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1. 发明授权

US07029967B2 Silicide method for CMOS integrated circuits 有权
标题翻译： CMOS集成电路的硅化法
公开(公告)号：US07029967B2
公开(公告)日：2006-04-18
申请号：US10896599
申请日：2004-07-21
申请人： Song Zhao , Sue E. Crank , Amitava Chatterjee , Kaiping Liu , Jiong-Ping Lu , Donald S. Miles , Duofeng Yue , Lance S. Robertson
发明人： Song Zhao , Sue E. Crank , Amitava Chatterjee , Kaiping Liu , Jiong-Ping Lu , Donald S. Miles , Duofeng Yue , Lance S. Robertson
IPC分类号： H01L21/8238 , H01L21/331
CPC分类号： H01L21/823814 , H01L21/26506 , H01L21/28518 , H01L21/823835 , H01L29/665
摘要： A method for forming metal silicide regions in source and drain regions (160, 170) is described. Prior to the thermal annealing of the source and drain regions (160, 170), germanium is implanted into a semiconductor substrate adjacent to sidewall structures (90, 95) formed adjacent gate structures (60, 70). The position of the implanted germanium species in the semiconductor substrate will overlap the source and drain regions (160, 170). Following thermal annealing of the source and drain regions (160, 170), the implanted germanium prevents the formation of metal silicide spikes.
摘要翻译：描述了在源区和漏区（160,170）中形成金属硅化物区域的方法。在源极和漏极区域（160,170）的热退火之前，将锗注入到与栅极结构（60,70）相邻形成的侧壁结构（90,95）附近的半导体衬底中。植入的锗物质在半导体衬底中的位置将与源区和漏区（160,170）重叠。在源极和漏极区域（160,170）的热退火之后，注入的锗防止形成金属硅化物尖峰。

2. 发明申请

US20060019478A1 Silicide method for CMOS integrated circuits 有权
公开(公告)号：US20060019478A1
公开(公告)日：2006-01-26
申请号：US10896599
申请日：2004-07-21
申请人： Song Zhao , Sue Crank , Amitava Chatterjee , Kaiping Liu , Jiong-Ping Lu , Donald Miles , Duofeng Yue , Lance Robertson
发明人： Song Zhao , Sue Crank , Amitava Chatterjee , Kaiping Liu , Jiong-Ping Lu , Donald Miles , Duofeng Yue , Lance Robertson
IPC分类号： H01L21/28
CPC分类号： H01L21/823814 , H01L21/26506 , H01L21/28518 , H01L21/823835 , H01L29/665
摘要： A method for forming metal silicide regions in source and drain regions (160, 170) is described. Prior to the thermal annealing of the source and drain regions (160, 170), germanium is implanted into a semiconductor substrate adjacent to sidewall structures (90, 95) formed adjacent gate structures (60, 70). The position of the implanted germanium species in the semiconductor substrate will overlap the source and drain regions (160, 170). Following thermal annealing of the source and drain regions (160, 170), the implanted germanium prevents the formation of metal silicide spikes.

