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71. 发明授权

US5132533A Method for forming probe and apparatus therefor 失效
标题翻译：形成探针及其装置的方法
公开(公告)号：US5132533A
公开(公告)日：1992-07-21
申请号：US621886
申请日：1990-12-05
申请人： Toshimitsu Kawase , Akihiko Yamano , Hiroyasu Nose , Toshihiko Miyazaki , Takahiro Oguchi , Ryo Kuroda
发明人： Toshimitsu Kawase , Akihiko Yamano , Hiroyasu Nose , Toshihiko Miyazaki , Takahiro Oguchi , Ryo Kuroda
IPC分类号： B82B3/00 , G01Q10/00 , G01Q30/04 , G01Q60/16 , G11B9/00
CPC分类号： G11B9/1409 , B82Y10/00 , B82Y30/00
摘要： A probe closely positioned to an information carrier in apparatus to effect information reading and/or input on the information carrier is formed by opposing an electrode to an end portion of the probe to be formed. The distance between probe end portion and the electrode is detected to control the position of the electrode with respect to the probe. A voltage is applied to the probe end portion through the electrode under positioning control to form the probe end portion. The probe end portion is formed and may be reformed to maintain reliable performance of the information reading and/or input apparatus.

72. 发明授权

US5129132A Method of making an integrated scanning tunneling microscope 失效
标题翻译：制作集成扫描隧道显微镜的方法
公开(公告)号：US5129132A
公开(公告)日：1992-07-14
申请号：US463108
申请日：1990-01-10
申请人： Mark Zdeblick , Thomas R. Albrecht
发明人： Mark Zdeblick , Thomas R. Albrecht
IPC分类号： G01B7/34 , B44C1/22 , G01N23/00 , G01N23/225 , G01N27/00 , G01N37/00 , G01Q10/06 , G01Q20/04 , G01Q30/04 , G01Q60/10 , G01Q60/16 , G01Q70/16 , G01Q80/00 , G11B9/00 , G11B9/04 , G11B9/14 , G11C13/00 , G11C13/04 , H01J37/20 , H01J37/28 , H01L41/09 , H01L41/22 , H02N2/00
CPC分类号： H01L41/0966 , B82Y35/00 , G01Q10/045 , G01Q60/16 , G11B9/14 , G11B9/1418 , G11B9/1436 , G11B9/1472 , H01J37/20 , H01L41/316 , B82Y10/00 , G01Q80/00 , Y10S977/837 , Y10S977/861 , Y10S977/872 , Y10S977/873 , Y10S977/943 , Y10S977/947 , Y10T29/42
摘要： An integrated scanning tunneling microscope and an integrated piezoelectric transducer and methods for making both. The device consists of one or two arm piezoelectric bimorph cantilevers formed by micromachining using standard integrated circuit processing steps. These cantilevers are attached to the substrate at one area and are free to move under the influence of piezoelectric forces which are caused by the application of appropriate voltages generated by control circuitry and applied to pairs of electrodes formed as an integral part of the bimorph cantilever structure. The electric fields caused by the control voltages cause the piezoelectric bimorphs to move in any desired fashion within ranges determined by the design. The bimorph cantilevers have tips with very sharp points formed thereon which are moved by the action of the control circuit and the piezoelectric bimorphs so to stay within a very small distance of a conducting surface. The movements of the tip can be tracked to yield an image of the surface at atomic resolution.
摘要翻译：集成扫描隧道显微镜和集成压电换能器及其制造方法。该器件由使用标准集成电路处理步骤的微加工形成的一个或两个臂压电双压电晶片悬臂组成。这些悬臂在一个区域附接到基板，并且在由施加由控制电路产生的适当电压引起的压电力的影响下自由移动并施加到形成为双压电晶片悬臂结构的组成部分的电极对。由控制电压引起的电场导致压电双晶片以任何期望的方式在由设计确定的范围内移动。双压电晶片悬臂具有形成在其上的非常锋利点的尖端，其通过控制电路和压电双压电晶片的作用移动以保持在导电表面的非常小的距离内。可以跟踪尖端的运动以在原子分辨率下产生表面的图像。

