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21. 发明授权

US5737117A Second harmonic generation element and a process for producing the same 失效
标题翻译：二次谐波发生元件及其制造方法
公开(公告)号：US5737117A
公开(公告)日：1998-04-07
申请号：US628252
申请日：1996-04-05
申请人： Minoru Imaeda , Katsuhiro Imai , Tatsuo Kawaguchi , Takashi Yoshino , Akihiko Honda
发明人： Minoru Imaeda , Katsuhiro Imai , Tatsuo Kawaguchi , Takashi Yoshino , Akihiko Honda
IPC分类号： G02F1/35 , C30B15/00 , C30B15/08 , G02B6/13 , G02F1/355 , G02F1/37 , G02F1/377
CPC分类号： G02F1/377 , C30B15/00 , C30B15/08 , C30B29/30 , G02B6/131
摘要： A second harmonic generation element including a single crystal substrate having a fundamental composition of K.sub.3 Li.sub.2-2x (Nb.sub.1-y Ta.sub.y).sub.5+5z O.sub.15-x+12.5z and an optical waveguide made of an epitaxial film with a fundamental composition of K.sub.3 Li.sub.2-2a (Nb.sub.1-b Ta.sub.b).sub.5+5c O.sub.15-a+12.5c and refractive index different from that of the single crystal substrate, wherein: -0.5.ltoreq.a, x.ltoreq.0.625 0.ltoreq.b, y.ltoreq.0.5 0.8.ltoreq.(5-2x)/(5+5z), (5-2a)/(5+5c).ltoreq.1.2.
摘要翻译：包括具有K3Li2-2x（Nb1-yTay）5 + 5z015-x + 12.5z的基本组成的单晶衬底的二次谐波发生元件和由基本组成为K3Li2-2a（Nb1）的外延膜制成的光波导 -bTab）5 + 5cO15-a + 12.5c和与单晶衬底的折射率不同的折射率，其中：-0.5≤a，x <0.6250

22. 发明授权

US4358416A Apparatus and process for cooling and solidifying molten material being electromagnetically cast 失效
标题翻译：用于冷却和固化熔融材料的电磁铸造的装置和方法
公开(公告)号：US4358416A
公开(公告)日：1982-11-09
申请号：US213126
申请日：1980-12-04
申请人： John C. Yarwood , Michael J. Pryor , Derek E. Tyler
发明人： John C. Yarwood , Michael J. Pryor , Derek E. Tyler
IPC分类号： B22D27/02 , B22D11/01 , B22D27/04 , C30B15/00 , C30B15/08 , C30B15/14
CPC分类号： C30B15/14 , B22D11/015 , C30B15/00 , C30B15/08 , C30B29/60 , Y10S117/91 , Y10T117/1044 , Y10T117/1068
摘要： An apparatus and process is provided for electromagnetically casting molten material into a desired shape. A containment zone is established. The containment zone has a first section for electromagnetically containing the molten material and a second section downstream and communicating with the first section for forming the molten material into the desired shape. The improvement comprises a heat extraction device for directing a cooling medium into the containment zone whereby the cooling medium passes the molten material in the second section to rapidly solidify the molten material prior to passing the molten material in the first section to lower the temperature in the contained molten material to minimize superheating. A second embodiment of the invention includes a secondary cooling device associated with the heat extraction device for directing a cooling medium against the solidified material. A further embodiment provides an auxiliary cooling manifold device which may or may not be used in conjunction with the heat extraction device and the secondary cooling device. The auxiliary cooling device directs a cooling medium through the containment zone between the molten material and the device for establishing a containment zone whereby the cooling medium is vented out of the upstream end of the containment zone.
摘要翻译：提供了一种用于将熔融材料电磁铸造成所需形状的装置和工艺。建立遏制区。容纳区具有用于电磁地容纳熔融材料的第一部分和下游的第二部分，并与第一部分连通，以将熔融材料形成为期望的形状。该改进包括用于将冷却介质引导到容纳区域中的热提取装置，由此冷却介质通过第二部分中的熔融材料，以在熔融材料通过第一部分之前快速凝固熔融材料，以降低第一部分中的温度包含熔融材料以最小化过热。本发明的第二个实施例包括与冷却装置相关联的用于引导冷却介质抵靠固化材料的二次冷却装置。另一实施例提供了辅助冷却歧管装置，其可以或可以不与散热装置和二次冷却装置结合使用。辅助冷却装置引导冷却介质穿过熔融材料和装置之间的容纳区，用于建立容纳区，由此冷却介质从容纳区的上游端排出。

