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1. 发明授权

US5961720A Single crystal-growing apparatus 失效
标题翻译：单晶生长装置
公开(公告)号：US5961720A
公开(公告)日：1999-10-05
申请号：US909138
申请日：1997-08-11
申请人： Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
发明人： Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
IPC分类号： C30B15/00 , C30B15/08 , C30B35/00
CPC分类号： C30B15/08 , C30B15/00 , C30B29/30 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1056 , Y10T117/1064
摘要： A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.
摘要翻译：公开了一种通过向下拉下单晶原料的熔体来连续生产单晶的方法，其中从熔体生长的单晶体被连续地向下拉，并且通过间歇切割连续形成多个单晶产物单晶体向下移动。

2. 发明授权

US06036775A Single crystal-growing method and apparatus 失效
标题翻译：单晶生长方法和装置
公开(公告)号：US06036775A
公开(公告)日：2000-03-14
申请号：US358066
申请日：1999-07-21
申请人： Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
发明人： Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
IPC分类号： C30B15/00 , C30B15/08 , C30B35/00
CPC分类号： C30B15/08 , C30B15/00 , C30B29/30 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1056 , Y10T117/1064
摘要： A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.
摘要翻译：公开了一种通过向下拉下单晶原料的熔体来连续生产单晶的方法，其中从熔体生长的单晶体被连续地向下拉，并且通过间歇切割连续形成多个单晶产物单晶体向下移动。

3. 发明授权

US5690734A Single crystal growing method 失效
标题翻译：单晶生长法
公开(公告)号：US5690734A
公开(公告)日：1997-11-25
申请号：US616525
申请日：1996-03-19
申请人： Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
发明人： Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
IPC分类号： C30B15/00 , C30B15/08 , C30B15/02
CPC分类号： C30B15/08 , C30B15/00 , C30B29/30 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1056 , Y10T117/1064
摘要： A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.
摘要翻译：公开了一种通过向下拉下单晶原料的熔体来连续生产单晶的方法，其中从熔体生长的单晶体被连续地向下拉，并且通过间歇切割连续形成多个单晶产物单晶体向下移动。

4. 发明授权

US06180872B2 Process and apparatus for growing crystalline silicon plates by pulling the plate through a growth member 失效
标题翻译：通过将板拉动通过生长构件来生长晶体硅板的方法和装置
公开(公告)号：US06180872B2
公开(公告)日：2001-01-30
申请号：US09528070
申请日：2000-03-17
申请人： Tsuguo Fukuda , Minoru Imaeda , Yuichiro Imanishi
发明人： Tsuguo Fukuda , Minoru Imaeda , Yuichiro Imanishi
IPC分类号： C30B1534
CPC分类号： C30B29/06 , C30B15/08 , C30B15/24
摘要： A process for growing a crystalline silicon plate, including the steps of arranging a planar growth member and a growth crucible in which a melt of silicon is placed and which is provided with a melt draw-out opening at a lower side thereof, while at least a tip portion of the growth member is located under the draw-out opening, drawing out the melt from the crucible through the draw-out opening, bringing the drawn out melt into contact with the tip portion of the growth member, and further pulling down the melt through the tip portion of the growth member.
摘要翻译：一种用于生长结晶硅板的方法，包括以下步骤：设置平面生长构件和其中放置硅熔体的生长坩埚，并且在其下侧设置有熔体引出开口，同时至少生长部件的前端部位于拉出口下方，通过拉出口从坩埚抽出熔融液，使拉出的熔融物与生长部件的前端部接触，进一步向下拉熔融物通过生长部件的尖端部分。

