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91. 发明授权

US10453689B2 Ion implantation method and ion implantation apparatus 有权
公开(公告)号：US10453689B2
公开(公告)日：2019-10-22
申请号：US15457841
申请日：2017-03-13
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Yoji Kawasaki , Makoto Sano , Kazutaka Tsukahara
IPC分类号： H01L21/265 , H01L21/66 , H01J37/317 , H01L29/36 , H01L29/66 , H01L29/04
摘要： An ion implantation method includes: irradiating a wafer arranged to meet a predetermined plane channeling condition with an ion beam; measuring a predetermined characteristic on a surface of the wafer irradiated with the ion beam; and evaluating an implant angle distribution of the ion beam by using a result of measurement of the characteristic. The wafer may be arranged so as to include a channeling plane parallel to a predetermined reference plane parallel to a reference trajectory direction of the ion beam incident on the wafer and not to include a channeling plane perpendicular to the reference plane and parallel to the reference trajectory direction.

92. 发明授权

US10361066B2 Ion implantation apparatus 有权
公开(公告)号：US10361066B2
公开(公告)日：2019-07-23
申请号：US15908614
申请日：2018-02-28
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Haruka Sasaki , Katsushi Fujita
IPC分类号： H01J37/317 , H01J37/08
摘要： An ion implantation apparatus includes an ion source that is capable of generating a calibration ion beam including a multiply charged ion which has a known energy corresponding to an extraction voltage, an upstream beamline that includes amass analyzing magnet and a high energy multistage linear acceleration unit, an energy analyzing magnet, a beam energy measuring device that measures an energy of the calibration ion beam downstream of the energy analyzing magnet, and a calibration sequence unit that produces an energy calibration table representing a correspondence relation between the known energy and the energy of the calibration ion beam measured by the beam energy measuring device. An upstream beamline pressure is adjusted to a first pressure during an ion implantation process, and is adjusted to a second pressure higher than the first pressure while the energy calibration table is produced.

93. 发明申请

US20180350559A1 ION IMPLANTER AND ION IMPLANTATION METHOD 审中-公开
公开(公告)号：US20180350559A1
公开(公告)日：2018-12-06
申请号：US15994221
申请日：2018-05-31
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Hiroshi Matsushita , Yoshiaki Oogita
IPC分类号： H01J37/317 , H01J37/02 , H01J37/05 , H01J37/147 , H01J27/02
摘要： An ion implanter includes an ion source configured to generate an ion beam including an ion of a first nonradioactive nuclide, a beamline configured to support an ion beam irradiated target formed of a solid material including a second nonradioactive nuclide different from the first nonradioactive nuclide, and a controller configured to calculate at least one of an estimated radiation dosage of a radioactive ray and an estimated generation amount of a radioactive nuclide generated by a nuclear reaction between the first nonradioactive nuclide and the second nonradioactive nuclide.

94. 发明申请

US20180330920A1 ION IMPLANTATION APPARATUS 审中-公开
公开(公告)号：US20180330920A1
公开(公告)日：2018-11-15
申请号：US15908614
申请日：2018-02-28
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Haruka Sasaki , Katsushi Fujita
IPC分类号： H01J37/317 , H01J37/08
CPC分类号： H01J37/3171 , H01J37/08 , H01J2237/006 , H01J2237/0473 , H01J2237/055 , H01J2237/24585 , H01J2237/30433
摘要： An ion implantation apparatus includes an ion source that is capable of generating a calibration ion beam including a multiply charged ion which has a known energy corresponding to an extraction voltage, an upstream beamline that includes amass analyzing magnet and a high energy multistage linear acceleration unit, an energy analyzing magnet, a beam energy measuring device that measures an energy of the calibration ion beam downstream of the energy analyzing magnet, and a calibration sequence unit that produces an energy calibration table representing a correspondence relation between the known energy and the energy of the calibration ion beam measured by the beam energy measuring device. An upstream beamline pressure is adjusted to a first pressure during an ion implantation process, and is adjusted to a second pressure higher than the first pressure while the energy calibration table is produced.

