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11. 发明授权

US07745975B2 Piezoelectric thin film resonator, piezoelectric thin film resonator filter and manufacturing method thereof 失效
标题翻译：压电薄膜谐振器，压电薄膜谐振滤波器及其制造方法
公开(公告)号：US07745975B2
公开(公告)日：2010-06-29
申请号：US11704995
申请日：2007-02-12
申请人： Kengo Asai , Hisanori Matsumoto , Atsushi Isobe
发明人： Kengo Asai , Hisanori Matsumoto , Atsushi Isobe
IPC分类号： H01L41/08
CPC分类号： H03H9/175 , H03H3/04 , H03H9/02149 , H03H9/173 , H03H9/174 , H03H9/21 , H03H9/706 , H03H2003/021 , H03H2003/023 , H03H2003/025 , H03H2003/026 , Y10T29/42
摘要： A piezoelectric thin film resonator includes: a piezoelectric thin film; a laminated structure which includes a first metal electrode film and a second metal electrode film that interpose at least a part of the piezoelectric thin film, and which is formed on a substrate; and an acoustic insulating layer which is formed on the substrate at a position corresponding to the laminated structure, wherein the first metal electrode film is formed on the substrate and the second metal electrode film is formed on the first metal electrode film while sandwiching the piezoelectric thin film, and a protection film laminated on the second metal electrode film is provided so as to cover the second metal electrode film.
摘要翻译：压电薄膜谐振器包括：压电薄膜; 层压结构，其包括第一金属电极膜和介于所述压电薄膜的至少一部分之间并形成在基板上的第二金属电极膜; 以及声学绝缘层，其在与所述层叠结构相对应的位置处形成在所述基板上，其中，所述第一金属电极膜形成在所述基板上，并且所述第二金属电极膜形成在所述第一金属电极膜上，同时夹着所述压电薄片膜和层叠在第二金属电极膜上的保护膜设置成覆盖第二金属电极膜。

12. 发明授权

US07561010B2 Piezoelectric thin film resonators 失效
标题翻译：压电薄膜谐振器
公开(公告)号：US07561010B2
公开(公告)日：2009-07-14
申请号：US11333282
申请日：2006-01-18
申请人： Mitsutaka Hikita , Nobuhiko Shibagaki , Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
发明人： Mitsutaka Hikita , Nobuhiko Shibagaki , Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
IPC分类号： H03H9/13 , H03H9/15 , H03H3/04
CPC分类号： H03H9/174 , H03H9/02102 , H03H9/173 , H03H9/178
摘要： A piezoelectric thin film resonator is formed on a base substrate such as made of Si in which the resonance frequency is substantially determined by the lateral size not by the thickness of the resonator, whereby a resonator for use in TCXO, etc. is provided by the thin film technique, which enables to reduce the thickness of the film and the size of the resonator and integration with Si-based IC incorporating the resonator in one identical substrate.
摘要翻译：压电薄膜谐振器形成在诸如由Si构成的基底衬底上，其中谐振频率基本上由横向尺寸决定，而不是谐振器的厚度，由此由TCXO等使用的谐振器由薄膜技术，其能够减小膜的厚度和谐振器的尺寸以及将谐振器的Si基IC集成在一个相同的衬底中。

13. 发明授权

US07408287B2 Film bulk acoustic wave resonator, film bulk acoustic wave resonator filter and method of manufacturing film bulk acoustic wave resonator 失效
标题翻译：薄膜体声波谐振器，薄膜体声波谐振滤波器及薄膜体声波谐振器的制造方法
公开(公告)号：US07408287B2
公开(公告)日：2008-08-05
申请号：US11602330
申请日：2006-11-21
申请人： Hisanori Matsumoto , Kengo Asai , Atsushi Isobe , Mitsutaka Hikita
发明人： Hisanori Matsumoto , Kengo Asai , Atsushi Isobe , Mitsutaka Hikita
IPC分类号： H01L41/083
CPC分类号： H03H9/564 , H03H3/04 , H03H9/02157 , H03H9/174 , H03H9/568 , H03H2003/023 , H03H2003/0442 , H03H2003/0471
摘要： The present invention provides a film bulk acoustic wave resonator (FBAR) filter that can keep the Q factor high. The FBAR filter comprises a first FBAR with a first resonant frequency and a second FBAR with a second resonant frequency, formed on a same substrate. The FBAR filter has such a structure that a first underlayer is formed between the substrate and a first bottom electrode layer and a second underlayer is formed between the substrate and a second bottom electrode layer, the first underlayer thickness being different from the second underlayer thickness.
摘要翻译：本发明提供一种可以使Q因子保持高的薄膜体声波谐振器（FBAR）滤波器。 FBAR滤波器包括形成在同一衬底上的具有第一谐振频率的第一FBAR和具有第二谐振频率的第二FBAR。 FBAR滤光器具有在基板和第一底部电极层之间形成第一底层的结构，在基板和第二底部电极层之间形成第二下层，第一下层厚度与第二下层厚度不同。

