专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08569808B1 Temperature stabilitized MEMS 有权
标题翻译：温度稳定的MEMS
公开(公告)号：US08569808B1
公开(公告)日：2013-10-29
申请号：US13441134
申请日：2012-04-06
申请人： Tung-Tsun Chen , Chia-Hua Chu , Chung-Hsien Lin , Jui-Cheng Huang
发明人： Tung-Tsun Chen , Chia-Hua Chu , Chung-Hsien Lin , Jui-Cheng Huang
IPC分类号： H01L29/66
CPC分类号： H01L23/34 , B81B7/0096 , B81B2201/0278 , B81C1/0023 , H01L23/345 , H01L27/0629 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device with temperature control system. Embodiments of the device may include a MEMS chip including a first heater with a dedicated first temperature control loop and a CMOS chip including a second heater with a dedicated second temperature control loop. Each control loop may have a dedicated temperature sensor for controlling the thermal output of each heater. The first heater and sensor are disposed proximate to a MEMS device in the MEMS chip for direct heating thereof. The temperature of the MEMS chip and CMOS chip are independently controllable of each other via the temperature control loops.
摘要翻译：具有温度控制系统的半导体器件。该装置的实施例可以包括包括具有专用第一温度控制回路的第一加热器和包括具有专用第二温度控制回路的第二加热器的CMOS芯片的MEMS芯片。每个控制回路可以具有用于控制每个加热器的热输出的专用温度传感器。第一加热器和传感器靠近MEMS芯片中的MEMS器件设置，用于直接加热MEMS芯片。 MEMS芯片和CMOS芯片的温度可以通过温度控制回路彼此独立控制。

2. 发明授权

US08797127B2 MEMS switch with reduced dielectric charging effect 有权
标题翻译：具有降低介电充电效应的MEMS开关
公开(公告)号：US08797127B2
公开(公告)日：2014-08-05
申请号：US12951492
申请日：2010-11-22
申请人： Chia-Hua Chu , Chung-Hsien Lin , Chun-Wen Cheng
发明人： Chia-Hua Chu , Chung-Hsien Lin , Chun-Wen Cheng
IPC分类号： H01H51/22
CPC分类号： H01H11/00 , H01G5/18 , H01H49/00 , H01H59/0009 , H01H2001/0084 , H01P1/127 , Y10T29/49105
摘要： The present disclosure provides in one embodiment, a semiconductor device that includes a MEMS switch having a substrate, a first dielectric layer disposed above the substrate, and a bottom signal electrode, a bump, and a bottom actuation electrode disposed above the first dielectric layer. The MEMS switch further includes a second dielectric layer enclosing the bottom signal electrode, and a movable member including a top signal electrode disposed above the bottom signal electrode and a top actuation electrode disposed above the bottom actuation electrode and the bump, wherein the top actuation electrode is electrically coupled to the bump. A method of fabricating a MEMS switch is also disclosed.
摘要翻译：本公开在一个实施例中提供了一种半导体器件，其包括具有衬底的MEMS开关，设置在衬底上方的第一电介质层，以及设置在第一电介质层上方的底部信号电极，凸块和底部致动电极。 MEMS开关还包括封装底部信号电极的第二电介质层和包括设置在底部信号电极上方的顶部信号电极的可移动部件和设置在底部致动电极和凸起上方的顶部致动电极，其中顶部致动电极电连接到凸块。还公开了一种制造MEMS开关的方法。

3. 发明授权

US08729646B2 MEMS devices and methods for forming the same 有权
标题翻译： MEMS器件及其形成方法
公开(公告)号：US08729646B2
公开(公告)日：2014-05-20
申请号：US13571258
申请日：2012-08-09
申请人： Chia-Hua Chu , Chun-Wen Cheng , Te-Hao Lee , Chung-Hsien Lin
发明人： Chia-Hua Chu , Chun-Wen Cheng , Te-Hao Lee , Chung-Hsien Lin
IPC分类号： H01L29/84
CPC分类号： B81B3/0059 , B81B2201/0235 , B81B2201/0257 , B81B2203/0315 , B81B2207/012 , B81C2203/0118 , G01P15/0802 , G01P15/125 , H04R2201/003
摘要： A device includes a Micro-Electro-Mechanical System (MEMS) wafer having a MEMS device therein. The MEMS device includes a movable element, and first openings in the MEMS wafer. The movable element is disposed in the first openings. A carrier wafer is bonded to the MEMS wafer. The carrier wafer includes a second opening connected to the first openings, wherein the second opening includes an entry portion extending from a surface of the carrier wafer into the carrier wafer, and an inner portion wider than the entry portion, wherein the inner portion is deeper in the carrier wafer than the entry portion.
摘要翻译：一种器件包括其中具有MEMS器件的微机电系统（MEMS）晶片。 MEMS器件包括可移动元件和MEMS晶片中的第一开口。可移动元件设置在第一开口中。载体晶片结合到MEMS晶片。载体晶片包括连接到第一开口的第二开口，其中第二开口包括从载体晶片的表面延伸到载体晶片中的入口部分和比入口部分更宽的内部部分，其中内部部分更深在载体晶片中比入口部分。

