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1. 发明申请

US20100173480A1 LASER ANNEALING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：激光退火设备和半导体器件制造方法
公开(公告)号：US20100173480A1
公开(公告)日：2010-07-08
申请号：US12494416
申请日：2009-06-30
申请人： Shunpei Yamazaki , Koichiro Tanaka , Masaaki Hiroki
发明人： Shunpei Yamazaki , Koichiro Tanaka , Masaaki Hiroki
IPC分类号： H01L21/268 , H01L21/20
CPC分类号： H01L21/02691 , B23K26/0838 , C21D1/34 , H01L21/02686 , H01L21/2026
摘要： This invention is intended to provide a laser annealing method by employing a laser annealer lower in running cost so as to deal with a large-sized substrate, for preventing or decreasing the generation of a concentric pattern and to provide a semiconductor device manufacturing method including a step using the laser annealing method. While moving a substrate at a constant rate between 20 and 200 cm/s, a laser beam is radiated aslant to a semiconductor film on a surface of the semiconductor substrate. Therefore, it is possible to radiate a uniform laser beam to even a semiconductor film on a large-sized substrate and to thereby manufacture a semiconductor device for which the generation of a concentric pattern is prevented or decreased. By condensing a plurality of laser beams into one flux, it is possible to prevent or decrease the generation of a concentric pattern and to thereby improve the reliability of the semiconductor device.
摘要翻译：本发明旨在提供一种激光退火方法，其采用运行成本较低的激光退火机，以处理大尺寸基板，以防止或减少同心图案的产生，并提供一种半导体器件制造方法，包括使用激光退火方法。当以20-200cm / s之间的恒定速率移动衬底时，激光束被倾斜地辐射到半导体衬底的表面上的半导体膜。因此，能够将均匀的激光束照射到大尺寸基板上的半导体膜上，从而制造防止或减少同心图案的产生的半导体器件。通过将多个激光束聚光成一个通量，可以防止或减少同心图案的产生，从而提高半导体器件的可靠性。

2. 发明授权

US07560397B2 Laser irradiation method and method of manufacturing a semiconductor device 有权
标题翻译：激光照射方法及半导体装置的制造方法
公开(公告)号：US07560397B2
公开(公告)日：2009-07-14
申请号：US11709200
申请日：2007-02-22
申请人： Shunpei Yamazaki , Hiroshi Shibata , Koichiro Tanaka , Masaaki Hiroki , Mai Akiba
发明人： Shunpei Yamazaki , Hiroshi Shibata , Koichiro Tanaka , Masaaki Hiroki , Mai Akiba
IPC分类号： H01L21/26
CPC分类号： H01L21/02691 , H01L21/02678 , H01L21/02683 , H01L21/2026 , H01L27/12 , H01L27/1281 , H01L27/1285 , H01L29/66757 , H01L29/78621 , H01L29/78675 , Y10S438/942
摘要： A method of manufacturing a semiconductor device is provided which uses a laser crystallization method capable of increasing substrate processing efficiency. An island-like semiconductor film including one or more islands is formed by patterning (sub-island). The sub-island is then irradiated with laser light to improve its crystallinity, and thereafter patterned to form an island. From pattern information of a sub-island, a laser light scanning path on a substrate is determined such that at least the sub-island is irradiated with laser light. In other words, the present invention runs laser light so as to obtain at least the minimum degree of crystallization of a portion that has to be crystallized, instead of irradiating the entire substrate with laser light.
摘要翻译：提供一种制造半导体器件的方法，其使用能够提高衬底处理效率的激光结晶方法。通过图案化（子岛）形成包括一个或多个岛的岛状半导体膜。然后用激光照射子岛以改善其结晶度，然后图案化以形成岛。从子岛的图案信息，确定基板上的激光扫描路径，使得至少使该子岛被激光照射。换句话说，本发明运行激光，以便至少获得必须结晶的部分的最小结晶度，而不是用激光照射整个基板。

