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1. 发明授权

US07638377B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07638377B2
公开(公告)日：2009-12-29
申请号：US11710658
申请日：2007-02-23
申请人： Koichiro Tanaka , Hideto Ohnuma , Chiho Kokubo
发明人： Koichiro Tanaka , Hideto Ohnuma , Chiho Kokubo
IPC分类号： H01L21/84
CPC分类号： H01L21/02422 , G02F1/13454 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L21/02691 , H01L27/12 , H01L27/1277 , H01L27/1285 , H01L29/66757 , H01L29/78621 , H01L29/78645 , Y10S438/907
摘要： In a crystallization process of an amorphous semiconductor film, a first polycrystalline semiconductor film, in which amorphous regions are dotted within the continuous crystal region, is obtained by performing heat treatment after introducing a metallic element which promotes crystallization on the amorphous semiconductor film. At this point, the amorphous regions are kept within a predetermined range. A laser beam having a wave length region, which can give more energy to the amorphous region than to the crystal region, is irradiated to the first polycrystalline semiconductor film, it is possible to crystallize the amorphous region without destroying the crystal region. If a TFT is manufactured based on a second polycrystalline semiconductor film, which is obtained through the above-mentioned crystallization processes, the TFT with high electric characteristics and less fluctuation can be obtained.
摘要翻译：在非晶半导体膜的结晶化处理中，通过在导致在非晶半导体膜上促进结晶的金属元素引入后进行热处理，得到非晶区域在连续晶体区域内点缀的第一多晶半导体膜。此时，非晶区域保持在预定范围内。具有能够向非晶区域提供比晶体区域更多能量的波长区域的激光束被照射到第一多晶半导体膜，可以使非晶区域结晶而不破坏晶体区域。如果通过上述结晶工艺获得的基于第二多晶半导体膜制造TFT，则可以获得具有高电特性和较小波动的TFT。

2. 发明授权

US07582162B2 Semiconductor device and semiconductor device production system 有权
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US07582162B2
公开(公告)日：2009-09-01
申请号：US11600833
申请日：2006-11-17
申请人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
发明人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号： C30B11/00 , C30B15/26 , H01L21/335
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译：提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流。在绝缘膜上形成矩形或条纹图案凹陷和突出部分。在绝缘膜上形成半导体膜。通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

3. 发明申请

US20070015323A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070015323A1
公开(公告)日：2007-01-18
申请号：US11513054
申请日：2006-08-31
申请人： Atsuo Isobe , Shunpei Yamazaki , Chiho Kokubo , Koichiro Tanaka , Akihisa Shimomura , Tatsuya Arao , Hidekazu Miyairi , Mai Akiba
发明人： Atsuo Isobe , Shunpei Yamazaki , Chiho Kokubo , Koichiro Tanaka , Akihisa Shimomura , Tatsuya Arao , Hidekazu Miyairi , Mai Akiba
IPC分类号： H01L21/84
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1281 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing conspicuous drops in TFT mobility, reduction in the ON current, and increases in the OFF current, all due to grain boundaries. Depressions and projections with stripe shape or rectangular shape are formed. Continuous wave laser light is then irradiated to a semiconductor film formed on an insulating film along the depressions and projections with stripe shape of the insulating film, or along a longitudinal axis direction or a transverse axis direction of the rectangular shape. Note that although it is most preferable to use continuous wave laser light at this point, pulse wave laser light may also be used.
摘要翻译：本发明的目的是提供一种制造半导体器件的方法以及通过使用能够防止在TFT沟道形成区域中形成晶界的激光结晶化方法而制造的半导体器件，并且是能够防止TFT迁移率的显着下降，导通电流的降低，以及由于晶界而导致的关断电流的增加。形成具有条状或矩形形状的凹凸和凹凸。然后将连续波激光照射到沿绝缘膜条纹形状的凹凸形状的绝缘膜上形成的半导体膜上，或者沿着矩形的长轴方向或横轴方向照射。另外，尽管在这一点上最好使用连续波激光，但也可以使用脉波激光。

4. 发明授权

US07148507B2 Semiconductor device having thin film transistor with position controlled channel formation region 有权
标题翻译：具有具有位置控制沟道形成区域的薄膜晶体管的半导体器件
公开(公告)号：US07148507B2
公开(公告)日：2006-12-12
申请号：US11013539
申请日：2004-12-17
申请人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
发明人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号： H01L21/84 , H01L31/36
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译：提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流。在绝缘膜上形成矩形或条纹图案凹陷和突出部分。在绝缘膜上形成半导体膜。通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