4. 发明申请

US20140042562A1 MEMS Devices and Methods for Forming the Same 有权
标题翻译： MEMS器件及其形成方法
公开(公告)号：US20140042562A1
公开(公告)日：2014-02-13
申请号：US13571258
申请日：2012-08-09
申请人： Chia-Hua Chu , Chun-Wen Cheng , Te-Hao Lee , Chung-Hsien Lin
发明人： Chia-Hua Chu , Chun-Wen Cheng , Te-Hao Lee , Chung-Hsien Lin
IPC分类号： H01L21/306 , H01L29/84
CPC分类号： B81B3/0059 , B81B2201/0235 , B81B2201/0257 , B81B2203/0315 , B81B2207/012 , B81C2203/0118 , G01P15/0802 , G01P15/125 , H04R2201/003
摘要： A device includes a Micro-Electro-Mechanical System (MEMS) wafer having a MEMS device therein. The MEMS device includes a movable element, and first openings in the MEMS wafer. The movable element is disposed in the first openings. A carrier wafer is bonded to the MEMS wafer. The carrier wafer includes a second opening connected to the first openings, wherein the second opening includes an entry portion extending from a surface of the carrier wafer into the carrier wafer, and an inner portion wider than the entry portion, wherein the inner portion is deeper in the carrier wafer than the entry portion.
摘要翻译：一种器件包括其中具有MEMS器件的微机电系统（MEMS）晶片。 MEMS器件包括可移动元件和MEMS晶片中的第一开口。可移动元件设置在第一开口中。载体晶片结合到MEMS晶片。载体晶片包括连接到第一开口的第二开口，其中第二开口包括从载体晶片的表面延伸到载体晶片中的入口部分和比入口部分更宽的内部部分，其中内部部分更深在载体晶片中比入口部分。

5. 发明授权

US08410665B2 MEMS kinetic energy conversion 有权
标题翻译： MEMS动能转换
公开(公告)号：US08410665B2
公开(公告)日：2013-04-02
申请号：US12977304
申请日：2010-12-23
申请人： Tien-Kan Chung , Chung-Hsien Lin , Yao-Te Huang , Chia-Hua Chu , Chia-Ming Hung , Wen-Chuan Tai , Chang-Yi Yang
发明人： Tien-Kan Chung , Chung-Hsien Lin , Yao-Te Huang , Chia-Hua Chu , Chia-Ming Hung , Wen-Chuan Tai , Chang-Yi Yang
IPC分类号： H01L41/08
CPC分类号： H01L41/311 , B81B3/0021 , B81C1/00 , H01L41/113 , H01L41/1136 , H01L41/1138 , H01L41/22 , H01L41/312 , H02K35/04 , H02N2/186 , Y10T29/42 , Y10T29/49005 , Y10T29/49073 , Y10T29/49075 , Y10T29/49146
摘要： The present disclosure provides a micro device. The device has a micro-electro-mechanical systems (MEMS) movable structure, a plurality of metal loops over the MEMS movable structure, and a piezoelectric element over the MEMS movable structure. Frontside and backside capping wafers are bonded to the MEMS structure, with the frontside and backside capping wafers encapsulating the MEMS movable structure, the plurality of metal loops, and the piezoelectric element. The device further includes a magnet disposed on the frontside capping wafer over the plurality of metal loops.
摘要翻译：本公开提供了微型装置。该装置具有微电子机械系统（MEMS）可移动结构，MEMS可移动结构上的多个金属环以及MEMS可移动结构上方的压电元件。前侧和后侧封盖晶片被结合到MEMS结构，前侧和后侧封盖晶片封装MEMS可移动结构，多个金属环和压电元件。该装置还包括设置在多个金属环上的前侧封盖晶片上的磁体。