73. 发明授权

US5128545A Method and apparatus for background correction in analysis of a specimen surface 失效
标题翻译：用于样本表面分析的背景校正的方法和装置
公开(公告)号：US5128545A
公开(公告)日：1992-07-07
申请号：US680427
申请日：1991-04-04
申请人： Hideto Komi
发明人： Hideto Komi
IPC分类号： G01N23/22 , G01N23/225 , G01Q30/02 , G01Q30/04 , H01J37/256
CPC分类号： H01J37/256 , G01N23/2252
摘要： A method and apparatus for background correction of the measured data in analysis of a specimen surface by scanning the surface with an electron beam, wherein a signal occurring from an element to be analyzed contained in the specimen is detected to obtain a two-dimensional distribution data of the level of the signal in a predetermined area of the specimen surface; a specimen current induced in the specimen by the scanning is detected to obtain a two-dimensional distribution data of the specimen current in the predetermined specimen surface area; a relation between the background intensity and specimen current of the specimen is calculated from the background intensity and specimen current measured on at least two points in the specimen surface area; a two-dimensional distribution data of the background intensity is calculated from the two-dimensional distribution data of the specimen current by using the calculated relation; and the calculated two-dimensional distribution data of the background intensity is subtracted from the two-dimensional distribution data of the signal level thereby to make a background correction of the distribution data of the signal level.

74. 发明授权

US5065103A Scanning capacitance - voltage microscopy 失效
标题翻译：扫描电容 - 电压显微镜
公开(公告)号：US5065103A
公开(公告)日：1991-11-12
申请号：US499857
申请日：1990-03-27
申请人： James A. Slinkman , Hemantha K. Wickramasinghe , Clayton C. Williams
发明人： James A. Slinkman , Hemantha K. Wickramasinghe , Clayton C. Williams
IPC分类号： G01N27/22 , G01N27/24 , G01Q10/00 , G01Q30/04 , G01Q60/46 , H01L21/66
CPC分类号： G01Q60/46 , B82Y35/00 , G01N27/24
摘要： An apparatus and method for generating microscopic scan data of C-V and/or dC/dV over a scan area. A scanning microscope, for example a scanning force microscope, is provided with a voltage biased tip, for example, of tungsten, which is scanned across an area to derive the data. The data can be used to derive a plot of semiconductor dopant level across the scan area. Other material properties can be derived, for example, carrier generation and recombination rates and subsurface defects.

75. 发明授权

US5008537A Composite apparatus with secondary ion mass spectrometry instrument and scanning electron microscope 失效
标题翻译：具有二次离子质谱仪和扫描电子显微镜的复合装置
公开(公告)号：US5008537A
公开(公告)日：1991-04-16
申请号：US409761
申请日：1989-09-20
申请人： Hiroshi Toita , Hifumi Tamura , Issei Tobita , Hiroshi Iwamoto
发明人： Hiroshi Toita , Hifumi Tamura , Issei Tobita , Hiroshi Iwamoto
IPC分类号： H01J37/08 , G01Q10/00 , G01Q30/04 , G01Q30/14 , H01J27/26 , H01J37/147 , H01J37/252 , H01J37/256 , H01J49/26
CPC分类号： H01J27/26 , H01J37/256
摘要： A composite apparatus is disclosed which includes in combination a secondary ion mass spectrometry instrument and a scanning electron microscope. A liquid metal ion source and an ion source other than the liquid metal ion source are installed in the same apparatus so that an ion beam emitted from the liquid metal ion source and an ion beam emitted from the ion source other than the liquid metal ion source are aligned with each other on a primary beam axis which is an optical axis of an irradiating system. The liquid metal ion source is disposed in rear of a primary ion separating device which mass-separates the ion beam emitted from the ion source other than the liquid metal ion source. Further, an electron gun is installed in the same apparatus so that an electron beam emitted from the electron gun is aligned with the ion beam on the primary beam axis.
摘要翻译：公开了一种复合装置，其包括二次离子质谱仪和扫描电子显微镜。液体金属离子源和液体金属离子源以外的离子源安装在同一装置中，使得从液体金属离子源发射的离子束和离子源（液体金属离子源以外）发射的离子束在作为照射系统的光轴的主光束轴上彼此对准。液体金属离子源设置在主离子分离装置的后方，该离子分离装置对离子源发射的液体金属离子源以外的离子束进行质量分离。此外，电子枪安装在相同的装置中，使得从电子枪发射的电子束与主光束轴上的离子束对准。

