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11. 发明授权

US09653099B2 Information storage apparatus and method 有权
公开(公告)号：US09653099B2
公开(公告)日：2017-05-16
申请号：US15078594
申请日：2016-03-23
申请人： Huawei Technologies Co., Ltd.
发明人： Yinyin Lin , Yarong Fu , Kai Yang , Wei Yang , Yuangang Wang , Junfeng Zhao
IPC分类号： G11B5/00 , G11C11/02 , G11B5/09 , G11B5/02 , G11C11/15 , G11C11/56 , G11C19/08
CPC分类号： G11B5/09 , G11B5/02 , G11B2005/0002 , G11C11/02 , G11C11/15 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C19/0808 , G11C19/0841
摘要： An information storage apparatus includes a magnetic track, a writer, and a reader, where the magnetic track includes a number of magnetic domains. Each magnetic domain is divided into at least two magnetic regions, and the writer is disposed on the magnetic track, and configured to write information to the at least two magnetic regions of each magnetic domain. The reader, disposed on the magnetic track, is configured to read the written information from the at least two magnetic regions. Therefore, multiple pieces of valid information are written to one magnetic domain of the magnetic track, thereby increasing storage density of the magnetic track, and expanding a storage capacity of the storage apparatus.

12. 发明授权

US09602102B2 Magnetic logic device, magnetic logic circuit, and magnetic memory 有权
公开(公告)号：US09602102B2
公开(公告)日：2017-03-21
申请号：US14861199
申请日：2015-09-22
申请人： Kabushiki Kaisha Toshiba
发明人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
IPC分类号： G11C11/02 , H03K19/00 , H03K19/18 , H03K19/20 , G11C11/16
CPC分类号： H03K19/0008 , G11C11/161 , G11C11/165 , G11C11/1675 , G11C11/18 , H03K19/18 , H03K19/20
摘要： One embodiment provides a magnetic logic device including: a first conductive thin wire; a second conductive thin wire; and a third conductive thin wire that electrically connects the first conductive thin wire and the second conductive thin wire. The first to third conductive thin wires commonly includes: a first non-magnetic metal layer; a second non-magnetic metal layer; and a magnetic metal layer sandwiched between the first non-magnetic metal layer and the second non-magnetic metal layer.

13. 发明授权

US09287323B2 Perpendicular magnetoresistive elements 有权
标题翻译：垂直磁阻元件
公开(公告)号：US09287323B2
公开(公告)日：2016-03-15
申请号：US14149757
申请日：2014-01-07
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L27/22 , G11C11/02 , G11C11/16 , H01L43/08 , H01L43/10
CPC分类号： H01L27/224 , G11C11/02 , G11C11/161 , H01L27/22 , H01L27/222 , H01L43/08 , H01L43/10
摘要： A perpendicular magnetoresistive element comprises anovel buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the tunnel barrier layer is provided, wherein at least the portion of the buffer layer interfacing to the recording layer contains a rocksalt crystal structure having the (100) plane parallel to the substrate plane and at least a portion of the buffer layer comprises a doped element having conductivity enhancement and the perpendicular resistance of the buffer layer is relatively small than that of the tunnel barrier layer. The invention preferably includes materials, configurations and processes of perpendicular magnetoresistive elements suitable for perpendicular spin-transfer torque MRAM applications.
摘要翻译：垂直磁阻元件包括设置在记录层的与设置有隧道势垒层的记录层的表面相对的表面上的缓冲层，其中至少与记录层相接的缓冲层的部分包含具有（100）平面平行于衬底平面的岩盐晶体结构，并且缓冲层的至少一部分包括具有导电性增强的掺杂元素，并且缓冲层的垂直电阻相对于隧道势垒层的垂直电阻小。本发明优选地包括适用于垂直旋转传递转矩MRAM应用的垂直磁阻元件的材料，配置和工艺。

14. 发明授权

US09275913B2 Memory arrays for both good data retention and low power operation 有权
标题翻译：存储器阵列，用于良好的数据保留和低功耗操作
公开(公告)号：US09275913B2
公开(公告)日：2016-03-01
申请号：US14133555
申请日：2013-12-18
申请人： Intermolecular, Inc.
发明人： Yun Wang , Imran Hashim
IPC分类号： H01L27/115 , H01L21/66 , G11C16/10 , G11C11/02 , H01L27/24 , G11C11/56 , H01L27/10 , H01L45/00 , G11C13/00
CPC分类号： H01L22/14 , G11C11/005 , G11C11/02 , G11C11/5685 , G11C13/0004 , G11C13/0007 , G11C13/0035 , G11C13/0069 , G11C16/10 , G11C2013/0071 , G11C2213/79 , H01L27/101 , H01L27/2463 , H01L45/06 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/147
摘要： Designs and programming schemes can be used to form memory arrays having low power, high density and good data retention. High resistance interconnect lines can be used to partition the memory array can be partitioned into areas of high data retention and areas of low data retention. Variable gate voltages can be used in control transistors to store memory values having different data retention characteristics.
摘要翻译：可以使用设计和编程方案来形成具有低功率，高密度和良好数据保留的存储器阵列。高电阻互连线可用于分割存储阵列，可分为高数据保留区域和低数据保留区域。控制晶体管中可以使用可变栅极电压来存储具有不同数据保持特性的存储器值。