6. 发明申请

US20120161582A1 MEMS KINETIC ENERGY CONVERSION 有权
标题翻译： MEMS动力转换
公开(公告)号：US20120161582A1
公开(公告)日：2012-06-28
申请号：US12977304
申请日：2010-12-23
申请人： TIEN-KAN CHUNG , Chung-Hsien Lin , Yao-Te Huang , Chia-Hua Chu , Chia-Ming Hung , Wen-Chuan Tai , Chang-Yi Yang
发明人： TIEN-KAN CHUNG , Chung-Hsien Lin , Yao-Te Huang , Chia-Hua Chu , Chia-Ming Hung , Wen-Chuan Tai , Chang-Yi Yang
IPC分类号： H02N2/18 , H01L41/22 , F03G7/08
CPC分类号： H01L41/311 , B81B3/0021 , B81C1/00 , H01L41/113 , H01L41/1136 , H01L41/1138 , H01L41/22 , H01L41/312 , H02K35/04 , H02N2/186 , Y10T29/42 , Y10T29/49005 , Y10T29/49073 , Y10T29/49075 , Y10T29/49146
摘要： The present disclosure provides a micro device. The device has a micro-electro-mechanical systems (MEMS) movable structure, a plurality of metal loops over the MEMS movable structure, and a piezoelectric element over the MEMS movable structure. Frontside and backside capping wafers are bonded to the MEMS structure, with the frontside and backside capping wafers encapsulating the MEMS movable structure, the plurality of metal loops, and the piezoelectric element. The device further includes a magnet disposed on the frontside capping wafer over the plurality of metal loops.
摘要翻译：本公开提供了微型装置。该装置具有微电子机械系统（MEMS）可移动结构，MEMS可移动结构上的多个金属环以及MEMS可移动结构上方的压电元件。前侧和后侧封盖晶片被结合到MEMS结构，前侧和后侧封盖晶片封装MEMS可移动结构，多个金属环和压电元件。该装置还包括设置在多个金属环上的前侧封盖晶片上的磁体。

7. 发明申请

US20120098074A1 MEMS DEVICE WITH RELEASE APERTURE 有权
标题翻译：具有释放孔径的MEMS器件
公开(公告)号：US20120098074A1
公开(公告)日：2012-04-26
申请号：US12908985
申请日：2010-10-21
申请人： Chung-Hsien Lin , Chia-Hua Chu , Chun-Wen Cheng
发明人： Chung-Hsien Lin , Chia-Hua Chu , Chun-Wen Cheng
IPC分类号： H01L23/04 , H01L21/50
CPC分类号： B81B7/0058 , B81C1/00333 , B81C1/0038 , B81C2203/0136 , B81C2203/0145 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a method of fabricating a micro-electro-mechanical systems (MEMS) device. In an embodiment, a method includes providing a substrate including a first sacrificial layer, forming a micro-electro-mechanical systems (MEMS) structure above the first sacrificial layer, and forming a release aperture at substantially a same level above the first sacrificial layer as the MEMS structure. The method further includes forming a second sacrificial layer above the MEMS structure and within the release aperture, and forming a first cap over the second sacrificial layer and the MEMS structure, wherein a leg of the first cap is disposed between the MEMS structure and the release aperture. The method further includes removing the first sacrificial layer, removing the second sacrificial layer through the release aperture, and plugging the release aperture. A MEMS device formed by such a method is also provided.
摘要翻译：本公开提供了一种制造微机电系统（MEMS）装置的方法。在一个实施例中，一种方法包括提供包括第一牺牲层的衬底，在第一牺牲层之上形成微电子机械系统（MEMS）结构，以及在第一牺牲层之上的基本上相同的水平面上形成释放孔， MEMS结构。该方法还包括在MEMS结构之上和释放孔内形成第二牺牲层，以及在第二牺牲层和MEMS结构之上形成第一帽，其中第一帽的腿设置在MEMS结构和释放之间光圈。该方法还包括去除第一牺牲层，通过释放孔去除第二牺牲层并堵塞释放孔。还提供了通过这种方法形成的MEMS器件。