3. 发明申请

US20070000428A1 Laser irradiation apparatus 有权
标题翻译：激光照射装置
公开(公告)号：US20070000428A1
公开(公告)日：2007-01-04
申请号：US11514969
申请日：2006-09-05
申请人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Satoshi Murakami , Mai Akiba
发明人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Satoshi Murakami , Mai Akiba
IPC分类号： C30B15/14
CPC分类号： H01L27/1285 , B23K26/0604 , B23K26/0608 , B23K26/066 , B23K26/0738 , H01L21/02683 , H01L21/02691 , H01L21/2026 , H01L21/76894 , H01L27/1296 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L51/5284 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.
摘要翻译：根据掩模掌握半导体膜上的应该留在基板上的每个区域。然后，确定要用激光扫描的每个区域，使得至少要通过图案化获得的区域结晶，并且使光点撞击要扫描的区域，从而部分地使半导体膜结晶。光束点的低输出能量的每个部分被狭缝屏蔽。在本发明中，激光不被扫描并照射到半导体膜的整个表面上，而被扫描，使得至少每个不可缺少的部分被最终结晶化。利用上述结构，可以在半导体膜结晶之后通过图案化节省将激光照射到要去除的每个部分上所需的时间。

4. 发明授权

US07050878B2 Semiconductror fabricating apparatus 有权
标题翻译：半导体制造装置
公开(公告)号：US07050878B2
公开(公告)日：2006-05-23
申请号：US10300927
申请日：2002-11-21
申请人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba
发明人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba
IPC分类号： G06F19/00
CPC分类号： H01L21/02678 , B23K26/04 , B23K26/0604 , B23K26/064 , B23K26/0648 , B23K26/0665 , B23K26/12 , B23K26/1224 , B23K26/123 , B23K26/127 , H01L21/02683 , H01L21/2026
摘要： Providing a semiconductor fabricating apparatus using a laser crystallization technique for enhancing the processing efficiency for substrate and for increasing the mobility of a semiconductor film. The semiconductor fabricating apparatus of multi-chamber system includes a film formation equipment for forming a semiconductor film, and a laser irradiation equipment. The laser irradiation equipment includes first means for controlling a laser irradiation position relative to an irradiation object, second means (laser oscillator) for emitting laser light, third means (optical system) for processing or converging the laser light, and fourth means for controlling the oscillation of the second means and for controlling the first means in a manner that a beam spot of the laser light processed by the third means may cover a place determined based on data on a mask configuration (pattern information).
摘要翻译：提供一种使用激光结晶技术的半导体制造装置，用于提高衬底的处理效率和增加半导体膜的迁移率。多室系统的半导体制造装置包括用于形成半导体膜的成膜设备和激光照射设备。激光照射设备包括用于控制相对于照射物体的激光照射位置的第一装置，用于发射激光的第二装置（激光振荡器），用于处理或会聚激光的第三装置（光学系统），以及用于控制第二装置的振荡和第一装置的控制，使得由第三装置处理的激光束的光斑可以覆盖基于掩模配置（图案信息）上的数据确定的位置。

