专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08569808B1 Temperature stabilitized MEMS 有权
标题翻译：温度稳定的MEMS
公开(公告)号：US08569808B1
公开(公告)日：2013-10-29
申请号：US13441134
申请日：2012-04-06
申请人： Tung-Tsun Chen , Chia-Hua Chu , Chung-Hsien Lin , Jui-Cheng Huang
发明人： Tung-Tsun Chen , Chia-Hua Chu , Chung-Hsien Lin , Jui-Cheng Huang
IPC分类号： H01L29/66
CPC分类号： H01L23/34 , B81B7/0096 , B81B2201/0278 , B81C1/0023 , H01L23/345 , H01L27/0629 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device with temperature control system. Embodiments of the device may include a MEMS chip including a first heater with a dedicated first temperature control loop and a CMOS chip including a second heater with a dedicated second temperature control loop. Each control loop may have a dedicated temperature sensor for controlling the thermal output of each heater. The first heater and sensor are disposed proximate to a MEMS device in the MEMS chip for direct heating thereof. The temperature of the MEMS chip and CMOS chip are independently controllable of each other via the temperature control loops.
摘要翻译：具有温度控制系统的半导体器件。该装置的实施例可以包括包括具有专用第一温度控制回路的第一加热器和包括具有专用第二温度控制回路的第二加热器的CMOS芯片的MEMS芯片。每个控制回路可以具有用于控制每个加热器的热输出的专用温度传感器。第一加热器和传感器靠近MEMS芯片中的MEMS器件设置，用于直接加热MEMS芯片。 MEMS芯片和CMOS芯片的温度可以通过温度控制回路彼此独立控制。

2. 发明授权

US08887573B2 MEMS vacuum level monitor in sealed package 有权
标题翻译： MEMS真空度监测仪在密封包装中
公开(公告)号：US08887573B2
公开(公告)日：2014-11-18
申请号：US13401134
申请日：2012-02-21
申请人： Tung-Tsun Chen , Jui-Cheng Huang , Chung-Hsien Lin
发明人： Tung-Tsun Chen , Jui-Cheng Huang , Chung-Hsien Lin
IPC分类号： G01L11/00 , G01L13/02
CPC分类号： G01L21/22 , B81C99/0045 , H01L27/0688
摘要： A vacuum sensor for sensing vacuum in a sealed enclosure is provided. The sealed enclosure includes active MEMS devices desired to be maintained in vacuum conditions. The vacuum sensor includes a motion beam anchored to an internal surface in the sealed enclosure. A driving electrode is disposed beneath the motion beam and a bias is supplied to cause the motion beam to deflect through electromotive force. A sensing electrode is also provided and detects capacitance between the sensing electrode disposed on the internal surface, and the motion beam. Capacitance changes as the gap between the motion beam and the sensing electrode changes. The amount of deflection is determined by the vacuum level in the sealed enclosure. The vacuum level in the sealed enclosure is thereby sensed by the sensing electrode.
摘要翻译：提供了用于感测密封外壳中的真空的真空传感器。密封的外壳包括希望保持在真空条件下的有源MEMS器件。真空传感器包括锚定在密封外壳中的内表面的运动梁。驱动电极设置在运动光束下方，并且提供偏压以使运动光束通过电动势偏转。还提供感测电极并且检测设置在内表面上的感测电极与运动光束之间的电容。电容随着运动光束与感应电极之间的间隙而变化。偏转量由密封外壳中的真空度决定。因此，密封外壳中的真空度由感测电极感测。

3. 发明授权

US08987059B2 MEMS devices and methods of forming same 有权
标题翻译： MEMS器件及其形成方法
公开(公告)号：US08987059B2
公开(公告)日：2015-03-24
申请号：US13571264
申请日：2012-08-09
申请人： Kai-Chih Liang , Chia-Hua Chu , Te-Hao Lee , Jiou-Kang Lee , Chung-Hsien Lin
发明人： Kai-Chih Liang , Chia-Hua Chu , Te-Hao Lee , Jiou-Kang Lee , Chung-Hsien Lin
IPC分类号： H01L21/50 , B81C1/00
CPC分类号： B81C1/00515 , B81B7/0006 , B81B7/0077 , B81B2201/0235 , B81B2203/0315 , B81B2207/07 , B81B2207/095 , B81B2207/096 , B81C1/00293 , B81C1/00301 , B81C2201/0132 , B81C2201/014 , B81C2203/0109 , B81C2203/0118 , B81C2203/0145 , B81C2203/035 , H01L2224/11
摘要： A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.
摘要翻译：微机电系统（MEMS）装置可以包括在第一基板上的MEMS结构。 MEMS结构包括可移动元件。在第一衬底上沉积第一导电材料并蚀刻第二衬底中的沟槽。用第二导电材料填充沟槽并在第二导电材料和第二衬底上沉积第三导电材料。将第一基板和第二基板接合并使第二基板的背面变薄，从而在沟槽中露出第二导电材料。

