专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US09425023B2 Ion generator and thermal electron emitter 有权
标题翻译：离子发生器和热电子发射器
公开(公告)号：US09425023B2
公开(公告)日：2016-08-23
申请号：US14721808
申请日：2015-05-26
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Masateru Sato
IPC分类号： H01J37/08 , H01J37/06
CPC分类号： H01J37/06 , H01J27/08 , H01J37/08 , H01J2237/082
摘要： An ion generator includes an arc chamber, a cathode that extends outward from the inside of the arc chamber in an axial direction and that emits a thermal electron into the arc chamber, a thermal reflector with a cylindrical shape provided around the cathode in a radial direction and extending in the axial direction, and a narrow structure configured to narrow a width in the radial direction of a gap between the cathode and the thermal reflector at a given position in the axial direction.
摘要翻译：离子发生器包括电弧室，阴极，其沿着轴向从电弧室的内部向外延伸并且向电弧室发射热电子;沿半径方向设置在阴极周围的具有圆筒形的热反射器并且在轴向方向上延伸，窄结构构造成在轴向的给定位置处使阴极和热反射器之间的间隙的径向宽度变窄。

72. 发明授权

US09390889B2 Ion implanter and method of ion beam tuning 有权
标题翻译：离子注入机和离子束调谐方法
公开(公告)号：US09390889B2
公开(公告)日：2016-07-12
申请号：US14852037
申请日：2015-09-11
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Kazuhiro Watanabe , Yuuji Takahashi , Yusuke Ueno
IPC分类号： H01J37/304 , H01J37/317 , H01J37/244
CPC分类号： H01J37/304 , H01J37/05 , H01J37/244 , H01J37/3171 , H01J2237/055 , H01J2237/24514
摘要： An energy analysis slit of an ion implanter is configured to enable switching between a standard slit opening used for implantation processing performed under a predetermined implantation condition and a high-precision slit opening having higher energy precision than the standard slit opening and used to tune an acceleration parameter for a radio frequency linear accelerator. The acceleration parameter is determined for the predetermined implantation condition so that at least a part of ions supplied to the radio frequency linear accelerator is accelerated to have target energy, and so that the beam current amount measured by a beam measurement unit is equivalent to a target beam current amount.
摘要翻译：离子注入机的能量分析狭缝被配置为能够在用于在预定注入条件下执行的注入处理的标准狭缝开口与具有比标准狭缝开口更高能量精度的高精度狭缝开口之间进行切换，并用于调节加速度射频线性加速器的参数。对于预定的注入条件确定加速度参数，使得提供给射频线性加速器的离子的至少一部分被加速以具有目标能量，并且由光束测量单元测量的束电流量等于目标光束电流量。

73. 发明授权

US09379030B2 Ion implantation method and ion implantation apparatus 有权
标题翻译：离子注入法和离子注入装置
公开(公告)号：US09379030B2
公开(公告)日：2016-06-28
申请号：US14013862
申请日：2013-08-29
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Shiro Ninomiya , Tadanobu Kagawa , Toshio Yumiyama , Akira Funai , Takashi Kuroda
IPC分类号： H01L21/66 , H01J37/08 , C23C14/48 , H01J37/304 , H01J37/317
CPC分类号： H01L22/14 , C23C14/48 , H01J37/304 , H01J37/3171 , H01J2237/0206
摘要： Provided is an ion implantation method of transporting ions generated by an ion source to a wafer and implanting the ions into the wafer by irradiating an ion beam on the wafer, including, during the ion implantation into the wafer, using a plurality of detection units which can detect an event having a possibility of discharge and determining a state of the ion beam based on existence of detected event having a possibility of discharge and a degree of influence of the event on the ion beam.
摘要翻译：提供了一种将由离子源产生的离子输送到晶片并且通过在晶片上照射离子束将离子注入晶片的离子注入方法，包括在离子注入晶片期间使用多个检测单元，可以基于具有放电可能性的检测事件的存在和事件对离子束的影响程度来检测具有放电可能性的事件和确定离子束的状态。

74. 发明授权

US09373481B2 High-energy ion implanter, beam collimator, and beam collimation method 有权
标题翻译：高能离子注入机，光束准直仪和光束准直方法
公开(公告)号：US09373481B2
公开(公告)日：2016-06-21
申请号：US14618630
申请日：2015-02-10
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Kouji Kato , Yoshitaka Amamo
IPC分类号： H01J37/05 , H01J37/09 , H01J37/317 , H01J37/12
CPC分类号： H01J37/3171 , H01J37/12 , H01J2237/024 , H01J2237/032 , H01J2237/121 , H01J2237/16
摘要： A beam collimator includes a plurality of lens units that are arranged along a reference trajectory so that a beam collimated to the reference trajectory comes out from an exit of the beam collimator. Each of the plurality of lens units forms a bow-shaped curved gap and is formed such that an angle of a beam traveling direction with respect to the reference trajectory is changed by an electric field generated in the bow-shaped curved gap. A vacant space is provided between one lens unit of the plurality of lens units and a lens unit that is adjacent to the lens unit. The vacant space is directed in a transverse direction of the collimated beam in a cross section that is perpendicular to the reference trajectory. An inner field containing the reference trajectory is connected to an outer field of the plurality of lens units through the vacant space.
摘要翻译：光束准直仪包括沿着参考轨迹布置的多个透镜单元，使得准直到参考轨迹的光束从光束准直仪的出口出来。多个透镜单元中的每一个形成弓形弯曲间隙，并且形成为使得相对于基准轨迹的光束移动方向的角度由弓形弯曲间隙中产生的电场改变。在多个透镜单元的一个透镜单元和与透镜单元相邻的透镜单元之间设置有空白空间。在垂直于参考轨迹的横截面中，空白空间被引导在准直光束的横向方向上。包含参考轨迹的内部场通过空置空间连接到多个透镜单元的外部场。

