerman
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/3007 , H01J2237/0492
摘要： An architecture for a ribbon ion beam ion implanter system is disclosed. In one embodiment, the architecture includes an acceleration/deceleration parallelizing lens system for receiving a fanned ribbon ion beam and for at least parallelizing (and perhaps also accelerate or decelerate) the fanned ribbon ion beam into a substantially parallel ribbon ion beam, and an energy filter system downstream from the acceleration/deceleration parallelizing lens system and prior to a work piece to be implanted by the substantially parallel ribbon ion beam. The acceleration/deceleration parallelizing lens system includes lenses for at least parallelizing (and perhaps also accelerate or decelerate) the fanned ribbon ion beam and acceleration/deceleration lenses for accelerating or decelerating the substantially parallel ribbon ion beam. The parallelizing lens allows delivery of a high current ribbon ion beam to the work piece with energy that can extend down to as low as approximately 200 eV. The energy filter system provides a substantially parallel ribbon ion beam that is substantially free of energy contamination.
摘要翻译：公开了一种带状离子束离子注入机系统的结构。在一个实施例中，该架构包括用于接收扇形带状离子束的加速/减速并行化透镜系统，并且至少将扇形带状离子束并行（并且也可能加速或减速）到基本上平行的带状离子束中，并且能量过滤系统在加速/减速并行化透镜系统的下游，以及待通过基本上平行的带状离子束植入的工件之前。加速/减速并行化透镜系统包括用于至少并行（也可能加速或减速）扇形带状离子束和用于加速或减速基本上平行的带状离子束的加速/减速透镜的透镜。并行化透镜允许将高电流带状离子束以能够向下延伸至低至约200eV的能量传递到工件。能量过滤系统提供基本上没有能量污染的基本平行的带状离子束。

10. 发明授权

US06635890B2 Slit double gap buncher and method for improved ion bunching in an ion implantation system 有权
标题翻译：狭缝双缝隙聚束器和离子注入系统中改进离子聚束的方法
公开(公告)号：US06635890B2
公开(公告)日：2003-10-21
申请号：US10224779
申请日：2002-08-21
申请人： Kourosh Saadatmand , William F. DiVergilio
发明人： Kourosh Saadatmand , William F. DiVergilio
IPC分类号： H01J37317
CPC分类号： H05H7/18 , H01J37/3171 , H01J2237/04737 , H01J2237/04924
摘要： An ion buncher stage for a linear accelerator system is disclosed for bunching ions in an ion implantation system. The ion buncher stage may be employed upstream of one or more accelerating stages such that the loss of ions in the linear accelerator system is reduced. The invention further includes an asymmetrical double gap buncher stage, as well as a slit buncher stage for further improvement of ion implantation efficiency. Also disclosed are methods for accelerating ions in an ion implanter linear accelerator.
摘要翻译：公开了用于在离子注入系统中聚束离子的用于线性加速器系统的离子聚束器级。可以在一个或多个加速阶段的上游使用离子聚束器阶段，使得线性加速器系统中的离子的损失减少。本发明还包括不对称双间隙聚束器阶段，以及用于进一步提高离子注入效率的狭缝分束器台。还公开了用于在离子注入机线性加速器中加速离子的方法。

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