95. 发明申请

US20170040197A1 ION IMPLANTATION APPARATUS AND METHOD FOR PROCESSING PLURALITY OF WAFERS USING THE SAME 审中-公开
标题翻译：离子植入装置和使用该方法处理多个等离子体的方法
公开(公告)号：US20170040197A1
公开(公告)日：2017-02-09
申请号：US15228754
申请日：2016-08-04
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Tetsuya Kudo , Shinji Ebisu , Yoshito Fujii
IPC分类号： H01L21/677 , H01L21/68 , C23C14/48 , H01L21/67
CPC分类号： H01L21/67778 , C23C14/48 , H01J2237/184 , H01J2237/20207 , H01J2237/204 , H01J2237/31701 , H01L21/67196 , H01L21/67201 , H01L21/67213 , H01L21/67742 , H01L21/67745 , H01L21/67748 , H01L21/67766 , H01L21/68 , H01L21/68764
摘要： A first conveyance mechanism and a second conveyance mechanism convey a pair of two wafers to an alignment device from a wafer container via a buffer device, and then bring the wafers respectively into a first load lock chamber and a second load lock chamber after alignment. An intermediate conveyance mechanism conveys one of the pair of two wafers between the first load lock chamber and a vacuum processing chamber. The intermediate conveyance mechanism conveys the other of the pair of two wafers between the second load lock chamber and the vacuum processing chamber. The first conveyance mechanism and the second conveyance mechanism take out the pair of two wafers subjected to an implantation process from the first load lock chamber and the second load lock chamber and store the wafers into the wafer container.
摘要翻译：第一传送机构和第二传送机构经由缓冲装置从晶片容器将一对两个晶片传送到对准装置，然后在对准之后将晶片分别带入第一负载锁定室和第二负载锁定室。中间输送机构在第一负载锁定室和真空处理室之间输送一对两个晶片中的一个。中间输送机构将两对晶片中的另一方输送到第二负载锁定室和真空处理室之间。第一输送机构和第二输送机构从第一负载锁定室和第二负载锁定室取出经受了植入处理的一对两个晶片，并将晶片储存在晶片容器中。

96. 发明授权

US09564292B2 Ion beam measuring device and method of measuring ion beam 有权
标题翻译：离子束测量装置及测量离子束的方法
公开(公告)号：US09564292B2
公开(公告)日：2017-02-07
申请号：US14314448
申请日：2014-06-25
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Noriyasu Ido , Kouji Inada , Kazuhiro Watanabe
IPC分类号： H01J37/304 , H01J37/317 , H01J37/244
CPC分类号： H01J37/3171 , H01J37/244 , H01J2237/24405 , H01J2237/24528 , H01J2237/24535
摘要： An ion beam measuring device includes: a mask that is used for shaping an original ion beam into a measuring ion beam including a y beam part elongated in a y direction that is perpendicular to a traveling direction of the ion beam and an x beam part elongated in an x direction that is perpendicular to the traveling direction and the y direction; a detection unit that is configured to detect an x-direction position of the y beam part and a y-direction position of the x beam part; and a beam angle calculating unit that is configured to calculate an x-direction beam angle using the x-direction position and a y-direction beam angle using the y-direction position.
摘要翻译：一种离子束测量装置，包括：掩模，其用于将原始离子束成形为测量离子束，所述测量离子束包括垂直于离子束的行进方向的ay方向延长的ay光束部分和在垂直于离子束的行进方向延伸的x光束部分 x方向垂直于行进方向和y方向; 检测单元，被配置为检测所述y光束部分的x方向位置和所述x光束部分的y方向位置; 以及射束角计算单元，被配置为使用y方向位置来计算x方向射束角度，并且使用y方向位置来计算y方向射束角度。

97. 发明授权

US09564289B2 Ion implanter and method of controlling the same 有权
标题翻译：离子注入机及其控制方法
公开(公告)号：US09564289B2
公开(公告)日：2017-02-07
申请号：US14793265
申请日：2015-07-07
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Tadanobu Kagawa , Toshio Yumiyama , Takeshi Kurose
IPC分类号： H01J37/317 , H01J37/24
CPC分类号： H01J37/241 , H01J37/3171
摘要： An ion implanter includes a high-voltage power supply, a control unit that generates a command signal controlling an output voltage of the high-voltage power supply, an electrode unit to which the output voltage is applied, and a measurement unit that measures an actual voltage applied to the electrode unit. The control unit includes a first generation section that generates a first command signal for allowing the high-voltage power supply to output a target voltage, a second generation section that generates a second command signal for complementing the first command signal so that the actual voltage measured by the measurement unit becomes or close to the target voltage, and a command section that brings to the high-voltage power supply a synthetics command signal which is produced by synthesizing the first command signal and the second command signal.
摘要翻译：离子注入机包括高压电源，产生控制高电压电源的输出电压的指令信号的控制单元，施加输出电压的电极单元和测量实际的测量单元施加到电极单元的电压。控制单元包括：第一生成部，其生成用于使高压电源输出目标电压的第一指令信号;第二生成部，生成用于补充第一指令信号的第二指令信号，使得测量的实际电压通过测量单元变得或接近目标电压，以及命令部分，其通过合成第一命令信号和第二命令信号而产生合成命令信号给高压电源。

