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    • 3. 发明授权
    • Dynamic current supplying pump
    • 动态电流泵
    • US08067978B2
    • 2011-11-29
    • US12577726
    • 2009-10-13
    • Ryan Andrew Jurasek
    • Ryan Andrew Jurasek
    • H02M3/16G05F1/46
    • H02M3/073H02M2001/0041
    • A pump system that can dynamically increase its current capability includes: a pump circuit, for producing an output voltage; an oscillator, for driving the pump circuit to pump at a particular frequency according to a pump enable signal; a limiter, coupled to both the oscillator and the output voltage fed back from the pump circuit, for generating the pump enable signal to the oscillator according to the output voltage feedback signal; and an edge timer, coupled to both the oscillator and the pump enable signal, for driving the oscillator to operate at an increased frequency according to a threshold parameter of the pump enable signal.
    • 可以动态增加其电流能力的泵系统包括:用于产生输出电压的泵电路; 振荡器,用于根据泵使能信号驱动泵电路以特定频率泵送; 限制器,耦合到从泵电路反馈的振荡器和输出电压,以根据输出电压反馈信号产生到振荡器的泵使能信号; 以及边缘定时器,其耦合到振荡器和泵使能信号两者,用于根据泵使能信号的阈值参数驱动振荡器以增加的频率工作。
    • 4. 发明授权
    • Charge pump circuit for high voltage generation
    • 电荷泵电路用于高压发电
    • US07741898B2
    • 2010-06-22
    • US11656733
    • 2007-01-23
    • Jen-Shou Hsu
    • Jen-Shou Hsu
    • G05F3/08H02M3/16
    • H02M3/073H02M2003/077
    • A circuit and method are given, to realize a high efficiency voltage multiplier for integrated circuits generating an internal and flexible positive or negative high voltage on-chip supply voltage from low external positive or negative supply voltages or ground. Applying multi-phase control signals to voltage boost internal nodes allows for eliminating threshold voltage drop losses and thus improves the voltage pumping gain compared to circuits with diode-configured FETs of prior art. Making use of voltage signals from antecedent stages in order to bias the bulk of MOS transistors fabricated in triple-well technology enables relaxing of the gate oxide stress within high order stage MOS transistors. Such a method, called leap-frog bulk potential tracking method, makes MOS transistors from different stages exhibit about the same body effect, which is very important because MOS transistors of higher order stages now show the same performance as MOS transistors from lower order stages. Important also in terms of efficiency as the charge sharing speed of high order MOS transistors always dominates the total charge pump performance and the driving force of pumped currents, thus also allowing for a greater number of serially connectable stages overall or a smaller number necessary for a certain targeted output voltage.
    • 给出了一种电路和方法,以实现集成电路的高效率电压倍增器,从低的外部正或负电源电压或接地产生内部和灵活的正或负高压片上电源电压。 将多相控制信号施加到升压内部节点允许消除阈值电压降损耗,因此与现有技术的具有二极管配置的FET的电路相比,提高了电压泵浦增益。 利用来自前级的电压信号,以偏置三重阱技术制造的MOS晶体管的大部分,可以缓解高阶MOS晶体管内的栅氧化层应力。 这种称为跨跳体积电位跟踪方法的方法使得来自不同阶段的MOS晶体管呈现出相同的体效应,这是非常重要的,因为高阶级的MOS晶体管现在与低阶级的MOS晶体管具有相同的性能。 在效率方面也是重要的,因为高阶MOS晶体管的电荷共享速度总是占据总电荷泵性能和泵浦电流的驱动力,因此还允许更多数量的可串行连接级或更少数量的 某些有针对性的输出电压。
    • 10. 发明授权
    • Charge-pump circuit
    • 电荷泵电路
    • US07602231B2
    • 2009-10-13
    • US11526060
    • 2006-09-25
    • Yasue YamamotoYasuhiro AgataMasanori ShirahamaToshiaki Kawasaki
    • Yasue YamamotoYasuhiro AgataMasanori ShirahamaToshiaki Kawasaki
    • G05F3/24H02M3/16H01L27/04
    • H02M3/07
    • A circuit includes a plurality of stages each including a MOS transistor and a capacitor of which one end is connected to one of a drain and a source of the MOS transistor. The plurality of stages are connected with each other by cascade connection of the MOS transistors. A gate of the MOS transistor is connected electrically to one of the drain and the source thereof in each stage, and a substrate for at least one pair of adjacent MOS transistors are connected electrically to one of the drain and the source of one of the pair. The back bias effect is suppressed, and the layout area is reduced. Further, a plurality of booster capacitors connected in series are provided in succeeding stages, thereby suppressing degradation of breakdown voltage of each capacitor.
    • 电路包括多个级,每个级包括MOS晶体管和电容器,其一端连接到MOS晶体管的漏极和源极之一。 多个级通过MOS晶体管的级联连接而相互连接。 MOS晶体管的栅极在每个级中电连接到漏极和源极之一,并且用于至少一对相邻MOS晶体管的衬底电连接到该对之一的漏极和源极之一 。 背偏置效果被抑制,布局面积减小。 此外,在后续阶段提供串联连接的多个升压电容器,从而抑制每个电容器的击穿电压的劣化。