5. 发明申请

US20050277028A1 Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment 有权
标题翻译：激光装置，激光照射方法，半导体装置的制造方法，半导体装置，使用该激光装置的半导体装置的制造系统以及电子设备
公开(公告)号：US20050277028A1
公开(公告)日：2005-12-15
申请号：US11185737
申请日：2005-07-21
申请人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba
发明人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba
IPC分类号： H01L21/20 , B23K26/06 , B23K26/08 , G02F1/1368 , G03F1/00 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/786 , H01S3/00 , H01S5/06
CPC分类号： H01L21/02683 , B23K26/0604 , B23K26/0608 , B23K26/082 , B23K2101/007 , H01L21/02691 , H01L21/2026 , H01L27/1285
摘要： Provided are a laser apparatus of continuous oscillation that is capable of enhancing the efficiency of substrate processing, a laser irradiation method, and a manufacturing method for a semiconductor device using the laser apparatus. A portion of a semiconductor film that should be left on a substrate after patterning is grasped in accordance with a mask. Then, a portion to be scanned with a laser light is determined so that it is possible to crystallize at least the portion to be obtained through the patterning. Also, a beam spot is made to strike the portion to be scanned. As a result, the semiconductor film is partially crystallized. That is, with the present invention, the laser light is not scanned and irradiated onto the entire surface of a semiconductor film but is scanned so that at least an indispensable portion is crystallized. With the construction described above, it becomes possible to save a time taken to irradiate the laser light onto a portion that will be removed through the patterning after the crystallization of the semiconductor film.
摘要翻译：提供能够提高基板处理效率的连续振荡的激光装置，激光照射方法以及使用该激光装置的半导体装置的制造方法。根据掩模掌握在图案化之后留在基板上的半导体膜的一部分。然后，确定要用激光扫描的部分，使得可以通过图案化至少使待获得的部分结晶。此外，使光束点撞击要扫描的部分。结果，半导体膜部分结晶。也就是说，利用本发明，激光不被扫描并照射到半导体膜的整个表面上，而是被扫描，使得至少不可缺少的部分被结晶。利用上述结构，可以将半导体膜结晶后的激光照射到通过图案化去除的部分上所花费的时间。

6. 发明申请

US20050035095A1 Laser annealing apparatus and semiconductor device manufacturing method 有权
标题翻译：激光退火装置及半导体装置的制造方法
公开(公告)号：US20050035095A1
公开(公告)日：2005-02-17
申请号：US10944000
申请日：2004-09-20
申请人： Shunpei Yamazaki , Koichiro Tanaka , Masaaki Hiroki
发明人： Shunpei Yamazaki , Koichiro Tanaka , Masaaki Hiroki
IPC分类号： H01L21/268 , B23K26/08 , C21D1/34 , H01L21/20 , H01L21/314 , B23K26/00
CPC分类号： H01L21/02691 , B23K26/0838 , C21D1/34 , H01L21/02686 , H01L21/2026
摘要： This invention is intended to provide a laser annealing method by employing a laser annealer lower in running cost so as to deal with a large-sized substrate, for preventing or decreasing the generation of a concentric pattern and to provide a semiconductor device manufacturing method including a step using the laser annealing method. While moving a substrate at a constant rate between 20 and 200 cm/s, a laser beam is radiated aslant to a semiconductor film on a surface of the semiconductor substrate. Therefore, it is possible to radiate a uniform laser beam to even a semiconductor film on a large-sized substrate and to thereby manufacture a semiconductor device for which the generation of a concentric pattern is prevented or decreased. By condensing a plurality of laser beams into one flux, it is possible to prevent or decrease the generation of a concentric pattern and to thereby improve the reliability of the semiconductor device.
摘要翻译：本发明旨在提供一种激光退火方法，其采用运行成本较低的激光退火机，以处理大尺寸基板，以防止或减少同心图案的产生，并提供一种半导体器件制造方法，包括使用激光退火方法。当以20-200cm / s之间的恒定速率移动衬底时，激光束被倾斜地辐射到半导体衬底的表面上的半导体膜。因此，能够将均匀的激光束照射到大尺寸基板上的半导体膜上，从而制造防止或减少同心图案的产生的半导体器件。通过将多个激光束聚光成一个通量，可以防止或减少同心图案的产生，从而提高半导体器件的可靠性。