8. 发明申请

US20120061776A1 WAFER LEVEL PACKAGING 有权
标题翻译：水平包装
公开(公告)号：US20120061776A1
公开(公告)日：2012-03-15
申请号：US12879216
申请日：2010-09-10
申请人： Chun-Wen Cheng , Chung-Hsien Lin , Chia-Hua Chu
发明人： Chun-Wen Cheng , Chung-Hsien Lin , Chia-Hua Chu
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： B81B7/0032 , B81C1/00269 , B81C1/00333
摘要： A method of wafer level packaging includes providing a substrate including a buried oxide layer and a top oxide layer, and etching the substrate to form openings above the buried oxide layer and a micro-electro-mechanical systems (MEMS) resonator element between the openings, the MEMS resonator element enclosed within the buried oxide layer, the top oxide layer, and sidewall oxide layers. The method further includes filling the openings with polysilicon to form polysilicon electrodes adjacent the MEMS resonator element, removing the top oxide layer and the sidewall oxide layers adjacent the MEMS resonator element, bonding the polysilicon electrodes to one of a complementary metal-oxide semiconductor (CMOS) wafer or a carrier wafer, removing the buried oxide layer adjacent the MEMS resonator element, and bonding the substrate to a capping wafer to seal the MEMS resonator element between the capping wafer and one of the CMOS wafer or the carrier wafer.
摘要翻译：晶片级封装的方法包括提供包括掩埋氧化物层和顶部氧化物层的衬底，以及蚀刻衬底以在掩埋氧化物层之上形成开口和在开口之间的微电子机械系统（MEMS）谐振器元件，封装在掩埋氧化物层内的MEMS谐振器元件，顶部氧化物层和侧壁氧化物层。该方法还包括用多晶硅填充开口以形成邻近MEMS谐振器元件的多晶硅电极，去除与MEMS谐振器元件相邻的顶部氧化物层和侧壁氧化物层，将多晶硅电极连接到互补金属氧化物半导体（CMOS ）晶片或载体晶片，去除邻近MEMS谐振器元件的掩埋氧化物层，以及将衬底接合到封盖晶片，以密封封装晶片和CMOS晶片或载体晶片之一中的MEMS谐振器元件。

9. 发明授权

US08987059B2 MEMS devices and methods of forming same 有权
标题翻译： MEMS器件及其形成方法
公开(公告)号：US08987059B2
公开(公告)日：2015-03-24
申请号：US13571264
申请日：2012-08-09
申请人： Kai-Chih Liang , Chia-Hua Chu , Te-Hao Lee , Jiou-Kang Lee , Chung-Hsien Lin
发明人： Kai-Chih Liang , Chia-Hua Chu , Te-Hao Lee , Jiou-Kang Lee , Chung-Hsien Lin
IPC分类号： H01L21/50 , B81C1/00
CPC分类号： B81C1/00515 , B81B7/0006 , B81B7/0077 , B81B2201/0235 , B81B2203/0315 , B81B2207/07 , B81B2207/095 , B81B2207/096 , B81C1/00293 , B81C1/00301 , B81C2201/0132 , B81C2201/014 , B81C2203/0109 , B81C2203/0118 , B81C2203/0145 , B81C2203/035 , H01L2224/11
摘要： A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.
摘要翻译：微机电系统（MEMS）装置可以包括在第一基板上的MEMS结构。 MEMS结构包括可移动元件。在第一衬底上沉积第一导电材料并蚀刻第二衬底中的沟槽。用第二导电材料填充沟槽并在第二导电材料和第二衬底上沉积第三导电材料。将第一基板和第二基板接合并使第二基板的背面变薄，从而在沟槽中露出第二导电材料。

10. 发明申请

US20140287548A1 MEMS Device with Release Aperture 有权
标题翻译：具有释放孔径的MEMS器件
公开(公告)号：US20140287548A1
公开(公告)日：2014-09-25
申请号：US14225733
申请日：2014-03-26
申请人： Chung-Hsien Lin , Chia-Hua Chu , Chun-Wen Cheng
发明人： Chung-Hsien Lin , Chia-Hua Chu , Chun-Wen Cheng
IPC分类号： B81C1/00
CPC分类号： B81B7/0058 , B81C1/00333 , B81C1/0038 , B81C2203/0136 , B81C2203/0145 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a method of fabricating a micro-electro-mechanical systems (MEMS) device. In an embodiment, a method includes providing a substrate including a first sacrificial layer, forming a micro-electro-mechanical systems (MEMS) structure above the first sacrificial layer, and forming a release aperture at substantially a same level above the first sacrificial layer as the MEMS structure. The method further includes forming a second sacrificial layer above the MEMS structure and within the release aperture, and forming a first cap over the second sacrificial layer and the MEMS structure, wherein a leg of the first cap is disposed between the MEMS structure and the release aperture. The method further includes removing the first sacrificial layer, removing the second sacrificial layer through the release aperture, and plugging the release aperture. A MEMS device formed by such a method is also provided.
摘要翻译：本公开提供了一种制造微机电系统（MEMS）装置的方法。在一个实施例中，一种方法包括提供包括第一牺牲层的衬底，在第一牺牲层之上形成微电子机械系统（MEMS）结构，以及在第一牺牲层之上的基本上相同的水平面上形成释放孔， MEMS结构。该方法还包括在MEMS结构之上和释放孔内形成第二牺牲层，以及在第二牺牲层和MEMS结构之上形成第一帽，其中第一帽的腿设置在MEMS结构和释放之间光圈。该方法还包括去除第一牺牲层，通过释放孔去除第二牺牲层并堵塞释放孔。还提供了通过这种方法形成的MEMS器件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式