4. 发明申请

US20140287548A1 MEMS Device with Release Aperture 有权
标题翻译：具有释放孔径的MEMS器件
公开(公告)号：US20140287548A1
公开(公告)日：2014-09-25
申请号：US14225733
申请日：2014-03-26
申请人： Chung-Hsien Lin , Chia-Hua Chu , Chun-Wen Cheng
发明人： Chung-Hsien Lin , Chia-Hua Chu , Chun-Wen Cheng
IPC分类号： B81C1/00
CPC分类号： B81B7/0058 , B81C1/00333 , B81C1/0038 , B81C2203/0136 , B81C2203/0145 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a method of fabricating a micro-electro-mechanical systems (MEMS) device. In an embodiment, a method includes providing a substrate including a first sacrificial layer, forming a micro-electro-mechanical systems (MEMS) structure above the first sacrificial layer, and forming a release aperture at substantially a same level above the first sacrificial layer as the MEMS structure. The method further includes forming a second sacrificial layer above the MEMS structure and within the release aperture, and forming a first cap over the second sacrificial layer and the MEMS structure, wherein a leg of the first cap is disposed between the MEMS structure and the release aperture. The method further includes removing the first sacrificial layer, removing the second sacrificial layer through the release aperture, and plugging the release aperture. A MEMS device formed by such a method is also provided.
摘要翻译：本公开提供了一种制造微机电系统（MEMS）装置的方法。在一个实施例中，一种方法包括提供包括第一牺牲层的衬底，在第一牺牲层之上形成微电子机械系统（MEMS）结构，以及在第一牺牲层之上的基本上相同的水平面上形成释放孔， MEMS结构。该方法还包括在MEMS结构之上和释放孔内形成第二牺牲层，以及在第二牺牲层和MEMS结构之上形成第一帽，其中第一帽的腿设置在MEMS结构和释放之间光圈。该方法还包括去除第一牺牲层，通过释放孔去除第二牺牲层并堵塞释放孔。还提供了通过这种方法形成的MEMS器件。

5. 发明授权

US08648468B2 Hermetic wafer level packaging 有权
标题翻译：密封晶圆级包装
公开(公告)号：US08648468B2
公开(公告)日：2014-02-11
申请号：US12846504
申请日：2010-07-29
申请人： Richard Chu , Martin Liu , Chia-Hua Chu , Yuan-Chih Hsieh , Chung-Hsien Lin , Lan-Lin Chao , Chun-Wen Cheng , Mingo Liu
发明人： Richard Chu , Martin Liu , Chia-Hua Chu , Yuan-Chih Hsieh , Chung-Hsien Lin , Lan-Lin Chao , Chun-Wen Cheng , Mingo Liu
IPC分类号： H01L23/48
CPC分类号： H01L24/94 , B81B2207/015 , B81C1/00269 , B81C2203/0109 , B81C2203/0771 , H01L23/481 , H01L25/50 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/1306 , H01L2924/14 , H01L2924/1461 , H01L2924/00
摘要： Provided is a wafer level packaging. The packaging includes a first semiconductor wafer having a transistor device and a first bonding layer that includes a first material. The packaging includes a second semiconductor wafer having a second bonding layer that includes a second material different from the first material, one of the first and second materials being aluminum -based, and the other thereof being titanium-based. Wherein a portion of the second wafer is diffusively bonded to the first wafer through the first and second bonding layers.
摘要翻译：提供晶圆级封装。该封装包括具有晶体管器件的第一半导体晶片和包括第一材料的第一结合层。所述封装包括具有第二接合层的第二半导体晶片，所述第二接合层包括不同于所述第一材料的第二材料，所述第一和第二材料中的一个为铝基，另一个为钛基。其中第二晶片的一部分通过第一和第二接合层扩散地结合到第一晶片。