14. 发明申请

US20080169728A1 Piezoelectric thin film resonator, piezoelectric thin film resonator filter and manufacturing method thereof 失效
标题翻译：压电薄膜谐振器，压电薄膜谐振滤波器及其制造方法
公开(公告)号：US20080169728A1
公开(公告)日：2008-07-17
申请号：US11704995
申请日：2007-02-12
申请人： Kengo Asai , Hisanori Matsumoto , Atsushi Isobe
发明人： Kengo Asai , Hisanori Matsumoto , Atsushi Isobe
IPC分类号： H01L41/04 , H01L41/22
CPC分类号： H03H9/175 , H03H3/04 , H03H9/02149 , H03H9/173 , H03H9/174 , H03H9/21 , H03H9/706 , H03H2003/021 , H03H2003/023 , H03H2003/025 , H03H2003/026 , Y10T29/42
摘要： A piezoelectric thin film resonator includes: a piezoelectric thin film; a laminated structure which includes a first metal electrode film and a second metal electrode film that interpose at least a part of the piezoelectric thin film, and which is formed on a substrate; and an acoustic insulating layer which is formed on the substrate at a position corresponding to the laminated structure, wherein the first metal electrode film is formed on the substrate and the second metal electrode film is formed on the first metal electrode film while sandwiching the piezoelectric thin film, and a protection film laminated on the second metal electrode film is provided so as to cover the second metal electrode film.
摘要翻译：压电薄膜谐振器包括：压电薄膜; 层压结构，其包括第一金属电极膜和介于所述压电薄膜的至少一部分之间并形成在基板上的第二金属电极膜; 以及声学绝缘层，其在与所述层叠结构相对应的位置处形成在所述基板上，其中，所述第一金属电极膜形成在所述基板上，并且所述第二金属电极膜形成在所述第一金属电极膜上，同时夹着所述压电薄片膜和层叠在第二金属电极膜上的保护膜设置成覆盖第二金属电极膜。

15. 发明申请

US20070182291A1 THIN FILM TUNING-FORK TYPE INFLECTION RESONATOR AND ELECTRIC SIGNAL PROCESSING ELEMENT 失效
标题翻译：薄膜调谐型输入谐振器和电信号处理元件
公开(公告)号：US20070182291A1
公开(公告)日：2007-08-09
申请号：US11670081
申请日：2007-02-01
申请人： Atsushi Isobe , Nobuhiko Shibagaki , Kengo Asai , Hisanori Matsumoto
发明人： Atsushi Isobe , Nobuhiko Shibagaki , Kengo Asai , Hisanori Matsumoto
IPC分类号： H03H9/21
CPC分类号： H03H9/21 , H03H2003/026
摘要： A compact resonator has a wide bandwidth and a small variation of the specific vibration frequency. The resonator is a thin film tuning-fork type inflection resonator in which a thin film made of a piezoelectric material is formed on a substrate on which a lower electrode is formed, and an upper electrode is formed on the piezoelectric thin film.
摘要翻译：紧凑型谐振器具有宽带宽和特定振动频率的小变化。谐振器是薄膜音叉式拐点共振器，其中在其上形成有下电极的基板上形成由压电材料制成的薄膜，并且在压电薄膜上形成上电极。