7. 发明授权

US06847006B2 Laser annealing apparatus and semiconductor device manufacturing method 有权
公开(公告)号：US06847006B2
公开(公告)日：2005-01-25
申请号：US10212773
申请日：2002-08-07
申请人： Shunpei Yamazaki , Koichiro Tanaka , Masaaki Hiroki
发明人： Shunpei Yamazaki , Koichiro Tanaka , Masaaki Hiroki
IPC分类号： H01L21/268 , B23K26/08 , C21D1/34 , H01L21/20 , H01L21/314 , B66C21/00
CPC分类号： H01L21/02691 , B23K26/0838 , C21D1/34 , H01L21/02686 , H01L21/2026
摘要： This invention is intended to provide a laser annealing method by employing a laser annealer lower in running cost so as to deal with a large-sized substrate, for preventing or decreasing the generation of a concentric pattern and to provide a semiconductor device manufacturing method including a step using the laser annealing method. While moving a substrate at a constant rate between 20 and 200 cm/s, a laser beam is radiated aslant to a semiconductor film on a surface of the semiconductor substrate. Therefore, it is possible to radiate a uniform laser beam to even a semiconductor film on a large-sized substrate and to thereby manufacture a semiconductor device for which the generation of a concentric pattern is prevented or decreased. By condensing a plurality of laser beams into one flux, it is possible to prevent or decrease the generation of a concentric pattern and to thereby improve the reliability of the semiconductor device.

8. 发明授权

US08696808B2 Laser irradiation apparatus 有权
标题翻译：激光照射装置
公开(公告)号：US08696808B2
公开(公告)日：2014-04-15
申请号：US11514969
申请日：2006-09-05
申请人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Satoshi Murakami , Mai Akiba
发明人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Satoshi Murakami , Mai Akiba
IPC分类号： C30B1/04
CPC分类号： H01L27/1285 , B23K26/0604 , B23K26/0608 , B23K26/066 , B23K26/0738 , H01L21/02683 , H01L21/02691 , H01L21/2026 , H01L21/76894 , H01L27/1296 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L51/5284 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.
摘要翻译：根据掩模掌握半导体膜上的应该留在基板上的每个区域。然后，确定要用激光扫描的每个区域，使得至少要通过图案化获得的区域结晶，并且使光点撞击要扫描的区域，从而部分地使半导体膜结晶。光束点的低输出能量的每个部分被狭缝屏蔽。在本发明中，激光不被扫描并照射到半导体膜的整个表面上，而被扫描，使得至少每个不可缺少的部分被最终结晶化。利用上述结构，可以在半导体膜结晶之后通过图案化节省将激光照射到要去除的每个部分上所需的时间。

9. 发明授权

US07279372B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07279372B2
公开(公告)日：2007-10-09
申请号：US10882343
申请日：2004-07-02
申请人： Shunpei Yamazaki , Akihisa Shimomura , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba , Kenji Kasahara
发明人： Shunpei Yamazaki , Akihisa Shimomura , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba , Kenji Kasahara
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/0237 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02686 , H01L23/544 , H01L27/1285 , H01L29/42384 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Island-like semiconductor films and markers are formed prior to laser irradiation. Markers are used as positional references so as not to perform laser irradiation all over the semiconductor within a substrate surface, but to perform a minimum crystallization on at least indispensable portion. Since the time required for laser crystallization can be reduced, it is possible to increase the substrate processing speed. By applying the above-described constitution to a conventional SLS method, a means for solving such problem in the conventional SLS method that the substrate processing efficiency is insufficient, is provided.
摘要翻译：在激光照射之前形成岛状半导体膜和标记。标记用作位置参考，以便不在衬底表面内的整个半导体上执行激光照射，而是在至少不可缺少的部分上进行最小结晶。由于可以减少激光结晶所需的时间，可以提高基板处理速度。通过将上述结构应用于传统的SLS方法，提供了一种用于在传统SLS方法中解决这种问题的方法，即基板处理效率不足。

10. 发明授权

US07105048B2 Laser irradiation apparatus 失效
公开(公告)号：US07105048B2
公开(公告)日：2006-09-12
申请号：US10305367
申请日：2002-11-27
申请人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Satoshi Murakami , Mai Akiba
发明人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Satoshi Murakami , Mai Akiba
IPC分类号： C30B1/02
CPC分类号： H01L27/1285 , B23K26/0604 , B23K26/0608 , B23K26/066 , B23K26/0738 , H01L21/02683 , H01L21/02691 , H01L21/2026 , H01L21/76894 , H01L27/1296 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L51/5284 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.

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