75. 发明授权

US09343263B2 Ion implanter, beam energy measuring device, and method of measuring beam energy 有权
标题翻译：离子注入机，光束能量测量装置和测量光束能量的方法
公开(公告)号：US09343263B2
公开(公告)日：2016-05-17
申请号：US14656132
申请日：2015-03-12
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Haruka Sasaki , Kazuhiro Watanabe , Hiroyuki Kariya
IPC分类号： H01J37/00 , H01J37/244 , H01J37/317
CPC分类号： H01J37/244 , H01J37/3171 , H01J2237/057 , H01J2237/24514 , H01J2237/24528 , H01J2237/31703
摘要： A beam energy measuring device in an ion implanter includes a parallelism measuring unit that measures a parallelism of an ion beam at a downstream of a beam collimator of the ion implanter and an energy calculating unit that calculates an energy of the ion beam from the measured parallelism. The ion implanter may further include a control unit that controls a high energy multistage linear acceleration unit based on the measured energy of the ion beam so that the ion beam has a target energy.
摘要翻译：离子注入机中的光束能量测量装置包括平行度测量单元，其测量在离子注入机的光束准直器的下游处的离子束的平行度，以及能量计算单元，其计算来自所测量的平行度的离子束的能量。离子注入机还可以包括控制单元，其基于所测量的离子束的能量来控制高能量多级线性加速单元，使得离子束具有目标能量。

76. 发明申请

US20160111250A1 BEAM EXTRACTION SLIT STRUCTURE AND ION SOURCE 有权
标题翻译：梁提取液态结构和离子源
公开(公告)号：US20160111250A1
公开(公告)日：2016-04-21
申请号：US14885586
申请日：2015-10-16
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Masateru Sato
IPC分类号： H01J37/30 , H01J27/14 , H01J37/317 , G21K1/00
CPC分类号： H01J37/3171 , H01J37/08 , H01J2237/083
摘要： A beam extraction slit structure includes a plasma chamber interior surface that is, in operation, in contact with a plasma; a plasma chamber exterior surface that faces an extraction electrode; and a slit surface part that forms a beam extraction slit between the plasma chamber interior surface and the plasma chamber exterior surface in the beam extraction direction. The slit surface part includes a plasma meniscus fixing part formed in an area of relatively higher plasma density in the slit longitudinal direction to fixingly maintain a plasma meniscus of the plasma and a plasma meniscus non-fixing part formed in an area of relatively lower plasma density in the slit longitudinal direction to movably maintain the plasma meniscus of the plasma in the beam extraction direction.
摘要翻译：光束提取狭缝结构包括在操作中与等离子体接触的等离子体室内表面; 面向引出电极的等离子体室外表面; 以及狭缝表面部，其在所述等离子体室内表面和所述等离子体室外表面之间沿所述光束提取方向形成光束提取狭缝。狭缝表面部分包括形成在狭缝纵向方向上具有相对较高等离子体密度的区域中的等离子体弯液面固定部分，以固定地维持等离子体的等离子体弯月面和形成在相对较低等离子体密度的区域中的等离子体弯液面非固定部分在狭缝纵向方向上可移动地保持等离子体的等离子体的光束提取方向。

77. 发明授权

US09293295B2 Ion implantation apparatus, final energy filter, and ion implantation method 有权
标题翻译：离子注入装置，最终能量过滤器和离子注入方法
公开(公告)号：US09293295B2
公开(公告)日：2016-03-22
申请号：US14670173
申请日：2015-03-26
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Takanori Yagita
IPC分类号： H01J37/317 , H01J37/147 , H01J37/05 , H01J37/30
CPC分类号： H01J37/147 , H01J37/05 , H01J37/3007 , H01J37/3171 , H01J2237/057
摘要： A final energy filter includes a first adjustment electrode portion, an intermediate electrode portion, and a second adjustment electrode portion. The final energy filter further includes a power supply unit. The power supply unit is configured such that it applies the voltages separately to the first adjustment electrode portion, the intermediate electrode portion, and the second adjustment electrode portion. The power supply unit applies voltages to an upstream auxiliary electrode portion, a deflection electrode portion and a downstream auxiliary electrode portion, respectively, such that the energy range of ion beam in a first region between the upstream auxiliary electrode portion and the deflection electrode portion is approximately equal to that in a second region between the deflection electrode portion and the downstream auxiliary electrode portion.
摘要翻译：最终能量过滤器包括第一调整电极部分，中间电极部分和第二调节电极部分。最终能量过滤器还包括电源单元。电源单元被构造成使得其分别施加电压到第一调整电极部分，中间电极部分和第二调节电极部分。电源单元分别向上游辅助电极部分，偏转电极部分和下游辅助电极部分施加电压，使得上游辅助电极部分和偏转电极部分之间的第一区域中的离子束的能量范围为大致等于偏转电极部分和下游辅助电极部分之间的第二区域中的位置。