98. 发明授权

US09384944B2 Ion implanter and ion implantation method 有权
标题翻译：离子注入机和离子注入法
公开(公告)号：US09384944B2
公开(公告)日：2016-07-05
申请号：US14693323
申请日：2015-04-22
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Mitsuaki Kabasawa , Masaki Ishikawa , Yusuke Ueno
IPC分类号： H01J37/00 , H01J37/317 , H01J37/244 , H01J37/141 , H01J37/147
CPC分类号： H01J37/3171 , H01J37/141 , H01J37/1471 , H01J37/1474 , H01J37/244 , H01J37/3045 , H01J2237/14 , H01J2237/15 , H01J2237/31701
摘要： A beamline unit of an ion implanter includes a steering electromagnet, a beam scanner, and a beam collimator. The beamline unit contains a reference trajectory of an ion beam. The steering electromagnet deflects the ion beam in an x direction perpendicular to a z direction. The beam scanner deflects the ion beam in the x direction in a reciprocating manner to scan the ion beam. The beam collimator includes a collimating lens that collimates the scanned ion beam in the z direction along the reference trajectory, and the collimating lens has a focus at a scan origin of the beam scanner. A controller corrects a deflection angle in the x direction in the steering electromagnet so that an actual trajectory of the deflected ion beam intersects with the reference trajectory at the scan origin on an xz plane.
摘要翻译：离子注入机的光束单元包括转向电磁体，光束扫描器和光束准直器。束线单元包含离子束的参考轨迹。转向电磁铁使垂直于z方向的x方向偏转离子束。光束扫描器以往复方式沿x方向偏转离子束以扫描离子束。光束准直仪包括准直透镜，其沿着参考轨迹沿z方向校准扫描的离子束，并且准直透镜在光束扫描器的扫描原点处具有焦点。控制器校正转向电磁铁中的x方向上的偏转角，使得偏转的离子束的实际轨迹与xz平面上的扫描原点处的参考轨迹相交。

99. 发明授权

US09368327B2 High-energy ion implanter 有权
标题翻译：高能离子注入机
公开(公告)号：US09368327B2
公开(公告)日：2016-06-14
申请号：US14302901
申请日：2014-06-12
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Mitsuaki Kabasawa , Tatsuo Nishihara , Kazuhiro Watanabe , Yuuji Takahashi , Tatsuya Yamada
IPC分类号： H01J37/317 , H01J37/30
CPC分类号： H01J37/3171 , H01J37/3007 , H01J2237/053 , H01J2237/057 , H01J2237/12 , H01J2237/14
摘要： A high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass analyzer; a high-energy multi-stage linear acceleration unit that accelerates an ion beam so as to generate a high-energy ion beam; a high-energy beam deflection unit that changes the direction of the high-energy ion beam toward the wafer; and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The deflection unit is configured by a plurality of deflection electromagnets, and at least a horizontal focusing element is inserted between the plurality of deflection electromagnets.
摘要翻译：高能离子注入机包括：束生成单元，其包括离子源和质量分析器; 高能量多级线性加速单元，其加速离子束以产生高能离子束; 高能量束偏转单元，其将高能离子束的朝向晶片的方向改变; 以及将偏转的高能离子束输送到晶片的光束传送单元。偏转单元由多个偏转电磁体构成，并且在多个偏转电磁体之间插入至少一个水平聚焦元件。

100. 发明授权

US09336992B2 Ion implantation apparatus 有权
标题翻译：离子注入装置
公开(公告)号：US09336992B2
公开(公告)日：2016-05-10
申请号：US14746277
申请日：2015-06-22
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Yoshitaka Amano
IPC分类号： H01J37/00 , H01J37/317 , H01J37/10 , H01J37/244
CPC分类号： H01J37/3171 , H01J37/10 , H01J37/244 , H01J2237/038 , H01J2237/1202 , H01J2237/16
摘要： An ion implantation apparatus includes: a lens electrode unit including a plurality of electrode sections for parallelizing an ion beam; and a vacuum unit that houses the lens electrode unit in a vacuum environment. The vacuum unit includes: a first vacuum container having a first conductive container wall; a second vacuum container having a second conductive container wall; and an insulating container wall that allows the first vacuum container and the second vacuum container to communicate with each other and that insulates the first conductive container wall from the second conductive container wall. An insulating member is provided that insulates at least one electrode section of the lens electrode unit from at least one of the first conductive container wall and the second conductive container wall, and the insulating member is housed in the vacuum environment together with the lens electrode unit.
摘要翻译：离子注入装置包括：透镜电极单元，包括用于使离子束平行化的多个电极部分; 以及在真空环境中容纳透镜电极单元的真空单元。真空单元包括：具有第一导电容器壁的第一真空容器; 具有第二导电容器壁的第二真空容器; 以及允许第一真空容器和第二真空容器彼此连通并使第一导电容器壁与第二导电容器壁绝缘的绝缘容器壁。提供了一种绝缘构件，其将透镜电极单元的至少一个电极部分与第一导电容器壁和第二导电容器壁中的至少一个绝缘，并且绝缘构件与透镜电极单元一起容纳在真空环境中。

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