76. 发明授权

US4982090A Method and apparatus for the quantitative, depth differential analysis of solid samples with the use of two ion beams 失效
标题翻译：使用两个离子束对固体样品进行定量深度差分分析的方法和装置
公开(公告)号：US4982090A
公开(公告)日：1991-01-01
申请号：US305693
申请日：1989-02-02
申请人： Klaus Wittmaack
发明人： Klaus Wittmaack
IPC分类号： G01N23/203 , G01Q30/04 , G01Q30/18 , H01J37/252
CPC分类号： G01N23/203
摘要： A method and an apparatus for the quantitative depth analysis of a solid sample by backscatter analyzing the sample with the light ions, removing a thin layer of the sample by sputter etching, using a beam of medium-mass or high-mass ions to bombard the sample, backscatter analyzing the sputter etched sample, and repeatedly performing the steps of removing a thin layer of the sample and backscatter analyzing the sputter etched sample. An apparatus for performing the method includes an analysis chamber for retaining the sample to be analyzed, and first and second accelerators. The first accelerator generates fast, light ions with an energy from about 0.1 MeV to about 5.0 MeV to be directed into the chamber onto a predetermined region of the sample at a first desired predetermined bombardment angle so that the fast ions are scattered by the ions of the sample. The second accelerator accelerates a beam of slow medium-mass or high-mass ions with an energy from about 0.5 to about 10.0 keV to be directed onto the predetermined region of the sample at a second desired predetermined bombardment angle. The analysis chamber has a sample manipulator for manipulating the sample and an analyzer for determining the energy of the fast ion scattered by the atoms of the sample.
摘要翻译：一种用于通过后向散射用轻离子分析样品进行定量深度分析的方法和装置，通过溅射蚀刻去除薄层的样品，使用中质量或高质量离子束来轰击样品样品，反向散射分析溅射蚀刻的样品，并且重复地执行去除样品的薄层和分析溅射蚀刻样品的反向散射的步骤。用于执行该方法的装置包括用于保持待分析样品的分析室以及第一和第二加速器。第一加速器以约0.1MeV至约5.0MeV的能量产生快速，轻质的离子，以第一期望的预定轰击角被引导到样品的预定区域上，使得快速离子被离子例子。第二加速器以约0.5至约10.0keV的能量加速缓慢介质质量或高质量离子束，以第二期望的预定轰击角度引导到样品的预定区域。分析室具有用于操纵样品的样品操纵器和用于确定由样品原子散射的快速离子的能量的分析器。

77. 发明授权

US4980639A Method and apparatus for testing integrated electronic device 失效
标题翻译：集成电子设备测试方法和装置
公开(公告)号：US4980639A
公开(公告)日：1990-12-25
申请号：US166763
申请日：1988-03-03
申请人： Masahiro Yoshizawa , Akira Kikuchi , Kou Wada , Minpei Fujinami , Nobuo Shimazu
发明人： Masahiro Yoshizawa , Akira Kikuchi , Kou Wada , Minpei Fujinami , Nobuo Shimazu
IPC分类号： G01Q30/02 , G01Q30/04 , G01Q80/00 , G01Q90/00 , G01R31/305
CPC分类号： G01R31/305
摘要： A method and apparatus for testing an integrated electronic device wherein the integrated electronic device to be tested is placed on a sample table. A predetermined position of the integrated electronic device is irradiated with the primary charged beam. A substrate current flowing through a substrate of the integrated electronic device is measured upon radiation of the primary charged beam, and then a potential of the predetermined position irradiated with the primary charged beam is nondestructively measured in accordance with secondary electrons emitted from the predetermined position. A function of the integrated electronic device is evaluated in accordance with the substrate current and the predetermined position potential. The function to be evaluated include leakage characteristics and a capacitance.
摘要翻译：一种用于测试集成电子设备的方法和装置，其中将要测试的集成电子设备放置在样品台上。用主充电光束照射集成电子设备的预定位置。通过一次充电光束的辐射测量流过集成电子器件的衬底的衬底电流，然后根据从预定位置发射的二次电子非破坏性地测量用主充电光束照射的预定位置的电位。根据衬底电流和预定位置电位来评估集成电子器件的功能。要评估的功能包括泄漏特性和电容。

78. 发明授权

US4902967A Scanning electron microscopy by photovoltage contrast imaging 失效
标题翻译：扫描电子显微镜通过光电压对比成像
公开(公告)号：US4902967A
公开(公告)日：1990-02-20
申请号：US353722
申请日：1989-05-18
申请人： Larry D. Flesner
发明人： Larry D. Flesner
IPC分类号： G01Q30/02 , G01Q30/04 , G01R31/305
CPC分类号： G01R31/305
摘要： A process and apparatus are disclosed for remotely determining electrical properties of a semiconductor. A surface of the semiconductor is simultaneously irradiated with an electron beam to generate secondary electrons from the irradiated surface and with a modulated light beam. Secondary electrons emitted by the semiconductor are filtered by an electron energy analyzer. An electron detector receives the filtered electrons and provides an output corresponding to electrical properties of the irradiated area. The output is provided to a computer which calculates the difference in output between periods when the semiconductor is being illuminated with the light beam and when it is not so illuminated. The time dependence of the output may also be measured.
摘要翻译：公开了用于远程确定半导体的电特性的方法和装置。同时用电子束照射半导体的表面，从照射的表面和调制的光束产生二次电子。由半导体发射的二次电子被电子能量分析仪滤波。电子检测器接收经滤波的电子并提供对应于照射区域的电性能的输出。输出被提供给计算机，该计算机计算当半导体被光束照射时和在不被照亮时的周期之间的输出差异。也可以测量输出的时间依赖性。

