专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050098117A1 Segmented resonant antenna for radio frequency inductively coupled plasmas 有权
标题翻译：用于射频感应耦合等离子体的分段谐振天线
公开(公告)号：US20050098117A1
公开(公告)日：2005-05-12
申请号：US10702368
申请日：2003-11-06
申请人： William DiVergilio , Victor Benveniste , Peter Kellerman
发明人： William DiVergilio , Victor Benveniste , Peter Kellerman
IPC分类号： C23C16/00 , H01J37/08 , H01J37/32
CPC分类号： H01J37/321
摘要： An ion shower system is disclosed and comprises a plasma source operable to generate source gas ions within a chamber. The plasma source further comprises a plurality of conductor segments and a plurality of capacitors, wherein the conductor segments are serially connected through the plurality of capacitors. The plasma source further comprises an antenna drive circuit coupled to the plurality of conductor segments that provides power to the conductor segments and capacitors at a predetermined frequency. The ion shower system also comprises a source gas inlet that provides a source gas to the chamber. The conductor segments, capacitors and antenna drive circuit cooperatively provide energy to charged particles in the chamber, thereby energizing the charged particles and generating a plasma comprising source gas ions and electrons within the chamber due to ionizing collisions between the energized charged particles and the source gas.
摘要翻译：公开了一种离子淋浴系统，其包括可操作以在室内产生源气体离子的等离子体源。等离子体源还包括多个导体段和多个电容器，其中导体段通过多个电容器串联连接。等离子体源还包括耦合到多个导体段的天线驱动电路，其以预定频率向导体段和电容器提供功率。离子淋浴系统还包括向腔室提供源气体的源气体入口。导体段，电容器和天线驱动电路协同地向腔室中的带电粒子提供能量，从而由于通电带电粒子和源气体之间的电离碰撞，激发带电粒子并产生包含源室气体离子和电子的等离子体。

2. 发明申请

US20070044717A1 Segmented resonant antenna for radio frequency inductively coupled plasmas 审中-公开
标题翻译：用于射频感应耦合等离子体的分段谐振天线
公开(公告)号：US20070044717A1
公开(公告)日：2007-03-01
申请号：US11544971
申请日：2006-10-06
申请人： William DiVergilio , Victor Benveniste , Peter Kellerman
发明人： William DiVergilio , Victor Benveniste , Peter Kellerman
IPC分类号： C23C16/00
CPC分类号： H01J37/321
摘要： An ion shower system is disclosed and comprises a plasma source operable to generate source gas ions within a chamber. The plasma source further comprises a plurality of conductor segments and a plurality of capacitors, wherein the conductor segments are serially connected through the plurality of capacitors. The plasma source further comprises an antenna drive circuit coupled to the plurality of conductor segments that provides power to the conductor segments and capacitors at a predetermined frequency. The ion shower system also comprises a source gas inlet that provides a source gas to the chamber. The conductor segments, capacitors and antenna drive circuit cooperatively provide energy to charged particles in the chamber, thereby energizing the charged particles and generating a plasma comprising source gas ions and electrons within the chamber due to ionizing collisions between the energized charged particles and the source gas.
摘要翻译：公开了一种离子淋浴系统，其包括可操作以在室内产生源气体离子的等离子体源。等离子体源还包括多个导体段和多个电容器，其中导体段通过多个电容器串联连接。等离子体源还包括耦合到多个导体段的天线驱动电路，其以预定频率向导体段和电容器提供功率。离子淋浴系统还包括向腔室提供源气体的源气体入口。导体段，电容器和天线驱动电路协同地向腔室中的带电粒子提供能量，从而由于通电带电粒子和源气体之间的电离碰撞，激发带电粒子并产生包含源室气体离子和电子的等离子体。