78. 发明申请

US20160013014A1 ION IMPLANTER AND METHOD OF CONTROLLING THE SAME 有权
标题翻译：离子植入物及其控制方法
公开(公告)号：US20160013014A1
公开(公告)日：2016-01-14
申请号：US14793265
申请日：2015-07-07
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Tadanobu Kagawa , Toshio Yumiyama , Takeshi Kurose
IPC分类号： H01J37/24 , H01J37/08 , H01J37/147 , H01J37/317 , H01J37/10
CPC分类号： H01J37/241 , H01J37/3171
摘要： An ion implanter includes a high-voltage power supply, a control unit that generates a command signal controlling an output voltage of the high-voltage power supply, an electrode unit to which the output voltage is applied, and a measurement unit that measures an actual voltage applied to the electrode unit. The control unit includes a first generation section that generates a first command signal for allowing the high-voltage power supply to output a target voltage, a second generation section that generates a second command signal for complementing the first command signal so that the actual voltage measured by the measurement unit becomes or close to the target voltage, and a command section that brings to the high-voltage power supply a synthetics command signal which is produced by synthesizing the first command signal and the second command signal.
摘要翻译：离子注入机包括高压电源，产生控制高电压电源的输出电压的指令信号的控制单元，施加输出电压的电极单元和测量实际的测量单元施加到电极单元的电压。控制单元包括：第一生成部，其生成用于使高压电源输出目标电压的第一指令信号;第二生成部，生成用于补充第一指令信号的第二指令信号，使得测量的实际电压通过测量单元变得或接近目标电压，以及命令部分，其通过合成第一命令信号和第二命令信号而产生合成命令信号给高压电源。

79. 发明申请

US20150371822A1 ION IMPLANTATION APPARATUS 有权
标题翻译：离子植入装置
公开(公告)号：US20150371822A1
公开(公告)日：2015-12-24
申请号：US14746277
申请日：2015-06-22
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Yoshitaka Amano
IPC分类号： H01J37/317 , H01J37/244 , H01J37/10
CPC分类号： H01J37/3171 , H01J37/10 , H01J37/244 , H01J2237/038 , H01J2237/1202 , H01J2237/16
摘要： An ion implantation apparatus includes: a lens electrode unit including a plurality of electrode sections for parallelizing an ion beam; and a vacuum unit that houses the lens electrode unit in a vacuum environment. The vacuum unit includes: a first vacuum container having a first conductive container wall; a second vacuum container having a second conductive container wall; and an insulating container wall that allows the first vacuum container and the second vacuum container to communicate with each other and that insulates the first conductive container wall from the second conductive container wall. An insulating member is provided that insulates at least one electrode section of the lens electrode unit from at least one of the first conductive container wall and the second conductive container wall, and the insulating member is housed in the vacuum environment together with the lens electrode unit.
摘要翻译：离子注入装置包括：透镜电极单元，包括用于使离子束平行化的多个电极部分; 以及在真空环境中容纳透镜电极单元的真空单元。真空单元包括：具有第一导电容器壁的第一真空容器; 具有第二导电容器壁的第二真空容器; 以及允许第一真空容器和第二真空容器彼此连通并使第一导电容器壁与第二导电容器壁绝缘的绝缘容器壁。提供了一种绝缘构件，其将透镜电极单元的至少一个电极部分与第一导电容器壁和第二导电容器壁中的至少一个绝缘，并且绝缘构件与透镜电极单元一起容纳在真空环境中。

80. 发明申请

US20230139482A1 ION IMPLANTER AND ION IMPLANTATION METHOD 有权
公开(公告)号：US20230139482A1
公开(公告)日：2023-05-04
申请号：US18087277
申请日：2022-12-22
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Hiroshi Matsushita
IPC分类号： H01J37/244 , H01J37/317 , G01T3/00 , H01J37/147
摘要： An ion implanter includes: a plurality of devices which are disposed along a beamline along which an ion beam is transported; a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure a neutron ray from a neutron ray source which is generated in the beamline due to collision of a high-energy ion beam; and a control device which monitors at least one of the plurality of devices, based on a plurality of measurement values measured by the plurality of neutron ray measuring instruments.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式