6. 发明申请

US20130168852A1 MEMS Devices and Methods of Forming Same 有权
公开(公告)号：US20130168852A1
公开(公告)日：2013-07-04
申请号：US13571264
申请日：2012-08-09
申请人： Kai-Chih Liang , Chia-Hua Chu , Te-Hao Lee , Jiou-Kang Lee , Chung-Hsien Lin
发明人： Kai-Chih Liang , Chia-Hua Chu , Te-Hao Lee , Jiou-Kang Lee , Chung-Hsien Lin
IPC分类号： H01L23/498 , H01L21/50
CPC分类号： B81C1/00515 , B81B7/0006 , B81B7/0077 , B81B2201/0235 , B81B2203/0315 , B81B2207/07 , B81B2207/095 , B81B2207/096 , B81C1/00293 , B81C1/00301 , B81C2201/0132 , B81C2201/014 , B81C2203/0109 , B81C2203/0118 , B81C2203/0145 , B81C2203/035 , H01L2224/11
摘要： A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.

7. 发明申请

US20130043547A1 MEMS DEVICE HAVING CHIP SCALE PACKAGING 有权
标题翻译：具有芯片尺寸包装的MEMS器件
公开(公告)号：US20130043547A1
公开(公告)日：2013-02-21
申请号：US13213863
申请日：2011-08-19
申请人： Chia-Hua Chu , Chung-Hsien Lin
发明人： Chia-Hua Chu , Chung-Hsien Lin
IPC分类号： H01L27/20 , H01L21/98
CPC分类号： B81C1/00238 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , H01L23/10 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/94 , H01L2224/02166 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/0362 , H01L2224/0401 , H01L2224/04042 , H01L2224/05558 , H01L2224/0557 , H01L2224/05571 , H01L2224/05572 , H01L2224/056 , H01L2224/05609 , H01L2224/05611 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/06181 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/11622 , H01L2224/131 , H01L2224/13109 , H01L2224/13111 , H01L2224/13124 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13166 , H01L2224/16145 , H01L2224/73257 , H01L2224/81011 , H01L2224/81013 , H01L2224/81054 , H01L2224/81065 , H01L2224/81203 , H01L2224/81805 , H01L2224/8182 , H01L2224/94 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00014 , H01L2924/01322 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/1437 , H01L2924/1461 , H01L2924/00 , H01L2224/81 , H01L2924/014 , H01L2224/05552
摘要： A method and device having chip scale MEMS packaging is described. A first substrate includes a MEMS device and a second substrate includes an integrated circuit. The frontside of the first substrate is bonded to the backside of the second substrate. Thus, the second substrate provides a cavity to encase, protect or operate the MEMS device within. The bond may provide an electrical connection between the first and second substrate. In an embodiment, a through silicon via is used to carry the signals from the first substrate to an I/O connection on the frontside of the second substrate.
摘要翻译：描述了具有芯片级MEMS封装的方法和装置。第一衬底包括MEMS器件，第二衬底包括集成电路。第一衬底的前侧结合到第二衬底的背面。因此，第二衬底提供了一个空腔来封装，保护或操作其中的MEMS器件。该键可以在第一和第二衬底之间提供电连接。在一个实施例中，穿通硅通孔用于将信号从第一衬底传送到第二衬底的前侧上的I / O连接。

8. 发明申请

US20120313235A1 Semiconductor Devices With Moving Members and Methods for Making the Same 有权
标题翻译：具有移动成员的半导体器件及其制造方法
公开(公告)号：US20120313235A1
公开(公告)日：2012-12-13
申请号：US13157994
申请日：2011-06-10
申请人： Chia-Hua Chu , Kuei-Sung Chang , Chung-Hsien Lin
发明人： Chia-Hua Chu , Kuei-Sung Chang , Chung-Hsien Lin
IPC分类号： H01L23/522 , H01L21/50
CPC分类号： B81B3/0005 , B81B3/001 , B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/07 , B81B2207/092 , B81B2207/095 , B81B2207/096 , B81C1/00269 , B81C1/00579 , B81C2201/0111 , B81C2201/014 , B81C2201/0176 , B81C2203/0118 , B81C2203/019
摘要： The present disclosure provides an embodiment of a micro-electro-mechanical system (MEMS) structure, the MEMS structure comprising a MEMS substrate; a first and second conductive plugs of a semiconductor material disposed on the MEMS substrate, wherein the first conductive plug is configured for electrical interconnection and the second conductive plug is configured as an anti-stiction bump; a MEMS device configured on the MEMS substrate and electrically coupled with the first conductive plug; and a cap substrate bonded to the MEMS substrate such that the MEMS device is enclosed therebetween.
摘要翻译：本公开提供了微机电系统（MEMS）结构的实施例，所述MEMS结构包括MEMS基板; 设置在所述MEMS衬底上的半导体材料的第一和第二导电插塞，其中所述第一导电插头被配置用于电互连，所述第二导电插头被配置为抗静电凸块; 配置在所述MEMS基板上并与所述第一导电插塞电耦合的MEMS器件; 以及盖子衬底，其结合到MEMS衬底上，使得MEMS器件封装在其间。