16. 发明申请

US20060139122A1 Bulk acoustic wave resonator and manufacturing method thereof, filter using the same, semiconductor integrated circuit device using the same, and high frequency module using the same 失效
标题翻译：体声波谐振器及其制造方法，使用其的滤波器，使用其的半导体集成电路器件，以及使用其的高频模块
公开(公告)号：US20060139122A1
公开(公告)日：2006-06-29
申请号：US11067374
申请日：2005-02-28
申请人： Kengo Asai , Hisanori Matsumoto , Atsushi Isobe , Mitsutaka Hikita
发明人： Kengo Asai , Hisanori Matsumoto , Atsushi Isobe , Mitsutaka Hikita
IPC分类号： H03H9/70 , H03H9/56 , H03H9/58
CPC分类号： H03H3/02 , H03H9/0542 , H03H9/0571 , H03H9/174 , H03H9/564 , H03H9/706
摘要： A bulk acoustic wave resonator in which the problem of the technology for forming the diaphragm structure is resolved, which is more compact and improved the frequency accuracy, and the manufacturing method thereof, a filter using the same, a semiconductor integrated circuit device using the same, and a high frequency module using the same are provided. The bulk acoustic wave resonator according to the present invention comprises a substrate having a first surface and a second surface opposite to the first surface, and a staked resonator including a first electrode film in contact with the first surface, a piezoelectric film overlaying the first electrode film and a second electrode film overlaying the piezoelectric film. The substrate is provided with an air gap including a first aperture opening at the first surface and a second aperture opening at the second surface at the position corresponding to the staked resonator, respectively and having air gap generally vertical shape to the first surface, and another air gap having a tapered shape in the vicinity of the first surface.
摘要翻译：解决了用于形成隔膜结构的技术的问题的体声波谐振器，其更紧凑并且提高了频率精度，其制造方法，使用该隔膜结构的滤波器，使用该隔膜结构的半导体集成电路器件，并且提供使用该模块的高频模块。根据本发明的体声波谐振器包括具有与第一表面相对的第一表面和第二表面的基板，以及包括与第一表面接触的第一电极膜的支架谐振器，覆盖第一电极的压电膜膜和覆盖压电膜的第二电极膜。衬底设置有气隙，该空气间隙包括在第一表面处的第一孔径开口和位于对应于桩状共振器的位置处的第二表面处的第二孔口开口，并且具有大致垂直于第一表面的气隙，另一个气隙在第一表面附近具有锥形形状。

17. 发明申请

US20050099252A1 RF-MEMS switch and its fabrication method 失效
标题翻译： RF-MEMS开关及其制造方法
公开(公告)号：US20050099252A1
公开(公告)日：2005-05-12
申请号：US10902573
申请日：2004-07-30
申请人： Atsushi Isobe , Akihisa Terano , Kengo Asai , Hiroyuki Uchiyama , Hisanori Matsumoto
发明人： Atsushi Isobe , Akihisa Terano , Kengo Asai , Hiroyuki Uchiyama , Hisanori Matsumoto
IPC分类号： B81B3/00 , B81C1/00 , H01H1/20 , H01H59/00 , H01P1/12 , H01H51/22
CPC分类号： H01H59/0009 , H01H1/20 , H01P1/127
摘要： An inexpensive MEMS switch which stably operates at low voltage and its fabrication method are provided. The switch comprises: a first anchor 7-2-1 formed over a substrate 3; a first spring 7-3-1 connected to the first anchor; an upper electrode 7-1 which is connected to the first spring and makes a motion above the substrate, elastically deforming the first spring; a lower electrode 1 formed over the substrate, positioned under the upper electrode; a second spring 7-3-2 connected to the upper electrode; and a second anchor 7-2-2 connected to the second spring. When voltage is applied to between the upper electrode and the lower electrode and the upper electrode makes a downward motion, the second anchor is brought into contact with the substrate. As a result, the second spring is elastically deformed. When the upper electrode is subsequently brought into contact with the lower electrode, thereby the upper electrode and the lower electrode are electrically connected with each other. The first and second anchors, first and second springs, and upper electrode are formed of identical metal in integral structure to constitute a membrane 7.
摘要翻译：提供了一种在低电压下稳定工作的便宜的MEMS开关及其制造方法。开关包括：形成在衬底3上的第一锚固件7-2-1; 连接到第一锚的第一弹簧7-3-1; 连接到第一弹簧并在衬底上方运动的上电极7-1弹性变形第一弹簧; 形成在所述基板上的位于所述上电极下方的下电极1; 连接到上电极的第二弹簧7-3-2; 以及连接到第二弹簧的第二锚固件7-2-2。当电压施加到上电极和下电极之间并且上电极向下运动时，第二锚与衬底接触。结果，第二弹簧弹性变形。当上电极随后与下电极接触时，上电极和下电极彼此电连接。第一和第二锚固件，第一和第二弹簧以及上部电极由整体结构相同的金属形成以构成膜7。