3. 发明申请

US20060145096A1 ION BEAM SCANNING CONTROL METHODS AND SYSTEMS FOR ION IMPLANTATION UNIFORMITY 有权
标题翻译：离子束扫描控制方法和系统用于离子植入均匀性
公开(公告)号：US20060145096A1
公开(公告)日：2006-07-06
申请号：US11029052
申请日：2005-01-04
申请人： Victor Benveniste , Peter Kellerman , William DiVergilio
发明人： Victor Benveniste , Peter Kellerman , William DiVergilio
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/31703
摘要： Methods are provided for calibrating an ion beam scanner in an ion implantation system, comprising measuring a plurality of initial current density values at a plurality of locations along a scan direction, where the values individually correspond to one of a plurality of initial voltage scan intervals and one of a corresponding plurality of initial scan time values, creating a system of linear equations based on the measured initial current density values and the initial voltage scan intervals, and determining a set of scan time values that correspond to a solution to the system of linear equations that reduces current density profile deviations. A calibration system is provided for calibrating an ion beam scanner in an ion implantation system, comprising a dosimetry system and a control system.
摘要翻译：提供了用于在离子注入系统中校准离子束扫描器的方法，包括在沿着扫描方向的多个位置处测量多个初始电流密度值，其中所述值分别对应于多个初始电压扫描间隔中的一个，以及相应的多个初始扫描时间值中的一个，基于测量的初始电流密度值和初始电压扫描间隔创建线性方程组，并且确定与线性系统的解的对应的一组扫描时间值减小电流密度分布偏差的方程式。提供校准系统用于在离子注入系统中校准离子束扫描器，包括剂量测定系统和控制系统。

4. 发明申请

US20050052817A1 CLAMPING AND DE-CLAMPING SEMICONDUCTOR WAFERS ON AN ELECTROSTATIC CHUCK USING WAFER INERTIAL CONFINEMENT BY APPLYING A SINGLE-PHASE SQUARE WAVE AC CLAMPING VOLTAGE 失效
标题翻译：通过应用单相波形交流钳位电压，使用波形器实时限制的静电卡盘上的钳位和去钳位半导体波形
公开(公告)号：US20050052817A1
公开(公告)日：2005-03-10
申请号：US10657449
申请日：2003-09-08
申请人： Peter Kellerman , Shu Qin , William DiVergilio
发明人： Peter Kellerman , Shu Qin , William DiVergilio
IPC分类号： H01L21/683 , H02N13/00 , H01H1/00
CPC分类号： H01L21/6833 , H02N13/00
摘要： The present invention is directed to a method for clamping a wafer to an electrostatic chuck using a single-phase square wave AC clamping voltage. The method comprises determining a single-phase square wave clamping voltage for the electrostatic chuck, wherein the determination is based, at least in part, on an inertial response time of the wafer. The wafer is placed on the electrostatic chuck, wherein a gap between the electrostatic chuck and the wafer is defined. The determined single-phase square wave clamping voltage is then applied, wherein the wafer is generally clamped to the electrostatic chuck within a predetermined distance, while an amount of electrostatic charge is generally not allowed to accumulate, thereby enabling a fast de-clamping of the wafer.
摘要翻译：本发明涉及使用单相方波交流钳位电压将晶片夹持到静电卡盘的方法。该方法包括确定用于静电卡盘的单相方波钳位电压，其中所述确定至少部分地基于晶片的惯性响应时间。将晶片放置在静电卡盘上，其中定义静电卡盘和晶片之间的间隙。然后施加确定的单相方波钳位电压，其中晶片通常在预定距离内被夹持在静电卡盘上，而静电电荷的量通常不允许累积，从而能够快速地去夹紧晶圆。

5. 发明申请

US20150037983A1 OPTICAL HEAT SOURCE WITH RESTRICTED WAVELENGTHS FOR PROCESS HEATING 有权
标题翻译：具有限制波长的光学热源用于加热
公开(公告)号：US20150037983A1
公开(公告)日：2015-02-05
申请号：US13923955
申请日：2013-06-21
申请人： David Bernhardt , W. Davis Lee , William DiVergilio , Marvin Farley
发明人： David Bernhardt , W. Davis Lee , William DiVergilio , Marvin Farley
IPC分类号： H01L21/324 , H01J37/16 , H01L21/67 , H01J37/317
CPC分类号： H01L21/67115 , H01J37/3171 , H01J2237/2001 , H01L21/26506 , H01L21/67201 , H01L21/67213 , H05B3/0047
摘要： A semiconductor manufacturing system or process, such as an ion implantation system, apparatus and method, including a component or step for heating a semiconductor workpiece are provided. An optical heat source emits light energy to heat the workpiece. The optical heat source is configured to provide minimal or reduced emission of non-visible wavelengths of light energy and emit light energy at a wavelength in a maximum energy light absorption range of the workpiece.
摘要翻译：提供了半导体制造系统或工艺，例如离子注入系统，装置和方法，包括用于加热半导体工件的部件或步骤。光学热源发射光能以加热工件。光学热源被配置为提供最小或减少的不可见波长的光能的发射，并在工件的最大能量光吸收范围内的波长处发射光能。

