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1. 发明申请

US20180231477A1 ROCK SAMPLE PREPARATION METHOD BY USING FOCUSED ION BEAM FOR MINIMIZING CURTAIN EFFECT 审中-公开
公开(公告)号：US20180231477A1
公开(公告)日：2018-08-16
申请号：US15685732
申请日：2017-08-24
申请人： Saudi Arabian Oil Company
发明人： Dong kyu Cha , Sultan Enezi , Mohammed Al Otaibi , Ali Abdallah Al-Yousef
IPC分类号： G01N23/04 , G01N33/24 , H01J37/147
CPC分类号： G01N23/046 , G01N1/28 , G01N23/225 , G01N33/24 , H01J37/1478 , H01J2237/049 , H01J2237/21 , H01J2237/31749
摘要： A process for the preparation and imaging of a sample of rock from an oil and gas reservoir is provided. A sample of reservoir rock may be obtained, such as from a core sample obtained using a core sampling tool inserted in a wellbore extending into an oil and gas reservoir. A photoresist may be deposited on the surface of reservoir rock sample to form a homogenous layer. The photoresist-coated surface of the reservoir rock sample may be imaged using a focused ion beam (FIB). The photoresist protects the pores and other surface features of the rock from damage or implantation by the FIB ion beam and thus minimizes the curtain effect in the resulting images.

2. 发明申请

US20170309442A1 HIGH VOLTAGE ELECTRON BEAM SYSTEM AND METHOD 有权
公开(公告)号：US20170309442A1
公开(公告)日：2017-10-26
申请号：US15486880
申请日：2017-04-13
申请人： APPLIED MATERIALS ISRAEL LTD.
发明人： Yosef Basson
IPC分类号： H01J37/20 , H01J37/18 , H01J37/248 , H01J37/28
CPC分类号： H01J37/20 , H01J37/09 , H01J37/16 , H01J37/18 , H01J37/226 , H01J37/248 , H01J37/28 , H01J2237/0206 , H01J2237/0262 , H01J2237/038 , H01J2237/049 , H01J2237/20292 , H01J2237/2813
摘要： A high voltage inspection system that includes a vacuum chamber; electron optics that is configured to direct an electron beam towards an upper surface of a substrate; a substrate support module that comprises a chuck and a housing; wherein the chuck is configured to support a substrate; wherein the housing is configured to surround the substrate without masking the electron beam, when the substrate is positioned on the chuck during a first operational mode of the high voltage inspection system; and wherein the substrate, the chuck and the housing are configured to (a) receive a high voltage bias signal of a high voltage level that exceeds ten thousand volts, and (b) to maintain at substantially the high voltage level during the first operational mode of the high voltage inspection system.

3. 发明申请

US20160365225A1 IN-SITU PLASMA CLEANING OF PROCESS CHAMBER COMPONENTS 审中-公开
标题翻译：过程室组件的现场等离子体清洁
公开(公告)号：US20160365225A1
公开(公告)日：2016-12-15
申请号：US14820747
申请日：2015-08-07
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Kevin Anglin , William Davis Lee , Peter Kurunczi , Ryan Downey , Jay T. Scheuer , Alexandre Likhanskii , William M. Holber
IPC分类号： H01J37/317 , B08B7/00 , H01J37/34 , H01J37/24
CPC分类号： H01J37/3171 , B08B7/0035 , H01J37/241 , H01J37/32862 , H01J37/3467 , H01J2237/022 , H01J2237/04756 , H01J2237/049 , H01J2237/057 , H01J2237/334 , H01J2237/335
摘要： Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having one or more conductive beam optics. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the conductive beam optics of the component, in parallel, to selectively (e.g., individually) generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the component, and a vacuum pump for adjusting pressure of an environment of the component.
摘要翻译：本文提供了用于离子注入系统的一个或多个组分的原位等离子体清洗的方法。在一种方法中，组件可以包括具有一个或多个导电束光学器件的束线分量。该系统还包括用于在处理模式期间向组件提供第一电压和第一电流的电源，以及在清洁模式期间向组件提供第二电压和第二电流的电源。第二电压和电流可以并联地施加到部件的导电束光学器件，以选择性地（例如，单独地）在一个或多个导电束光学器件中的一个或多个上产生等离子体。该系统还可以包括用于调节供应给部件的蚀刻剂气体的喷射速率的流量控制器和用于调节部件的环境压力的真空泵。