23. 发明授权

US4216186A Means for growing ribbon crystals without subjecting the crystals to thermal shock-induced strains 失效
标题翻译：用于生长带状晶体而不使晶体受到热冲击诱导应变的方法
公开(公告)号：US4216186A
公开(公告)日：1980-08-05
申请号：US938579
申请日：1978-08-31
申请人： Robert A. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Frosch , Samuel Berkman , Kyong-Min Kim , Harold E. Temple
发明人： Robert A. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Frosch , Samuel Berkman , Kyong-Min Kim , Harold E. Temple
IPC分类号： C30B15/08 , C30B15/14 , C30B15/34 , B01J17/18
CPC分类号： C30B15/08 , C30B15/14 , C30B15/34 , Y10S117/90 , Y10S117/91 , Y10T117/1044 , Y10T117/1056 , Y10T117/1068
摘要： In combination with a susceptor particularly suited for use in growing a ribbon crystal employing edge-defined film-fed growth techniques and characterized by a susceptor including a die through which a melt is drawn for forming a crystal ribbon, a pair of jets for directing a stream of fluid coolant along a path extended to impinge on the susceptor in close proximity with the die in non-incident relation with the crystal being grown.
摘要翻译：与特别适合用于生长使用边缘限定薄膜喂养生长技术的带状晶体的感受器组合，并且其特征在于包括用于形成晶体带的熔体被熔化的模具的基座，用于引导流体冷却剂流沿着与被生长的晶体非入射关系而与模具紧密接近的路径延伸以抵接在基座上。

24. 发明授权

US4102767A Arc heater method for the production of single crystal silicon 失效
标题翻译：电弧加热器方法用于生产单晶硅
公开(公告)号：US4102767A
公开(公告)日：1978-07-25
申请号：US787635
申请日：1977-04-14
申请人： Robert Mazelsky , Maurice G. Fey , Francis J. Harvey
发明人： Robert Mazelsky , Maurice G. Fey , Francis J. Harvey
IPC分类号： C01B33/02 , C01B33/027 , C01B33/03 , C01B33/033 , C30B11/12 , C30B15/00 , C30B15/02 , C30B15/06 , C30B15/08 , C30B29/06 , H05B7/18 , B01K1/00 , C04B35/00 , H01L3/00
CPC分类号： C01B33/03 , C01B33/027 , C01B33/033 , C30B11/12 , C30B15/02 , C30B15/06 , C30B15/08 , H05B7/185 , Y10S117/904 , Y10S117/905 , Y10S117/91
摘要： A method for the production of single crystal silicon characterized by the steps of feeding into an arc heater a quantity of uncontaminated silicon halide to react with hydrogen or a metal reductant, such as sodium, to produce reaction products including liquid silicon and a gaseous salt of the reductant, depositing the liquid silicon on a downwardly inclined surface, and attaching a single seed crystal of silicon to the liquid silicon and withdrawing the single seed crystal from the liquid silicon so as to propagate a large single crystal.
摘要翻译：一种用于生产单晶硅的方法，其特征在于以下步骤：将一定数量的未被污染的卤化硅与氢或金属还原剂如钠反应，以产生包括液态硅和还原剂，将液态硅沉积在向下倾斜的表面上，并将单个晶种的硅结合到液态硅上，并从液态硅中取出单个晶种，以便传播大的单晶。

