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    • 3. 发明授权
    • Small area high performance cell-based thermal diode
    • 小面积高性能基于电池的热二极管
    • US09383264B2
    • 2016-07-05
    • US13428549
    • 2012-03-23
    • Yung-Chow PengChing-Ho ChangJui-Cheng Huang
    • Yung-Chow PengChing-Ho ChangJui-Cheng Huang
    • G01K7/00G01K7/01
    • G01K7/01Y10T307/76
    • A thermal sensing system includes a circuit having a layout including standard cells arranged in rows and columns. First and second current sources provide first and second currents, respectively. The thermal sensing system includes thermal sensing units, first and second switching modules, and an analog to digital converter (ADC). Each thermal sensing unit is configured to provide a voltage drop dependent on a temperature at that thermal sensing unit. The first switching module is configured to select one of the thermal sensing units. The second switching module includes at least one switch controllable by a control signal. The at least one switch is configured to selectively couple the thermal sensing units, based on the control signal, to one of the first and second current sources, via the first switching module. The ADC is configured to convert an analog voltage, provided by the selected thermal sensing unit, to a digital value.
    • 热感测系统包括具有布置成行和列的标准单元的布局的电路。 第一和第二电流源分别提供第一和第二电流。 热感测系统包括热敏单元,第一和第二开关模块以及模数转换器(ADC)。 每个热敏单元被配置成提供取决于该热感测单元处的温度的电压降。 第一开关模块被配置为选择一个热感测单元。 第二开关模块包括可由控制信号控制的至少一个开关。 所述至少一个开关被配置为经由所述第一开关模块将所述热感测单元基于所述控制信号选择性地耦合到所述第一和第二电流源之一。 ADC配置为将所选热敏单元提供的模拟电压转换为数字值。
    • 4. 发明授权
    • Thermal sensor with second-order temperature curvature correction
    • 具有二阶温度曲率校正的热传感器
    • US09016939B2
    • 2015-04-28
    • US13632498
    • 2012-10-01
    • Ching-Ho ChangJui-Cheng HuangYung-Chow Peng
    • Ching-Ho ChangJui-Cheng HuangYung-Chow Peng
    • G01K7/00G01K7/01
    • G01K7/01G01K15/005
    • Some embodiments of the present disclosure relate to a stacked integrated chip structure having a thermal sensor that detects a temperature of one or a plurality of integrated chips. In some embodiments, the stacked integrated chip structure has a main integrated chip and a secondary integrated chip located on an interposer wafer. The main integrated chip has a reference voltage source that generates a bias current. The secondary integrated chip has a second thermal diode that receives the bias current and based thereupon generates a second thermal sensed voltage and a second reference voltage that is proportional to a temperature of the secondary integrated chip. A digital thermal sensor within the main integrated chip determines a temperature of the secondary integrated chip based upon as comparison of the second thermal sensed voltage and the reference voltage.
    • 本公开的一些实施例涉及具有检测一个或多个集成芯片的温度的热传感器的堆叠集成芯片结构。 在一些实施例中,堆叠集成芯片结构具有位于插入器晶片上的主集成芯片和次集成芯片。 主集成芯片具有产生偏置电流的参考电压源。 次级集成芯片具有接收偏置电流的第二热二极管,并且基于此产生第二热感测电压和与次级集成芯片的温度成比例的第二参考电压。 基于与第二热感测电压和参考电压的比较,主集成芯片内的数字热传感器确定二次集成芯片的温度。
    • 7. 发明申请
    • Thermal Sensor with Second-Order Temperature Curvature Correction
    • 具有二阶温度曲率校正的热传感器
    • US20140092939A1
    • 2014-04-03
    • US13632498
    • 2012-10-01
    • Ching-Ho ChangJui-Cheng HuangYung-Chow Peng
    • Ching-Ho ChangJui-Cheng HuangYung-Chow Peng
    • G01K7/01H01L23/544
    • G01K7/01G01K15/005
    • Some embodiments of the present disclosure relate to a stacked integrated chip structure having a thermal sensor that detects a temperature of one or a plurality of integrated chips. In some embodiments, the stacked integrated chip structure has a main integrated chip and a secondary integrated chip located on an interposer wafer. The main integrated chip has a reference voltage source that generates a bias current. The secondary integrated chip has a second thermal diode that receives the bias current and based thereupon generates a second thermal sensed voltage and a second reference voltage that is proportional to a temperature of the secondary integrated chip. A digital thermal sensor within the main integrated chip determines a temperature of the secondary integrated chip based upon as comparison of the second thermal sensed voltage and the reference voltage.
    • 本公开的一些实施例涉及具有检测一个或多个集成芯片的温度的热传感器的堆叠集成芯片结构。 在一些实施例中,堆叠集成芯片结构具有位于插入器晶片上的主集成芯片和次集成芯片。 主集成芯片具有产生偏置电流的参考电压源。 次级集成芯片具有接收偏置电流的第二热二极管,并且基于此产生第二热感测电压和与次级集成芯片的温度成比例的第二参考电压。 基于与第二热感测电压和参考电压的比较,主集成芯片内的数字热传感器确定二次集成芯片的温度。
    • 10. 发明授权
    • MEMS vacuum level monitor in sealed package
    • MEMS真空度监测仪在密封包装中
    • US08887573B2
    • 2014-11-18
    • US13401134
    • 2012-02-21
    • Tung-Tsun ChenJui-Cheng HuangChung-Hsien Lin
    • Tung-Tsun ChenJui-Cheng HuangChung-Hsien Lin
    • G01L11/00G01L13/02
    • G01L21/22B81C99/0045H01L27/0688
    • A vacuum sensor for sensing vacuum in a sealed enclosure is provided. The sealed enclosure includes active MEMS devices desired to be maintained in vacuum conditions. The vacuum sensor includes a motion beam anchored to an internal surface in the sealed enclosure. A driving electrode is disposed beneath the motion beam and a bias is supplied to cause the motion beam to deflect through electromotive force. A sensing electrode is also provided and detects capacitance between the sensing electrode disposed on the internal surface, and the motion beam. Capacitance changes as the gap between the motion beam and the sensing electrode changes. The amount of deflection is determined by the vacuum level in the sealed enclosure. The vacuum level in the sealed enclosure is thereby sensed by the sensing electrode.
    • 提供了用于感测密封外壳中的真空的真空传感器。 密封的外壳包括希望保持在真空条件下的有源MEMS器件。 真空传感器包括锚定在密封外壳中的内表面的运动梁。 驱动电极设置在运动光束下方,并且提供偏压以使运动光束通过电动势偏转。 还提供感测电极并且检测设置在内表面上的感测电极与运动光束之间的电容。 电容随着运动光束与感应电极之间的间隙而变化。 偏转量由密封外壳中的真空度决定。 因此,密封外壳中的真空度由感测电极感测。