15. 发明授权

US09257184B2 Nonvolatile memory systems with embedded fast read and write memories 有权
公开(公告)号：US09257184B2
公开(公告)日：2016-02-09
申请号：US14335160
申请日：2014-07-18
申请人： G. R. Mohan Rao
发明人： G. R. Mohan Rao
IPC分类号： G11C14/00 , G11C16/06 , G11C7/00 , G11C16/10 , G11C7/10 , G11C11/02 , G11C11/22 , G11C13/00
CPC分类号： G06F12/10 , G06F2212/205 , G06F2212/214 , G11C7/1006 , G11C7/1084 , G11C11/02 , G11C11/225 , G11C13/0021 , G11C14/00 , G11C14/0018 , G11C16/06 , G11C16/10
摘要： A nonvolatile memory system is described with novel architecture coupling nonvolatile storage memory with random access volatile memory. New commands are included to enhance the read and write performance of the memory system.

16. 发明申请

US20160026524A1 MEMORY DEVICE 审中-公开
标题翻译：内存设备
公开(公告)号：US20160026524A1
公开(公告)日：2016-01-28
申请号：US14610638
申请日：2015-01-30
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Katsuhiko HOYA
IPC分类号： G06F11/10 , G11C7/06 , G11C7/12 , G11C11/02
CPC分类号： G11C7/12 , G06F11/1048 , G11C7/06 , G11C11/16 , G11C13/0033
摘要： A memory device includes memory elements and a controller. The memory controller executes a process including a first section and a second section in response to a refresh command, detects an error of data stored in the memory elements in the first section, and writes correct data in a memory element storing data with the detected error in a second section, the second section being variable in accordance with a time to write the correct data.
摘要翻译：存储器件包括存储器元件和控制器。存储器控制器响应于刷新命令执行包括第一部分和第二部分的处理，检测存储在第一部分中的存储器元件中的数据的错误，并将正确的数据写入存储有检测到的错误的数据的存储元件在第二部分中，第二部分根据写入正确数据的时间而变化。

17. 发明授权

US09165585B2 Magnetoresistive element including a nitrogen-containing buffer layer 有权
标题翻译：磁阻元件包括含氮缓冲层
公开(公告)号：US09165585B2
公开(公告)日：2015-10-20
申请号：US13235237
申请日：2011-09-16
申请人： Eiji Kitagawa , Tadaomi Daibou , Tadashi Kai , Toshihiko Nagase , Kenji Noma , Hiroaki Yoda
发明人： Eiji Kitagawa , Tadaomi Daibou , Tadashi Kai , Toshihiko Nagase , Kenji Noma , Hiroaki Yoda
IPC分类号： G11C11/02 , G11B5/66 , G01R33/09 , H01F10/30 , G11C11/16
CPC分类号： H01L43/02 , G01R33/091 , G01R33/093 , G11B5/66 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/30 , H01L27/228 , H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes a recording layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided. The recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer. The first buffer layer comprises a nitrogen compound.
摘要翻译：根据一个实施例，磁阻元件包括具有可变磁化方向的记录层，具有不变磁化方向的参考层，设置在记录层和参考层之间的中间层，以及设置在记录层的表面上的第一缓冲层该记录层与设置有中间层的记录层的表面相对。记录层包括设置在中间层的侧面并且包含CoFe作为主要成分的第一磁性层和设置在第一缓冲层的侧面并且包含CoFe作为主要成分的第二磁性层，第一磁性层中的Fe浓度高于第二磁性层中的Fe浓度。第一缓冲层包含氮化合物。

18. 发明授权

US09019777B2 Nonvolatile semiconductor memory device and operating method of the same 有权
标题翻译：非易失性半导体存储器件及其操作方法相同
公开(公告)号：US09019777B2
公开(公告)日：2015-04-28
申请号：US13787633
申请日：2013-03-06
申请人： Kabushiki Kaisha Toshiba
发明人： Tsukasa Nakai , Jyunichi Ozeki , Nobutoshi Aoki
IPC分类号： G11C11/00 , G11C11/02 , G11C5/06 , G11C13/00 , G11C11/16 , G11C14/00 , G11C7/10 , G11C11/56
CPC分类号： G11C11/16 , G11C7/1006 , G11C11/005 , G11C11/02 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C13/0097 , G11C14/0045 , G11C2213/72 , H01L27/224 , H01L27/228 , H01L27/2409 , H01L27/2436 , H01L43/08 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1675
摘要： According to one embodiment, a nonvolatile semiconductor memory device comprises a semiconductor substrate, and a memory cell which is arranged on the semiconductor substrate and comprises a variable resistance element. The variable resistance element comprises a laminated structure including a phase-change element which has at least two different crystalline resistance states by varying a crystalline state, and a magnetoresistive element which has at least two different magnetization resistance states by varying a magnetization state, and applies or does not apply a magnetic field to the phase-change element in accordance with the magnetization state.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括半导体衬底和布置在半导体衬底上并包括可变电阻元件的存储单元。可变电阻元件包括层压结构，其包括通过改变结晶态具有至少两种不同的晶体电阻状态的相变元件和通过改变磁化状态具有至少两种不同的耐磁化状态的磁阻元件，并且应用或者不根据磁化状态对相变元件施加磁场。