4. 发明授权

US09207539B1 Automatic optimization of etch process for accelerated yield ramp with matched charged particle multi-beam systems 有权
公开(公告)号：US09207539B1
公开(公告)日：2015-12-08
申请号：US14607821
申请日：2015-01-28
申请人： Multibeam Corporation
发明人： David K. Lam , Kevin M. Monahan , Theodore A. Prescop , Cong Tran
IPC分类号： H01J37/08 , H01J37/30 , G03F7/20 , H01J37/317 , H01J37/304
CPC分类号： H01J37/3177 , G03F7/2051 , G03F7/2059 , G06F17/5081 , H01J37/30 , H01J37/3005 , H01J37/304 , H01J37/3174 , H01J2237/04 , H01J2237/049 , H01J2237/1501 , H01J2237/24592 , H01J2237/30416 , H01J2237/30472 , H01J2237/31761 , H01J2237/31774 , H01J2237/31798 , H01L22/12 , H01L22/20
摘要： The present application discloses methods, systems and devices for using charged particle beam tools to pattern and inspect a substrate. The inventors have discovered that it is highly advantageous to use write and inspection tools that share the same or substantially the same stage and the same or substantially the same designs for respective arrays of multiple charged particle beam columns, and that access the same design layout database to target and pattern or inspect features. By using design-matched charged particle beam tools, correlation of defectivity is preserved between inspection imaging and the design layout database. As a result, image-based defect identification and maskless design correction, of random and systematic errors, can be performed directly in the design layout database, enabling a fast yield ramp.

5. 发明申请

US20150228444A1 METHOD AND APPARATUS FOR CONTROL OF COHERENT SYNCHROTRON RADIATION EFFECTS DURING RECIRCULATION WITH BUNCH COMPRESSION 有权
标题翻译：控制共振同步辐射效应的方法和装置
公开(公告)号：US20150228444A1
公开(公告)日：2015-08-13
申请号：US14526616
申请日：2014-10-29
申请人： JEFFERSON SCIENCE ASSOCIATES, LLC
发明人： David R. Douglas , Christopher Tennant
IPC分类号： H01J37/147
CPC分类号： H01J37/147 , H01J2237/049 , H01J2237/152 , H05H7/04 , H05H13/04 , H05H2007/043
摘要： A modulated-bending recirculating system that avoids CSR-driven breakdown in emittance compensation by redistributing the bending along the beamline. The modulated-bending recirculating system includes a) larger angles of bending in initial FODO cells, thereby enhancing the impact of CSR early on in the beam line while the bunch is long, and 2) a decreased bending angle in the final FODO cells, reducing the effect of CSR while the bunch is short. The invention describes a method for controlling the effects of CSR during recirculation and bunch compression including a) correcting chromatic aberrations, b) correcting lattice and CSR-induced curvature in the longitudinal phase space by compensating T566, and c) using lattice perturbations to compensate obvious linear correlations x-dp/p and x′-dp/p.
摘要翻译：一种调制循环系统，通过沿着光束线重新分布弯曲，避免了CSR驱动的发射补偿击穿。调制弯曲循环系统包括：a）在初始FODO单元中具有较大的弯曲角度，从而在束长时间增强了束线中CSR的冲击，以及2）最终FODO单元中弯曲角度减小企业社会责任的影响很小。本发明描述了一种用于控制再循环和束压缩期间CSR的影响的方法，包括：a）校正色差，b）通过补偿T566校正纵向相位空间中的晶格和CSR引起的曲率，以及c）使用晶格扰动来补偿明显的线性相关性x-dp / p和x'-dp / p。

6. 发明授权

US09099282B2 Focusing a charged particle imaging system 有权
标题翻译：聚焦带电粒子成像系统
公开(公告)号：US09099282B2
公开(公告)日：2015-08-04
申请号：US14228191
申请日：2014-03-27
申请人： Applied Materials Israel, Ltd. , Carl Zeiss SMT GMBH
发明人： Steven R. Rogers , Rainer K. Knippelmeyer , Thomas Kemen , Stefan Schubert , Nissim Elmaliah
IPC分类号： H01J37/09 , H01J37/26 , H01J37/153 , H01J37/21 , H01J37/22 , H01J37/28 , H01J37/29
CPC分类号： H01J37/21 , H01J37/06 , H01J37/09 , H01J37/153 , H01J37/22 , H01J37/222 , H01J37/244 , H01J37/261 , H01J37/28 , H01J37/29 , H01J2237/0453 , H01J2237/049 , H01J2237/063 , H01J2237/1532 , H01J2237/21 , H01J2237/2817
摘要： A charged particle beam focusing apparatus includes a charged particle beam generator configured to project simultaneously at least one non-astigmatic charged particle beam and at least one astigmatic charged particle beam onto locations on a surface of a specimen, thereby causing released electrons to be emitted from the locations. The apparatus also includes an imaging detector configured to receive the released electrons from the locations and to form images of the locations from the released electrons. A processor analyzes the image produced by the at least one non-astigmatic charged particle beam and in response thereto adjusts a focus of the at least one non-astigmatic charged particle beam.
摘要翻译：带电粒子束聚焦装置包括带电粒子束发生器，其被配置为同时将至少一个非散光带电粒子束和至少一个散光带电粒子束投射到样品表面上的位置，从而使释放的电子从的位置。该装置还包括成像检测器，其被配置为从该位置接收释放的电子并且从释放的电子形成位置的图像。处理器分析由至少一个非散光带电粒子束产生的图像，并且响应于此调整至少一个非散光带电粒子束的焦点。