25. 发明授权

US3563810A Method for reducing the cross section of semiconductor rods by molten-zone stretching 失效
标题翻译：通过拉伸强度降低半导体横截面的方法
公开(公告)号：US3563810A
公开(公告)日：1971-02-16
申请号：US3563810D
申请日：1969-06-12
申请人： SIEMENS AG
发明人： KELLER WOLFGANG , KRAMER HERBERT
IPC分类号： C30B13/20 , C30B15/08 , B01J17/10
CPC分类号： C30B15/08 , C30B13/20 , Y10S117/91 , Y10T117/1032 , Y10T117/1072
摘要： METHOD OF FLOATING ZONE MELTING A VERTICALLY MOUNTED ROD AND SIMULTANEOUSLY STRETCHING THE MOLTEN ZONE FOR REDUCING THE ROD IN CROSS SECTION INCLUDES PLACING AROUND THE TOP OF A THIN CRYSTAL SEED AN INDUCTION HEATER COIL HAVING TURNS OF A DIAMETER LARGER THAN THE THICKNESS OF THE THIN CRYSTAL SEED, FORMING THE LOWER END OF A THICK ROD HAVING A DIAMETER GREATER THAN 25 MM. A GREATER THAN THE DIAMETER OF A PLURALITY OF INNER TURNS OF THE COIL BUT SMALLER THAN THE DIAMETER OF AT LEAST ONE OF THE OUTER TURNS OF THE COIL APPROXIMATELY INTO THE SHAPE OF THE MOLTEN ZONE TO BE PRODUCED BY THE COIL, CONTACTING THE LOWER END OF THE THICK ROD WITH THE TOP OF THE SEED AND HEATING THE JUNCTION THEREOF WTH THE COIL SO THAT THE TURNS OF THE COIL ARE POSITIONED VERTICALLY BENEATH THE THICK PORTION, AND THEREAFTER COMMENCING THE ZONE MELTING AND STRETCHING OPERATIONS.

26. 发明授权

US3477811A Method of crucible-free zone melting crystalline rods,especially of semiconductive material 失效
标题翻译：无腐蚀区域熔融晶体管的方法，特别是半导体材料
公开(公告)号：US3477811A
公开(公告)日：1969-11-11
申请号：US3477811D
申请日：1966-07-11
申请人： SIEMENS AG
发明人： KELLER WOLFGANG
IPC分类号： C30B13/28 , C30B13/30 , C30B13/32 , C30B15/08 , B01J17/10 , B01J17/20
CPC分类号： C30B13/30 , C30B13/28 , C30B13/32 , C30B15/08 , Y10S117/901 , Y10S117/91 , Y10S117/911 , Y10S117/912 , Y10S117/917 , Y10T117/1072

27. 发明授权

US2927008A Crystal growing apparatus 失效
公开(公告)号：US2927008A
公开(公告)日：1960-03-01
申请号：US61889956
申请日：1956-10-29
申请人： SHOCKLEY TRANSISTOR CORP
发明人： WILLIAM SHOCKLEY
IPC分类号： C30B15/02 , C30B15/08 , C30B15/14 , C30B15/22 , C30B29/64
CPC分类号： C30B15/08 , C30B15/02 , C30B15/14 , C30B15/22 , Y10S117/91 , Y10T117/1036 , Y10T117/1068

28. 发明申请

US20210340444A1 SINGLE CRYSTALLINE PHOSPHOR AND METHOD FOR PRODUCING CRYSTAL BODY 有权
公开(公告)号：US20210340444A1
公开(公告)日：2021-11-04
申请号：US17240370
申请日：2021-04-26
申请人： TDK CORPORATION
发明人： Tatsuya TERUI
IPC分类号： C09K11/77 , C30B15/08 , H01L33/50
摘要： Provided is a method for producing a crystal body that can obtain a crystal body having a relatively large size and a more uniform composition, and a novel single crystalline phosphor obtained by the above producing method. The single crystalline phosphor contains YAG or LuAG as a main component and at least one element of Ce, Pr, Sm, Eu, Tb, Dy, Tm, and Yb as an accessory component. In a cross section of the single crystalline phosphor, a uniform concentration region in which the accessory component is uniformly distributed is located in a central portion of the cross section, and an area ratio of the uniform concentration region to a cross-sectional area of the cross section is 35% or more.