19. 发明授权

US08982647B2 Resistive random access memory equalization and sensing 有权
标题翻译：电阻式随机存取存储器均衡和检测
公开(公告)号：US08982647B2
公开(公告)日：2015-03-17
申请号：US13676943
申请日：2012-11-14
申请人： Crossbar, Inc.
发明人： Hagop Nazarian , Sang Nguyen
IPC分类号： G11C7/00 , G11C7/12 , G11C11/02 , G11C11/22 , G11C11/34 , G11C5/12 , G11C11/16 , G11C7/06 , G11C13/00
CPC分类号： G11C7/12 , G11C5/12 , G11C7/062 , G11C11/02 , G11C11/1673 , G11C11/2297 , G11C11/34 , G11C13/0004 , G11C13/0007 , G11C13/0023 , G11C13/0026 , G11C13/0028 , G11C13/0038 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C2013/0054 , G11C2213/78 , Y10T29/41
摘要： Providing for a two-terminal memory architecture that can mitigate sneak path current in conjunction with memory operations is described herein. By way of example, a voltage mimicking mechanism can be employed to dynamically drive un-selected bitlines of the memory architecture at a voltage observed by a selected bitline. According to these aspects, changes observed by the selected bitline can be applied to the un-selected bitlines as well. This can help reduce or avoid voltage differences between the selected bitline and the un-selected bitlines, thereby reducing or avoiding sneak path currents between respective bitlines of the memory architecture. Additionally, an input/output based configuration is provided to facilitate reduced sneak path current according to additional aspects of the subject disclosure.
摘要翻译：本文描述了提供可以减轻潜行路径电流与存储器操作相结合的两终端存储器架构。作为示例，可以采用电压模拟机构来以所选择的位线观察到的电压来动态地驱动存储器架构的未选定位线。根据这些方面，所选位线观察到的变化也可以应用于未选定的位线。这可以帮助减少或避免所选择的位线与未选择的位线之间的电压差，从而减少或避免存储架构的相应位线之间的潜行路径电流。另外，提供了基于输入/输出的配置，以根据本发明的另外的方面来促进减少的潜行路径电流。

20. 发明授权

US08830735B2 Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film 有权
标题翻译：磁存储器，包括具有垂直磁各向异性膜的数据记录层的存储单元
公开(公告)号：US08830735B2
公开(公告)日：2014-09-09
申请号：US13304083
申请日：2011-11-23
申请人： Eiji Kariyada , Katsumi Suemitsu , Hironobu Tanigawa , Kaoru Mori , Tetsuhiro Suzuki , Kiyokazu Nagahara , Yasuaki Ozaki , Norikazu Ohshima
发明人： Eiji Kariyada , Katsumi Suemitsu , Hironobu Tanigawa , Kaoru Mori , Tetsuhiro Suzuki , Kiyokazu Nagahara , Yasuaki Ozaki , Norikazu Ohshima
IPC分类号： G11B5/66 , G11C11/16 , G01R33/09 , G11C11/02 , G11C11/14 , G11C11/15
CPC分类号： H01L43/10 , G01R33/091 , G01R33/098 , G11C11/02 , G11C11/14 , G11C11/15 , G11C11/161 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A magnetic memory includes: a magnetization fixed layer having perpendicular magnetic anisotropy, a magnetization direction of the magnetization fixed layer being fixed; an interlayer dielectric; an underlayer formed on upper faces of the magnetization fixed layer and the interlayer dielectric; and a data recording layer formed on an upper face of the underlayer and having perpendicular magnetic anisotropy. The underlayer includes: a first magnetic underlayer; and a non-magnetic underlayer formed on the first magnetic underlayer. The first magnetic underlayer is formed with such a thickness that the first magnetic underlayer does not exhibit in-plane magnetic anisotropy in a portion of the first magnetic underlayer formed on the interlayer dielectric.
摘要翻译：磁存储器包括：具有垂直磁各向异性的磁化固定层，磁化固定层的磁化方向固定; 层间电介质; 形成在磁化固定层和层间电介质的上表面上的底层; 以及形成在下层的上表面上并具有垂直磁各向异性的数据记录层。底层包括：第一磁性底层; 以及形成在第一磁性底层上的非磁性底层。形成第一磁性底层，使得第一磁性底层在形成于层间电介质上的第一磁性底层的一部分中不具有面内的磁各向异性。

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