3. 发明授权

US07216310B2 Design method and system for optimum performance in integrated circuits that use power management 有权
标题翻译：使用电源管理的集成电路中的最佳性能设计方法和系统
公开(公告)号：US07216310B2
公开(公告)日：2007-05-08
申请号：US10993815
申请日：2004-11-19
申请人： Amitava Chatterjee , David Barry Scott , Theodore W. Houston , Song Zhao , Shaoping Tang , Zhiqiang Wu
发明人： Amitava Chatterjee , David Barry Scott , Theodore W. Houston , Song Zhao , Shaoping Tang , Zhiqiang Wu
IPC分类号： G06F17/50 , G11C5/14 , H03K3/01 , G05F1/10
CPC分类号： G06F17/505
摘要： The present invention provides a method (100) of designing a circuit. The method comprises specifying (105) a design parameter for memory transistors and logic transistors and selecting (110) a test retention-mode bias voltage for the memory transistors. The method further comprises determining (115) a first relationship of a retention-mode leakage current and the design parameter at the test retention-mode bias voltage and obtaining (120) a second relationship of an active-mode drive current and the design parameter. The first and second relationships are used (125) to assess whether there is a range of values of the design parameter where the retention-mode leakage current and the active-mode drive current are within a predefined circuit specification. The method also includes adjusting (130) the test retention-mode bias voltage and repeating the determining and the using if the retention-mode total leakage current or the active-mode drive current is outside of the predefined circuit specification.
摘要翻译：本发明提供一种设计电路的方法（100）。该方法包括指定（105）存储晶体管和逻辑晶体管的设计参数，并选择（110）存储晶体管的测试保持模式偏置电压。所述方法还包括在所述测试保持模式偏置电压下确定（115）保持模式漏电流和所述设计参数的第一关系，并获得（120）所述有源模式驱动电流与所述设计参数的第二关系。使用第一和第二关系（125）来评估是否存在保持模式漏电流和有源模式驱动电流在预定电路规范内的设计参数值的范围。该方法还包括调整（130）测试保持模式偏置电压，并重复确定和使用如果保持模式总泄漏电流或有源模式驱动电流超出预定电路规范。

4. 发明申请

US20050149887A1 Design method and system for optimum performance in integrated circuits that use power management 有权
标题翻译：使用电源管理的集成电路中的最佳性能设计方法和系统
公开(公告)号：US20050149887A1
公开(公告)日：2005-07-07
申请号：US10993815
申请日：2004-11-19
申请人： Amitava Chatterjee , David Scott , Theodore Houston , Song Zhao , Shaoping Tang , Zhiqiang Wu
发明人： Amitava Chatterjee , David Scott , Theodore Houston , Song Zhao , Shaoping Tang , Zhiqiang Wu
IPC分类号： G06F17/50
CPC分类号： G06F17/505
摘要： The present invention provides a method (100) of designing a circuit. The method comprises specifying (105) a design parameter for memory transistors and logic transistors and selecting (110) a test retention-mode bias voltage for the memory transistors. The method further comprises determining (115) a first relationship of a retention-mode leakage current and the design parameter at the test retention-mode bias voltage and obtaining (120) a second relationship of an active-mode drive current and the design parameter. The first and second relationships are used (125) to assess whether there is a range of values of the design parameter where the retention-mode leakage current and the active-mode drive current are within a predefined circuit specification. The method also includes adjusting (130) the test retention-mode bias voltage and repeating the determining and the using if the retention-mode total leakage current or the active-mode drive current is outside of the predefined circuit specification.
摘要翻译：本发明提供一种设计电路的方法（100）。该方法包括指定（105）存储晶体管和逻辑晶体管的设计参数，并选择（110）存储晶体管的测试保持模式偏置电压。所述方法还包括在所述测试保持模式偏置电压下确定（115）保持模式漏电流和所述设计参数的第一关系，并获得（120）所述有源模式驱动电流与所述设计参数的第二关系。使用第一和第二关系（125）来评估是否存在保持模式漏电流和有源模式驱动电流在预定电路规范内的设计参数值的范围。该方法还包括调整（130）测试保持模式偏置电压，并重复确定和使用如果保持模式总泄漏电流或有源模式驱动电流超出预定电路规范。

5. 发明授权

US08993575B2 [1,3,4] oxadiazole derivative and application thereof 有权
标题翻译： [1,3,4]恶二唑衍生物及其应用
公开(公告)号：US08993575B2
公开(公告)日：2015-03-31
申请号：US14008693
申请日：2012-04-01
申请人： Guisen Zhang , Yin Chen , Xiangqing Xu , Bifeng Liu , Xiaojun Feng , Song Zhao , Shicheng Liu , Minquan Yu , Yu Lan , Yinli Qiu
发明人： Guisen Zhang , Yin Chen , Xiangqing Xu , Bifeng Liu , Xiaojun Feng , Song Zhao , Shicheng Liu , Minquan Yu , Yu Lan , Yinli Qiu
IPC分类号： A61K31/496 , A61K31/454 , A61K31/4545 , C07D413/14 , C07D417/12 , C07D417/14
CPC分类号： C07D417/12 , C07D413/14 , C07D417/14
摘要： The present invention belongs to the medicinal chemistry field, and specifically discloses a [1,3,4]oxadiazole derivative with the structure of general formula (I) and pharmaceutically acceptable salt thereof. The compound can be used to prepare a medicine for preventing or treating a disease of the central nervous system.
摘要翻译：本发明属于药物化学领域，具体公开了具有通式（I）结构的[1,3,4]恶二唑衍生物及其药学上可接受的盐。该化合物可用于制备用于预防或治疗中枢神经系统疾病的药物。