5. 发明授权

US07927981B2 Apparatus for depositing silicon-based thin film and method for depositing silicon-based thin film 有权
标题翻译：用于沉积硅基薄膜的设备和沉积硅基薄膜的方法
公开(公告)号：US07927981B2
公开(公告)日：2011-04-19
申请号：US12411507
申请日：2009-03-26
申请人： Minoru Imaeda , Yuichiro Imanishi , Takao Saito
发明人： Minoru Imaeda , Yuichiro Imanishi , Takao Saito
IPC分类号： H01L21/00 , H01L21/31 , H01L21/469
CPC分类号： H01J37/32568 , C23C16/24 , C23C16/515 , C23C16/54 , C23C16/545 , H01J37/32018 , H01J37/32027 , H01J37/32045 , H01J37/3244
摘要： A silicon-based thin film depositing apparatus, including a plurality of transparent electrodes disposed to face corresponding counter electrodes with a space therebetween. Subsequently, while injecting a raw material gas from raw material gas injection orifices toward the supporting electrodes and also injecting a barrier gas from barrier gas injection orifices in the same direction as the direction in which the raw material gas is injected, the gases are discharged from a gas outlet, and thereby, the pressure in a chamber is controlled to a pressure of more than 1 kPa. Then, a DC pulse voltage is applied to each counter electrode to deposit a silicon-based thin film. A DC pulse voltage is applied to perform discharge. Therefore, even in a state where the distance between the electrodes is increased, plasma can be generated efficiently, and the in-plane distribution of film thickness can be improved.
摘要翻译：一种硅基薄膜沉积设备，包括多个透明电极，设置成面对相应的对置电极，其间具有空间。随后，在从原料气体喷射孔向支撑电极注入原料气体的同时，从与阻止气体注入孔注入的阻挡气体沿与注入原料气体的方向相同的方向注入时，将气体从气体出口，从而将室中的压力控制在大于1kPa的压力。然后，将DC脉冲电压施加到每个对电极以沉积硅基薄膜。施加直流脉冲电压进行放电。因此，即使在电极之间的距离增加的状态下，也能有效地产生等离子体，能够提高膜厚的面内分布。

6. 发明申请

US20090246943A1 APPARATUS FOR MASS-PRODUCING SILICON-BASED THIN FILM AND METHOD FOR MASS-PRODUCING SILICON-BASED THIN FILM 有权
标题翻译：用于生产基于硅的薄膜的设备和用于生产基于硅的薄膜的方法
公开(公告)号：US20090246943A1
公开(公告)日：2009-10-01
申请号：US12411528
申请日：2009-03-26
申请人： Minoru Imaeda , Yuichiro Imanishi , Takao Saito
发明人： Minoru Imaeda , Yuichiro Imanishi , Takao Saito
IPC分类号： H01L21/20 , C23C16/503
CPC分类号： H01J37/32027 , C23C14/566 , C23C16/4401 , C23C16/54 , H01J37/32018 , H01J37/32045 , H01J37/32568
摘要： A silicon-based thin film mass-producing apparatus, including transparent electrodes placed to face in parallel to corresponding counter electrodes with a space therebetween, and silicon-based thin films are deposited on the transparent electrodes by feeding a raw material gas for depositing the silicon-based thin films into the chamber and by applying a DC pulse voltage to the counter electrodes to generate plasma. Unlike methods in which a radio frequency voltage is intermittently applied to perform discharge, a high plasma density distribution does not occur, and in-plane film thickness distribution does not occur. Furthermore, since the DC pulse voltage rises sharply, the ON period can be shortened. As a result, generation of a sheath ceases in the transient state before reaching the steady state, and the thickness of the sheath is small, which allows the space between the counter and transparent electrodes to decrease.
摘要翻译：通过供给用于沉积硅的原料气体，在透明电极上沉积硅基薄膜质量产生装置，其包括与其间具有空间的相应对置电极平行放置的透明电极和硅基薄膜的薄膜进入室，并通过向对电极施加DC脉冲电压以产生等离子体。不同于间歇地施加射频电压以进行放电的方法，不会发生高等离子体密度分布，并且不会发生面内膜厚分布。此外，由于直流脉冲电压急剧上升，因此能够缩短接通时间。结果，在达到稳定状态之前，鞘的产生在瞬态停止，并且护套的厚度小，这允许计数器和透明电极之间的空间减小。