5. 发明授权

US07148092B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US07148092B2
公开(公告)日：2006-12-12
申请号：US10352066
申请日：2003-01-28
申请人： Atsuo Isobe , Shunpei Yamazaki , Chiho Kokubo , Koichiro Tanaka , Akihisa Shimomura , Tatsuya Arao , Hidekazu Miyairi
发明人： Atsuo Isobe , Shunpei Yamazaki , Chiho Kokubo , Koichiro Tanaka , Akihisa Shimomura , Tatsuya Arao , Hidekazu Miyairi
IPC分类号： H01L21/84
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1281 , H01L27/3244 , H01L29/04 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： To provide a semiconductor device composed of a semiconductor element or a group of semiconductor elements, in which a crystalline semiconductor film having as few grain boundaries as possible in a channel formation region is formed on an insulating surface, which can operate at high speed, which have high current drive performance, and which are less fluctuated between elements. The method of the present invention includes: forming an insulating film with an opening on a substrate having an insulating surface; forming on the insulating film and over the opening an amorphous semiconductor film or a polycrystalline semiconductor film that has randomly-formed grain boundaries; forming a crystalline semiconductor film by melting the semiconductor film, pouring the melted semiconductor into the opening of the insulating film, and crystallizing or re-crystallizing the semiconductor film; and removing the crystalline semiconductor film except a portion of the crystalline semiconductor film that is in the opening to form a gate insulating film, which is in contact with the top face of the crystalline semiconductor film, and a gate electrode.

6. 发明授权

US06974732B2 Semiconductor device method of manufacturing 失效
标题翻译：半导体器件制造方法
公开(公告)号：US06974732B2
公开(公告)日：2005-12-13
申请号：US10656239
申请日：2003-09-08
申请人： Hisashi Ohtani , Tamae Takano , Chiho Kokubo
发明人： Hisashi Ohtani , Tamae Takano , Chiho Kokubo
IPC分类号： C30B1/02 , H01L21/20 , H01L21/322 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L21/00
CPC分类号： H01L21/02672 , C30B1/023 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L27/12 , H01L27/1277 , H01L29/04 , Y10S148/09 , Y10S148/091 , Y10S148/093
摘要： To effectively crystallize an amorphous semiconductor film comprising silicon by utilizing nickel element and remove nickel element contributed to the crystallization, a mask 103 is provided on an amorphous silicon film 102, oxide film patterns 107 and 108 including nickel are formed, phosphorus is doped in a region 109, thereafter, heating is performed, nickel element is diffused via paths 110 and 111 and nickel element diffuses in the amorphous silicon film and gettered by phosphorus at the region 109 by which crystallization of diffusion of nickel and gettering of nickel can be carried out simultaneously.
摘要翻译：为了通过利用镍元素有效地结晶包含硅的非晶半导体膜，并除去有助于结晶的镍元素，在非晶硅膜102上提供掩模103，形成包括镍的氧化物膜图案107和108，磷掺杂在区域109之后，进行加热，镍元素经由路径110和111扩散，镍元素在非晶硅膜中扩散并在区域109处被磷吸收，通过该区域可以进行镍的扩散和镍的吸杂的结晶化同时。

7. 发明授权

US06787807B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06787807B2
公开(公告)日：2004-09-07
申请号：US09882265
申请日：2001-06-18
申请人： Shunpei Yamazaki , Toru Mitsuki , Kenji Kasahara , Taketomi Asami , Tamae Takano , Takeshi Shichi , Chiho Kokubo
发明人： Shunpei Yamazaki , Toru Mitsuki , Kenji Kasahara , Taketomi Asami , Tamae Takano , Takeshi Shichi , Chiho Kokubo
IPC分类号： H01L2904
CPC分类号： H01L29/78696 , G02F1/13454 , H01L27/12 , H01L27/1277 , H01L29/045 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78624 , H01L29/78675 , H01L29/78684
摘要： The orientation of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film is improved and a TFT formed from this crystalline semiconductor film is provided. In a semiconductor device whose TFT is formed from a semiconductor layer mainly containing silicon, the semiconductor layer has a channel formation region and an impurity region doped with an impurity of one type of conductivity. 20% or more of the channel formation region is the {101} lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film, the plane being detected by an electron backscatter diffraction pattern method, 3% or less of the channel formation region is the {001} lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film, 5% or less of the channel formation region is the {111} lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film.
摘要翻译：通过使非晶半导体膜结晶而获得的结晶半导体膜的取向得到改善，并且提供了由该结晶半导体膜形成的TFT。在其TFT由主要含硅的半导体层形成的半导体器件中，半导体层具有沟道形成区和掺杂有一种导电类型的杂质的杂质区。沟道形成区域的20％以上是相对于结晶半导体膜的表面形成等于或小于10度的角度的{101}晶格面，通过电子反向散射衍射图法检测的平面，3％以下的沟道形成区域相对于结晶半导体膜的表面形成等于或小于10度的{001}晶格面，5％以下的沟道形成区域为相对于晶体半导体膜的表面形成等于或小于10度的角度的{111}晶格面。