79. 发明授权

US4855596A Photo ion spectrometer 失效
标题翻译：光离子光谱仪
公开(公告)号：US4855596A
公开(公告)日：1989-08-08
申请号：US46117
申请日：1987-05-05
申请人： Dieter M. Gruen , Charles E. Young , Michael J. Pellin
发明人： Dieter M. Gruen , Charles E. Young , Michael J. Pellin
IPC分类号： G01Q30/02 , G01Q30/04 , G01Q90/00 , H01J49/06 , H01J49/14 , H01J49/16 , H01J49/28
CPC分类号： H01J49/484 , H01J49/061 , H01J49/142 , H01J49/161 , H01J49/282
摘要： A method and apparatus for extracting for quantitative analysis ions of selected atomic components of a sample. A lens system is configured to provide a slowly diminishing field region for a volume containing the selected atomic components, enabling accurate energy analysis of ions generated in the slowly diminishing field region. The lens system also enables focusing on a sample of a charged particle beam, such as an ion beam, along a path length perpendicular to the sample and extraction of the charged particles along a path length also perpendicular to the sample. Improvement of signal to noise ratio is achieved by laser excitation of ions to selected autoionization states before carrying out quantitative analysis. Accurate energy analysis of energetic charged particles is assured by using a preselected resistive thick film configuration disposed on an insulator substrate for generating predetermined electric field boundary conditions to achieve for analysis the required electric field potential. The spectrometer also is applicable in the fields of SIMS, ISS and electron spectroscopy.
摘要翻译：一种用于提取样品的选定原子成分的离子进行定量分析的方法和装置。透镜系统被配置为为包含所选择的原子分量的体积提供缓慢减小的场区域，使得能够对在缓慢减小的场区域中产生的离子进行精确的能量分析。透镜系统还可以沿垂直于样品的路径长度聚焦在带电粒子束（例如离子束）的样品上，并且沿垂直于样品的路径长度提取带电粒子。在进行定量分析之前，通过激光激发离子到选择的自动电位状态来实现信噪比的提高。通过使用设置在绝缘体衬底上的预选电阻厚膜配置来确保能量带电粒子的精确能量分析，以产生预定的电场边界条件以实现所需电场电位的分析。光谱仪也适用于SIMS，ISS和电子光谱学领域。

80. 发明授权

US4851768A Characteristic test apparatus for electronic device and method for using the same 失效
标题翻译：电子装置用特征试验装置及其使用方法
公开(公告)号：US4851768A
公开(公告)日：1989-07-25
申请号：US212047
申请日：1988-06-24
申请人： Masahiro Yoshizawa , Akira Kikuchi , Kou Wada , Minpei Fujinami , Nobuo Shimazu
发明人： Masahiro Yoshizawa , Akira Kikuchi , Kou Wada , Minpei Fujinami , Nobuo Shimazu
IPC分类号： H01L21/66 , G01Q30/02 , G01Q30/04 , G01Q90/00 , G01R31/26 , G01R31/302 , G01R31/305 , G01R31/3183 , H01J37/28
CPC分类号： G01R31/305
摘要： In a characteristic test apparatus for an electronic device, a number of voltage supply beams are radiated onto predetermined irradiation positions of the electronic device placed on a sample table. In addition, a potential measuring beam is radiated onto a number of irradiation positions including the predetermined irradiation positions of the voltage supply beams. A secondary electron signal based on the potential measuring beam is detected to measure a potential. When the irradiation position of the potential measuring beam coincides with that of the voltage supply beam, the voltage supply beam is controlled to adjust a potential at the irradiation position to a set value by controlling, e.g., an acceleration power source for the voltage supply beam. When the irradiation position of the potential measuring beam is different from that of the voltage supply beam, a potential at this position is measured. Then, characteristics of the electronic device are calculated based on the obtained potentials at the respective irradiation positions.
摘要翻译：在用于电子设备的特征测试装置中，多个电压供应光束照射到放置在样品台上的电子设备的预定照射位置上。此外，将潜在的测量光束照射到包括电压供应光束的预定照射位置的多个照射位置。检测基于电位测量光束的二次电子信号来测量电位。当电位测量光束的照射位置与电压供应光束的照射位置一致时，电压供应光束被控制以通过控制例如电压源光束的加速度电源来将照射位置处的电位调整到设定值。当电位测量光束的照射位置与电压供应光束的照射位置不同时，测量该位置处的电位。然后，基于在各个照射位置处获得的电位来计算电子设备的特性。

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