7. 发明授权

US6072118A Process and apparatus for growing crystalline silicon plates by pulling the plate through a growth member 失效
标题翻译：通过将板拉动通过生长构件来生长晶体硅板的方法和装置
公开(公告)号：US6072118A
公开(公告)日：2000-06-06
申请号：US897945
申请日：1997-07-24
申请人： Tsuguo Fukuda , Minoru Imaeda , Yuichiro Imanishi
发明人： Tsuguo Fukuda , Minoru Imaeda , Yuichiro Imanishi
IPC分类号： C30B29/06 , C30B15/00 , C30B15/08 , C30B15/24 , H01L31/04 , C30B15/34 , H01L21/268
CPC分类号： C30B29/06 , C30B15/08 , C30B15/24
摘要： A process for growing a crystalline silicon plate, including the steps of arranging a planar growth member and a growth crucible in which a melt of silicon is placed and which is provided with a melt draw-out opening at a lower side thereof, while at least a tip portion of the growth member is located under the draw-out opening, drawing out the melt from the crucible through the draw-out opening, bringing the drawn out melt into contact with the tip portion of the growth member, and further pulling down the melt through the tip portion of the growth member.
摘要翻译：一种用于生长结晶硅板的方法，包括以下步骤：设置平面生长构件和其中放置硅熔体的生长坩埚，并且在其下侧设置有熔体引出开口，同时至少生长部件的前端部位于拉出口下方，通过拉出口从坩埚抽出熔融液，使拉出的熔融物与生长部件的前端部接触，进一步向下拉熔融物通过生长部件的尖端部分。

8. 发明申请

US20090246942A1 APPARATUS FOR DEPOSITING SILICON-BASED THIN FILM AND METHOD FOR DEPOSITING SILICON-BASED THIN FILM 有权
标题翻译：沉积硅基薄膜的方法和沉积硅基薄膜的方法
公开(公告)号：US20090246942A1
公开(公告)日：2009-10-01
申请号：US12411507
申请日：2009-03-26
申请人： Minoru Imaeda , Yuichiro Imanishi , Takao Saito
发明人： Minoru Imaeda , Yuichiro Imanishi , Takao Saito
IPC分类号： H01L21/20 , C23C16/503
CPC分类号： H01J37/32568 , C23C16/24 , C23C16/515 , C23C16/54 , C23C16/545 , H01J37/32018 , H01J37/32027 , H01J37/32045 , H01J37/3244
摘要： A silicon-based thin film depositing apparatus, including a plurality of transparent electrodes disposed to face corresponding counter electrodes with a space therebetween. Subsequently, while injecting a raw material gas from raw material gas injection orifices toward the supporting electrodes and also injecting a barrier gas from barrier gas injection orifices in the same direction as the direction in which the raw material gas is injected, the gases are discharged from a gas outlet, and thereby, the pressure in a chamber is controlled to a pressure of more than 1 kPa. Then, a DC pulse voltage is applied to each counter electrode to deposit a silicon-based thin film. A DC pulse voltage is applied to perform discharge. Therefore, even in a state where the distance between the electrodes is increased, plasma can be generated efficiently, and the in-plane distribution of film thickness can be improved.
摘要翻译：一种硅基薄膜沉积设备，包括多个透明电极，设置成面对相应的对置电极，其间具有空间。随后，在从原料气体喷射孔向支撑电极注入原料气体的同时，从与阻止气体注入孔注入的阻挡气体沿与注入原料气体的方向相同的方向注入时，将气体从气体出口，从而将室中的压力控制在大于1kPa的压力。然后，将DC脉冲电压施加到每个对电极以沉积硅基薄膜。施加直流脉冲电压进行放电。因此，即使在电极之间的距离增加的状态下，也能有效地产生等离子体，能够提高膜厚的面内分布。