7. 发明申请

US20140224985A1 FOCUSING A CHARGED PARTICLE IMAGING SYSTEM 有权
标题翻译：聚焦一个充电颗粒成像系统
公开(公告)号：US20140224985A1
公开(公告)日：2014-08-14
申请号：US14228191
申请日：2014-03-27
申请人： Carl Zeiss SMT GMBH , Applied Materials Israel, Ltd.
发明人： Steven R. Rodgers , Rainer K. Knippelmeyer , Thomas Kemen , Stefan Schubert , Nissim Elmaliah
IPC分类号： H01J37/21 , H01J37/26
CPC分类号： H01J37/21 , H01J37/06 , H01J37/09 , H01J37/153 , H01J37/22 , H01J37/222 , H01J37/244 , H01J37/261 , H01J37/28 , H01J37/29 , H01J2237/0453 , H01J2237/049 , H01J2237/063 , H01J2237/1532 , H01J2237/21 , H01J2237/2817
摘要： A charged particle beam focusing apparatus includes a charged particle beam generator configured to project simultaneously at least one non-astigmatic charged particle beam and at least one astigmatic charged particle beam onto locations on a surface of a specimen, thereby causing released electrons to be emitted from the locations. The apparatus also includes an imaging detector configured to receive the released electrons from the locations and to form images of the locations from the released electrons. A processor analyzes the image produced by the at least one non-astigmatic charged particle beam and in response thereto adjusts a focus of the at least one non-astigmatic charged particle beam.
摘要翻译：带电粒子束聚焦装置包括带电粒子束发生器，其被配置为同时将至少一个非散光带电粒子束和至少一个散光带电粒子束投射到样品表面上的位置，从而使释放的电子从的位置。该装置还包括成像检测器，其被配置为从该位置接收释放的电子并且从释放的电子形成位置的图像。处理器分析由至少一个非散光带电粒子束产生的图像，并且响应于此调整至少一个非散光带电粒子束的焦点。

8. 发明授权

US07714289B2 Charged particle beam apparatus 有权
标题翻译：带电粒子束装置
公开(公告)号：US07714289B2
公开(公告)日：2010-05-11
申请号：US12155347
申请日：2008-06-03
申请人： Yuko Sasaki , Mitsugu Sato
发明人： Yuko Sasaki , Mitsugu Sato
IPC分类号： G01N23/00
CPC分类号： H01J37/265 , G01N23/2251 , H01J2237/043 , H01J2237/049 , H01J2237/28
摘要： When conditions for an electron gun mainly represented by extraction voltage V1 and accelerating voltage V0 are changed, a charged particle beam is once focused on a fixed position by means of a condenser lens and a virtual cathode position is calculated from a lens excitation of the condenser lens at that time and the mechanical positional relation of the electron gun to set an optical condition. For more accurate setting of the optical condition, a deflecting electrode device is provided at a crossover position of the condenser lens and a voltage is applied to the deflecting electrode device at a constant period so as to control the lens excitation of the condenser lens such that the amount of movement of an image is minimized on an image display unit such as CRT.
摘要翻译：当主要由提取电压V1和加速电压V0表示的电子枪的条件改变时，通过聚光透镜将带电粒子束一次聚焦在固定位置，并且从冷凝器的透镜激发计算虚拟阴极位置透镜和电子枪的机械位置关系来设定光学条件。为了更精确地设置光学条件，在聚光透镜的交叉位置处设置偏转电极装置，并且将电压以恒定周期施加到偏转电极装置，以便控制聚光透镜的透镜激发，使得在诸如CRT的图像显示单元上图像的移动量最小化。

