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    • 1. 发明授权
    • Self-monitoring semiconductor laser device
    • 自我监测半导体激光器件
    • US5136603A
    • 1992-08-04
    • US692746
    • 1991-04-29
    • Ghulam HasnainKuochou Tai
    • Ghulam HasnainKuochou Tai
    • H01L27/15H01S5/00H01S5/026H01S5/042H01S5/183H01S5/187H01S5/50
    • H01S5/0264H01S5/183H01S5/0427H01S5/18302
    • The present invention is a semiconductor laser having an integral photodiode and/or modulator. The integrated structure comprises a quantum well active region sandwiched between a pair of distributed Bragg reflector stacks for emitting laser light transverse to the planes of growth. An intrinsic layer and a doped semiconductor layer are disposed on one of the reflector stacks for forming, in combination with the outer layer of the stack, a photodiode in the path of emitted light. The diode can be used either to monitor the laser power or to modulate the laser output. The device is particularly suited for fabrication and testing in large arrays and, in addition, has the advantages of a circular, low divergence optical output, inherently single mode operation, and a high two-dimensional packing density.
    • 本发明是具有整体光电二极管和/或调制器的半导体激光器。 集成结构包括夹在一对分布布拉格反射器叠层之间的量子阱有源区域,用于发射横切于生长平面的激光。 本征层和掺杂半导体层设置在一个反射器叠层上,用于与发射光的路径中的叠层的外层结合形成光电二极管。 二极管可用于监视激光功率或调制激光输出。 该器件特别适用于大阵列的制造和测试,另外具有圆形,低发散光输出,固有单模操作和高二维封装密度的优点。
    • 4. 发明申请
    • Distributed LED-Based Light Source
    • 分布式LED基光源
    • US20110068672A1
    • 2011-03-24
    • US12888055
    • 2010-09-22
    • Ghulam Hasnain
    • Ghulam Hasnain
    • H01J61/52
    • F21V29/70F21K9/00F21V23/005F21V29/507H01L2224/48091H05K1/0203H05K1/0206H05K1/05H05K2201/10106H01L2924/00014
    • A light source having a substrate with a plurality of component LED light generators mounted thereon is disclosed. The substrate has a first metallic surface characterized by a normal that points in a normal direction. The first metallic surface is in contact with air over the first metallic surface. The component LED light generators are mounted directly on the first metallic surface. Each component LED light generator includes an LED characterized by an operating temperature and emitting light in the normal direction. Each LED generator generates more than 0.5 watts of heat. The component LED light generators are spaced apart on the first metallic surface such that the operating temperature remains less than 75° C. above the air temperature. In one aspect of the invention, the first metallic surface surrounding each component LED light generator radiates an amount of heat equal to the heat generated by that component LED light generator.
    • 公开了具有安装在其上的多个部件LED发光体的基板的光源。 衬底具有第一金属表面,其特征在于法线方向上指向法线。 第一金属表面与第一金属表面上的空气接触。 组件LED发光器直接安装在第一金属表面上。 每个元件LED发光器包括一个LED,其特征在于工作温度并在正常方向上发光。 每个LED发生器产生超过0.5瓦特的热量。 组件LED发光器在第一金属表面上间隔开,使得工作温度保持在高于空气温度的75℃以上。 在本发明的一个方面,围绕每个部件LED光发生器的第一金属表面辐射相当于由该部件LED光发生器产生的热量的热量。
    • 5. 发明申请
    • Method and Apparatus for Manufacturing LED Devices using Laser Scribing
    • 使用激光划线制造LED器件的方法和装置
    • US20110031508A1
    • 2011-02-10
    • US12906349
    • 2010-10-18
    • Norihito HamaguchiGhulam Hasnain
    • Norihito HamaguchiGhulam Hasnain
    • H01L33/00B23K26/00
    • H01L33/0095B23K26/40B23K2101/40B23K2103/50
    • A method of manufacturing a light-emitting device using laser scribing to improve overall light output is disclosed. Upon placing a semiconductor wafer having light emitting diode (“LED”) devices separated by streets on a wafer chuck, the process arranges a first surface of semiconductor wafer containing front sides of the LED devices facing up and a second surface of semiconductor wafer containing back sides of the LED devices facing toward the wafer chuck. After aligning a laser device over the first surface of the semiconductor wafer above a street, the process is configured to focus a high intensity portion of a laser beam generated by the laser device at a location in a substrate closer to the back sides of the LED devices.
    • 公开了一种使用激光划线制造发光装置以提高整体光输出的方法。 在将具有由街道分隔开的发光二极管(“LED”)器件的半导体晶片放置在晶片卡盘上时,该工艺将包含LED器件的前侧的半导体晶片的第一表面朝上并且包含背面的半导体晶片的第二表面 LED器件的侧面朝向晶片卡盘。 在将激光装置对准在街道上方的半导体晶片的第一表面上之后,该处理被配置为将由激光装置产生的激光束的高强度部分聚焦在更靠近LED背面的基板中的位置 设备。
    • 7. 发明申请
    • Method And Apparatus For Manufacturing LED Devices Using Laser Scribing
    • 使用激光划线制造LED器件的方法和装置
    • US20100140630A1
    • 2010-06-10
    • US12434208
    • 2009-05-01
    • Norihito HamaguchiGhulam Hasnain
    • Norihito HamaguchiGhulam Hasnain
    • H01L33/00B23K26/36
    • H01L33/0095B23K26/40B23K2101/40B23K2103/50
    • A method of manufacturing a light-emitting device using laser scribing to improve overall light output is disclosed. Upon placing a semiconductor wafer having light emitting diode (“LED”) devices separated by streets on a wafer chuck, the process arranges a first surface of semiconductor wafer containing front sides of the LED devices facing up and a second surface of semiconductor wafer containing back sides of the LED devices facing toward the wafer chuck. After aligning a laser device over the first surface of the semiconductor wafer above a street, the process is configured to focus a high intensity portion of a laser beam generated by the laser device at a location in a substrate closer to the back sides of the LED devices.
    • 公开了一种使用激光划线制造发光装置以提高整体光输出的方法。 在将具有由街道分隔开的发光二极管(“LED”)器件的半导体晶片放置在晶片卡盘上时,该工艺将包含LED器件的前侧的半导体晶片的第一表面朝上并且包含背面的半导体晶片的第二表面 LED器件的侧面朝向晶片卡盘。 在将激光装置对准在街道上方的半导体晶片的第一表面上之后,该处理被配置为将由激光装置产生的激光束的高强度部分聚焦在更靠近LED背面的基板中的位置 设备。