9. 发明授权

US07927982B2 Apparatus for mass-producing silicon-based thin film and method for mass-producing silicon-based thin film 有权
标题翻译：用于批量生产硅基薄膜的装置和用于批量生产硅基薄膜的方法
公开(公告)号：US07927982B2
公开(公告)日：2011-04-19
申请号：US12411528
申请日：2009-03-26
申请人： Minoru Imaeda , Yuichiro Imanishi , Takao Saito
发明人： Minoru Imaeda , Yuichiro Imanishi , Takao Saito
IPC分类号： H01L21/00 , H01L21/31 , H01L21/469
CPC分类号： H01J37/32027 , C23C14/566 , C23C16/4401 , C23C16/54 , H01J37/32018 , H01J37/32045 , H01J37/32568
摘要： A silicon-based thin film mass-producing apparatus, including transparent electrodes placed to face in parallel to corresponding counter electrodes with a space therebetween, and silicon-based thin films are deposited on the transparent electrodes by feeding a raw material gas for depositing the silicon-based thin films into the chamber and by applying a DC pulse voltage to the counter electrodes to generate plasma. Unlike methods in which a radio frequency voltage is intermittently applied to perform discharge, a high plasma density distribution does not occur, and in-plane film thickness distribution does not occur. Furthermore, since the DC pulse voltage rises sharply, the ON period can be shortened. As a result, generation of a sheath ceases in the transient state before reaching the steady state, and the thickness of the sheath is small, which allows the space between the counter and transparent electrodes to decrease.
摘要翻译：通过供给用于沉积硅的原料气体，在透明电极上沉积硅基薄膜质量产生装置，其包括与其间具有空间的相应对置电极平行放置的透明电极和硅基薄膜的薄膜进入室，并通过向对电极施加DC脉冲电压以产生等离子体。不同于间歇地施加射频电压以进行放电的方法，不会发生高等离子体密度分布，并且不会发生面内膜厚分布。此外，由于直流脉冲电压急剧上升，因此能够缩短接通时间。结果，在达到稳定状态之前，鞘的产生在瞬态停止，并且护套的厚度小，这允许计数器和透明电极之间的空间减小。

10. 发明申请

US20080193330A1 surface treatment apparatus 审中-公开
标题翻译：表面处理装置
公开(公告)号：US20080193330A1
公开(公告)日：2008-08-14
申请号：US11826957
申请日：2007-07-19
申请人： Eiki Hotta , Naohiro Shimizu , Yuichiro Imanishi
发明人： Eiki Hotta , Naohiro Shimizu , Yuichiro Imanishi
IPC分类号： A61L2/14
CPC分类号： H01J37/3244 , H01J37/32009
摘要： A surface treatment apparatus encompasses a gas introducing system configured to introduce a process gas from one end of a tubular treatment object; a vacuum evacuating system configured to evacuate the process gas from other end of the treatment object; an excited particle supplying system disposed at the gas supply upstream side to the treatment object, configured to supply excited particles for inducing initial discharge in a main body of the treatment object; and a first main electrode and a second main electrode disposed oppositely to each other, defining a treating region of the treatment object as a main plasma generating region disposed therebetween, wherein the excited particle supplying system is driven at least until generation of main plasma, and main pulse of duty ratio of 10−7 to 10−1 is applied between the first main electrode and second main electrode, to generate a non-thermal equilibrium plasma flow inside the treatment object, and thereby an inner surface of the treatment object is treated.
摘要翻译：表面处理装置包括：气体导入系统，其构造成从管状处理物体的一端引入处理气体; 真空排气系统，其构造成从处理对象的另一端抽出处理气体; 设置在处理对象的气体供给上游侧的激发粒子供给系统，被配置为在被处理体的主体中供给用于引发初始排出的激发粒子; 以及相对设置的第一主电极和第二主电极，将处理对象的处理区域设定为设置在其间的主等离子体产生区域，其中所述激发粒子供给系统至少被驱动至主等离子体的产生，以及在第一主电极和第二主电极之间施加占空比为10 -7至10 -1的主脉冲，以在第一主电极和第二主电极之间产生非热平衡等离子体流处理对象，从而处理对象的内表面。

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