6. 发明授权

US08692215B2 Heated rotary seal and bearing for chilled ion implantation system 有权
标题翻译：加热旋转密封和轴承用于冷冻离子注入系统
公开(公告)号：US08692215B2
公开(公告)日：2014-04-08
申请号：US13116661
申请日：2011-05-26
申请人： William D. Lee , William DiVergilio , Steve Drummond
发明人： William D. Lee , William DiVergilio , Steve Drummond
IPC分类号： H01J37/20 , H01J29/00
CPC分类号： H01J37/20 , H01J37/3171 , H01J2237/166 , H01J2237/2001 , H01J2237/20214
摘要： A workpiece scanning system is provided having a scan arm that rotates about a first axis and a chilled end effector rotatably coupled to the scan arm about a second axis for selectively securing a workpiece. The chilled end effector has a clamping plate and one or more cooling mechanisms for cooling the clamping plate. A bearing is positioned along the second axis and rotatably couples the end effector to the scan arm, and a seal is positioned along the second axis to provide a pressure barrier between an external environment and an internal environment. One or more of the bearing and seal can have a ferrofluid associated therewith. A heater assembly is positioned proximate to the bearing and seal, wherein the heater assembly selectively provides a predetermined amount of heat to the bearing and seal, therein increasing a propensity of the end effector to rotate about the second axis.
摘要翻译：提供了一种工件扫描系统，其具有围绕第一轴线旋转的扫描臂以及围绕第二轴可旋转地联接到扫描臂的冷冻末端执行器，用于选择性地固定工件。冷冻末端执行器具有夹紧板和用于冷却夹紧板的一个或多个冷却机构。轴承沿着第二轴线定位并且将端部执行器可旋转地联接到扫描臂，并且沿着第二轴线定位密封件以在外部环境和内部环境之间提供压力障碍。轴承和密封件中的一个或多个可以具有与其相关联的铁磁流体。加热器组件靠近轴承和密封定位，其中加热器组件选择性地向轴承和密封提供预定量的热量，其中增加端部执行器围绕第二轴线旋转的倾向。

7. 发明申请

US20110291022A1 Post Implant Wafer Heating Using Light 审中-公开
标题翻译：后植入晶片加热使用光
公开(公告)号：US20110291022A1
公开(公告)日：2011-12-01
申请号：US12944407
申请日：2010-11-11
申请人： William D. Lee , Marvin Farley , William DiVergilio
发明人： William D. Lee , Marvin Farley , William DiVergilio
IPC分类号： H01J37/20 , H01J37/18 , H01J37/08
CPC分类号： H01L21/67213 , H01J37/185 , H01J37/3171 , H01J2237/006 , H01J2237/184 , H01J2237/2001 , H01J2237/24585 , H01L21/67115 , H01L21/67201 , H01L21/67248
摘要： An ion implantation system, method, and apparatus for abating condensation in a cold ion implant is provided. An ion implantation apparatus is configured to provide ions to a workpiece positioned in a process chamber. A sub-ambient temperature chuck supports the workpiece during an exposure of the workpiece to the plurality of ions. The sub-ambient temperature chuck is further configured to cool the workpiece to a processing temperature, wherein the process temperature is below a dew point of an external environment. A load lock chamber isolates a process environment of the process chamber from the external environment. A light source provides a predetermined wavelength of electromagnetic radiation to the workpiece concurrent with the workpiece residing within the load lock chamber, wherein the predetermined wavelength or range of wavelengths is associated with a maximum radiant energy absorption range of the workpiece, wherein the light source is configured to selectively heat the workpiece.
摘要翻译：提供了一种用于减少冷离子注入中的冷凝的离子注入系统，方法和装置。离子注入装置被配置为向位于处理室中的工件提供离子。在工件暴露于多个离子的过程中，亚环境温度卡盘支撑工件。次环境温度卡盘进一步构造成将工件冷却至加工温度，其中工艺温度低于外部环境的露点。加载锁定室将处理室的处理环境与外部环境隔离。光源向驻留在负载锁定室内的工件提供与工件同时的预定波长的电磁辐射，其中预定波长或波长范围与工件的最大辐射能吸收范围相关联，其中光源是被配置为选择性地加热所述工件。