9. 发明申请

US20120074590A1 MULTIPLE BONDING IN WAFER LEVEL PACKAGING 有权
标题翻译：多级捆绑在水平包装中
公开(公告)号：US20120074590A1
公开(公告)日：2012-03-29
申请号：US12892003
申请日：2010-09-28
申请人： Chung-Hsien Lin , Chia-Hua Chu , Li-Cheng Chu , Yuan-Chih Hsieh , Chun-Wen Cheng
发明人： Chung-Hsien Lin , Chia-Hua Chu , Li-Cheng Chu , Yuan-Chih Hsieh , Chun-Wen Cheng
IPC分类号： H01L23/488 , H01L21/768
CPC分类号： B81B7/0032 , B81B2207/092 , B81C1/00269 , B81C1/00357 , B81C2203/0109 , B81C2203/0792 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a method for fabricating a MEMS device including multiple bonding of substrates. In an embodiment, a method includes providing a micro-electro-mechanical systems (MEMS) substrate including a first bonding layer, providing a semiconductor substrate including a second bonding layer, and providing a cap including a third bonding layer. The method further includes bonding the MEMS substrate to the semiconductor substrate at the first and second bonding layers, and bonding the cap to the semiconductor substrate at the second and third bonding layers to hermetically seal the MEMS substrate between the cap and the semiconductor substrate. A MEMS device fabricated by the above method is also provided.
摘要翻译：本公开提供了一种用于制造包括多个基板结合的MEMS装置的方法。在一个实施例中，一种方法包括提供包括第一结合层的微电子机械系统（MEMS）衬底，提供包括第二接合层的半导体衬底，以及提供包括第三接合层的帽。该方法还包括在第一和第二接合层处将MEMS衬底接合到半导体衬底，并且在第二和第三接合层处将盖接合到半导体衬底上，以密封MEMS衬底在盖和半导体衬底之间。还提供了通过上述方法制造的MEMS器件。

10. 发明申请

US20120043626A1 MICROSTRUCTURE DEVICE WITH AN IMPROVED ANCHOR 有权
标题翻译：具有改进锚杆的微结构装置
公开(公告)号：US20120043626A1
公开(公告)日：2012-02-23
申请号：US12858202
申请日：2010-08-17
申请人： Chung-Hsien Lin , Chun-Wen Cheng , Chia-Hua Chu , Yi Heng Tsai
发明人： Chung-Hsien Lin , Chun-Wen Cheng , Chia-Hua Chu , Yi Heng Tsai
IPC分类号： H01L29/84 , H01L21/50
CPC分类号： H01L29/84 , B81B2203/0109 , B81B2203/0118 , B81B2203/0307 , B81C1/00571
摘要： The present disclosure provides a system of fabricating a microstructure device with an improved anchor. A method of fabricating a microstructure device with an improved anchor includes providing a substrate and forming an oxide layer on the substrate. Then, a cavity is etched in the oxide layer, such that the cavity includes a sidewall in the oxide layer. A microstructure device layer is then bonded to the oxide layer over the cavity. Forming a microstructure device, a trench is etched in the device layer to define an outer boundary of the microstructure device. In an embodiment, the outer boundary is substantially outside of the sidewall of the cavity. Then, the sidewall of the cavity is etched away through the trench in the device layer, to thereby suspend the microstructure device over the cavity.
摘要翻译：本公开提供了一种制造具有改进的锚的微结构装置的系统。利用改进的锚固件制造微结构器件的方法包括提供衬底并在衬底上形成氧化物层。然后，在氧化物层中蚀刻空腔，使得空腔包括在氧化物层中的侧壁。然后将微结构器件层与空腔上的氧化物层结合。形成微结构器件，在器件层中蚀刻沟槽以限定微结构器件的外边界。在一个实施例中，外部边界基本上在空腔的侧壁的外侧。然后，通过器件层中的沟槽蚀刻空腔的侧壁，从而将微结构器件悬浮在空腔上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式