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51. 发明申请

US20080008438A1 Self-Coated Single Crystal, And Production Apparatus And Process Therefor 审中-公开
标题翻译：自涂单晶及其生产设备及其工艺
公开(公告)号：US20080008438A1
公开(公告)日：2008-01-10
申请号：US11547779
申请日：2005-04-11
申请人： Tsuguo Fukuda , Akira Yoshikawa , Yuji Kagamitani
发明人： Tsuguo Fukuda , Akira Yoshikawa , Yuji Kagamitani
IPC分类号： G02B6/00 , C30B15/08 , C30B15/10
CPC分类号： C30B29/62 , C30B15/08 , C30B29/12 , C30B29/20 , C30B29/28 , C30B29/30 , C30B29/34 , Y10T117/1032
摘要： It is an object of the present invention to provide a self-coated single crystal that without any special step conducted after crystal growth, has its circumference coated with a layer of different properties. A self-coated single crystal according to the present invention is characterized in that in operations comprising melting crystal materials for a core and a clad in a single crucible and carrying out growth of a single crystal through a pulling up method or a pulling down method, a grown single crystal in an as-growth condition has its circumference self-coated with a clad whose refractive index is lower than that of the core.
摘要翻译：本发明的目的是提供一种自体涂覆的单晶，其在晶体生长后不进行任何特殊步骤，其周长涂覆有不同性质的层。根据本发明的自包覆单晶的特征在于，在包括将单个坩埚中的芯和包层的晶体材料熔融并通过拉拔法或拉拔法进行单晶的生长的操作中，在生长条件下生长的单晶的周长自身涂覆有折射率低于芯的包层。

52. 发明申请

US20050188918A1 Device for the production of crystal rods having a defined cross-section and column-shaped polycrystallization structure by means of floating-zone continuous crystallization 有权
标题翻译：用于通过浮区连续结晶生产具有限定横截面和柱状多结晶结构的晶棒的装置
公开(公告)号：US20050188918A1
公开(公告)日：2005-09-01
申请号：US10513320
申请日：2003-05-06
申请人： Nikolai Abrosimov , Helge Riemann
发明人： Nikolai Abrosimov , Helge Riemann
IPC分类号： B22D11/00 , B22D11/01 , C01B33/02 , C30B13/00 , C30B13/20 , C30B15/00 , C30B15/08 , H01L21/208 , C30B1/00
CPC分类号： C30B13/20 , C30B15/08 , C30B29/06 , Y10T117/10 , Y10T117/1052 , Y10T117/1056
摘要： The invention relates to a device for the production of crystal rods having a defined cross-section and a column-shaped polycrystalline structure by means of floating-zone continuous crystallization, comprising at least one crucible filled with crystalline material, provided with a central deviation for transporting the contents of the crucible to a growing crystal rod arranged below the crucible, whereby the central deviation plunges into the melt meniscus, also comprising means for continuously adjustable provision of crystalline material to the crucible, and means for simultaneously feeding the melt energy and adjusting the crystallization front. In order to produce crystal rods having a defined diameter and a column-shaped polycrystalline structure using heating means which are technically less complex, while at the same time guaranteeing high crystallization rates and stable phase definition, the means for simultaneously feeding the melt energy and adjusting the crystallization front on the growing crystal rod (8) is a flat induction coil (5) which has an opening, said induction coil (5) being arranged at a distance from the crucible (4) and/or being vertically moveable in relation to the crystallization front.
摘要翻译：本发明涉及一种用于通过浮区连续结晶生产具有限定横截面的晶棒和柱状多晶结构的装置，包括至少一个填充有结晶材料的坩埚，该坩埚具有中心偏差将坩埚的内容物输送到布置在坩埚下方的生长晶体杆上，由此中心偏离进入熔体弯月面，还包括用于连续调节地向坩埚提供结晶材料的装置，以及用于同时进料熔体能量和调节结晶前沿。为了制造具有规定直径的晶棒和使用技术上较不复杂的加热装置的柱状多晶结构，同时保证高结晶速率和稳定的相位定义，同时供给熔体能量并调节生长晶棒（8）上的结晶前沿是具有开口的平坦感应线圈（5），所述感应线圈（5）布置在与坩埚（4）相距一定距离处和/或可相对于结晶前沿。