8. 发明申请

US20050045835A1 Unipolar electrostatic quadrupole lens and switching methods for charged beam transport 有权
标题翻译：单极静电四极杆透镜和带电束传输的切换方法
公开(公告)号：US20050045835A1
公开(公告)日：2005-03-03
申请号：US10654168
申请日：2003-09-03
申请人： William DiVergilio , Youngzhang Huang
发明人： William DiVergilio , Youngzhang Huang
IPC分类号： H01J37/12 , H01J37/153 , H01J37/317
CPC分类号： H01J37/12 , H01J37/153 , H01J37/3171 , H01J2237/04735 , H01J2237/04737 , H01J2237/04924
摘要： The present invention mitigates loss of beam current, particularly for low energy ion beam transport. The present invention employs unipolar electrostatic quadrupole lenses instead of conventional dual positive and negative potential (bipolar) quadrupole lenses as beam focusing elements within a linear accelerator, reducing beam current losses therein. In addition, the present invention also includes systems and methods for switching between bipolar wiring and unipolar wiring.
摘要翻译：本发明减轻了束流的损失，特别是对于低能离子束传输。本发明采用单极静电四极透镜，而不是常规的双正极和负极（双极）四极透镜作为线性加速器内的束聚焦元件，减少了其中的束电流损耗。此外，本发明还包括用于在双极布线和单极布线之间切换的系统和方法。

9. 发明授权

US08760054B2 Microwave plasma electron flood 有权
标题翻译：微波等离子体电子泛滥
公开(公告)号：US08760054B2
公开(公告)日：2014-06-24
申请号：US13010888
申请日：2011-01-21
申请人： William DiVergilio , Bo Vanderberg
发明人： William DiVergilio , Bo Vanderberg
IPC分类号： H05H1/46
CPC分类号： H05H1/46 , H01J37/026 , H01J37/3171 , H05H2001/4622
摘要： A method and apparatus is provided for generating a plasma electron flood using microwave radiation. In one embodiment, a microwave PEF apparatus is configured to generate a magnetic field that rapidly decays over a PEF cavity, resulting in a static magnetic field having a high magnetic field strength near one side (e.g., “bottom”) of the PEF cavity and a low magnetic field strength (e.g., substantially zero) near the opposite side (e.g., “top”) of the PEF comprising an elongated extraction slit. In one particular embodiment, the one or more permanent magnets are located at a position that is spatially opposed to the location of the elongated extraction slit to achieve the rapidly decaying magnetic field.The magnetic field results in an electron cyclotron frequency in a region of the cavity equal to or approximately equal to a microwave radiation frequency so that plasma is generated to diffuse through the extraction apertures.
摘要翻译：提供了一种使用微波辐射产生等离子体电子泛洪的方法和装置。在一个实施例中，微波PEF装置被配置为产生在PEF空腔上快速衰减的磁场，导致在PEF空腔的一侧（例如“底部”）附近具有高磁场强度的静态磁场，靠近PEF的相对侧（例如，“顶部”）附近的低磁场强度（例如，基本为零），包括细长的提取狭缝。在一个特定实施例中，一个或多个永磁体位于与细长抽取狭缝的位置空间相对的位置，以实现快速衰减的磁场。磁场导致在空腔区域中的电子回旋加速器频率等于或近似等于微波辐射频率，使得产生等离子体以扩散通过提取孔径。

10. 发明授权

US07453074B2 Ion implanter with ionization chamber electrode design 有权
标题翻译：离子注入机与电离室电极设计
公开(公告)号：US07453074B2
公开(公告)日：2008-11-18
申请号：US11294975
申请日：2005-12-06
申请人： Edward C. Eisner , William DiVergilio
发明人： Edward C. Eisner , William DiVergilio
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/08 , H01J37/3171
摘要： An ion implanter includes an ion source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. An ion source includes a ionization chamber and an ionization chamber electrode defining an ionization chamber aperture, wherein the ionization chamber electrode includes a raised portion for generating substantially uniform electric fields in the region adjacent the ionization chamber electrode.
摘要翻译：离子注入机包括用于产生沿着束线移动的离子束的离子源和真空或注入室，其中诸如硅晶片的工件被定位成与离子束相交以便通过所述工件的表面离子注入离子束。离子源包括电离室和限定电离室孔的电离室电极，其中电离室电极包括用于在邻近电离室电极的区域中产生基本均匀的电场的凸起部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式