8. 发明授权

US06432756B1 Semiconductor device and fabricating method thereof 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06432756B1
公开(公告)日：2002-08-13
申请号：US09120244
申请日：1998-07-22
申请人： Hisashi Ohtani , Tamae Takano , Chiho Kokubo
发明人： Hisashi Ohtani , Tamae Takano , Chiho Kokubo
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , C30B1/023 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L27/12 , H01L27/1277 , H01L29/04 , Y10S148/09 , Y10S148/091 , Y10S148/093
摘要： To effectively crystallize an amorphous semiconductor film comprising silicon by utilizing nickel element and remove nickel element contributed to the crystallization, a mask 103 is provided on an amorphous silicon film 102, oxide film patterns 107 and 108 including nickel are formed, phosphorus is doped in a region 109, thereafter, heating is performed, nickel element is diffused via paths 110 and 111 and nickel element diffuses in the amorphous silicon film and gettered by phosphorus at the region 109 by which crystallization of diffusion of nickel and gettering of nickel can be carried out simultaneously.
摘要翻译：为了通过利用镍元素有效地结晶包含硅的非晶半导体膜，并除去有助于结晶的镍元素，在非晶硅膜102上提供掩模103，形成包括镍的氧化物膜图案107和108，磷掺杂在区域109之后，进行加热，镍元素经由路径110和111扩散，镍元素在非晶硅膜中扩散并在区域109处被磷吸收，通过该区域可以进行镍的扩散和镍的吸杂的结晶化同时。

9. 发明授权

US08026518B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08026518B2
公开(公告)日：2011-09-27
申请号：US12755801
申请日：2010-04-07
申请人： Chiho Kokubo , Hirokazu Yamagata , Shunpei Yamazaki
发明人： Chiho Kokubo , Hirokazu Yamagata , Shunpei Yamazaki
IPC分类号： H01L29/04
CPC分类号： H01L21/02672 , G02F1/13454 , G09G3/30 , G09G3/3225 , G09G3/3233 , G09G3/3648 , G09G2300/0842 , G09G2300/0861 , H01L21/02532 , H01L21/2022 , H01L27/12 , H01L27/1248 , H01L27/1255 , H01L27/1277 , H01L27/3244 , H01L29/04 , H01L29/66757 , H01L29/78624 , H01L29/78645 , H01L29/78675
摘要： There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat treatment time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arranged at both sides of one active layer and crystallization is made. A boundary portion where crystal growth from one catalytic element introduction region meets crystal growth from the other catalytic element introduction region is formed in a region which becomes a source region or drain region.
摘要翻译：公开了半导体器件和制造半导体器件的方法，其中缩短了晶体生长所需的热处理时间并简化了工艺。两个催化元素引入区域布置在一个有源层的两侧，并进行结晶。在成为源极区域或漏极区域的区域中形成有来自一个催化剂元件导入区域的晶体生长与其他催化剂元素导入区域的晶体生长相交的边界部分。

10. 发明授权

US07795734B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07795734B2
公开(公告)日：2010-09-14
申请号：US11636598
申请日：2006-12-11
申请人： Atsuo Isobe , Shunpei Yamazaki , Chiho Kokubo , Koichiro Tanaka , Akihisa Shimomura , Tatsuya Arao , Hidekazu Miyairi
发明人： Atsuo Isobe , Shunpei Yamazaki , Chiho Kokubo , Koichiro Tanaka , Akihisa Shimomura , Tatsuya Arao , Hidekazu Miyairi
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1281 , H01L27/3244 , H01L29/04 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： To provide a semiconductor device composed of a semiconductor element or a group of semiconductor elements, in which a crystalline semiconductor film having as few grain boundaries as possible in a channel formation region is formed on an insulating surface, which can operate at high speed, which have high current drive performance, and which are less fluctuated between elements. The method of the present invention includes: forming an insulating film with an opening on a substrate having an insulating surface; forming on the insulating film and over the opening an amorphous semiconductor film or a polycrystalline semiconductor film that has randomly-formed grain boundaries; forming a crystalline semiconductor film by melting the semiconductor film, pouring the melted semiconductor into the opening of the insulating film, and crystallizing or re-crystallizing the semiconductor film; and removing the crystalline semiconductor film except a portion of the crystalline semiconductor film that is in the opening to form a gate insulating film, which is in contact with the top face of the crystalline semiconductor film, and a gate electrode.
摘要翻译：为了提供一种由半导体元件或一组半导体元件组成的半导体器件，其中在绝缘表面上形成可在沟道形成区域中具有尽可能少的晶界的结晶半导体膜，其可以高速操作，其中具有高电流驱动性能，并且元件之间波动较小。本发明的方法包括：在具有绝缘表面的基板上形成具有开口的绝缘膜; 在绝缘膜上和开口上形成非晶半导体膜或随机形成晶界的多晶半导体膜; 通过熔化半导体膜形成晶体半导体膜，将熔融的半导体注入到绝缘膜的开口中，并使半导体膜结晶或再结晶; 以及去除除了开口中的结晶半导体膜的部分之外的晶体半导体膜以形成与晶体半导体膜的顶面接触的栅极绝缘膜和栅电极。

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