53. 发明授权

US5492079A Process for producing rods or blocks of semiconductor material and an apparatus for carrying out the process 失效
标题翻译：用于制造半导体材料的棒或块的方法和用于执行该过程的装置
公开(公告)号：US5492079A
公开(公告)日：1996-02-20
申请号：US270433
申请日：1994-07-05
申请人： Joachim Geissler , Ulrich Angres
发明人： Joachim Geissler , Ulrich Angres
IPC分类号： C30B15/00 , C30B15/08 , C30B15/14 , C30B28/04 , H01L21/208
CPC分类号： C30B15/08 , C30B15/14 , Y10S117/91
摘要： The process includes processing a molten phase of semiconductor material ering a solid phase of the material and having a free surface opposite this solid phase, into which, during the crystallization procedure, energy is radiated and material is fed in in granular form, which material floats and is melted. As a result, at the opposite solid/liquid interface, material grows on the solid phase which is drawn downwards in accordance with the growth rate. The process allows mono- or polycrystalline rods or blocks to be obtained. The main advantages of the process are that it can be carried out without melting vessels, it is possible to use granular material, and the energy balance is favorable because of the small amounts of melt.
摘要翻译：该方法包括处理覆盖材料的固相的半导体材料的熔融相，并且具有与该固相相反的自由表面，在结晶过程期间，能量被辐射并且材料以颗粒形式进料，该材料浮动并融化。结果，在相对的固/液界面处，材料在固相上生长，其根据生长速率被向下拉。该方法允许获得单晶或多晶棒或块。该方法的主要优点是可以在没有熔体的情况下进行，可以使用颗粒状材料，并且由于少量的熔体，能量平衡是有利的。

54. 发明授权

US4834832A Process and apparatus for the manufacture of silicon rods 失效
标题翻译：用于制造硅棒的工艺和设备
公开(公告)号：US4834832A
公开(公告)日：1989-05-30
申请号：US896501
申请日：1986-08-15
申请人： Horst Stock , Lothar Huber , Georg Priewasser
发明人： Horst Stock , Lothar Huber , Georg Priewasser
IPC分类号： C30B29/06 , C30B11/00 , C30B15/00 , C30B15/02 , C30B15/08 , H01L21/18 , H01L21/208
CPC分类号： C30B29/605 , C30B11/002 , C30B15/08 , Y10S117/90 , Y10S117/91 , Y10T117/1008 , Y10T117/1036 , Y10T117/1044 , Y10T117/1056 , Y10T117/1068
摘要： A process and apparatus for the manufacture of silicon rods having a colur structure comprising monocrystalline crystal zones with a crystallographic preferred orientation. Molten silicon is transferred from a silicon reservoir into a crystallization chamber which is formed by rollers arranged in a leak-proof manner in the shape of the desired rod cross-section. There the silicon first forms a stable outer shell of solidified material and, while it continues to crystallize, it is withdrawn at the bottom and released by the rollers. Owing to the short period of contact with a vessel wall a silicon rod is obtained that is particularly free of impurites.
摘要翻译：一种用于制造具有柱状结构的硅棒的方法和装置，其包括具有晶体优选取向的单晶晶体区。熔融硅从硅储存器转移到结晶室中，该结晶室由以防漏方式布置成所需棒状横截面形状的辊形成。在那里，硅首先形成稳定的固化外壳，并且当其继续结晶时，其在底部被抽出并由辊释放。由于与容器壁接触的时间短，所以获得了特别没有杂质的硅棒。

55. 发明授权

US4824519A Method and apparatus for single crystal pulling downwardly from the lower surface of a floating melt 失效
标题翻译：用于单晶从浮动熔体的下表面向下拉的方法和装置
公开(公告)号：US4824519A
公开(公告)日：1989-04-25
申请号：US112499
申请日：1987-10-22
申请人： Aleksandar G. Ostrogorsky
发明人： Aleksandar G. Ostrogorsky
IPC分类号： C30B15/00 , C30B15/08 , C30B35/00
CPC分类号： C30B15/08 , C30B29/40 , Y10S117/90 , Y10S117/907 , Y10S117/91 , Y10T117/1008 , Y10T117/1032 , Y10T117/106 , Y10T117/1068 , Y10T117/1072
摘要： An elemental or compound melt is floated on a denser encapsulent. The melt has two horizontal free surfaces (i.e., surfaces not in contact with a solid). A shaft including a seed crystal extends upwardly through the encapsulent to contact the lower free surface of the melt and then is withdrawn downwardly through the encapsulent to grow the crystal. During solidification mechanical stresses are not imposed on the crystal. The melt is heated from above so that the lower melt surface is colder than the upper melt surface which provides a strong stabilizing temperature gradient within the melt. Unsteady natural convective flows in the melt are eliminated. Steady natural convection is substantially decreased compared to the Czochralski process (CZ) and Liquid Encapsulated Czochralski process (LEC). The stoichiometric ratio in the melt is maintained by controlling the pressure of the volatile element over the upper free surface of the melt.
摘要翻译：元素或化合物熔体漂浮在更密封的密封剂上。熔体具有两个水平的自由表面（即，与固体不接触的表面）。包括晶种的轴向上延伸穿过密封件以接触熔体的下部自由表面，然后通过密封件向下抽出以使晶体生长。在凝固期间，不会对晶体施加机械应力。熔体从上方被加热，使得下部熔体表面比上部熔体表面更冷，这在熔体内提供了强烈的稳定温度梯度。消除了熔体中不稳定的自然对流。与Czochralski工艺（CZ）和液体封装Czochralski工艺（LEC）相比，稳定的自然对流显着降低。通过控制挥发性元素在熔体的上自由表面上的压力来维持熔体中的化学计量比。