29. 发明授权

US09388337B2 Metal fluoride crystal, light emitting element, scintillator, method of detecting neutron, and method of producing metal fluoride crystal 有权
标题翻译：金属氟化物结晶，发光元件，闪烁器，检测中子方法，和制备金属氟化物结晶的方法
公开(公告)号：US09388337B2
公开(公告)日：2016-07-12
申请号：US14396584
申请日：2013-04-18
申请人： Tohoku University , Tokuyama Corporation
发明人： Sumito Ishizu , Kentaro Fukuda , Noriaki Kawaguchi , Akira Yoshikawa , Takayuki Yanagida , Yui Yokota , Yutaka Fujimoto
IPC分类号： G01T3/00 , C09K11/77 , C30B29/12 , C30B15/08 , G21K4/00 , G01T3/06
CPC分类号： C09K11/7733 , C30B15/08 , C30B29/12 , G01T3/06 , G21K4/00
摘要： A light emitting element according to one embodiment of the present invention is configured of a metal fluoride crystal which is represented by chemical formula LiM1M2F6 (wherein Li includes 6Li; M1 represents at least one alkaline earth metal element selected from among Mg, Ca, Sr and Ba; and M2 represents at least one metal element selected from among Al, Ga and Sc), said metal fluoride crystal containing 0.02% by mole or more of Eu and having an Eu2+ concentration of less than 0.01% by mole.
摘要翻译：根据本发明的一个实施方式的发光元件被配置成其由化学式LiM1M2F6（表示的金属氟化物结晶的，其中L包括6Li; M1表示选自Mg，Ca，Sr和中选择的至少一种碱土金属元素巴;和M2表示选自Al，Ga和Sc）中的至少一种金属元素，所述含金属氟化物晶体0.02摩尔％以上的Eu和摩尔具有小于0.01％的Eu2 +的浓度。

30. 发明申请

US20150115168A1 Metal Fluoride Crystal, Light Emitting Element, Scintillator, Method of Detecting Neutron, and Method of Producing Metal Fluoride Crystal 有权
标题翻译：金属氟化物晶体，发光元件，闪烁体，检测中子的方法，以及生产金属氟化物晶体的方法
公开(公告)号：US20150115168A1
公开(公告)日：2015-04-30
申请号：US14396584
申请日：2013-04-18
申请人： Tohoku University , Tokuyama Corporation
发明人： Sumito Ishizu , Kentaro Fukuda , Noriaki Kawaguchi , Akira Yoshikawa , Takayuki Yanagida , Yui Yokota , Yutaka Fujimoto
IPC分类号： C09K11/77 , C30B15/08 , C30B29/12 , G01T3/06
CPC分类号： C09K11/7733 , C30B15/08 , C30B29/12 , G01T3/06 , G21K4/00
摘要： A light emitting element according to one embodiment of the present invention is configured of a metal fluoride crystal which is represented by chemical formula LiM1M2F6 (wherein Li includes 6Li; M1 represents at least one alkaline earth metal element selected from among Mg, Ca, Sr and Ba; and M2 represents at least one metal element selected from among Al, Ga and Sc), said metal fluoride crystal containing 0.02% by mole or more of Eu and having an Eu2+ concentration of less than 0.01% by mole.
摘要翻译：根据本发明的一个实施方案的发光元件由化学式LiM1M2F6（其中Li包括6Li; M1表示选自Mg，Ca，Sr和Mg中的至少一种碱土金属元素）表示的金属氟化物晶体构成， Ba，M2表示选自Al，Ga和Sc中的至少一种金属元素），所述金属氟化物结晶含有0.02摩尔％以上的Eu且Eu 2+浓度小于0.01摩尔％。

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