6. 发明授权

US08717405B2 Method and device for generating 3D panoramic video streams, and videoconference method and device 有权
标题翻译：用于生成3D全景视频流的方法和设备，以及视频会议方法和设备
公开(公告)号：US08717405B2
公开(公告)日：2014-05-06
申请号：US13172193
申请日：2011-06-29
申请人： Kai Li , Yuan Liu , Jing Wang , Honghong Su , Song Zhao
发明人： Kai Li , Yuan Liu , Jing Wang , Honghong Su , Song Zhao
IPC分类号： H04N7/14
CPC分类号： H04N21/4223 , H04N7/15 , H04N13/243 , H04N21/42203 , H04N21/4788
摘要： A method and a device for generating 3-dimensional (3D) panoramic video streams, a videoconference method, and a videoconference device are disclosed. The method includes: obtaining depth information of at least two video images; obtaining image data in multiple depth positions from a corresponding video image according to the depth information of each video image; stitching data of the video images according to the obtained image data in multiple depth positions, and generating 3D panoramic video streams. The technical solution of the present invention provides users with high-resolution 3D panoramic seamless telepresence conference video images based on different display modes of different display devices.
摘要翻译：公开了一种用于产生三维（3D）全景视频流的方法和装置，视频会议方法和视频会议装置。该方法包括：获取至少两个视频图像的深度信息; 根据每个视频图像的深度信息从相应的视频图像获得多个深度位置的图像数据; 根据所获得的多个深度位置的图像数据拼接视频图像的数据，并生成3D全景视频流。本发明的技术方案为用户提供了基于不同显示设备的不同显示模式的高分辨率3D全景无线远程呈现会议视频图像。

7. 发明授权

US08355062B2 Method and apparatus for processing image 有权
标题翻译：图像处理方法及装置
公开(公告)号：US08355062B2
公开(公告)日：2013-01-15
申请号：US13189058
申请日：2011-07-22
申请人： Song Zhao , Jing Wang , Yuan Liu , Kai Li
发明人： Song Zhao , Jing Wang , Yuan Liu , Kai Li
IPC分类号： H04N5/262 , G06K9/32
CPC分类号： G06T15/20 , G06T3/0012
摘要： A method for processing an image includes: obtaining depth values of an image including a target region and a non-target region; obtaining a scaling ratio of the target region; obtaining a scaling ratio of the non-target region according to the depth values of the image and the scaling ratio of the target region; scaling respectively the target region and the non-target region according to the scaling ratio of the target region and the scaling ratio of the non-target region, and obtaining a scaled image.
摘要翻译：一种处理图像的方法包括：获得包括目标区域和非目标区域的图像的深度值; 获得目标区域的缩放比例; 根据图像的深度值和目标区域的缩放比例获得非目标区域的缩放比例; 根据目标区域的缩放比率和非目标区域的缩放比例，分别对目标区域和非目标区域进行缩放，并获得缩放图像。