56. 发明授权

US4565600A Processes for the continuous preparation of single crystals 失效
标题翻译：连续制备单晶的方法
公开(公告)号：US4565600A
公开(公告)日：1986-01-21
申请号：US492368
申请日：1983-05-11
申请人： Jean Ricard
发明人： Jean Ricard
IPC分类号： C30B15/08 , C30B15/34
CPC分类号： C30B29/20 , C30B15/08 , Y10S117/91
摘要： Processes for the continuous preparation of single crystals having a predetermined shape and requiring little or no subsequent machining which processes comprise placing a single crystal-forming material in a crucible fitted in its lower portion with a capillary conduit having a length equal to or greater than the retention length of the molten material in the capillary at the selected temperature and pressure, heating the crystal-forming material to a temperature above its melting point, bringing a performed appropriately oriented crystal seed into contact with the pendant drop formed at the lower point of the capillary, and pulling the seed crystal away from the feed material in the crucible so that the amount of crystal-forming material fed per unit of time is at every instant substantially equal to the quantity of material pulled into single crystal form, together with novel apparatus comprising a capillary-containing crucible, heating means, feed means, enclosure, seed-supporting carrier, means for moving and rotating the carrier, and means for controlling the movement of the carrier.
摘要翻译：用于连续制备具有预定形状并且几乎不需要后续加工的单晶的方法，该方法包括将单晶形成材料放置在装配在其下部的坩埚中，毛细导管的长度等于或大于在选择的温度和压力下熔融材料在毛细管中的保留长度，将晶体形成材料加热到高于其熔点的温度，使得所执行的适当取向的晶种与形成在毛细管，并将晶种从坩埚中的进料中拉出，使得每单位时间供给的结晶形成材料的量基本上等于被拉入单晶形式的材料的数量，以及新颖的装置包括含毛细管的坩埚，加热装置，进料装置，外壳，种子支撑载体，用于移动和旋转载体的装置，以及用于控制载体的运动的装置。

57. 发明授权

US4419177A Process for electromagnetically casting or reforming strip materials 失效
标题翻译：用于电磁铸造或重整带材的方法
公开(公告)号：US4419177A
公开(公告)日：1983-12-06
申请号：US191630
申请日：1980-09-29
申请人： Michael J. Pryor , Derek E. Tyler , John C. Yarwood
发明人： Michael J. Pryor , Derek E. Tyler , John C. Yarwood
IPC分类号： B22D11/04 , B22D11/01 , C30B11/00 , C30B13/00 , C30B15/00 , C30B15/08 , B22D11/16 , B22D27/02
CPC分类号： C30B15/08 , B22D11/015 , C30B11/001 , C30B13/00 , C30B15/00 , C30B29/60
摘要： A process for electromagnetically containing and forming molten material into a desired thin strip shape. At least two inductors are employed which are powered at respectively different frequencies. The frequency of the current applied to the upstream inductor is substantially lower than the frequency applied to the downstream inductor thereby providing improved efficiency and reduced power consumption.
摘要翻译：一种用于将熔融材料电磁地容纳并形成所需薄带形状的方法。使用至少两个分别以不同频率供电的电感器。施加到上游电感器的电流的频率基本上低于施加到下游电感器的频率，从而提供改进的效率和降低的功率消耗。