9. 发明授权

US07598495B2 Methods and systems for trapping ion beam particles and focusing an ion beam 有权
标题翻译：用于捕获离子束粒子并聚焦离子束的方法和系统
公开(公告)号：US07598495B2
公开(公告)日：2009-10-06
申请号：US11739934
申请日：2007-04-25
申请人： Peter L. Kellerman , Victor M. Benveniste , Alexander S. Perel , Brian S. Freer , Michael A. Graf
发明人： Peter L. Kellerman , Victor M. Benveniste , Alexander S. Perel , Brian S. Freer , Michael A. Graf
IPC分类号： H01J3/18
CPC分类号： H01J37/3171 , H01J37/12 , H01J2237/022 , H01J2237/049
摘要： A focusing particle trap system for ion implantation comprising an ion beam source that generates an ion beam, a beam line assembly that receives the ion beam from the ion beam source comprising a mass analyzer that selectively passes selected ions, a focusing electrostatic particle trap that receives the ion beam and removes particles from the ion beam comprising an entrance electrode comprising an entrance aperture and biased to a first base voltage, wherein the first surface of the entrance electrode is facing away from a center electrode and is approximately flat, wherein the second surface of the entrance electrode is facing toward the center electrode and is concave, wherein the center electrode is positioned a distance downstream from the entrance electrode comprising a center aperture and biased to a center voltage, wherein the center voltage is less than the first base voltage, wherein the first surface of the center electrode is facing toward the entrance electrode and is convex, wherein the second surface of the center electrode is facing away from the entrance electrode and is approximately flat, an exit electrode positioned a distance downstream from the center electrode comprising an exit aperture and biased to a second base voltage, and wherein the first surface of the exit electrode is facing toward the center electrode and is approximately flat, wherein the second surface of the exit electrode is facing away from the center electrode and is approximately flat, wherein a first electrostatic field is generated from the entrance electrode toward the center electrode and a second electrostatic field is generated from the exit electrode toward the center electrode; wherein the second base voltage is greater than the center voltage, and an end station that is downstream from the beam line assembly and receives the ion beam.
摘要翻译：一种用于离子注入的聚焦粒子捕获系统，包括产生离子束的离子束源，接收来自离子束源的离子束的束线组件，该束束组件包括选择性地通过选定离子的质量分析器，接收离子束并且从离子束中除去包含入口电极并且被偏置到第一基极电压的入口电极的颗粒，其中入口电极的第一表面背离中心电极并且近似平坦，其中第二表面所述入口电极面向所述中心电极并且是凹形的，其中所述中心电极位于与所述入口电极的下游距离的位置，所述入口电极包括中心孔并被偏压到中心电压，其中所述中心电压小于所述第一基极电压，其中所述中心电极的所述第一表面面向所述入口电极并且被连接 vex，其中所述中心电极的所述第二表面背离所述入口电极并且近似平坦，所述出口电极在所述中心电极的下游距离包括出口孔并且被偏压到第二基极电压，并且其中所述第一表面所述出射电极的面向所述中心电极并且近似平坦，其中所述出射电极的所述第二表面背离所述中心电极并且近似平坦，其中从所述入射电极朝向所述中心电极产生第一静电场并且从出射电极向中心电极产生第二静电场; 其中所述第二基极电压大于所述中心电压，以及在所述束线组件的下游并接收所述离子束的端站。

10. 发明授权

US07528390B2 Broad beam ion implantation architecture 有权
标题翻译：宽束离子注入架构
公开(公告)号：US07528390B2
公开(公告)日：2009-05-05
申请号：US11540897
申请日：2006-09-29
申请人： Shu Satoh
发明人： Shu Satoh
IPC分类号： H01J37/08 , H01J37/317 , H01J37/302
CPC分类号： H01J37/3171 , H01J37/05 , H01J37/14 , H01J2237/049 , H01J2237/055 , H01J2237/057
摘要： An ion implantation system for providing a mass analyzed ribbon beam that comprises an ion beam source that includes a plasma source and an extraction component, wherein the extraction component is configured to extract a diverging ion beam and direct the ion beam to a window frame magnet assembly. The window frame magnet assembly comprises two pairs of coils orthogonally arranged within a window shaped yoke to produce an independently controllable uniform cross-field magnetic field. The first set of coils create an uniform field across the width of the diverging beam to convert it to a uniform parallel broad ion beam. The second set of coils bend the sheet of the ion beam in orthogonal direction to give mass dispersion for ion mass selection.
摘要翻译：一种用于提供质量分析的带状束的离子注入系统，其包括包括等离子体源和提取部件的离子束源，其中所述提取部件被配置为提取发散的离子束并将所述离子束引导到窗框磁体组件。窗框磁体组件包括正交布置在窗形磁轭内的两对线圈，以产生可独立控制的均匀的交叉磁场。第一组线圈在发散光束的宽度上形成均匀的场，以将其转换成均匀的平行宽离子束。第二组线圈在垂直方向上弯曲离子束的片材，以提供用于离子质量选择的质量分散。

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