8. 发明申请

US20120146054A1 MOSFET WITH SOURCE SIDE ONLY STRESS 有权
标题翻译： MOSFET，源极只有应力
公开(公告)号：US20120146054A1
公开(公告)日：2012-06-14
申请号：US13288170
申请日：2011-11-03
申请人： Samuel Zafar Nawaz , Shaofeng Yu , Jeffrey E. Brighton , Song Zhao
发明人： Samuel Zafar Nawaz , Shaofeng Yu , Jeffrey E. Brighton , Song Zhao
IPC分类号： H01L29/772 , H01L21/336 , H01L21/20
CPC分类号： H01L29/7848 , H01L29/165 , H01L29/66636 , H01L29/66659 , H01L29/7835
摘要： An integrated circuit contains a transistor with a stress enhancement region on the source side only. In a DeMOS transistor, forming the stress enhancement region on the source side only and not forming a stress enhancement region in the drain extension increases the resistance of the drain extension region enabling formation of a DeMOS transistor with reduced area. In a MOS transistor, by forming the stress enhancement region on the source side only and eliminating the stress enhancement region from the drain side, transistor leakage is reduced and CHC reliability improved.
摘要翻译：集成电路仅包含源极侧的应力增强区域的晶体管。在DeMOS晶体管中，仅在源极上形成应力增强区域并且在漏极延伸中不形成应力增强区域增加了漏极延伸区域的电阻，从而能够形成减小面积的DeMOS晶体管。在MOS晶体管中，通过在源极侧形成应力增强区域，消除来自漏极侧的应力增强区域，降低了晶体管泄漏，提高了CHC可靠性。

9. 发明授权

US09315496B2 Benzopyrone derivative and use thereof 有权
标题翻译：苯并吡喃酮衍生物及其用途
公开(公告)号：US09315496B2
公开(公告)日：2016-04-19
申请号：US14009581
申请日：2012-04-06
申请人： Guisen Zhang , Yin Chen , Xiangqing Xu , Bifeng Liu , Xin Liu , Song Zhao , Shicheng Liu , Minquan Yu , Heng Zhang , Xinghua Liu
发明人： Guisen Zhang , Yin Chen , Xiangqing Xu , Bifeng Liu , Xin Liu , Song Zhao , Shicheng Liu , Minquan Yu , Heng Zhang , Xinghua Liu
IPC分类号： A61K31/496 , A61K31/454 , C07D405/12 , C07D405/14 , C07D413/12 , C07D413/14 , C07D417/12 , C07D417/14
CPC分类号： C07D417/12 , A61K31/454 , A61K31/496 , C07D405/12 , C07D405/14 , C07D413/12 , C07D413/14 , C07D417/14
摘要： The present invention relates to the field of pharmaceutical chemistry, and in particular, to a benzopyrone derivative and a use thereof. The benzopyrone derivative is compound having a structure of formula (I) or a pharmaceutically acceptable salt thereof. It has been found by experiments that, this type of compounds is useful in prevention or treatment of neuropsychical diseases.
摘要翻译：本发明涉及药物化学领域，特别涉及苯并吡喃酮衍生物及其应用。苯并吡喃酮衍生物是具有式（I）结构的化合物或其药学上可接受的盐。通过实验发现，这种类型的化合物可用于预防或治疗神经精神疾病。

10. 发明申请

US20110273594A1 METHOD AND APPARATUS FOR PROCESSING IMAGE 有权
标题翻译：用于处理图像的方法和装置
公开(公告)号：US20110273594A1
公开(公告)日：2011-11-10
申请号：US13189058
申请日：2011-07-22
申请人： Song Zhao , Jing Wang , Yuan Liu , Kai Li
发明人： Song Zhao , Jing Wang , Yuan Liu , Kai Li
IPC分类号： H04N5/262 , G06K9/32
CPC分类号： G06T15/20 , G06T3/0012
摘要： A method for processing an image includes: obtaining depth values of an image including a target region and a non-target region; obtaining a scaling ratio of the target region; obtaining a scaling ratio of the non-target region according to the depth values of the image and the scaling ratio of the target region; scaling respectively the target region and the non-target region according to the scaling ratio of the target region and the scaling ratio of the non-target region, and obtaining a scaled image.
摘要翻译：一种处理图像的方法包括：获得包括目标区域和非目标区域的图像的深度值; 获得目标区域的缩放比例; 根据图像的深度值和目标区域的缩放比例获得非目标区域的缩放比例; 根据目标区域的缩放比率和非目标区域的缩放比例，分别对目标区域和非目标区域进行缩放，并获得缩放图像。

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