58. 发明授权

US4373571A Apparatus and process for electromagnetically shaping a molten material within a narrow containment zone 失效
标题翻译：用于在狭窄的容纳区域内对熔融材料进行电磁成形的装置和工艺
公开(公告)号：US4373571A
公开(公告)日：1983-02-15
申请号：US257442
申请日：1981-04-24
申请人： John C. Yarwood , Gerhart K. Gaule , Gary L. Ungarean
发明人： John C. Yarwood , Gerhart K. Gaule , Gary L. Ungarean
IPC分类号： B22D11/01 , C30B15/00 , C30B15/08 , C30B15/14 , B22D27/02
CPC分类号： C30B15/14 , B22D11/015 , C30B15/00 , C30B15/08 , C30B29/60
摘要： An apparatus and process is provided for electromagnetically forming a material into a desired thin strip shape. The apparatus and process includes a first portion containing a sump of said material in molten form. A second portion is located downstream of and communicates with the first portion. The second portion defines a containment zone of 5 mm or less for electromagnetically shaping the molten material into the thin strip shape whereby efficiency is improved through reduction of power consumption.
摘要翻译：提供了一种用于将材料电磁地形成为期望的薄条形状的装置和工艺。该装置和方法包括含有熔融形式的所述材料的贮槽的第一部分。第二部分位于第一部分的下游并与第一部分连通。第二部分限定了5mm以下的容纳区域，用于将熔融材料电磁成形为薄带状，从而通过降低功耗来提高效率。

59. 发明授权

US3658598A Method of crucible-free zone melting crystalline rods, especially of semiconductor material 失效
标题翻译：无结晶区熔体晶体管的方法，特别是半导体材料
公开(公告)号：US3658598A
公开(公告)日：1972-04-25
申请号：US3658598D
申请日：1969-08-19
申请人： SIEMENS AG
发明人： KELLER WOLFGANG , BERGER GUNTHER
IPC分类号： C30B13/28 , C30B13/30 , C30B13/32 , C30B15/08 , B01J17/02 , B01D9/00
CPC分类号： C30B13/30 , C30B13/28 , C30B13/32 , C30B15/08 , Y10S117/901 , Y10S117/91 , Y10S117/911 , Y10S117/912 , Y10S117/917 , Y10T117/1072
摘要： Method of zone melting a semiconductor rod includes displacing an end holder of the vertically held rod transversely to the rod axis, continuously displacing the other end holder vertically so as to feed a rod portion, having a diameter greater than the inner diameter of an annular heating device surrounding the rod and forming a melting zone therein, into the melting zone, forming a diametrical constriction in the melting zone, displacing the one end holder vertically and rotating it until the rod portion located between it and the melting zone is formed to a specific diameter larger than the inner diameter of the heating device and, after forming the rod portion to the specific cross section, vertically displacing the end holders elative to the heating device.
摘要翻译：对半导体棒进行区域熔化的方法包括将垂直保持的杆的端部保持器横向于杆的轴线移动，使另一端部托架垂直地移动，以便进给杆部分，其直径大于环形加热的内径围绕杆并在其中形成熔化区的装置进入熔化区，在熔化区中形成直径收缩，垂直移动一端支架并使其旋转，直到位于其与熔化区之间的杆部分形成为特定的直径大于加热装置的内径，并且在将杆部分形成到特定横截面之后，将端部保持器垂直移位到加热装置。

60. 发明授权

US3607109A Method and means of producing a large diameter single-crystal rod from a polycrystal bar 失效
标题翻译：从多晶棒生产大直径单晶层的方法和手段
公开(公告)号：US3607109A
公开(公告)日：1971-09-21
申请号：US3607109D
申请日：1968-01-09
申请人： CAPITA EMIL R
发明人： CAPITA EMIL R
IPC分类号： C30B15/02 , C30B15/08 , B01J17/10
CPC分类号： C30B15/02 , C30B15/08 , Y10S148/041 , Y10S148/107 , Y10T117/1056 , Y10T117/1068 , Y10T117/1088
摘要： A method and means for producing a large diameter monocrystalline or single-crystal rod of semiconducting material from a polycrystalline bar comprising the supporting of the bar at an angle with the vertical and the heating of the lower end to a molten state by means of a high-frequency induction coil disposed thereabout. The rod may be formed by passing a monocrystalline seed through a space in the induction coil to contact the molten end of the bar forming a fused junction and retracting the seed downwardly while rotating it to draw the molten bar material between the coils out of the heated area to form a recrystallized rod. An additional heating coil may be positioned beneath the angularly disposed bar and heating coil to provide a slow and controlled heat recession during the solidification of the rod and the rod may be gas-doped by introducing the gas into the area of the molten zone.

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