18. 发明授权

US08102102B2 Thin film tuning-fork type inflection resonator and electric signal processing element 失效
标题翻译：薄膜音叉型变形谐振器和电信号处理元件
公开(公告)号：US08102102B2
公开(公告)日：2012-01-24
申请号：US13036318
申请日：2011-02-28
申请人： Atsushi Isobe , Nobuhiko Shibagaki , Kengo Asai , Hisanori Matsumoto
发明人： Atsushi Isobe , Nobuhiko Shibagaki , Kengo Asai , Hisanori Matsumoto
IPC分类号： H03H9/19
CPC分类号： H03H9/21 , H03H2003/026
摘要： A compact resonator has a wide bandwidth and a small variation of the specific vibration frequency. The resonator is a thin film tuning-fork type inflection resonator in which a thin film made of a piezoelectric material is formed on a substrate on which a lower electrode is formed, and an upper electrode is formed on the piezoelectric thin film.
摘要翻译：紧凑型谐振器具有宽带宽和特定振动频率的小变化。谐振器是薄膜音叉式拐点共振器，其中在其上形成有下电极的基板上形成由压电材料制成的薄膜，并且在压电薄膜上形成上电极。

19. 发明申请

US20110181154A1 Thin film piezoelectric vibrator, thin film piezoelectric bulk acoustic wave resonator, and radio-frequency filter using such resonator 有权
公开(公告)号：US20110181154A1
公开(公告)日：2011-07-28
申请号：US13064564
申请日：2011-03-31
申请人： Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
发明人： Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
IPC分类号： H01L41/04 , H01L41/08
CPC分类号： H03H9/172 , H03H3/02 , H03H9/564 , H03H9/568 , H03H2003/021 , H03H2009/241
摘要： A thin film piezoelectric bulk acoustic wave resonator has a multilayer structure including a piezoelectric thin film, a first metal electrode film, and a second metal electrode film. At least a part of the piezoelectric thin film is interposed between the first and second metal electrodes. A resonance part and a connection part are formed on an insulating substrate as films by a thin film forming apparatus. The resonance part vibrates in radial extension mode with a center of the piezoelectric thin film used as a node, the piezoelectric thin film of two resonance parts is polarized in a direction perpendicular to a film surface, and a width of the connection part is one-fourth or less of a width of two resonance parts.

20. 发明授权

US07986075B2 Film bulk acoustic wave resonator, its fabrication method and film bulk acoustic wave resonator filter using the resonator 失效
标题翻译：薄膜体声波谐振器，其制造方法和使用谐振器的薄膜体声波谐振器滤波器
公开(公告)号：US07986075B2
公开(公告)日：2011-07-26
申请号：US12292448
申请日：2008-11-19
申请人： Kengo Asai , Hisanori Matsumoto , Atsushi Isobe
发明人： Kengo Asai , Hisanori Matsumoto , Atsushi Isobe
IPC分类号： H01L41/08
CPC分类号： H03H9/173 , H03H3/02 , H03H9/0514 , H03H9/132 , H03H9/172 , H03H2003/021 , Y10T29/42
摘要： The film bulk acoustic wave resonator includes a laminate structure composed of a piezoelectric layer, and first and second electrode layers interposing at least part of the piezoelectric layer, in which the first metal electrode is dispersively formed on an electrode plane facing the second metal electrode, and a gap is formed in a substrate correspondingly to the laminate-structured resonance part. Except for an area of a wire electrode electrically connected to the first electrode layer and an area of a wire electrode electrically connected to the second electrode layer, the piezoelectric layer, first electrode layer and second electrode layer do not come in contact with the insulating substrate but are supported on a hollow. Also, a prop is formed in the gap to support the laminate structure.
摘要翻译：薄膜体声波谐振器包括由压电层构成的叠层结构，以及插入至少部分压电层的第一和第二电极层，其中第一金属电极分散地形成在面向第二金属电极的电极平面上，并且与层叠结构的共振部相对应地在基板上形成间隙。除了电连接到第一电极层的线电极的区域和与第二电极层电连接的线电极的区域之外，压电层，第一电极层和第二电极层不与绝缘衬底接触但是在一个空心处被支撑。此外，在间隙中形成支撑以支撑层压结构。

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